PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

    公开(公告)号:US20220037118A1

    公开(公告)日:2022-02-03

    申请号:US17311183

    申请日:2019-11-26

    Abstract: The plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, an upper electrode, a dielectric plate, and a waveguide. The stage is provided in the processing container. The dielectric plate is provided above the stage with a space in the processing container interposed therebetween. The upper electrode is provided above the dielectric plate. The waveguide has an end and guides high frequency waves in a VHF band or a UHF band. The end is arranged to face the space to radiate high frequency waves to the space. The dielectric plate includes a conductive film. The conductive film is provided on an upper surface of the dielectric plate. The upper surface faces the upper electrode. The conductive film is electrically connected to the upper electrode.

    PLASMA PROCESSING APPARATUS AND CONTROL METHOD

    公开(公告)号:US20210074517A1

    公开(公告)日:2021-03-11

    申请号:US17010035

    申请日:2020-09-02

    Abstract: There is provided a plasma processing apparatus including: a processing container; a first electrode provided inside the processing container and connected to a high-frequency power supply; a second electrode provided inside the processing container to face the first electrode, the second electrode being grounded; and a film thickness calculator connected to at least one of the first electrode and the second electrode and configured to calculate a thickness of a film deposited on the at least one of the first electrode and the second electrode.

    PLASMA DENSITY MONITOR, PLASMA PROCESSING APPARATUS, AND PLASMA PROCESSING METHOD.

    公开(公告)号:US20200381224A1

    公开(公告)日:2020-12-03

    申请号:US16883500

    申请日:2020-05-26

    Abstract: A plasma density monitor for monitoring a plasma density of surface wave plasma in a chamber accommodating a substrate and performs a plasma process on the substrate. The monitor includes: a monopole antenna installed to extend from a wall of the chamber toward an interior of the chamber and to be perpendicular to an inner wall surface of the chamber, and configured to receive a surface wave; a coaxial line configured to extract a detection value from a signal received by the monopole antenna; a length adjuster configured to adjust a length of the monopole antenna; and a controller configured to control the length adjuster so as to obtain a wavelength of the surface wave and the plasma density of the surface wave plasma from the wavelength of the surface wave.

    Power Combiner and Microwave Introduction Mechanism
    55.
    发明申请
    Power Combiner and Microwave Introduction Mechanism 有权
    电力组合器和微波介绍机制

    公开(公告)号:US20160358750A1

    公开(公告)日:2016-12-08

    申请号:US15166561

    申请日:2016-05-27

    CPC classification number: H01J37/3222 H01J37/32266 H01P1/18 H01P5/12 H03H7/40

    Abstract: A power combiner includes a main body composed of outer and inner conductors, a plurality of power introduction ports configured to introduce electromagnetic wave powers supplied through power supply lines into the main body, a power combining antenna configured to radiate electromagnetic waves to a space between the outer and inner conductors such that the powers are combined, and an output port through which the combined electromagnetic wave is outputted from the main body. The power combining antenna includes a plurality of antenna members, each of which has a first pole and a second pole that is in contact with the inner conductor, and a reflection part configured to reflect the electromagnetic waves.

    Abstract translation: 功率组合器包括由外导体和内导体组成的主体,多个功率引入端口,被配置为将通过电源线提供的电磁波引入主体;功率合成天线,被配置为将电磁波辐射到 外部和内部导体,使得功率被组合,以及输出端口,组合的电磁波通过该输出端口从主体输出。 功率合成天线包括多个天线构件,每个天线构件具有与内部导体接触的第一极和第二极以及被配置为反射电磁波的反射部。

    MICROWAVE HEATING APPARATUS AND PROCESSING METHOD
    56.
    发明申请
    MICROWAVE HEATING APPARATUS AND PROCESSING METHOD 审中-公开
    微波加热装置和加工方法

    公开(公告)号:US20150129586A1

    公开(公告)日:2015-05-14

    申请号:US14603910

    申请日:2015-01-23

    CPC classification number: H05B6/806 H01L21/324

    Abstract: A microwave heating apparatus includes a processing chamber having a top wall, a bottom wall and a sidewall, and configured to accommodate an object to be processed; a microwave introducing unit configured to generate a microwave for heating the object and introduce the microwave into the processing chamber; a plurality of supporting members configured to make contact with the object and support the object in the processing chamber. The microwave heating apparatus further includes a dielectric member provided between the object supported by the supporting members and the bottom wall while being apart from the object.

