公开(公告)号：JPH06216006A

公开(公告)日：1994-08-05

申请号：JP2171993

申请日：1993-01-14

Applicant: SONY CORP

Inventor： ISHIDA MINORU

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To realize microscopic pattern lithography by increasing the focus depth margin when a resist is patterned. CONSTITUTION:An SiO2 film 36 and a polycide film 37 are patterned using the same pattern, and after a BPSG film 41 has been deposited, resist 42 is coated. After the resist 42 is left on the recessed part of the BPSG film 41 by etching back the resist 42 only, the BPSG film 41 and the SiO2 film 36 only are etched back using the resist 42 as a mask. The recessed part of the BPSG film 41 becomes deeper by the SiO2 film 36, and the resist 42 can be left on the recessed part easily. Accordingly, the BPSG film 41 and the SiO2 film 36 can be made flat in an excellent controllability, and the focus depth margin when the resist is patterned on the upper layer can be made large.

公开(公告)号：JPH06203491A

公开(公告)日：1994-07-22

申请号：JP74993

申请日：1993-01-06

Applicant: SONY CORP

Inventor： KAMATA AKIRA ,  ISHIDA MINORU

IPC: F16C29/04 ,  G11B21/02

Abstract: PURPOSE:To obtain the constitution capable of stably using it over a long term even when the wear occurs in a guiding device consisting of a guide shaft and a guide bearing of the traveled object of an optical pickup, etc., repeating high speed seek. CONSTITUTION:The guiding device is constituted so that the guide bearings 18a, 18b are attatched pivotally rotatably to bearing supporting members 25a, 25b attatched to both ends of the traveled object (slider 10), and are contacted slidably to the guide shafts 7a, 7b arranging side by side the guide bearings 18a, 18b. This device is used so that rotation mechanisms 28a, 28b, 29, 30, etc., rotating the guide shafts 7a, 7b are provided, and the contact parts between the guide shafts 7a, 7b and the guide bearings 18a, 18b are changed by rotating them.

公开(公告)号：JPH06120492A

公开(公告)日：1994-04-28

申请号：JP29224592

申请日：1992-10-06

Applicant: SONY CORP

Inventor： ISHIDA MINORU

IPC: H01L29/78 ,  H01L29/784

Abstract: PURPOSE:To sufficiently suppress a short-channel effect by sufficiently obtaining a punch-through withstand voltage and alleviating a junction electric field between a source.drain region and a buried layer in a semiconductor device having the buried layer. CONSTITUTION:A gate electrode 14 is formed on a semiconductor substrate 11 provided with a first conductivity type (N type) buried layer 12 therein through a gate insulating film 13, and second conductivity type (P ) source.drain regions 15, 16 are formed on the substrate 11 on the layer 12 at both sides. First conductivity type (N type) low concentration regions 17, 19 having lower concentration than that of the layer 12 are formed on the lower layers. Second conductivity type (P type) low concentration regions than those of the regions 15, 16 are formed at gate electrode 14 sides of the regions 15, 16.

公开(公告)号：JPH06120350A

公开(公告)日：1994-04-28

申请号：JP28504992

申请日：1992-09-30

Applicant: SONY CORP

Inventor： ISHIDA MINORU

IPC: H01L21/82

Abstract: PURPOSE:To obtain an overcoat which excels in coverage and is strong enough against the separation of its film and excels in flatness and moisture proofness and also to obtain a suitable structure even for such a construction as to require the breakage of a fuse. CONSTITUTION:This is a semiconductor device provided with a fuse for redundancy in which SOG 3a to 3d is formed between wiring structures 2a, 2b, end the SOG 3a to 3d are formed into an isolated structure parted for every wiring structure, and at the same time an opening 4 is formed in the corresponding position of the SOG above the fuse for redundancy, and an insulating side wall 5 is formed on the sidewall of the opening.

公开(公告)号：JPH0574807A

公开(公告)日：1993-03-26

申请号：JP26525891

申请日：1991-09-17

Applicant: SONY CORP

Inventor： ISHIDA MINORU

IPC: H01L29/78 ,  H01L21/336

Abstract: PURPOSE:To decrease the number of manufacturing steps, and to enable fining by forming source-drain in a self-alignment manner though the crystal defects of a semiconductor substrate are reduced and characteristics are excellent. CONSTITUTION:An element active region is surrounded by SiO2 films 15 formed in the element isolation region of an Si substrate 11, and recessed sections 22 are formed by a polycrystalline Si film 21 as a gate electrode and the SiO2 films 15. Polycrystalline Si films 31 fill the recessed sections 22 while being brought into contact with the Si substrate 11, and the polycrystalline Si films 31 function as source-drain. Accordingly, the polycrystalline Si films 31 may be etched flatly after deposition, and impurity ions need not be implanted into the Si substrate 11 in high concentration in order to form the source-drain.

公开(公告)号：JPH04299058A

公开(公告)日：1992-10-22

申请号：JP8990591

申请日：1991-03-27

Applicant: SONY CORP

Inventor： ISHIDA MINORU

IPC: G02B26/10 ,  G11B7/09 ,  H02K33/16

Abstract: PURPOSE:To perform proper tracking by preventing the displacement of the surface of a mirror provided on a galvano-motor when an optical disk device is used even when the attitude of the mirror changes. CONSTITUTION:At the time of fitting a mirror supporting member 35 to which a mirror 15 is fixed to a yoke 29 by means of a plate spring 38, the supporting point of the member 35 is brought to the center of gravity of the member 35.

