公开(公告)号：US20050153471A1

公开(公告)日：2005-07-14

申请号：US10999338

申请日：2004-11-29

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota

IPC: C30B29/38 ,  C30B11/00 ,  C30B11/12 ,  C30B19/02 ,  C30B29/40 ,  H01L21/208 ,  H01L21/00

CPC classification number: C30B29/403 ,  C30B11/00 ,  C30B11/04 ,  C30B29/406

Abstract: There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.

Abstract translation: 提供了一种制造III族氮化物晶体的方法，其中使氮等离子体与含有III族元素和碱金属的熔体接触以生长III族氮化物晶体。 此外，还提供了一种III族氮化物晶体的制造方法，其中III族氮化物晶体在放置在含有III族元素和碱金属的熔体中的基板上生长，其中 熔体的表面和基板的表面设定为至多50mm。

公开(公告)号：US06599637B1

公开(公告)日：2003-07-29

申请号：US09830219

申请日：2001-04-24

Applicant: Ai Itoh ,  Michimasa Miyanaga ,  Masashi Yoshimura

Inventor： Ai Itoh ,  Michimasa Miyanaga ,  Masashi Yoshimura

IPC: B32B1504

CPC classification number: H01L21/4857 ,  C04B35/584 ,  C04B37/026 ,  C04B2237/125 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/407 ,  C04B2237/66 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/74 ,  C04B2237/76 ,  H01L23/49894 ,  H01L23/5383 ,  H01L2924/0002 ,  H05K1/0306 ,  H01L2924/00

Abstract: A Si3N4 composite substrate which manifests no generation of cracking on the substrate even by mechanical shock or thermal shock, and is excellent in heat radiation property and heat-cycle-resistance property is obtained by using a Si3N4 substrate as a ceramic substrate. A Si3N4 substrate having a thermal conductivity of 90 W/m·K or more and a three-point flexural strength of 700 MPa or more is used, and the thickness tm of a metal layer connected on one major surface of the substrate and the thickness tc of the Si3N4 substrate are controlled so as to satisfy the relation formula: 2 tm≦tc≦20 tm. When metal layers are connected to both major surfaces of the Si3N4 substrate, the thickness tc and the total thickness ttm of the metal layers on both major surfaces are controlled so as to satisfy the relation formula: ttm≦tc≦10 ttm.

Abstract translation: 通过使用Si 3 N 4基板作为陶瓷基板，可以获得表现出在机械冲击或热冲击下也不会在基板上产生裂纹的Si 3 N 4复合基板，并且具有优异的散热性和耐热循环性。 使用热导率为90W / mK以上，三点弯曲强度为700MPa以上的Si 3 N 4基板，连接在基板的一个主表面上的金属层的厚度tm和厚度tc 控制Si 3 N 4衬底以满足关系式：2tm <= tc <= 20tm。 当金属层连接到Si3N4基板的两个主表面时，控制两个主表面上的金属层的厚度tc和总厚度ttm，以满足关系式：ttm <= tc <= 10ttm。

公开(公告)号：US06551528B1

公开(公告)日：2003-04-22

申请号：US09647137

申请日：2000-11-14

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC: G02B520

CPC classification number: G02F1/3551 ,  G02F1/37 ,  H01S3/109 ,  H01S3/1095 ,  H01S3/1611

Abstract: As a wavelength conversion crystal whose double refraction index is controllable, a crystal represented by a formula (I), M1xM21−xCa4O(BL3)3, where each of M1 and M2 represents one or more types of different rare earth elements and 0

Abstract translation: 作为双重折射率可控的波长转换晶体，由式（I）表示的晶体M1xM21-xCa4O（BL3）3，其中M1和M2各自表示一种或多种不同的稀土元素，0

公开(公告)号：US06375443B1

公开(公告)日：2002-04-23

申请号：US09647254

申请日：2000-09-22

Applicant: Masashi Yoshimura

Inventor： Masashi Yoshimura

IPC: F04C1816

CPC classification number: F04C29/0007 ,  F04C18/16

Abstract: A feed pipe 26 for a sealing water is connected to a housing of the pump to communicate with an enclosed chamber which is defined between a position in which a helical seal line of screw rotors 17 isolates the enclosed chamber from a suction port 15 of the pump and another position in which the enclosed chamber begins to open to a discharge port 24. Alternatively, a feed pipe for the sealing water is connected to the suction port 15 of the vacuum pump, and the feed pipe 26 is provided with a valve V which opens when the suction pressure of the sealing water becomes lower than −380 mmHg.