    Abstract translation: 微波加热装置包括具有顶壁,底壁和侧壁的处理室,并且被配置为容纳被处理物体; 微波引入单元,被配置为产生用于加热所述物体并将所述微波引入所述处理室的微波; 多个支撑构件,其构造成与所述物体接触并将所述物体支撑在所述处理室中。 微波加热装置还包括设置在由支撑构件支撑的物体和与该物体分离的底壁之间的电介质构件。

    MICROWAVE HEATING APPARATUS AND HEATING METHOD
    57.
    发明申请
    MICROWAVE HEATING APPARATUS AND HEATING METHOD 审中-公开
    微波加热装置和加热方法

    公开(公告)号:US20140367377A1

    公开(公告)日:2014-12-18

    申请号:US14293794

    申请日:2014-06-02

    Abstract: A microwave heating apparatus includes a phase control unit configured to change a phase of a standing wave of microwave introduced into the process chamber by the microwave introduction unit. The phase control unit includes a recessed portion with respect to an inner surface of the bottom wall. The phase control unit is formed of a bottom portion and a fixing plate installed at a lower surface of the bottom portion from the outer side of the process chamber. The phase of the standing wave in the process chamber is changed by the incidence and reflection of the microwave in the recessed portion of the phase control unit surrounded by metallic wall.

    Abstract translation: 微波加热装置包括:相位控制单元,被配置为通过微波引入单元改变引入到处理室的微波驻波的相位。 相位控制单元包括相对于底壁的内表面的凹部。 相位控制单元由从处理室的外侧安装在底部的下表面的底部和固定板形成。 处理室中的驻波的相位由金属壁包围的相位控制单元的凹部中的微波的入射和反射而改变。

    MICROWAVE RADIATION ANTENNA, MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS
    58.
    发明申请
    MICROWAVE RADIATION ANTENNA, MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS 有权
    微波辐射天线,微波等离子体源和等离子体处理装置

    公开(公告)号:US20140158302A1

    公开(公告)日:2014-06-12

    申请号:US14095563

    申请日:2013-12-03

    CPC classification number: H01J37/3222 H01J37/32201

    Abstract: A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas into the antenna body; a gas diffusion space configured to diffuse the processing gas in the antenna body; a plurality of gas outlets provided in the antenna body and configured to discharge the processing gas into the chamber; a plurality of slots provided in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets; and an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed. A metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave.

    Abstract translation: 微波辐射天线包括具有微波辐射表面的天线体; 处理气体入口,被配置为将处理气体引入到天线体中; 气体扩散空间,其构造成将所述处理气体扩散到所述天线体中; 多个气体出口,其设置在所述天线体中并且被配置为将所述处理气体排出到所述室中; 在槽与气体扩散空间和气体出口分离的状态下设置在天线体中的多个槽; 以及设置在天线体的微波辐射面侧的环状电介质部件,以覆盖形成槽的槽形成区域。 通过微波辐射通过狭缝和环形电介质构成的微波辐射表面形成金属表面波,并通过金属表面波产生表面波等离子体。

    PLASMA PROCESSING APPARATUS
    59.
    发明申请

    公开(公告)号:US20250104975A1

    公开(公告)日:2025-03-27

    申请号:US18975131

    申请日:2024-12-10

    Abstract: A plasma processing apparatus includes a chamber and a waveguide portion. The waveguide portion is configured to propagate electromagnetic waves to generate plasma within the chamber. The waveguide portion includes a resonator configured to resonate the electromagnetic waves therein. The resonator includes a microstrip and a dielectric member. A part of the dielectric member constitutes a dielectric layer of the microstrip.

    Remote Plasma Device and Plasma Processing Apparatus

    公开(公告)号:US20240412949A1

    公开(公告)日:2024-12-12

    申请号:US18674349

    申请日:2024-05-24

    Abstract: There is a remote plasma device comprising: a housing made of a metal; a dielectric disposed to fill the housing; a gas supply port disposed at the housing, and configured to supply a gas into the housing; a gas exhaust port disposed at the housing, and configured to discharge the gas from the housing; a gas line that is formed in the dielectric and connects the gas supply port and the gas discharge port; and an electromagnetic wave supply part disposed at the housing, and configured to supply electromagnetic waves into the housing and produce plasma in the gas line.

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