公开(公告)号：JPH03257863A

公开(公告)日：1991-11-18

申请号：JP5583490

申请日：1990-03-07

Applicant: SONY CORP

Inventor： ISHIDA MINORU ,  YOSHIHARA IKUO

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

Abstract: PURPOSE:To realize good flatness of a surface of a memory cell section by forming a first conductivity type gate electrode of a transistor and a second conductivity type cell plate which constitutes an electrode of a capacitor of the same polycrystalline silicon film integrally. CONSTITUTION:After a resist pattern 11 of a specified configuration whose section corresponding to word lines WL3 to WL6 is opened, p-type impurities are ion-implanted into a polycrystalline Si film 10. Then, after the resist pattern 11 is removed, electrical activation and diffusion of ion-implanted impurities are carried out. Then, a trap in the polycrystalline Si film 10 is non-activated by adding hydrogen. Thereby, an n -type source region 6 and an n -type semiconductor region 7 are formed in a p-well 2. Word lines WL5, WL6 which consist of a p -type polycrystalline Si film and a cell plate CP2 which consists of the n -type polycrystalline Si film 10 are formed integrally. Similary, work lines WL3, WL4 which consist of p -type polycrystalline Si film and cell plate CP2 which consists of the n -type polycrystalline Si film 10 are formed integrally.

公开(公告)号：JPH03161924A

公开(公告)日：1991-07-11

申请号：JP30142189

申请日：1989-11-20

Applicant: SONY CORP

Inventor： ISHIDA MINORU

IPC: H01L21/22 ,  H01L21/225 ,  H01L21/24

Abstract: PURPOSE:To perform introduction of impurities of an arbitrary concentration with high reliability and good reproducibility by a method wherein a monomolecular film or the cumulative film of a monomolecular film is formed of a molecule, which is a polar molecule and contains impurity atoms, on a substrate and the impurity atoms are occluded in the substrate by an irradiation of an energy line. CONSTITUTION:RH2PO4 containing an alkyl group R or RH2BO3 is used. As carbon atoms of the R group, 8 to 10 is preferable. The RH2PO4 or RH2BO3 is dissolved in CCl4 or the like and the dissolved RH2PO4 or RH2BO3 is developed on the surface of the water to form an LB film. An Si wafer with its oxidized surface is dipped into water having this monomolecular film and a solvent is acidified. An acid to be used may be a general-purpose organic or inorganic acid. An OH group in an SiO2 film on the wafer surface is made to perform an esterification together with a phospholic part, which is a polar molecule, and the LB film is adhered on the wafer surface in the form of the orientation of a phospholic group. The LB film is irradiated with Ar plasma and a P or B impurity is occluded in the substrate. The R group of the LB film is roughly removed by an ashing. The amount of the impurity to intrude into the Si substrate is minute, there is no adverse effect, the impurity is not flied in an ashing treatment and the impurities can be introduced with good reproducibility.

公开(公告)号：JPH02240616A

公开(公告)日：1990-09-25

申请号：JP6149489

申请日：1989-03-14

Applicant: SONY CORP

Inventor： ISHIDA MINORU ,  INANAGA KIYOFUMI

IPC: G02B26/10

Abstract: PURPOSE:To obtain the inexpensive optical deflector while maintaining various good characteristics, such as frequency characteristics and linearity, by using a piece of annular magnet as a magnet of the optical deflector of a moving iron type. CONSTITUTION:This optical deflector is constituted of the annular magnet 11 which is magnetized in a prescribed direction, yokes 12, 13 which are mounted thereto and are provided with tongue pieces 12a, 12b, 13a, 13b forming a pair of single magnetic poles of the magnetic poles on the inner peripheral side thereof, coils 21 which are disposed near a moving iron piece 14 and are disposed on the inner peripheral side of the annular magnet 11, a turning shaft 15 which is fixed with the moving iron piece 14 and is mounted with a mirror 18 at one end and an energizing means 19 which turns and energizes the turning shaft 15 so as to reset the same to a prescribed position. Since the magnet 11 used therein is just one piece in this way, the cost is low and since there is no need for winding the coils 21 on the yokes 12, 13, the production is easy; further, the moving iron piece 14 is directly magnetized by the coils 21 wound near the same and, therefore, the sure operation with a small current is possible.

公开(公告)号：JPS58185037A

公开(公告)日：1983-10-28

申请号：JP6703382

申请日：1982-04-21

Applicant: Sony Corp

Inventor： ISHIDA MINORU

IPC: G02B7/09 ,  G11B7/09

CPC classification number: G11B7/0932 ,  G11B7/0933

Abstract: PURPOSE:To eliminate the temperature change of braking characteristics, by braking a mobile member attached with an objective lens with the frictional resistance of a fiber type friction material, iron powder, etc. CONSTITUTION:A lens barrel 2 attached with an objective lens 1 is supported by plate panels 4a and 4b and driven in the focusing direction by a coil 6. A fiber type friction material 13 is implanted to a yoke 7 to produce friction between the matter 13 and a bobbin 5. As a reslut, the vibration of the barrel 2 is attenuated. It is also effective to use iron powder in place of the matter 13.

Abstract translation: 目的：为了消除制动特性的温度变化，通过用纤维型摩擦材料，铁粉等的摩擦阻力制动附带物镜的移动部件，制造出具有物镜1的镜筒2 由板面板4a和4b支撑并且通过线圈6在聚焦方向上被驱动。纤维型摩擦材料13被注入到轭架7中以在物质13和线圈架5之间产生摩擦。作为重新设计， 桶2被衰减。 使用铁粉代替物质也是有效的。