Abstract:
PROBLEM TO BE SOLVED: To reduce luminance differences among images of small areas allocated to an imaging object while an imaging time period is reduced. SOLUTION: In an image acquisition apparatus, the exposure of a CMOS image sensor 14 is started before a certain amount of light is emitted from a white LED 13A with respect to a small area AR allocated to a sample region PR. After the certain amount of light has been emitted from the white LED 13A, the exposure of the CMOS image sensor 14 is terminated to capture a divided image. Thereby, the light exposure of the CMOS image sensor 14 can be kept constant without waiting a time that the white LED 13A is brought into a thermal equilibrium state. Accordingly, luminance differences among the divided images can be reduced while an imaging time period is reduced. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an image sensor and an imaging device which can ease the alignment accuracy of an imaging element and a microlens array. SOLUTION: The imaging device 1 is provided, between an imaging lens 11 and an imaging element 13 which acquires image data with a microlens array 12 where one microlens is assigned to a plurality of pixels of the imaging element. The microlens array 12 is provided with a plurality of microlenses 121 at one side of a substrate 120, and a color filter 122 of three prime colors classified by a color in units of the microlens 121 is formed along the surface shape of the microlens 121. Even if displacement occurs between the microlens array 12 and the imaging element 13 during mounting, color mixture hardly occurs. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an optical waveguide-type RF optical converter which is compact and can be manufactured at a low cost, and to provide an optical modulation element. SOLUTION: The optical waveguide-type RF optical converter 1 includes a ring resonator 10 and a ferroelectric layer 13. The ring resonator 10 includes a ring-like optical waveguide 11 provided so as to be optically coupled to the optical waveguide. The ferroelectric layer 13 is provided so as to form a portion of the clad of the ring-like optical waveguide 11. When an electric field is applied from the outside to the ferroelectric layer 13, as the refractive index of the ferroelectric layer 13 is changed corresponding to the strength of the electric field, the effective refractive index of the ring-like optical waveguide 11 is changed as well. Since the filter characteristics of the ring resonator 10 are shifted to the short wavelength side or the long wavelength side by the change of the effective refractive index, the intensity of light is changed when the wavelength of light propagated through the optical waveguide-type RT optical converter 1 is in the shift range of the filter characteristics. In such a manner, RF signals are converted to light intensity signals. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To facilitate partial switching between a two-dimensional display and a three-dimensional display. SOLUTION: The image display device includes: a two-dimensional display device 10 having a plurality of pixels 11, for displaying an image based on two-dimensional image data or three-dimensional image data; and a three-dimensional display optical device 20 disposed facing the two-dimensional display device 10. The three-dimensional display optical device 20 is configured to, in the two-dimensional display area, transmit light beams propagating from the pixels 11 of the two-dimensional display device 10 without deflection. The three-dimensional display optical device 20 is configured to, in the three-dimensional display area, change the transmission state of the light beams so as to deflect the light beams propagating from the pixels 11 into a plurality of viewing angle directions required for the three-dimensional display. The two-dimensional display device 10 is configured to display the image in the two-dimensional display area based on the two-dimensional display data, and display the image in the three-dimensional display area based on the three-dimensional image data. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To improve connection of a semiconductor chip and an optical fibre, and make it possible to convert an electrical signal to light at high speed between the semiconductor chip and the optical fibre just under the semiconductor chip, and to convert input light to the electrical signal. SOLUTION: The device prepares: a semiconductor chip 10 which includes a transmission unit and a receiving unit for wireless communication connected to antenna elements 12, 13; and a wireless optical chip substrate 20 which includes a transmission unit and a receiving unit for wireless communication connected to antenna elements 22, 27, includes optical elements for optical communication connected to the transmission unit and the receiving unit for optical communication, and mounts the semiconductor chip 10. The device is composed so that the semiconductor chip 10 is mounted on the wireless optical chip substrate 20 so that the antenna elements 12, 13 of the semiconductor chip 10 and the antenna elements 22, 27 on an RF-OPT chip 21 face each other. