公开(公告)号：US20160247763A1

公开(公告)日：2016-08-25

申请号：US15147411

申请日：2016-05-05

Applicant: Intel Corporation

Inventor： Chia-Pin Chiu ,  Kinya Ichikawa ,  Robert L. Sankman

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L25/18 ,  H01L23/31

CPC classification number: H01L23/5381 ,  H01L21/486 ,  H01L21/4867 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/49816 ,  H01L23/49894 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386 ,  H01L24/16 ,  H01L24/18 ,  H01L24/19 ,  H01L24/20 ,  H01L24/23 ,  H01L24/24 ,  H01L24/25 ,  H01L24/81 ,  H01L25/0655 ,  H01L25/18 ,  H01L2224/16225 ,  H01L2224/215 ,  H01L2224/24225 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/143 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15747 ,  H05K1/113 ,  H05K3/3436 ,  H05K3/4664 ,  H05K3/4694 ,  H05K2203/013 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Generally discussed herein are systems and apparatuses that include a dense interconnect bridge and techniques for making the same. According to an example a technique can include creating a multidie substrate, printing an interconnect bridge on the multidie substrate, electrically coupling a first die to a second die by coupling the first and second dies through the interconnect bridge.

Abstract translation: 这里通常讨论的是包括密集互连桥和其制造技术的系统和装置。 根据一个示例，一种技术可以包括创建多芯基板，在多芯基板上印刷互连桥，通过将第一和第二裸片耦合通过互连桥将第一裸片电耦合到第二裸片。

公开(公告)号：US20160204049A1

公开(公告)日：2016-07-14

申请号：US15046280

申请日：2016-02-17

Applicant: Intel Corporation

Inventor： Chia-Pin Chiu ,  Zhiguo Qian ,  Mathew J. Manusharow

IPC: H01L23/482 ,  H01L25/065 ,  H01L23/538

CPC classification number: H01L23/5385 ,  H01L21/02164 ,  H01L21/30604 ,  H01L21/486 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/4821 ,  H01L23/5381 ,  H01L23/5382 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1433 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2224/0401

Abstract: Embodiments of the present disclosure are directed towards techniques and configurations for a bridge interconnect assembly that can be embedded in a package assembly. In one embodiment, a package assembly includes a package substrate configured to route electrical signals between a first die and a second die and a bridge embedded in the package substrate and configured to route the electrical signals between the first die and the second die, the bridge including a bridge substrate, one or more through-hole vias (THVs) formed through the bridge substrate, and one or more traces disposed on a surface of the bridge substrate to route the electrical signals between the first die and the second die. Routing features including traces and a ground plane of the bridge interconnect assembly may be separated by an air gap. Other embodiments may be described and/or claimed.

公开(公告)号：US20160027757A1

公开(公告)日：2016-01-28

申请号：US14875247

申请日：2015-10-05

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Deepak Kulkarni ,  Chia-Pin Chiu ,  Tannaz Harirchian ,  John S. Guzek

IPC: H01L23/00 ,  H01L25/18 ,  H01L23/367

CPC classification number: H01L24/20 ,  H01L21/56 ,  H01L23/34 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/49822 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/16145 ,  H01L2224/211 ,  H01L2224/32245 ,  H01L2224/73203 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/00

Abstract: An example includes a die package including a microelectronic die having a lower die surface, an upper die surface parallel to the lower die surface, and a die side, the microelectronic die including an active region and an inactive region. The example optionally includes a heat spreader having a lower heat spreader surface, an upper heat spreader surface parallel to the lower heat spreader surface, and at least one heat spreader side, the heat spreader disposed on the upper surface of the microelectronic die in thermal communication with the inactive region of the die and electrically insulated from the active region. The example optionally includes an encapsulation material encapsulating the die side and the heat spreader side and lower heat spreader surface, the encapsulation material including a lower surface substantially parallel to the die lower surface and an upper surface substantially parallel to the die upper surface.

