公开(公告)号：US20110147847A1

公开(公告)日：2011-06-23

申请号：US12653971

申请日：2009-12-21

Applicant: Stephen M. Cea ,  Martin D. Giles ,  Kelin Kuhn ,  Jack T. Kavalieros ,  Markus Kuhn

Inventor： Stephen M. Cea ,  Martin D. Giles ,  Kelin Kuhn ,  Jack T. Kavalieros ,  Markus Kuhn

IPC: H01L29/78 ,  H01L21/762

CPC classification number: H01L29/785 ,  H01L21/76224 ,  H01L29/66795 ,  H01L29/7842

Abstract: The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present disclosure relates to forming isolation structures in strained semiconductor bodies of non-planar transistors while maintaining strain in the semiconductor bodies.

Abstract translation: 本公开涉及制造微电子器件的领域。 在至少一个实施例中，本公开涉及在保持半导体本体中的应变的同时在非平面晶体管的应变半导体本体中形成隔离结构。

公开(公告)号：US20100317470A1

公开(公告)日：2010-12-16

申请号：US12485493

申请日：2009-06-16

Applicant: Todd A. Cea ,  Russell A. Urban ,  Ronald E. Kovac

Inventor： Todd A. Cea ,  Russell A. Urban ,  Ronald E. Kovac

IPC: A63B43/06 ,  A63B67/00

CPC classification number: A63B43/06 ,  A63B67/06 ,  A63B2037/082

Abstract: A gaming bag including at least one outer wall defining a cavity, at least one light emitting source positioned adjacent the at least one outer wall, a filling material disposed within the cavity, and wherein the at least one light emitting source provides illumination. A method of lighting a gaming bag comprising the steps of providing a gaming bag comprising at least one outer wall defining a cavity, at least one light emitting source positioned adjacent the at least one wall, a shock sensor within the cavity, a filling material within the cavity, and wherein the at least one light emitting source provides illumination, tossing the gaming bag, measuring a force with the shock sensor upon impact with a surface, activating the light emitting source when the force is greater than the predetermined threshold, and deactivating the light emitting source after a predetermined amount of time.

Abstract translation: 包括限定空腔的至少一个外壁的游戏袋，邻近所述至少一个外壁定位的至少一个发光源，设置在所述空腔内的填充材料，并且其中所述至少一个发光源提供照明。 一种照明游戏袋的方法，包括以下步骤：提供游戏袋，其包括限定空腔的至少一个外壁，邻近所述至少一个壁定位的至少一个发光源，所述空腔内的冲击传感器， 并且其中所述至少一个发光源提供照明，折腾所述游戏袋，在与表面碰撞时测量与所述冲击传感器的力，当所述力大于所述预定阈值时激活所述发光源，以及停用 发光源经过预定的时间。

公开(公告)号：US20100163970A1

公开(公告)日：2010-07-01

申请号：US12317966

申请日：2008-12-31

Applicant: Titash Rakshit ,  Stephen M. Cea ,  Jack T. Kavalieros ,  Ravi Pillarisetty

Inventor： Titash Rakshit ,  Stephen M. Cea ,  Jack T. Kavalieros ,  Ravi Pillarisetty

IPC: H01L29/78

CPC classification number: H01L29/785 ,  H01L29/66795

Abstract: A trigate device having an extended metal gate electrode comprises a semiconductor body having a top surface and opposing sidewalls formed on a substrate, an isolation layer formed on the substrate and around the semiconductor body, wherein a portion of the semiconductor body remains exposed above the isolation layer, and a gate stack formed on the top surface and opposing sidewalls of the semiconductor body, wherein the gate stack extends a depth into the isolation layer, thereby causing a bottom surface of the gate stack to be below a top surface of the isolation layer.

Abstract translation: 具有延伸的金属栅电极的触发装置包括半导体本体，其具有形成在基板上的顶表面和相对的侧壁，形成在基板上并围绕半导体主体的隔离层，其中半导体主体的一部分保持暴露在隔离物的上方 层，以及形成在半导体主体的顶表面和相对侧壁上的栅极堆叠，其中栅极堆叠将深度延伸到隔离层中，从而使栅极堆叠的底表面在隔离层的顶表面下方 。

公开(公告)号：US07473591B2

公开(公告)日：2009-01-06

申请号：US11292428

申请日：2005-12-01

Applicant: Stephen M. Cea ,  Ravindra Soman ,  Ramune Nagisetty ,  Sunit Tyagi ,  Sanjay Natarajan

Inventor： Stephen M. Cea ,  Ravindra Soman ,  Ramune Nagisetty ,  Sunit Tyagi ,  Sanjay Natarajan

IPC: H01L21/00

CPC classification number: H01L29/66636 ,  H01L29/1054 ,  H01L29/7842

Abstract: Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.