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method for avoiding the appearance of an unintended stepped shape on the surface of a substrate by preventing unintended sputtering upon implanting ions. SOLUTION: At first, a first silicon oxide film is formed on the surface of the semiconductor substrate where a semiconductor layer is laminated. Next, patterning is applied to the first silicon oxide film to form a predetermined-shape mask 21. Then, a protection film with a second silicon oxide film 22 thinner than the first silicon oxide film is formed on the whole surface of the semiconductor substrate. In the state that the protection film is formed, oxygen ions are implanted from the surface of the semiconductor substrate into the semiconductor layer, and then heat treatment is applied to form an insulating film in the semiconductor layer with a buried oxide film layer. The fact that the protection film with the second silicon oxide film 22 thinner than the first silicon oxide film is formed after the mask 21 is formed prevents unintended sputtering in an ion implantation process. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a technology whereby each unit can simply be configured at a low cost without the need for provision of a light emitting element. SOLUTION: A first optical waveguide path 150 interconnects units 110 to 140. The optical waveguide path 150 guides light with four wavelengths without using data information, that is, null (invalid) data supplied from a light emitting section 170. A second optical waveguide path 160 interconnects the units 110 to 140. The optical waveguide path 160 is a ring-shaped optical waveguide path for guiding light with four wavelengths including data information. Modulation function sections 112 to 142 respectively guide light with a wavelength in response to the other unit to the optical wavelength path 160 from the optical waveguide path 150 in a state of modulating the light by transmission data when transmitting data to the other units. Light receiving function sections 113 to 143 extract the light with the wavelength in response to its own unit from the optical waveguide path 160 to obtain received data respectively. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an optical coupler with which excellent optical coupling between an optical waveguide having a minute cross-sectional area and an external optical component is achieved, an optical waveguide coupling method excellent in optical coupling efficiency and an optical waveguide device. SOLUTION: The optical coupler comprises at least a pair of electrode structure portions 12, 22 and a refractive index modulating portion 20 such as a liquid crystal, whose refractive index distribution is varied according to a voltage gradient caused by voltage application to the electrode structure portions 12, 22, and a phase of incident light is varied in the refractive index modulating portion 20 to optically couple the varied phase light to an external optical portion. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To give, by using a liquid crystal device provided in an optical path, a desired phase distribution to transmitted light without performing complicated calculations. SOLUTION: A liquid crystal layer 120 sealed between glass substrates 100 and 110 has a fixed thickness distribution determined by the ruggedness of a sub-substrate 111 provided on the inner side of the glass substrate 110. Electrodes 130 and 140 disposed on both sides of the liquid crystal layer 120 have planar shapes and are disposed in parallel to each other. The interval between the two electrodes 130 and 140 is always uniform and consequently the distribution of an electric field applied to the liquid crystal layer 120 is uniform. Thus, the shape of the phase distribution the light transmitted through a liquid crystal possesses is determined only by thickness distribution of the liquid crystal, and the magnitude thereof is determined by the voltage value applied between the electrodes. Consequently, the phase distribution of transmission light can be easily and accurately calculated using the thickness distribution of the liquid crystal by making the distribution of the electric field applied to the liquid crystal layer uniform. COPYRIGHT: (C)2004,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an image acquisition apparatus, an image acquisition method, and an image acquisition program capable of reducing a burden on a user by automatically excluding an influence of dust on a glass slide so as to generate a reference image to be used for shading correction.SOLUTION: An image acquisition apparatus comprises: an image acquisition unit which acquires plural images by causing an imaging device to image plural different areas of a measurement glass slide; and a reference image generation unit which determines as a reference luminance value, corresponding to each pixel of the imaging device, a luminance value representing intermediate luminance values obtained by removing, from plural luminance values corresponding to the pixel in the acquired images, higher-order luminance values including a maximum value and lower-order luminance values including a minimum value, and generates the reference image for shading correction from the reference luminance values relating to the respective pixels of the imaging device.