Abstract translation: 用于密封水的进料管26连接到泵的壳体以与封闭室连通，所述封闭室限定在螺旋转子17的螺旋形密封线将密封室与泵的吸入口15隔离的位置 另一个位置，封闭室开始向排放口24打开。或者，用于密封水的供给管连接到真空泵的吸入口15，并且进料管26设置有阀V， 当密封水的吸入压力低于-380 mmHg时打开。

公开(公告)号：US06315535B1

公开(公告)日：2001-11-13

申请号：US09647251

申请日：2000-09-22

Applicant: Toshiyasu Hoshi ,  Masashi Yoshimura

Inventor： Toshiyasu Hoshi ,  Masashi Yoshimura

IPC: F04C1816

CPC classification number: F04C28/28 ,  F04C18/16 ,  F04C29/04

Abstract: A discharge side housing 3 has a third cooling water chamber 19 communicating with a first cooling water chamber 7 of a main housing 1 through a cooling water passage 26. The third cooling water chamber 19 is connected to a cooling water outlet pipe 27 which is connected to an inlet port 28a of a three-way valve 28. The three-way valve 28 has a switching port 28b which can communicate with a pipe line 29 connected to the first cooling water chamber 7. The three-way valve 28 has an outlet 28c connected to a pipe line 30 which communicates with a second cooling water chamber 22 of a suction side housing 2. The second cooling water chamber 22 is connected to a cooling water discharge line 31 provided with a flow control valve 32 allowing a back pressure for a cooling water flowing thereinto.

Abstract translation: 排出侧壳体3具有通过冷却水通道26与主壳体1的第一冷却水室7连通的第三冷却水室19.第三冷却水室19与连接的冷却水出口管27连接 到三通阀28的入口28a。三通阀28具有可与连接到第一冷却水室7的管路29连通的切换口28b。三通阀28具有出口 28c连接到与吸入侧壳体2的第二冷却水室22连通的管路30.第二冷却水室22连接到设置有流量控制阀32的冷却水排出管线31，流量控制阀32允许背压 流入其中的冷却水。

公开(公告)号：US5767026A

公开(公告)日：1998-06-16

申请号：US633797

申请日：1996-04-10

Applicant: Naoki Kondoh ,  Fumihiro Wakai ,  Yoshihiro Obata ,  Akira Yamakawa ,  Takao Nishioka ,  Masashi Yoshimura

Inventor： Naoki Kondoh ,  Fumihiro Wakai ,  Yoshihiro Obata ,  Akira Yamakawa ,  Takao Nishioka ,  Masashi Yoshimura

IPC: B28B1/00 ,  C04B35/584 ,  C04B35/593 ,  C04B35/597 ,  C04B35/599 ,  C04B35/626

CPC classification number: C04B35/593 ,  C04B35/597

Abstract: There are provided a process for forming a silicon nitride sintered body, encompassing a sialon sintered body, by making much of the superplasticity of the sintered body intact as a simple material without formation thereof into a composite material, and a formed sintered body produced by the foregoing process. A silicon nitride sintered body (encompassing a sialon sintered body) having a relative density of at least 95% and a linear density of 120 to 250 in terms of the number of grains per 50 .mu.m in length in a two-dimensional cross section of the sintered body is formed through plastic deformation thereof at a strain rate of at most 10.sup.-1 /sec under a tensile or compressive pressure at a temperature of 1,300 to 1,700.degree. C. The formed sintered body has a degree of orientation of 5 to 80% as examined according to a method specified by Saltykov, a linear density of 80 to 200, and excellent mechanical properties especially at ordinary temperatures.

Abstract translation: PCT No.PCT / JP95 / 02026 Sec。 371日期：1996年4月10日 102（e）日期1996年4月10日PCT提交1995年10月4日PCT公布。 公开号WO96 / 10546 日本特开1996年4月11日提供了一种形成氮化硅烧结体的方法，其包括塞隆烧结体，通过使烧结体的大部分超塑性作为简单材料而不被形成为复合材料而形成，并形成 通过上述方法制造的烧结体。 一种氮化硅烧结体（包括赛隆烧结体），其相对密度至少为95％，线密度为120-250，以二维截面为单位长度的每50微米的颗粒数 该烧结体通过在1300〜1700℃的拉伸或压缩压力下以至多10-1 /秒的应变速率的塑性变形形成。所形成的烧结体的取向度为5〜80 ％，根据Saltykov规定的方法，线密度为80〜200，特别是在常温下，具有优异的机械性能。

公开(公告)号：US5459111A

公开(公告)日：1995-10-17

申请号：US159804

申请日：1993-11-30

Applicant: Masashi Yoshimura ,  Koichi Niihara

Inventor： Masashi Yoshimura ,  Koichi Niihara

IPC: C04B35/505 ,  C04B35/645

CPC classification number: C04B35/645 ,  C04B35/505

Abstract: The strength of a composite sintered body including yttrium oxide is improved. A composite ceramics sintered body includes a matrix of yttrium oxide and silicon carbide particles dispersed within the matrix. A compound oxide phase including yttrium and silicon is present at the surface of the sintered body. A sintered body is obtained by compression-molding mixed powder including yttrium oxide powder and silicon carbide powder in an inert gas atmosphere of at least 1550.degree. C. The sintered body is subjected to a heat treatment for at least 0.5 hour and not more than 12 hours in an atmosphere including oxygen gas in the range of at least 900.degree. C. and less than 1200.degree. C.

