公开(公告)号：JP2009053683A

公开(公告)日：2009-03-12

申请号：JP2008189401

申请日：2008-07-23

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SANO MICHIAKI ,  HAYASE MICHIHIKO

IPC: G02F1/1368 ,  G03F1/54 ,  G03F1/58 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for inspecting a gray tone mask for quantitatively inspecting misalignment that can be produced in a manufacturing process of the gray tone mask that uses a light-semitransmissive film in a light-semitransmission portion. SOLUTION: The method is provided for inspecting a gray tone mask having a light-shielding portion, a light-transmission portion and a light-semitransmission portion manufactured, by patterning a film formed on a transparent substrate through pattering steps, including at least two drawing steps, and the method is characterized, in that a first resist pattern obtained in the first drawing step includes a first mask and a second resist pattern obtained in the second drawing step includes a second mark; the distance between the first mark in the first resist pattern or an edge of a film pattern, corresponding to the first mask and the second mark in the second resist pattern or an edge of a film pattern corresponding to the second mark, is measured to inspect whether the distance is within a predetermined range. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于检查灰度调色剂的方法，用于定量检查在半透射部分中使用光半透射膜的灰度调色剂的制造过程中可产生的未对准。 解决方案：该方法用于通过图案化通过图案化形成在透明基板上的膜来检查具有遮光部分，透光部分和光半透射部分的灰度调色剂掩模，该图案包括在 该方法的特征在于，在第一拉伸步骤中获得的第一抗蚀剂图案包括在第二拉伸步骤中获得的第一掩模和第二抗蚀剂图案，其包括第二标记; 测量第一抗蚀剂图案中的第一标记或对应于第一掩模和第二抗蚀剂图案中的第二标记的膜图案的边缘或对应于第二标记的膜图案的边缘之间的距离，以检查 该距离是否在预定范围内。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008282046A

公开(公告)日：2008-11-20

申请号：JP2008193231

申请日：2008-07-28

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： IMURA KAZUHISA ,  SANO MICHIAKI

IPC: G02F1/13 ,  G02F1/1368 ,  G03F1/54 ,  G03F1/70 ,  H01L21/00 ,  H01L21/027 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a gray tone mask of a halftone film type by which a high-quality TFT can be manufactured. SOLUTION: The gray tone mask for manufacturing a thin film transistor substrate has a pattern for a thin film transistor substrate, the pattern including a light-shielding part, a light transmitting part and a light semitransmitting part formed by patterning a light semitransmitting film and a light-shielding film formed on a transparent substrate. The pattern for a TFT substrate includes patterns corresponding to a source and a drain and comprising two light-shielding parts separated from each other and a pattern corresponding to a channel part adjoining to and interposed between the above two light-shielding parts and comprising a light semitransmitting part, and includes a portion where the two light-shielding parts and the semitransmitting part interposed therebetween are arranged in one direction; wherein in an adjoining portion between the channel part and the source and between the channel part and the drain, a light semitransmitting film with addition of a desired margin region is formed in a region corresponding to the channel part. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供可以制造高质量TFT的半色调膜类型的灰度调色剂掩模。 解决方案：用于制造薄膜晶体管基板的灰度调制掩模具有用于薄膜晶体管基板的图案，该图案包括遮光部分，透光部分和通过将半透射图案化而形成的光半透射部分 膜和形成在透明基板上的遮光膜。 TFT基板的图案包括对应于源极和漏极的图案，并且包括彼此分离的两个光屏蔽部件和对应于与上述两个遮光部分相邻并且插入在上述两个遮光部件之间的通道部分的图案，并且包括光 半透射部分，并且包括两个遮光部分和其间插入的半透射部分沿一个方向排列的部分; 其中在沟道部分和源极之间以及沟道部分和漏极之间的邻接部分中，在对应于沟道部分的区域中形成具有所需边缘区域的添加光的半透射膜。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008052120A

公开(公告)日：2008-03-06

申请号：JP2006229395

申请日：2006-08-25

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI MASARU ,  SANO MICHIAKI ,  USHIDA MASAO

