公开(公告)号：JPH07326586A

公开(公告)日：1995-12-12

申请号：JP14123794

申请日：1994-05-31

Applicant: SONY CORP

Inventor： IMANISHI DAISUKE ,  TODA ATSUSHI

IPC: H01L21/205 ,  H01L21/365

Abstract: PURPOSE:To provide a growth method for a p-type II-VI compound semiconductor whose p-type controllability is good and doping concentration, that is, acceptor concentration of sodium, etc., as acceptor impurities is enough high by using p-type dopant consisting of sodium dipivaloylmethanate, etc. CONSTITUTION:Since sodium dipivaloylmethanate, potassium di- pivaloylmethanate or lithium dipivaloylmethanate used as p-type dopant can acquire enough high vapor pressure by sublimation even at a temperature

公开(公告)号：JPH07326585A

公开(公告)日：1995-12-12

申请号：JP14123694

申请日：1994-05-31

Applicant: SONY CORP

Inventor： TODA ATSUSHI ,  IMANISHI DAISUKE

IPC: H01L21/205 ,  C30B23/02 ,  C30B25/02 ,  H01L21/365

Abstract: PURPOSE:To provide a growth method for a p-type II-IV compound semiconductor whose acceptor concentration is enough high. CONSTITUTION:When a p-type II-VI compound semiconductor such as p-type ZnSe is formed by a metal organic chemical vapor deposition or a molecular beam epitaxy using raw gas material, organic compound such as diisopropyl amine wherein at least one nitrogen atom is contained and at least two groups whose molar weight is at least 12, properly larger than 36 are bonded to the nitrogen atom is used as p-type dopant.

公开(公告)号：JPH07302764A

公开(公告)日：1995-11-14

申请号：JP11446594

申请日：1994-04-28

Applicant: SONY CORP

Inventor： IMANISHI DAISUKE ,  TODA ATSUSHI

IPC: H01L29/225 ,  H01L21/205

Abstract: PURPOSE:To grow p or n type II-VI group compound semiconductor in sufficiently high acceptor or donor concentration. CONSTITUTION:A p type ZnSe layer can be grown by alternately repeating the following two steps i.e., the first step of simultaneously feeding Zn material as II group element, Se material as VI group material and N dopant as an acceptor impurities to a reaction tube of an MOCVD device alltogether to form ZnSe:N layer 24 and the second step of forming the Zn and N adsorbed layer 23 when the feeding of Se material is stopped while the feeding of Zn material and N dopant is being kept on.

公开(公告)号：JPH0661583A

公开(公告)日：1994-03-04

申请号：JP23406392

申请日：1992-08-11

Applicant: SONY CORP

Inventor： TODA ATSUSHI

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/10 ,  H01S5/40 ,  H01S3/18

Abstract: PURPOSE:To provide a semiconductor laser which has reduced astigmatism or is free from astigmatism, a semiconductor laser which can condense projected laser light outside the semiconductor laser or a semiconductor laser which can emits laser light without directivity. CONSTITUTION:The device is provided with a first resonator edge face 14 consisting of a projection surface and a second resonator edge face 16 consisting of a recessed surface or a plane provided to both ends of an active layer 10. In the device, a length of the first resonator edge face parallel to the active layer is made longer than that of the second resonator edge face parallel to the active layer.

公开(公告)号：JP2014203854A

公开(公告)日：2014-10-27

申请号：JP2013076282

申请日：2013-04-01

Applicant: ソニー株式会社 ,  Sony Corp

Inventor： TODA ATSUSHI

IPC: H01L27/14 ,  G02B3/00 ,  H04N5/369

CPC classification number: H01L27/14625

Abstract: 【課題】設計の自由度に制約を与えることなく、低コストで画素サイズの小型化と解像度の向上を実現できるようにする。【解決手段】受光面に対して垂直方向に屈折率が高く、かつチップ面に対して平行方向に屈折率が低い複屈折材料により構成される透明基板を、前記受光面上に配置して成る。【選択図】図4

Abstract translation: 要解决的问题：使得可以以低成本小尺寸的像素尺寸并且提高分辨率而不限制设计的自由度。解决方案：固态图像拾取装置通过在光接收平面上设置透明基板 由折射率垂直于光接收面的双折射材料构成，并且其平行于芯片平面的方向的折射率低。