Abstract translation: 提高了包含氧化钇的复合烧结体的强度。 复合陶瓷烧结体包括分散在基质内的氧化钇和碳化硅颗粒的基体。 在烧结体的表面存在包含钇和硅的复合氧化物相。 通过在至少1550℃的惰性气体气氛中将含有氧化钇粉末和碳化硅粉末的混合粉末压缩成型而获得烧结体。烧结体经受至少0.5小时且不超过12的热处理 在包括氧气在900℃以上且小于1200℃的气氛中的小时。

公开(公告)号：US07959729B2

公开(公告)日：2011-06-14

申请号：US10549494

申请日：2004-03-15

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Hidekazu Umeda

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Hidekazu Umeda

IPC: C30B9/12

CPC classification number: C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

Abstract: A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and feeding nitrogen-containing gas into the reaction vessel and thereby allowing the Group III element and nitrogen to react with each other in the flux to grow Group-III-element nitride single crystals, wherein the single crystals are grown, with the flux being stirred by rocking the reaction vessel, for instance.

Abstract translation: 提供了一种制备方法，其中可以以高产率生产具有较低位错密度和均匀厚度并且是透明，高质量，大体积晶体的III族元素氮化物单晶。 制备III族元素的氮化物单晶的方法包括：加热含有选自碱金属和碱土金属中的至少一种金属元素的反应容器和选自碱金属和碱土金属的至少一种III族元素 由镓（Ga），铝（Al）和铟（In）组成，以制备金属元素的焊剂; 并将含氮气体进料到反应容器中，从而允许III族元素和氮气在助熔剂中彼此反应，生长组分III族元素氮化物单晶，其中单晶生长，助熔剂被搅拌 通过摇动反应容器。

公开(公告)号：US07905958B2

公开(公告)日：2011-03-15

申请号：US11579645

申请日：2005-03-30

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

IPC: C30B21/02

CPC classification number: C30B9/12 ,  C30B11/00 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L33/0075 ,  H01S5/32341

Abstract: A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.

Abstract translation: 一种制造III族氮化物半导体晶体的方法包括以下步骤：在反应器中容纳至少含有III族金属元素和碱金属元素的合金，将含氮物质引入反应器中，将含氮物质 提供合金熔融的合金中的物质，以及生长III族氮化物半导体晶体。 因此可以提供获得小吸收系数的III族氮化物半导体晶体及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

公开(公告)号：US20100247812A1

公开(公告)日：2010-09-30

申请号：US12744039

申请日：2008-11-21

Applicant: Masashi Yoshimura ,  Takenori Yoshikane ,  Akihito Fujii ,  Shigeru Nakayama

Inventor： Masashi Yoshimura ,  Takenori Yoshikane ,  Akihito Fujii ,  Shigeru Nakayama

IPC: C09K19/00 ,  B28B3/00

CPC classification number: G03B21/10 ,  C04B35/443 ,  C04B2235/9661 ,  H04N9/3105 ,  Y10T428/1095

Abstract: There is provided a transparent polycrystalline spinel substrate characterized in having a transmittance of 0.005% or less in a crossed Nicol system at a thickness of 1 mm and a wavelength of 450 nm, which does not generate image blurring or light-dark change when used in optical products. There is also provided a method for producing the transparent polycrystalline spinel substrate comprising a step for preparing a spinel powder, a step for molding the spinel powder and producing a spinel formed body, a step for sintering the spinel formed body and producing a spinel sintered body, and a step for subjecting the spinel sintered body to hot isostatic pressing (HIP) and producing a spinel polycrystalline body. There is further provided a liquid crystal projector and a receiver for rear-projection television having the aforementioned transparent polycrystalline spinel substrate.

Abstract translation: 提供了一种透明多晶尖晶石基材，其特征在于在1mm厚度和450nm波长的正交尼科耳系统中透光率为0.005％以下，当使用时不产生图像模糊或明暗变化 光学产品。 还提供了一种制造透明多晶尖晶石基材的方法，包括制备尖晶石粉末的步骤，尖晶石粉末成型步骤和尖晶石成形体的制造步骤，用于烧结尖晶石成形体并制备尖晶石烧结体 以及对尖晶石烧结体进行热等静压（HIP）并制造尖晶石多晶体的工序。 此外，还提供了具有上述透明多晶尖晶石基板的背投电视的液晶投影仪和接收机。