公开(公告)号：US09244487B2

公开(公告)日：2016-01-26

申请号：US14090493

申请日：2013-11-26

Applicant: Intel Corporation

Inventor： Russell S. Aoki ,  Anthony P. Valpiani ,  Barry T. Dale ,  Chia-Pin Chiu

IPC: H01R4/50 ,  G06F1/16 ,  H01R13/193 ,  H05K7/10

CPC classification number: G06F1/16 ,  H01R13/193 ,  H05K7/1007 ,  Y10T29/49826

Abstract: A land-grid array die package socket is configured for low- or zero insertion-force assembly with a land-grid array die package. For zero insertion-force assembly, a motion plate applies a force on a land-grid array contact that causes a contact tip to move into protective cover while the die package is inserted into the socket. After zero insertion-force assembly, the motion plate applies a force on the land-grid array contact that causes the contact tip to deflect in a positive-Z direction until a useful contact is made at the contact tip with a land-grid array pad.

Abstract translation: 地面阵列阵列封装插座被配置为具有地平线阵列管芯封装的低或零插入力组件。 对于零插入力组件，运动板在地面栅格阵列触点上施加力，当模具封装插入插座时，导致接触尖端移动到保护盖中。 在零插入力组件之后，运动板在地面栅格阵列接触件上施加力，其使得接触尖端以正Z方向偏转，直到在接地尖端处与平台栅格阵列垫片进行有用的接触 。

公开(公告)号：US20150340353A1

公开(公告)日：2015-11-26

申请号：US14818902

申请日：2015-08-05

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC: H01L25/00 ,  H01L25/065

CPC classification number: H01L23/5226 ,  H01L21/563 ,  H01L23/5385 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

Abstract translation: 本文通常描述用于局部高密度衬底布线的系统和方法的实施例。 在一个或多个实施例中，一种装置包括介质，第一和第二电路元件，互连元件和电介质层。 该介质可以包括其中的低密度路由。 互连元件可以嵌入在介质中，并且可以在其中包括多个导电构件，导电构件可以电耦合到第一电路元件和第二电路元件。 互连元件可以包括其中的高密度路由。 电介质层可以在互连裸片上方，电介质层包括通过其中的第一和第二电路元件。

公开(公告)号：US09190380B2

公开(公告)日：2015-11-17

申请号：US13707159

申请日：2012-12-06

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Chia-Pin Chiu

IPC: H01L21/00 ,  H01L23/00 ,  H01L23/538 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L24/25 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/2501 ,  H01L2224/2505 ,  H01L2224/2512 ,  H01L2224/255 ,  H01L2224/73209 ,  H01L2224/81005 ,  H01L2224/92133 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/141 ,  H01L2924/1431 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15747 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00

Abstract: Discussed generally herein are devices that include high density interconnects between dice and techniques for making and using those devices. In one or more embodiments a device can include a bumpless buildup layer (BBUL) substrate including a first die at least partially embedded in the BBUL substrate, the first die including a first plurality of high density interconnect pads. A second die can be at least partially embedded in the BBUL substrate, the second die including a second plurality of high density interconnect pads. A high density interconnect element can be embedded in the BBUL substrate, the high density interconnect element including a third plurality of high density interconnect pads electrically coupled to the first and second plurality of high density interconnect pads.

公开(公告)号：US20150194406A1

公开(公告)日：2015-07-09

申请号：US14663689

申请日：2015-03-20

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Chia-Pin Chiu

IPC: H01L23/00 ,  H01L25/16 ,  H01L23/31

CPC classification number: H01L24/25 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/2501 ,  H01L2224/2505 ,  H01L2224/2512 ,  H01L2224/255 ,  H01L2224/73209 ,  H01L2224/81005 ,  H01L2224/92133 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/141 ,  H01L2924/1431 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15747 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00

Abstract: Discussed generally herein are devices that include high density interconnects between dice and techniques for making and using those devices. In one or more embodiments a device can include a bumpless buildup layer (BBUL) substrate including a first die at least partially embedded in the BBUL substrate, the first die including a first plurality of high density interconnect pads. A second die can be at least partially embedded in the BBUL substrate, the second die including a second plurality of high density interconnect pads. A high density interconnect element can be embedded in the BBUL substrate, the high density interconnect element including a third plurality of high density interconnect pads electrically coupled to the first and second plurality of high density interconnect pads.

