公开(公告)号：US20240240314A1

公开(公告)日：2024-07-18

申请号：US18402079

申请日：2024-01-02

Applicant: Applied Materials, Inc.

Inventor： Zhen Liu ,  Min-Han Lee ,  Jie Zhang ,  Yongqian Gao ,  Tsung-Han Yang ,  Rongjun Wang

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/56

CPC classification number: C23C16/45525 ,  C23C16/06 ,  C23C16/56

Abstract: Embodiments of the disclosure relate to methods for metal gapfill of a logic device with lower resistivity. Specific embodiments provide integrated separate tungsten PVD processes with plasma-etch to solve the overhang issue caused by tungsten PVD and the high resistivity caused by nucleation.

公开(公告)号：US20240167148A1

公开(公告)日：2024-05-23

申请号：US17989767

申请日：2022-11-18

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han Yang ,  Shiyu Yue ,  Rongjun Wang

IPC: C23C16/02 ,  B08B7/00 ,  C23C16/06

CPC classification number: C23C16/0227 ,  B08B7/0035 ,  C23C16/06

Abstract: Embodiments of the disclosure are directed to methods of removing metal oxide from a substrate surface by exposing the substrate surface to an un-biased cleaning plasma comprising a mixture of hydrogen (H2) and oxygen (O2). In some embodiments, the substrate surface has at least one feature thereon, the at least one feature defining a trench having a top surface, a bottom surface, and two opposed sidewalls. The un-biased cleaning plasma comprises in a range of from 1% to 20% oxygen (O2) on a molecular basis and greater than or equal to 80% hydrogen (H2). The un-biased cleaning plasma removes substantially all of the metal oxide—such as molybdenum oxide (MoOx), ruthenium oxide (RuOx), or tungsten oxide (WOx)—from the substrate surface, and the top surface, the bottom surface, and the two opposed sidewalls of the trench without damaging the dielectric and/or critical dimension (CD)/profile of the structure.

公开(公告)号：US11489110B2

公开(公告)日：2022-11-01

申请号：US16845600

申请日：2020-04-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong Wang ,  Renu Whig ,  Jianxin Lei ,  Rongjun Wang

IPC: H01L43/12 ,  H01L43/10 ,  C23C14/08

Abstract: A method of forming a tunnel layer of a magnetoresistive random-access memory (MRAM) structure includes forming a first magnesium oxide (MgO) layer by sputtering an MgO target using radio frequency (RF) power, exposing the first MgO layer to oxygen for approximately 5 seconds to approximately 20 seconds at a flow rate of approximately 10 sccm to approximately 15 sccm, and forming a second MgO layer on the first MgO layer by sputtering the MgO target using RF power. The method may be performed after periodic maintenance of a process chamber to increase the tunnel magnetoresistance (TMR) of the tunnel layer.

公开(公告)号：US11245069B2

公开(公告)日：2022-02-08

申请号：US15199006

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： Lin Xue ,  Jaesoo Ahn ,  Mahendra Pakala ,  Chi Hong Ching ,  Rongjun Wang

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01F10/14 ,  H01F10/32

Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for spin-transfer-torque magnetoresistive random access memory (STT-MRAM) applications. In one embodiment, the method includes patterning a film stack having a tunneling barrier layer disposed between a magnetic reference layer and a magnetic storage layer disposed on a substrate to remove a portion of the film stack from the substrate until an upper surface of the substrate is exposed, forming a sidewall passivation layer on sidewalls of the patterned film stack and subsequently performing a thermal annealing process to the film stack.

公开(公告)号：US11227751B1

公开(公告)日：2022-01-18

申请号：US16918513

申请日：2020-07-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong Wang ,  Jianxin Lei ,  Rongjun Wang

IPC: H01J37/34 ,  C23C14/34

Abstract: Methods and apparatus for plasma chamber target for reducing defects in workpiece during dielectric sputtering are provided. For example, a dielectric sputter deposition target can comprise a dielectric compound having a predefined average grain size ranging from approximately 65 μm to 500 μm, wherein the dielectric compound is at least one of magnesium oxide or aluminum oxide.

公开(公告)号：US11037768B2

公开(公告)日：2021-06-15

申请号：US15448996

申请日：2017-03-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong Wang ,  Joung Joo Lee ,  Fuhong Zhang ,  Martin Lee Riker ,  Keith A. Miller ,  William Fruchterman ,  Rongjun Wang ,  Adolph Miller Allen ,  Shouyin Zhang ,  Xianmin Tang

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/54 ,  H01L21/768 ,  H01L21/285

Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.

公开(公告)号：US10957849B2

公开(公告)日：2021-03-23

申请号：US16358475

申请日：2019-03-19

Applicant: Applied Materials, Inc.

Inventor： Lin Xue ,  Chi Hong Ching ,  Rongjun Wang ,  Mahendra Pakala

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/08

Abstract: Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ a first pinning layer and a second pinning layer with a synthetic anti-ferrimagnetic layer disposed therebetween. The first pinning layer in contact with the seed layer can contain a single layer of platinum or palladium, alone or in combination with one or more bilayers of cobalt and platinum (Pt), nickel (Ni), or palladium (Pd), or combinations or alloys thereof, The first pinning layer and the second pinning layer can have a different composition or configuration such that the first pinning layer has a higher magnetic material content than the second pinning layer and/or is thicker than the second pinning layer. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.

公开(公告)号：US10704139B2

公开(公告)日：2020-07-07

申请号：US15482242

申请日：2017-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong Wang ,  Rongjun Wang ,  Hanbing Wu

IPC: C23C14/34 ,  C23C14/54 ,  C23C14/14 ,  C23C14/08 ,  C23C14/18 ,  H01J37/34 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods and apparatus for reducing defects in a workpiece are provided herein. In some embodiments, a sputter deposition target is provided for reducing defects in a workpiece, the target comprising a dielectric compound having a predefined average grain size ranging from approximately 20 μm to 200 μm. In other embodiments, a process chamber is provided, the process chamber comprising a chamber body defining an interior volume, a substrate support to support a substrate within the interior volume, a plurality of targets to be sputtered onto the substrate including at least one dielectric target, wherein the dielectric target comprises a dielectric compound having a predefined average grain size ranging from approximately 20 μm to 200 μm and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered.

公开(公告)号：US10431440B2

公开(公告)日：2019-10-01

申请号：US14975793

申请日：2015-12-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Rongjun Wang ,  Anantha K. Subramani ,  Chi Hong Ching ,  Xianmin Tang

IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32 ,  C23C14/08 ,  H01L21/02

Abstract: Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume; a substrate support to support a substrate within the interior volume; a plurality of cathodes coupled to the chamber body and having a corresponding plurality of targets to be sputtered onto the substrate; and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered and at least one pocket disposed in a backside of the shield to accommodate and cover at least another one of the plurality of targets not to be sputtered, wherein the shield is configured to rotate about and linearly move along a central axis of the process chamber.

公开(公告)号：US10096725B2

公开(公告)日：2018-10-09

申请号：US14531549

申请日：2014-11-03

Applicant: Applied Materials, Inc.

Inventor： Yong Cao ,  Daniel Lee Diehl ,  Rongjun Wang ,  Xianmin Tang ,  Tai-chou Papo Chen ,  Tingjun Xu

IPC: C23C14/35 ,  H01L31/0216 ,  H01L31/18 ,  G02B1/115 ,  C23C14/00 ,  C23C14/06

Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.