公开(公告)号：JP2014078015A

公开(公告)日：2014-05-01

申请号：JP2013242598

申请日：2013-11-25

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TODA ATSUSHI

IPC: G02B5/18 ,  G02B3/08 ,  H01L27/14 ,  H04N5/335 ,  H04N5/359 ,  H04N5/361 ,  H04N5/369 ,  H04N5/3728 ,  H04N5/374

CPC classification number: H01L31/18 ,  G02B5/188 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685

Abstract: PROBLEM TO BE SOLVED: To solve problems caused from a thick optical lens constituted integrally with a solid imaging apparatus.SOLUTION: Compared to the optical length (lens length), a relatively thin alternate arrangement layer 2 includes a high refractive index layer 21 having a larger refractive index and a low refractive index layer 20 having a smaller refractive index arranged alternately in a lateral direction with respect to an optical axis. The width of the high refractive index layer 21 and the low refractive index layer 20 is set to be equal to or less than a wavelength order of an incident light. The high refractive index layers 21 are disposed densely in a mechanical central area of the alternate arrangement layer 2A and gets sparsely as away from the center; or the lower refractive index layer 20 are dispose sparsely in a mechanical central area of the alternate arrangement layer 2A and gets densely as away from the center symmetric laterally to form a convex lens. Since the alternate arrangement layer 2A is shorter than the optical length, the alternate arrangement layer 2A can be formed thinner than a refraction type lens structure utilizing the Snell's law. The problems which occur on conventional lenses having relatively thick structure can be reduced or eliminated.

Abstract translation: 要解决的问题：解决由与固体成像装置整体构成的厚光学透镜引起的问题。解决方案：相对于光学长度（透镜长度），相对薄的替代布置层2包括高折射率层21，其具有 较大的折射率和折射率较小的低折射率层20相对于光轴在横向上交替布置。 高折射率层21和低折射率层20的宽度被设定为等于或小于入射光的波长顺序。 高折射率层21密集地设置在交替布置层2A的机械中心区域，并且稀疏地远离中心; 或者较低折射率层20稀疏地配置在交替布置层2A的机械中心区域中，并且密集地远离中心对称地横向以形成凸透镜。 由于交替布置层2A比光学长度短，因此可以使用Snell定律将替代布置层2A形成为比折射型透镜结构薄。 可以减少或消除在具有相对较厚结构的常规透镜上出现的问题。

公开(公告)号：JP2012004443A

公开(公告)日：2012-01-05

申请号：JP2010139689

申请日：2010-06-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TODA ATSUSHI ,  HIRAYAMA TERUO

IPC: H01L27/146 ,  H01L27/14 ,  H04N5/357 ,  H04N5/374

CPC classification number: H01L27/14607 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14687 ,  H01L31/022466 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521 ,  Y10T29/49002

Abstract: PROBLEM TO BE SOLVED: To provide a solid state image pickup device and an electronic apparatus, capable of easily providing reduced size and preventing generation of noise to suppress an occurrence of failures such as deterioration in an image quality of a picked-up image.SOLUTION: A photoelectric conversion film 13 formed to shield incident light H is provided to be closer to a side where the incident light H enters than a readout circuit 51 and n-type impurity regions 12, 411 in a silicon substrate 11. Thereby, the incident light H entering the readout circuit 51 and the n-type impurity regions 12, 411 is shielded by the photoelectric conversion film 13.

Abstract translation: 要解决的问题：为了提供一种固态图像拾取装置和电子装置，能够容易地提供减小的尺寸并防止产生噪声，以抑制诸如拾取图像质量的劣化的故障的发生 图片。 解决方案：形成为遮蔽入射光H的光电转换膜13设置成比硅衬底11中的读出电路51和n型杂质区12,411更靠近入射光H入射的一侧。 由此，进入读出电路51的入射光H和n型杂质区域12,411被光电转换膜13屏蔽。版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011146635A

公开(公告)日：2011-07-28

申请号：JP2010008186

申请日：2010-01-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TODA ATSUSHI

IPC: H01L31/10 ,  H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14609 ,  H01L31/0322

