公开(公告)号：CA783819A

公开(公告)日：1968-04-23

申请号：CA783819D

Applicant: IBM

Inventor： MARINACE JOHN C ,  RUTZ RICHARD F

公开(公告)号：DE1208819B

公开(公告)日：1966-01-13

申请号：DEJ0021977

申请日：1962-06-22

Applicant: IBM

Inventor： MARINACE JOHN C ,  RUTZ RICHARD F

IPC: H01L21/00 ,  H01L21/24 ,  H01L29/00 ,  H01L29/167 ,  H01L29/36 ,  H01L29/88

Abstract: 980,338. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. May 30, 1962 [June 23, 1961], No. 20755/62. Heading H1K. A semi-conductor tunnelling device comprises a PN junction wherein the doping level of one of the conductivity type determining impurities is very heavily degenerate, and wherein the doping level of the other conductivity type determining impurity is greater than degeneracy. As shown, Fig. 4, the Fermi level lies well within the valence band of the very heavily doped P-type material, the very heavy doping of which also makes the upper edge of this band diffuse. The usual turn-over portion A of the characteristic, Fig. 1, occurs when the applied voltage is such that the Fermi level coincides with the upper edge of the valence band, and if this edge is diffuse then the turnover is not sharp and has a plateau A-B giving a substantially constant current over a range of applied voltage. In the embodiments described the doping of the P-material is about 100 times that which would normally produce degeneracy and the doping of the n-material is about 5 times that which would produce dedegeneracy. In one embodiment a bulk region of germanium doped with 2-8 x 10 20 atoms of gallium/c.c., has alloyed thereto a tin dot doped with arsenic, the latter diffusing into the bulk germanium to produce doping to the extent of 2-3 x 10 19 atoms of arsenic/c.c. and a barrier layer of less than 150 Š width. In another embodiment a germanium body doped with 2-3 x 10 19 atoms of arsenic/c.c. has an aluminium or aluminium-boron dot alloyed thereto to produce doping of 2-8 x 10 20 atoms of aluminium/c.c.

公开(公告)号：CA707455A

公开(公告)日：1965-04-06

申请号：CA707455D

Applicant: IBM

Inventor： MARINACE JOHN C

公开(公告)号：DE1185292B

公开(公告)日：1965-01-14

申请号：DEJ0021602

申请日：1962-04-12

Applicant: IBM

Inventor： MARINACE JOHN C

IPC: H01L21/00 ,  H01L21/18 ,  H01L27/00 ,  H01L27/07 ,  H01L29/00

Abstract: 989,118. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. April 18, 1962 [April 20, 1961], No. 15036/62. Heading H1K. [Also in Division H3] A circuit element has a body with two or more adjoining semi-conductive portions, the two adjoining portions, or an adjoining two of the portions, being of different basic semiconductor material; the body also has a region of semi-conductive material which adjoins each of the portions of the body and forms a rectifying junction with at least one of them. The embodiment shown in Fig. 2 has an intrinsic portion 3 of GaAs (pn 5 x 10 6 ohm.cms.) on which an N+ Ge portion 2 is epitaxially deposited. A large area ohmic contact 5 is provided on the lower face of the composite body. To the upper surface of the body is alloyed a pellet 4 of a Ga/Sn alloy. The Ga converts the recrystallized Ge region 6 to P+ conductivity, thus producing a Ge tunnel diode supported by intrinsic GaAs (except for a small region 7 converted to N+ conductivity by Sn from the alloy). A portion 8 of the N+ Ge portion may be etched away, as shown, to reduce the junction area of the diode and obtain a correspondingly low capacitance. In the embodiment of Fig. 3 a composite body having successive portions 2, 4, 3 of P+ GaAs, intrinsic GaAs, and N + Ge has a broad area ohmic contact 8 provided on one face and on its opposite face has an epitaxially deposited layer 5 of N+ Ge to which an ohmic contact 9 is attached. The junction between portion 2 and layer 5 may be reduced by etching if desired. This construction provides an oscillator in which the equivalent circuit contains a capacitance and shunt negative resistance associated with the heterojunction tunnel diode formed by portion 2 and layer 5, positive resistance associated with portion 3, and inductance, which is mainly associated with layer 5. The embodiment of Fig. 4 (not shown) is similar to that of Fig. 3, but instead N+ Ge portion 3 it has a portion of P+ Ge. This produces a hetero-junction tunnel diode in parallel with a homo-junction tunnel diode, thus providing a device in which one diode is designed to act as a load on the other which operates as a class C oscillator at low power levels. Specification 886,393 is referred to.

公开(公告)号：DE1146982B

公开(公告)日：1963-04-11

申请号：DEJ0018210

申请日：1960-05-28

Applicant: IBM

Inventor： MARINACE JOHN C

IPC: C22B41/00 ,  C23C16/46 ,  C25F3/12 ,  C30B25/02 ,  H01L21/00 ,  H01L21/205 ,  H01L29/00

Abstract: A tunnel diode is formed by epitaxially depositing, in a closed container, a layer of semi-conductor of one conductivity type on a substrate of the opposite conductivity type by vapour deposition from a gaseous compound of the semi-conductor element and a transport element as in the parent Specification, the resulting junction being heat treated, either before, or during, the alloying of ohmic contacts thereto, to increase the ratio of peak to valley currents of the current voltage characteristic of the diode. In examples, germanium is deposited on germanium or gallium arsenide bodies which are then heat treated for 20 seconds-10 minutes at 665 DEG C.