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    SEMICONDUCTOR DEVICE WITH LOW-CONDUCTING BURIED AND/OR SURFACE LAYERS
    51.
    发明申请
    SEMICONDUCTOR DEVICE WITH LOW-CONDUCTING BURIED AND/OR SURFACE LAYERS 审中-公开
    具有低导电性和/或表面层的半导体器件

    公开(公告)号：WO2013078267A1

    公开(公告)日：2013-05-30

    申请号：PCT/US2012/066192

    申请日：2012-11-21

    Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

    Inventor： SIMIN, Grigory ,  SHUR, Michael ,  GASKA, Remigijus

    IPC: H01L29/792 ,  H01L29/78 ,  H01L21/336

    CPC classification number: H01L29/78 ,  G06F17/5068 ,  H01L29/1075 ,  H01L29/1079 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/408 ,  H01L29/423 ,  H01L29/7786

    Abstract: A device including one or more low-conducting layers is provided. A low-conducting layer can be located below the channel and one or more attributes of the low-conducting layer can be configured based on a minimum target operating frequency of the device and a charge-discharge time of a trapped charge targeted for removal by the low-conducting layer or a maximum interfering frequency targeted for suppression using the low-conducting layer. For example, a product of the lateral resistance and a capacitance between the low-conducting layer and the channel can be configured to be larger than an inverse of the minimum target operating frequency and the product can be smaller than at least one of: the charge-discharge time or an inverse of the maximum interfering frequency.

    Abstract translation: 提供了包括一个或多个低导电层的器件。 低导电层可以位于通道下方，并且可以基于器件的最小目标工作频率和针对要被除去的俘获电荷的充电 - 放电时间来配置低导电层的一个或多个属性 低导电层或使用低导电层抑制的最大干扰频率。 例如，横向电阻和低导电层和沟道之间的电容的乘积可以被配置为大于最小目标工作频率的倒数，并且乘积可以小于以下中的至少一个：电荷 - 充电时间或最大干扰频率的倒数。

    PATTERNED LAYER DESIGN FOR GROUP III NITRIDE LAYER GROWTH
    52.
    发明申请
    PATTERNED LAYER DESIGN FOR GROUP III NITRIDE LAYER GROWTH 审中-公开
    第III组硝酸盐生长的图案层设计

    公开(公告)号：WO2013070369A2

    公开(公告)日：2013-05-16

    申请号：PCT/US2012/059468

    申请日：2012-10-10

    Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

    Inventor： JAIN, Rakesh ,  SUN, Wenhong ,  YANG, Jinwei ,  SHATALOV, Maxim, S. ,  DOBRINSKY, Alexander ,  SHUR, Michael ,  GASKA, Rimigijus

    CPC classification number: H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L29/1075 ,  H01L29/1079 ,  H01L29/7787 ,  H01L33/12 ,  H01L33/22

    Abstract: A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, and the resulting device having such a layer with a patterned surface, are provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-Ill nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.

    Abstract translation: 使用具有图案化表面的层的器件的制造方法，所述层具有用于改善半导体层的生长，例如具有高浓度铝的III族氮化物基半导体层，并且所得到的器件具有具有图案化表面的层， 被提供。 图案化表面可以包括基本上平坦的顶表面和多个减压区域，例如开口。 基本上平坦的顶表面可以具有小于约0.5纳米的均方根粗糙度，并且应力减小区域可以具有在约0.1微米至约5微米之间的特征尺寸和至少0.2微米的深度。 可以在第一层上生长一组III族氮化物材料，并且其厚度至少为应力减小区域的特征尺寸的两倍。

    ULTRAVIOLET DEVICE ENCAPSULANT
    54.
    发明申请
    ULTRAVIOLET DEVICE ENCAPSULANT 审中-公开

    公开(公告)号：WO2013044179A2

    公开(公告)日：2013-03-28

    申请号：PCT/US2012/056768

    申请日：2012-09-22

    Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

    Inventor： GASKA, Remigijus ,  SHATALOV, Maxim, S. ,  DOBRINSKY, Alexander ,  YANG, Jinwei ,  SHUR, Michael

    IPC: H01L33/48 ,  H01L33/52 ,  H01L33/50

    CPC classification number: C09D163/00 ,  C09K11/02 ,  C09K11/08 ,  H01L33/56 ,  Y10T428/23

    Abstract: A composite material, which can be used as an encapsulant for an ultraviolet device, is provided. The composite material includes a matrix material and at least one filler material incorporated in the matrix material that are both at least partially transparent to ultraviolet radiation of a target wavelength. The filler material includes microparticles and/or nanoparticles and can have a thermal coefficient of expansion significantly smaller than a thermal coefficient of expansion of the matrix material for relevant atmospheric conditions. The relevant atmospheric conditions can include a temperature and a pressure present during each of: a curing and a cool down process for fabrication of a device package including the composite material and normal operation of the ultraviolet device within the device package.