Abstract: PROBLEM TO BE SOLVED: To provide a solid-state imaging device that suppresses a dark current and has increased sensitivity by having a photoelectric conversion film with good crystallinity and a high coefficient of light absorption. SOLUTION: A solid-state imaging device includes, on a silicon substrate 11, the photoelectric conversion film 13 composed of a chalcopyrite-based compound semiconductor comprising: a lattice-matched copper-aluminum-gallium-indium-sulfur-selenium(CuAlGaInSSe)-based mixed crystal; or a copper-aluminum-gallium-indium-zinc-sulfur-selenium(CuAlGaInZnSSe)-based mixed crystal. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决的问题：提供通过具有良好的结晶度和高吸收光系数的光电转换膜来抑制暗电流并且具有增加的灵敏度的固态成像装置。 解决方案：固态成像装置在硅衬底11上包括由基于黄铜矿的化合物半导体构成的光电转换膜13，该光电转换膜包括：晶格匹配的铜 - 铝 - 镓 - 铟 - 硫 - 硒（ CuAlGaInSSe）基混合晶体; 或铜 - 镓 - 镓 - 铟 - 锌 - 硫 - 硒（CuAlGaInZnSSe）基混合晶体。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011096732A

公开(公告)日：2011-05-12

申请号：JP2009246866

申请日：2009-10-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KOSHINO YASUNORI ,  TODA ATSUSHI ,  OTSUKA YOICHI

IPC: H01L27/14 ,  H04N5/335

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14685 ,  H04N5/3572 ,  H04N5/3575

Abstract: PROBLEM TO BE SOLVED: To provide a solid-state imaging device, capable of improving the efficiency of production or the like, and capable of enhancing the image quality of a sensed image, to provide a method of manufacturing the solid-state imaging device, and to provide an electronic apparatus. SOLUTION: A microlens 140 is formed so that a vertical section (an xz surface) as a vertical surface to an imaging surface (an xy surface) is formed in a rectangular shape. A first refractive-index layer 141 is formed of a material having a high refractive index (such as n1=1.7) in the microlens 140 in this case. A second refractive-index layer 142 is formed of the material having a low refractive index (such as n2=1.45) different from the first refractive-index layer 141. In the vertical section (the xz surface) of the microlens 140, an interface between the first refractive-index layer 141 and the second refractive-index layer 142 is formed along the vertical direction (z) to the imaging surface (the xy surface). COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决的问题：为了提供能够提高生产效率等并且能够提高感测图像的图像质量的固态成像装置，提供制造固态的方法 成像装置，并提供电子装置。 解决方案：形成微透镜140，使得作为成像表面（xy表面）的垂直表面的垂直截面（xz表面）形成为矩形形状。 在这种情况下，第一折射率层141由微透镜140中具有高折射率（例如n1 = 1.7）的材料形成。 第二折射率层142由具有与第一折射率层141不同的低折射率（例如n2 = 1.45）的材料形成。在微透镜140的垂直截面（xz表面）中，界面 沿着与成像面（xy面）的垂直方向（z）形成第一折射率层141和第二折射率层142之间。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009135550A

公开(公告)日：2009-06-18

申请号：JP2009069457

申请日：2009-03-23

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TODA ATSUSHI

IPC: H01L27/14 ,  H01L27/146 ,  H04N5/335 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

Abstract: PROBLEM TO BE SOLVED: To improve the effect of a correcting operation process for improving sensitivity and improving color reproduction using components on the long wavelength side. SOLUTION: In a solid-state imaging apparatus, the effective region of an infrared detection pixel is formed to a place deeper than the effective region of a visible light detection pixel. In the effective region of pixels in the depth direction from the surface of an N type semiconductor substrate, modulation doping is executed so that the concentration of N type dopants becomes lower as getting deeper from the surface side of the semiconductor substrate. P type dopants are executed so that the peak position of the concentration of the P type dopants becomes deeper than the peak position of the concentration of the N type dopants. In the solid-state imaging apparatus, since light reception sensitivity on the long wavelength side is improved, a sufficient correction result using the components on the long wavelength side is obtained to improve sensitivity and color reproduction. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提高校正操作处理的效果，用于提高灵敏度，并且改善使用长波长侧的组分的颜色再现。 解决方案：在固态成像装置中，红外线检测像素的有效区域形成在比可见光检测像素的有效区域更深的位置。 在从N型半导体衬底的表面的深度方向的像素的有效区域中，执行调制掺杂，使得N型掺杂剂的浓度随着从半导体衬底的表面侧变深而变低。 执行P型掺杂剂，使得P型掺杂剂的浓度的峰值位置比N型掺杂剂的浓度的峰值位置更深。 在固态成像装置中，由于长波长侧的光接收灵敏度得到改善，因此获得使用长波长侧的分量的充分校正结果，以提高灵敏度和色彩再现。 版权所有（C）2009，JPO＆INPIT