IPC: C23C14/06 ,  G03F1/50 ,  G03F1/54 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a mask blank and a photomask suitable for a wet process in a large mask for an FPD (such as a resist stripping method, an etching method and a cleaning method). SOLUTION: The mask blank for manufacturing an FPD device has at least a semi-translucent film containing Mo and Si and having a function of controlling the transmitting quantity on a translucent substrate, wherein the semi-translucent film containing Mo and Si shows 5% or less of variation in the transmittance in a wavelength band covering at least from the i line to the g line emitted from an extra-high pressure mercury lamp, after the film is in contact with an alkali aqueous solution (e.g. potassium hydroxide (KOH)) for 15 minutes, the solution to be used in a step of manufacturing or using the mask blank and the mask. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了在FPD的大掩模（诸如抗蚀剂剥离法，蚀刻方法和清洁方法）中提供适用于湿法工艺的掩模毛坯和光掩模。 解决方案：用于制造FPD器件的掩模板至少具有含有Mo和Si的半透明膜，并具有控制透光性基板上的透射量的功能，其中包含Mo和Si的半透明膜显示 薄膜与碱性水溶液接触后，至少从i线至g线发射的波长带的透射率的变化为5％以下，例如氢氧化钾（ KOH））15分钟，该溶液用于制造或使用掩模板和掩模的步骤。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007248988A

公开(公告)日：2007-09-27

申请号：JP2006074595

申请日：2006-03-17

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SANO MICHIAKI

IPC: G03F1/00 ,  G03F1/70

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for a gray tone mask which does not have a pattern defect even when a drawing pattern shifts in position owing to misalignment. SOLUTION: The manufacturing method includes the stages of: forming a first resist pattern 24 on a light shield part and a light transmission part on a mask blank 20 having a light shield film 22 formed on a substrate 21, and etching the exposed light shield film using the resist pattern as a mask to expose the substrate in a translucent part region; removing the remaining first resist pattern and forming a translucent film 23 over the entire surface of the substrate to form a translucent part; and forming a second resist pattern 25 in regions corresponding to the light shield part region and the translucent part region and etching the exposed translucent film and light shield film using the resist pattern as a mask to form a light transmission part and a light shield part. At least, a portion or the whole of the first resist pattern formed on the light transmission part region adjacent to the translucent part region is formed a little smaller than a designed value to the side of the light transmission part. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供即使当由于未对准而导致图形位移偏移时也不具有图案缺陷的灰度调色掩模的制造方法。 解决方案：该制造方法包括以下步骤：在遮光部分上形成第一抗蚀剂图案24和在具有形成在基板21上的遮光膜22的掩模坯料20上的光透射部分， 使用抗蚀剂图案作为掩模的遮光膜，以使透光部分区域中的基板曝光; 去除剩余的第一抗蚀剂图案并在基板的整个表面上形成半透明膜23以形成半透明部分; 并且在对应于遮光部分区域和透光部分区域的区域中形成第二抗蚀剂图案25，并且使用抗蚀剂图案作为掩模蚀刻暴露的半透明膜和遮光膜以形成透光部分和遮光部分。 至少，形成在与透光部分区域相邻的透光部分区域上的第一抗蚀剂图案的一部分或全部形成为比光透射部分侧的设计值稍小。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007248802A

公开(公告)日：2007-09-27

申请号：JP2006072111

申请日：2006-03-16

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SANO MICHIAKI ,  MOTOMURA SHUHO

IPC: G03F1/32 ,  G03F1/68 ,  G03F1/76 ,  G03F1/80 ,  G03F9/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method in which a drawing pattern of a first time and a drawing pattern of a second time are disposed with high precision when overlay drawing is performed to form patterns on the same substrate by using a plurality of patterning stages using a photolithography method.
SOLUTION: The pattern forming method includes the stages of: preparing a substrate where a layer to be etched is formed for forming a first pattern and a second pattern including a first alignment mark; forming a resist film on the substrate, and then drawing a second alignment mark on the resist film after positioning using the first alignment mark; measuring position precision of overlay drawing by using the first pattern and the second alignment mark obtained by the drawing; and correcting a position shift found as a result of the measurement of the position precision of the overlay drawing in such a case then drawing the second pattern on the resist film.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种图案形成方法，其中当执行覆盖拉伸时，以高精度设置第一次的绘图图案和第二次绘图图案，以通过使用在同一基底上形成图案 使用光刻方法的多个图案化阶段。 解决方案：图案形成方法包括以下步骤：准备形成用于形成第一图案的待蚀刻层，以及包括第一对准标记的第二图案的基板; 在基板上形成抗蚀剂膜，然后在使用第一对准标记定位之后，在抗蚀剂膜上绘制第二对准标记; 通过使用第一图案和通过图形获得的第二对准标记测量覆盖图的位置精度; 并且在这种情况下校正作为测量叠加图的位置精度的结果的位置偏移，然后在抗蚀剂膜上绘制第二图案。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007233350A