    Abstract translation: 提供了可用作紫外线装置的密封剂的复合材料。 复合材料包括基体材料和掺入基质材料中的至少部分对目标波长的紫外线辐射部分透明的填料。 填充材料包括微粒和/或纳米颗粒，并且可以具有明显小于相关大气条件下的基质材料的热膨胀系数的热膨胀系数。 相关的大气条件可以包括以下各项中存在的温度和压力：用于制造包括复合材料的器件封装的固化和冷却过程以及器件封装内的紫外线器件的正常操作。

    SEMICONDUCTOR DEVICE WITH LOW-CONDUCTING FIELD-CONTROLLING ELEMENT
    55.
    发明申请
    SEMICONDUCTOR DEVICE WITH LOW-CONDUCTING FIELD-CONTROLLING ELEMENT 审中-公开
    具有低导磁场控制元件的半导体器件

    公开(公告)号：WO2013036593A1

    公开(公告)日：2013-03-14

    申请号：PCT/US2012/053896

    申请日：2012-09-06

    Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  SIMIN, Grigory ,  SHUR, Michael ,  GASKA, Remigijus

    Inventor： SIMIN, Grigory ,  SHUR, Michael ,  GASKA, Remigijus

    IPC: H01L29/737 ,  H01L21/336

    CPC classification number: H01L29/7787 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/404 ,  H01L29/405

    Abstract: A semiconductor device including a low conducting field-controlling element is provided. The device can include a semiconductor including an active region (e.g., a channel), and a set of contacts to the active region. The field-controlling element can be coupled to one or more of the contacts in the set of contacts. The field-controlling element can be formed of a low conducting layer of material and have a lateral resistance that is both larger than an inverse of a minimal operating frequency of the device and smaller than an inverse of a maximum control frequency of the device,

    Abstract translation: 提供了包括低导电场控制元件的半导体器件。 该器件可以包括半导体，该半导体包括有源区（例如，沟道）和与该有源区的一组触点。 场控制元件可以耦合到该组触点中的一个或多个触点。 场控制元件可以由低导电材料层形成，并且具有大于装置的最小工作频率的倒数的横向电阻，并且小于装置的最大控制频率的倒数，

    SEMICONDUCTOR DEVICE AND CIRCUIT HAVING MULTIPLE VOLTAGE CONTROLLED CAPACITORS
    59.
    发明申请
    SEMICONDUCTOR DEVICE AND CIRCUIT HAVING MULTIPLE VOLTAGE CONTROLLED CAPACITORS 审中-公开
    具有多个电压控制电容器的半导体器件和电路

    公开(公告)号：WO2007062369A2

    公开(公告)日：2007-05-31

    申请号：PCT/US2006/061147

    申请日：2006-11-21

    Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  SIMIN, Grigory ,  SHUR, Michael ,  GASKA, Remigijus

    Inventor： SIMIN, Grigory ,  SHUR, Michael ,  GASKA, Remigijus

    IPC: H01L31/00

    CPC classification number: H01L29/93 ,  H01L27/0688 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/7787 ,  H01L29/94

    Abstract: An improved solution for performing switching, routing, power limiting, and/or the like in a circuit, such as a radio frequency (RF) circuit, is provided. A semiconductor device that includes at least two electrodes, each of which forms a capacitor, such as a voltage-controlled variable capacitor, with a semiconductor channel of the device is used to perform the desired functionality in the RF circuit. The device includes electrodes that can provide high power RF functionality without the use of ohmic contacts or requiring annealin .

    Abstract translation: 提供了一种用于在诸如射频（RF）电路的电路中执行切换，路由，功率限制等的改进的解决方案。 包括至少两个电极的半导体器件被用于在RF电路中执行期望的功能，每个电极形成电容器，例如具有该器件的半导体通道的电压控制的可变电容器。 该器件包括可以在不使用欧姆接触或需要退火的情况下提供高功率射频功能的电极。

    CONTROLLING ULTRAVIOLET INTENSITY OVER A SURFACE OF A LIGHT SENSITIVE OBJECT
    60.
    发明申请
    CONTROLLING ULTRAVIOLET INTENSITY OVER A SURFACE OF A LIGHT SENSITIVE OBJECT 审中-公开

    公开(公告)号：WO2018062885A8

    公开(公告)日：2018-04-05

    申请号：PCT/KR2017/010790

    申请日：2017-09-28

    Applicant: SEOUL VIOSYS CO., LTD. ,  SENSOR ELECTRONIC TECHNOLOGY, INC.

    Inventor： BARBER, Arthur Peter, III. ,  SHATALOV, Maxim S. ,  DOBRINSKY, Alexander ,  SHUR, Michael

    IPC: A01G7/04 ,  A01G7/06 ,  A01G1/00 ,  G06Q50/02

    Abstract: An approach for controlling ultraviolet intensity over a surface of a light sensitive object is described. Aspects involve using ultraviolet radiation with a wavelength range that includes ultraviolet-A and ultraviolet-B radiation to irradiate the surface. Light sensors measure light intensity at the surface, wherein each sensor measures light intensity in a wavelength range that corresponds to a wavelength range emitted from at least one of the sources. A controller controls the light intensity over the surface by adjusting the power of the sources as a function of the light intensity measurements. The controller uses the light intensity measurements to determine whether each source is illuminating the surface with an intensity that is within an acceptable variation with a predetermined intensity value targeted for the surface. The controller adjusts the power of the sources as a function of the variation to ensure an optimal distribution of light intensity over the surface.

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