Abstract translation: 用于在器件的沟道区域中形成应变硅层的各种方法以及根据所公开的方法构造的器件。 在一个实施例中，形成应变诱导层，在应变诱导层上形成松弛层，去除应变诱导层的一部分，这使得应变诱导层松弛并使应变放松层。

公开(公告)号：US07325940B2

公开(公告)日：2008-02-05

申请号：US11542843

申请日：2006-10-04

Applicant: Todd A. Cea ,  Russell A. Urban ,  Ron Kovac

Inventor： Todd A. Cea ,  Russell A. Urban ,  Ron Kovac

IPC: F21V33/00

CPC classification number: F21V33/0004 ,  A45C11/16 ,  A45C15/06 ,  A47F3/001 ,  A47F7/03

Abstract: An illuminated jewelry case comprising a base having a jewelry mounting location adapted for removably mounting a piece of jewelry; a lid pivotally connected to the base and movable between open and closed positions; at least one LED disposed on the lid for illuminating the jewelry mounting location when the lid is in the open position; and a ribbon cable in electrical communication with the at least one LED and a pair of battery contacts disposed on the base.

Abstract translation: 一种照明的首饰盒，包括具有适于可拆卸地安装一件首饰的首饰安装位置的基座; 盖子枢转地连接到基座并且可以在打开和关闭位置之间移动; 设置在所述盖上的至少一个LED，以在所述盖处于打开位置时照亮所述首饰安装位置; 以及与所述至少一个LED电连通的带状电缆和设置在所述基座上的一对电池触点。

公开(公告)号：US06982433B2

公开(公告)日：2006-01-03

申请号：US10459998

申请日：2003-06-12

Applicant: Thomas Hoffman ,  Stephen M. Cea ,  Martin D. Giles

Inventor： Thomas Hoffman ,  Stephen M. Cea ,  Martin D. Giles

IPC: H01L29/06 ,  H01L31/007 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: H01L21/823807 ,  H01L21/28044 ,  H01L29/1054 ,  H01L29/4925 ,  H01L29/7842 ,  H01L29/7845

Abstract: There is disclosed an apparatus including a substrate defining an interior of the apparatus, a device exterior to the substrate including a gate electrode, and a straining layer exterior to the gate electrode and exterior to the substrate.

Abstract translation: 公开了一种装置，其包括限定该装置的内部的基板，包括栅电极的基板外部的装置，以及栅电极外部的应变层和基板的外部。

公开(公告)号：US06838329B2

公开(公告)日：2005-01-04

申请号：US10404878

申请日：2003-03-31

Applicant: Cory E. Weber ,  Mark A. Armstrong ,  Stephen M. Cea ,  Giuseppe Curello ,  Sing-Chung Hu ,  Aaron D. Lilak ,  Max Wei

Inventor： Cory E. Weber ,  Mark A. Armstrong ,  Stephen M. Cea ,  Giuseppe Curello ,  Sing-Chung Hu ,  Aaron D. Lilak ,  Max Wei

IPC: H01L21/265 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/167 ,  H01L29/36

CPC classification number: H01L21/26586 ,  H01L21/26506 ,  H01L21/2652 ,  H01L21/823807 ,  H01L21/823892 ,  H01L29/167 ,  H01L29/36 ,  H01L29/665 ,  H01L29/6656

Abstract: A method and apparatus to form a high-concentration, indium-fluorine retrograde well within a substrate. The indium-fluorine retrograde well includes an indium concentration greater than about 3E18/cm3.

Abstract translation: 在衬底内形成高浓度的铟 - 氟逆行阱的方法和装置。 铟 - 氟逆行阱包括大于约3E18 / cm3的铟浓度。

公开(公告)号：US20040166649A1

公开(公告)日：2004-08-26

申请号：US10753172

申请日：2004-01-06

Applicant: SOITEC & CEA

Inventor： Severine Bressot ,  Olivier Rayssac ,  Bernard Aspar

IPC: H01L021/30 ,  H01L021/46

CPC classification number: C09J5/00 ,  B81C1/0038 ,  H01L21/76254 ,  H01L21/76259

Abstract: The invention relates to a method of removing a peripheral zone of adhesive while using a layer of adhesive in the process of assembling and transferring a layer of material from a source substrate to a support substrate. The method is remarkable in that it includes bonding the two substrates together by means of a curable adhesive so that an excess of adhesive is present. This assures proper bonding and provides a peripheral zone of adhesive outside of the joined substrates. Only that portion of adhesive is cured which is present in a connection zone between the substrates, and the peripheral zone of non-cured adhesive is removed prior to detaching the transferable layer. The invention is applicable to fabricating a composite substrate in the fields of electronics, opto-electronics, or optics.