公开(公告)日：2007-09-13

申请号：JP2007009828

申请日：2007-01-19

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SANO MICHIAKI

IPC: G03F1/72

Abstract: PROBLEM TO BE SOLVED: To provide a method for correcting defects of a gray-tone mask that can suitably correct defects occurring in a gray-tone part, and to provide a corrected gray-tone mask. SOLUTION: The method for correcting defects of a gray-tone mask to form a resist pattern having step-wise or continuously varying the film thickness on a transfer object, the mask having a light-shielding part 13, a light-transmitting part 14 and a gray-tone part 15 which reduces the transmission quantity of the exposure light used upon using the gray-tone mask 10, includes a step of identifying a region 21 to be corrected, where a deletion defect 20 occurs in the gray-tone part 15 which is formed from a semi-transmitting film; and a step of forming a light-shielding film 22 for correction in a fine pattern state which gives a gray-tone effect equivalent to the effect in a normal gray-tone part in the gray-tone part 15. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于校正灰度色调掩模的缺陷的方法，其可以适当地校正灰灰色部分中发生的缺陷，并提供校正的灰度色调掩模。 解决方案：用于校正灰色调掩模的缺陷以形成在转印体上逐步或连续地改变膜厚度的抗蚀剂图案的方法，该掩模具有遮光部13，透光性 第14部分和降低使用灰色调掩模10时所使用的曝光光的透射量的灰色部分15包括识别要被校正的区域21的步骤，其中在灰度调色板10中发生缺陷缺陷20。 由半透膜形成的色调部15; 以及形成用于以精细图案状态进行校正的遮光膜22的步骤，该微细图案状态给出与灰色调部分15中的正常灰色部分的效果相当的灰度效果。 C）2007，JPO＆INPIT

公开(公告)号：JP2006268035A

公开(公告)日：2006-10-05

申请号：JP2006049425

申请日：2006-02-25

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI MASARU ,  SANO MICHIAKI

IPC: G03F1/50 ,  G03F1/54 ,  G03F1/60 ,  G03F1/68 ,  G03F1/80

Abstract: PROBLEM TO BE SOLVED: To provide a halftone film type gray tone mask having an excellent pattern shape and cross-sectional shape, and a method for manufacturing it. SOLUTION: The method for manufacturing a gray tone mask having a pattern consisting of a light shielding part, a translucent part, and a semi-translucent part comprises: a process for forming a first resist pattern 23a on a light shielding film 22 formed on a transparent substrate 21; a process for forming a light shielding film pattern 22a by etching the light shielding film using the resist pattern as a mask; a process for forming a semi-translucent film 24 on the light shielding film pattern 22a, and forming a second resist pattern 23b on it, and a process for forming a semi-translucent film pattern 24a by etching the semi-translucent film using the resist pattern as a mask. The material of the semi-translucent film has an etching rate higher than the material of the light shielding film, to an etchant for etching the semi-translucent film. For example, the light shielding film is of the material of which principal component is Cr, and the semi-translucent film is of the material which contains Cr and N. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供具有优异的图案形状和截面形状的半色调薄膜型灰度调色剂及其制造方法。 解决方案：具有由遮光部分，半透明部分和半透明部分组成的图案的灰色调掩模的制造方法包括：在遮光膜22上形成第一抗蚀剂图案23a的工艺 形成在透明基板21上; 通过使用抗蚀剂图案作为掩模蚀刻遮光膜来形成遮光膜图案22a的工艺; 在遮光膜图案22a上形成半透明膜24并在其上形成第二抗蚀剂图案23b的工艺，以及通过使用抗蚀剂蚀刻半透明膜来形成半透明膜图案24a的工艺 模式作为面具。 半透明膜的材料具有比遮光膜的材料高的蚀刻速率，蚀刻到半透明膜的蚀刻剂。 例如，遮光膜是主要成分为Cr的材料，半透明膜是含有Cr和N的材料。版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006267262A

公开(公告)日：2006-10-05

申请号：JP2005082500

申请日：2005-03-22

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SANO MICHIAKI

IPC: G02F1/1368 ,  G03F1/54 ,  G03F1/68 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a gray tone mask provided with accurate marks related to a gate electrode, a contact hole and the like and formed so as to have an overlapping part of a device pattern formed by using the gray tone mask and a device pattern formed by using an another photo mask. SOLUTION: The gray tone mask has a mask pattern which corresponds to a first device pattern 30 and whose region on the gray tone mask 20 corresponding to the overlapping part of the first device pattern 30 and a second device pattern is a translucent part, and a mark pattern 31 formed simultaneously with formation of the translucent part of the mask pattern and related to the second device pattern. The mask pattern and the mark pattern 31 are used for manufacturing a substrate to be transferred having the first device pattern 30 formed by using the gray tone mask 20 and the second device pattern e.g. the contact hole H etc. formed by using an another photo mask so as to have the overlapping part with the first device pattern 30. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有与栅电极，接触孔等相关的准确标记的灰度调色掩模，并且形成为具有通过使用灰色调色掩模形成的器件图案的重叠部分 以及通过使用另一光掩模形成的器件图案。 解决方案：灰色调掩模具有对应于第一器件图案30的掩模图案，并且其灰度调色掩模20上的区域对应于第一器件图案30的重叠部分，第二器件图案是半透明部分 以及与形成掩模图案的半透明部分同时形成并与第二器件图案相关联的标记图案31。 掩模图案和标记图案31用于制造具有通过使用灰色调掩模20和第二器件图案形成的第一器件图案30的待转印衬底。 通过使用另一个光掩模形成的接触孔H等，以便与第一器件图案30具有重叠部分。版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2010152346A

