公开(公告)号：JP2005165248A

公开(公告)日：2005-06-23

申请号：JP2004007624

申请日：2004-01-15

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN

IPC: G02B5/00 ,  G02B3/00 ,  G03F1/68 ,  G03F1/70 ,  G03F1/08

CPC classification number: G03F7/70466 ,  G03F1/50 ,  G03F1/70

Abstract: PROBLEM TO BE SOLVED: To provide an exposure mask for forming a three-dimensional figure by exposure, the mask having a simple structure and giving a sufficient number of gray scales. SOLUTION: In the exposure mask M to be used for an exposure apparatus S, a plurality of pattern blocks comprising a pair of a light blocking pattern to block light emitting from the exposure apparatus S and a transmissive pattern to transmit the light are continuously arranged in such a manner that the pitch of the continuous pattern blocks is constant while a ratio of the light blocking pattern to the transmissive pattern is gradually varied. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供通过曝光形成三维图形的曝光掩模，该掩模具有简单的结构并给出足够数量的灰度。 解决方案：在用于曝光装置S的曝光掩模M中，包括一对遮光图案以阻挡从曝光装置S发射的光的多个图形块和用于透射光的透射图案 以连续图案块的间距恒定的方式连续排列，同时遮光图案与透射图案的比率逐渐变化。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004246223A

公开(公告)日：2004-09-02

申请号：JP2003037699

申请日：2003-02-17

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN

IPC: G03C5/00 ,  G03F1/36 ,  G03F1/68 ,  G03F9/00 ,  G06K9/00 ,  H01L21/027 ,  G03F1/08

CPC classification number: G03F1/36 ,  G03F1/44 ,  G03F1/68

Abstract: PROBLEM TO BE SOLVED: To provide a method of optical proximity effect correction of a photomask to decrease the difference between a test mask and a correction mask relating to the pattern density dependent error of line width.
SOLUTION: The method of correcting a mask includes: a process S1 of making a test mask; processes S2, S3 of measuring the transfer pattern from the test mask; a process S4 of deriving a function model (process model) which produces the same length as measured length when the transfer pattern is simulated by using the function model; a process S5 of deriving a mask pattern which produces a transfer pattern coincident with the designed pattern by using a process model so as to produce the mask data; and a process S6 of manufacturing a correction mask based on the mask data. Further, the method of correcting a mask includes a process S7 of setting the exposure conditions to obtain the conditions to make the OPE (optical proximity effect) characteristics flat with respect to the width of the pitch by controlling at least either the numerical aperture (NA) of the exposure apparatus or the illumination condition (σ) in the process of transferring the corrected mask.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004157160A

公开(公告)日：2004-06-03

申请号：JP2002319936

申请日：2002-11-01

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN ,  NIIKURA CHIE

IPC: G03F1/20 ,  G03F1/36 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a process model to eliminate errors caused by variance in the mask manufacturing process, to provide a method for designing a mask pattern including the above method, and to provide a mask and a method for manufacturing a semiconductor device. SOLUTION: The method for forming a process model includes processes of forming a designed test pattern on a test mask, reproducing the test pattern based on the measurement of the test pattern on the test mask, and fitting the designed data of the reproduced test pattern and the measurement result of the pattern transferred in the process of exposing the test mask. The method for designing a mask pattern includes a process of correcting the pattern by using the above method. The mask has a mask pattern designed by the above method. The method for manufacturing a semiconductor device includes a lithographic process using the above mask. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003337402A

公开(公告)日：2003-11-28

申请号：JP2002145874

申请日：2002-05-21

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN ,  NIIKURA CHIE

IPC: G03F1/36 ,  G03F1/68 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To ideally correct a master pattern in a mask for exposure by quantitatively grasping the fitting strain of a process model and generating the process model for simulation fitted with high accuracy. SOLUTION: In obtaining the process model for continuous simulation from discrete observed values, a plurality of types of process models are first obtained by making weighting for the discrete observed values different, the fitting strain affected by the weighting is subsequently digitized about the plurality of type of process models, and any process model is selected with the results of the digitization as an index. The selected process model is used to perform optical proximity effect correction for the mask pattern for exposure. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：通过定量地掌握过程模型的拟合应变并生成具有高精度的仿真过程模型，理想地校正掩模掩模中的主模式。 解决方案：在从离散观测值获得连续模拟的过程模型中，首先通过对离散观测值进行加权来获得多种类型的过程模型，然后将受加权影响的拟合应变随后数字化为 多种类型的过程模型，并且以数字化的结果作为索引来选择任何过程模型。 所选择的处理模型用于对用于曝光的掩模图案执行光学邻近效应校正。 版权所有（C）2004，JPO