GRID AND NANOSTRUCTURE TRANSPARENT CONDUCTOR FOR LOW SHEET RESISTANCE APPLICATIONS
    65.
    发明申请
    GRID AND NANOSTRUCTURE TRANSPARENT CONDUCTOR FOR LOW SHEET RESISTANCE APPLICATIONS 有权
    用于低电阻应用的网格和纳米结构透明导体

    公开(公告)号:US20150313022A1

    公开(公告)日:2015-10-29

    申请号:US14703830

    申请日:2015-05-04

    Abstract: Transparent conductors and methods of forming same are provided. A transparent conductor can include a nanostructure layer and a low sheet resistance grid disposed on a transfer film surface having an acceptable level of surface roughness. The presence of the low sheet resistance grid lowers the sheet resistance of the transparent conductor to an acceptable level. After release of the transparent conductor from the transfer film, the surface roughness of the transparent conductor will be at least comparable to the surface roughness of the transfer film.

    Abstract translation: 提供了透明导体及其形成方法。 透明导体可以包括设置在具有可接受的表面粗糙度水平的转印膜表面上的纳米结构层和低电阻网格。 低电阻格栅的存在将透明导体的薄层电阻降低到可接受的水平。 在从转印膜释放透明导体之后,透明导体的表面粗糙度至少与转印膜的表面粗糙度相当。

    CONDUCTIVE NANOSTRUCTURE-BASED FILMS WITH IMPROVED ESD PERFORMANCE
    68.
    发明申请
    CONDUCTIVE NANOSTRUCTURE-BASED FILMS WITH IMPROVED ESD PERFORMANCE 有权
    具有改进的ESD性能的基于导电的纳米结构膜

    公开(公告)号:US20140340811A1

    公开(公告)日:2014-11-20

    申请号:US14260888

    申请日:2014-04-24

    Abstract: Optical stacks containing one or more patterned transparent conductor layers may be damaged by electrostatic discharges that occur during the optical stack manufacturing process. Such damage may result in non-conductive conductors within the patterned transparent conductor layer. An electrostatic discharge protected optical stack may include a substrate layer, a first anti-static layer having a sheet resistance of from about 106 ohms per square (Ω/sq) to about 109 Ω/sq, and a patterned transparent conductor layer. Methods of testing and assessing damage to patterned transparent conductors are provided.

    Abstract translation: 包含一个或多个图案化的透明导体层的光学堆叠可能由于在光学堆叠制造过程中发生的静电放电而损坏。 这种损坏可能导致图案化的透明导体层内的非导电导体。 静电放电保护光学堆叠可以包括基底层,具有约106欧姆/平方(约OHgr / sq)至约109&OHgr / sq的薄层电阻的第一抗静电层和图案化的透明导体层。 提供了测试和评估图案化透明导体损坏的方法。

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