公开(公告)日：2010-07-08

申请号：JP2009263833

申请日：2009-11-19

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SANO MICHIAKI ,  IMURA KAZUHISA

IPC: G02F1/1368 ,  G03F1/54 ,  G03F1/58

Abstract: PROBLEM TO BE SOLVED: To provide a multi-level photomask which obtains a desired residual resist film value on a transferred body without setting conditions, and obtains a uniform residual film value by almost equalizing exposure amounts even when line widths are different, and to provide a manufacturing method of the multi-level photomask.
SOLUTION: The multi-level photomask having a transfer pattern including a translucent part and at least two semi-translucent parts including a first semi-translucent part and a second semi-translucent part different in film configuration by forming a first semi-translucent film and a second semi-translucent film having predetermined different transmittances on a transparent substrate and applying predetermined patterning to each of the first and second semi-translucent films. Transmittance-wavelength dependence to wavelengths in a range of the i-th line to the g-th line of the first semi-translucent part is almost equal to the transmittance-wavelength dependence to wavelengths in a range of the i-th line to the g-th line of the second semi-translucent part.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种多级光掩模，其在没有设定条件的情况下在转印体上获得期望的残留抗蚀剂膜值，并且即使当线宽不同时也通过几乎均衡曝光量获得均匀的残留膜值， 并提供多级光掩模的制造方法。 解决方案：具有包括半透明部分和至少两个半透明部分的转印图案的多层光掩模，所述半透光部分包括通过形成第一半透明部分的第一半透明部分和不同于膜构造的第二半透明部分， 半透明膜和在透明基板上具有预定不同透光率的第二半透明膜，并且对第一和第二半透明膜中的每一个施加预定图案化。 对于第一半透半透光部分的第i行至第g行的范围的透射波长依赖性几乎等于对第i行至第i行的范围内的波长的透射率 - 波长的依赖性 第二半半透明部分的第g行。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010038930A

公开(公告)日：2010-02-18

申请号：JP2008197960

申请日：2008-07-31

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SANO MICHIAKI ,  MITSUI MASARU

IPC: G02F1/1368 ,  G03F1/50 ,  G03F1/58 ,  G03F1/68 ,  G03F1/80

Abstract: PROBLEM TO BE SOLVED: To provide a mask blank and a photomask, capable of avoiding the problems that may occur when a light-shielding film and a light semi-translucent film located close to each other are exposed to an etching liquid.
SOLUTION: Provided is a multi-level grayscale photomask, wherein a light semi-translucent film that partially transmits exposure light and a light-shielding film that blocks exposure light, are provided, in a random order, on a transparent substrate; and a light-transmitting part that transmits exposure light, a light semi-translucent part that partially transmits exposure light and a light-shielding part that blocks exposure light, are formed, by respectively patterning the light semi-translucent film and the light-shielding film through wet etching, wherein at least one of the light-shielding film and the light semi-translucent film is made of a non-conductive material, or a layer with a given thickness, including a surface where these films are in contact with each other, of at least one of the light-shielding film and the light semi-translucent film, is made of a non-conductive material.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种掩模坯料和光掩模，能够避免当彼此靠近的遮光膜和光半透明膜暴露于蚀刻液体时可能发生的问题。 解决方案：提供了一种多级灰度光掩模，其中，以随机顺序在透明基板上提供部分透射曝光光的光半透明膜和阻挡曝光光的遮光膜; 并且通过分别构图所述光半透明膜和所述遮光层来形成透射曝光光的透光部分，部分地曝光曝光的光半透明部分和阻挡曝光光的遮光部分 薄膜，其中所述遮光膜和所述光半透明膜中的至少一个由非导电材料制成，或者具有给定厚度的层，包括这些膜与每个膜接触的表面 遮光膜和光半透明膜中的至少一个的另一个由非导电材料制成。 版权所有（C）2010，JPO＆INPIT