Abstract translation: 本发明涉及一种在将源材料层组装和转移到支撑基底的过程中使用一层粘合剂时去除粘合剂周边区域的方法。 该方法是显着的，其包括通过可固化粘合剂将两个基底粘合在一起，使得存在过量的粘合剂。 这确保了适当的粘合，并且在接合的基底之外提供粘合剂的周边区域。 只有那部分粘合剂被固化，其存在于基底之间的连接区域中，并且在分离可转移层之前去除非固化粘合剂的周边区域。 本发明可应用于在电子学，光电子学或光学领域制造复合衬底。

公开(公告)号：US20040121558A1

公开(公告)日：2004-06-24

申请号：US10678127

申请日：2003-10-06

Applicant: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. ,  COMMISSARIAT A L'ENERGIE ATOMIQUE (CEA)

Inventor： Fabrice Letertre ,  Yves Mathieu Le Vaillant ,  Eric Jalaguier

IPC: H01L021/30

CPC classification number: H01L21/76254 ,  H01L21/2258

Abstract: A method of producing a substrate that has a transfer crystalline layer transferred from a donor wafer onto a support. The transfer layer can include one or more foreign species to modify its properties. In the preferred embodiment an atomic species is implanted into a zone of the donor wafer that is substantially free of foreign species to form an embrittlement or weakened zone below a bonding face thereof, with the weakened zone and the bonding face delimiting a transfer layer to be transferred. The donor wafer is preferably then bonded at the level of its bonding face to a support. Stresses are then preferably applied to produce a cleavage in the region of the weakened zone to obtain a substrate that includes the support and the transfer layer. Foreign species are preferably diffused into the thickness of the transfer layer prior to implantation or after cleavage to modify the properties of the transfer layer, preferably its electrical or optical properties. The preferred embodiment produces substrates with a thin InP layer rendered semi-insulating by iron diffusion.

Abstract translation: 一种制备具有从施主晶片转移到载体上的转移晶体层的衬底的方法。 转移层可以包括一种或多种外来物质来改变其性质。 在优选的实施方案中，将原子物质注入到施主晶片的基本上不含外来物质的区域中，以在其接合面下面形成脆化或弱化区域，其中弱化区域和键合面限定转移层为 转入。 然后优选地，施主晶片在其结合面的水平面处结合到支撑体上。 然后优选施加应力以在弱化区域的区域中产生切割，以获得包括载体和转移层的基底。 外来物质优选在植入之前或切割后扩散到转移层的厚度中，以改变转移层的性质，优选其电学或光学性质。 优选实施例产生具有通过铁扩散而半绝缘的薄InP层的衬底。

公开(公告)号：US4546944A

公开(公告)日：1985-10-15

申请号：US570917

申请日：1984-01-16

Applicant: Michael S. Cea

Inventor： Michael S. Cea

IPC: F21V21/10

CPC classification number: F21V21/116 ,  Y10T403/557

Abstract: A cap is provided for mounting a light fixture to a post having a longitudinal shaft of rectangular section extending therethrough. The cap includes a closure for the shaft bore having a drive cone secured to the closure and extending into the shaft interior. Fingers are mounted to the closure for transverse movement within the shaft. Each of the fingers has an inner edge abutting the cone and an outer edge adapted to engage the interior of the post when the finger is shifted outwardly. A drive screw extends through the closure and serves to drive the cone upwardly and hence the fingers outwardly.

Abstract translation: 提供了用于将灯具安装到具有延伸穿过其的矩形部分的纵向轴的柱的盖。 盖包括用于轴孔的封闭件，其具有固定到封闭件并延伸到轴内部的驱动锥。 手指安装在封闭件上以在轴内横向移动。 每个指状物具有邻接锥体的内边缘和当手指向外移动时适于接合柱体内部的外边缘。 驱动螺杆延伸穿过封闭件并用于向上驱动锥体，从而将手指向外驱动。