Abstract translation: 这里通常讨论的是包括骰子之间的高密度互连和用于制造和使用这些设备的技术的设备。 在一个或多个实施例中，器件可以包括无冲突构建层（BBUL）衬底，其包括至少部分地嵌入在BBUL衬底中的第一管芯，第一管芯包括第一多个高密度互连焊盘。 第二管芯可以至少部分地嵌入在BBUL衬底中，第二管芯包括第二多个高密度互连焊盘。 高密度互连元件可以嵌入在BBUL基板中，高密度互连元件包括电耦合到第一和第二多个高密度互连焊盘的第三多个高密度互连焊盘。

公开(公告)号：US08912670B2

公开(公告)日：2014-12-16

申请号：US13631205

申请日：2012-09-28

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Deepak Kulkarni ,  Chia-Pin Chiu ,  Tannaz Harirchian ,  John S. Guzek

IPC: H01L23/28 ,  H01L23/10

CPC classification number: H01L24/20 ,  H01L21/56 ,  H01L23/34 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/49822 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/16145 ,  H01L2224/211 ,  H01L2224/32245 ,  H01L2224/73203 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/00

Abstract: An example includes a die package including a microelectronic die having a lower die surface, an upper die surface parallel to the lower die surface, and a die side, the microelectronic die including an active region and an inactive region. The example optionally includes a heat spreader having a lower heat spreader surface, an upper heat spreader surface parallel to the lower heat spreader surface, and at least one heat spreader side, the heat spreader disposed on the upper surface of the microelectronic die in thermal communication with the inactive region of the die and electrically insulated from the active region. The example optionally includes an encapsulation material encapsulating the die side and the heat spreader side and lower heat spreader surface, the encapsulation material including a lower surface substantially parallel to the die lower surface and an upper surface substantially parallel to the die upper surface.

Abstract translation: 一个实例包括包括具有下模表面的微电子管芯，平行于下模表面的上模表面和管芯侧的管芯封装，该微电子管芯包括有源区和非活性区。 该实施例可选地包括具有较低散热器表面的散热器，平行于下部散热器表面的上部散热器表面和至少一个散热器侧，散热器布置在热电连接的微电子管芯的上表面上 具有裸片的非活性区域并与活性区电绝缘。 该实施例可选地包括封装模具侧和散热器侧和下部散热器表面的封装材料，该封装材料包括基本上平行于模具下表面的下表面和基本上平行于模具上表面的上表面。

公开(公告)号：US20250044537A1

公开(公告)日：2025-02-06

申请号：US18362033

申请日：2023-07-31

Applicant: Intel Corporation

Inventor： Chia-Pin Chiu ,  Kaveh Hosseini

IPC: G02B6/43 ,  G02B6/42

Abstract: A tunable edge-coupled interface for photonic integrated circuits (PICs). The architecture can be identified by (1) an edge interface for optical coupling that exhibits a gap between an oxide cladding layer and the silicon substrate of the PIC die, (2) a perforated beam region above the gap in the oxide layer, wherein waveguide beams in the beam region provide a respective optical path for waveguides of the PIC, (3) actuator beams flanking the waveguide beams, the actuator beams include a heating element and are operated to tune the edge interface by inducing deflection of the edge interface, and (4) an application-specific target pitch of waveguides on the edge interface.

公开(公告)号：US20250004206A1

公开(公告)日：2025-01-02

申请号：US18343175

申请日：2023-06-28

Applicant: Intel Corporation

Inventor： Chia-Pin Chiu ,  Tim T. Hoang ,  Kaveh Hosseini ,  Omkar G. Karhade

IPC: G02B6/30 ,  G02B6/42

Abstract: In one embodiment, an integrated circuit package includes a first (top) package substrate, a photonics integrated circuit (PIC) die coupled to the first package substrate, and a second package substrate coupled to a bottom side of the first package substrate. The package further includes a pedestal coupled to a top side of the second package substrate in an area of the second package substrate that extends beyond an edge of the first package substrate at which the PIC die is located.