Abstract:
The present invention provides a method of fabricating a top-gate organic semiconductor transistor comprising: providing a substrate; depositing a source and drain electrode over the substrate; depositing an organic semiconductor material in a channel between the source and drain electrode and over at least a portion of the source and drain electrodes; depositing a dielectric material over the organic semiconductor material; depositing a gate electrode over the dielectric material and organic semiconductor material in the channel; removing a portion of the dielectric material and organic semiconductor material, wherein the gate electrode acts as a mask to shield the underlying organic semiconductor material and dielectric material during the step of removing.
Abstract:
An electronic device comprising: an electronic substrate comprising circuit elements; a double bank well-defining structure disposed over the electronic substrate, the double bank well-defining structure comprising a first layer of insulating material and a second layer of insulating material thereover, the second layer of insulating material having a lower wettability than the first layer of insulating material; and organic semiconductive material disposed in wells defined by the double bank well-defining structure.
Abstract:
An organic light-emitting device comprising an anode; a hole transport layer; a light-emitting layer; and a cathode, characterised in that the hole transport layer comprises a polymer having a repeat unit comprising a 9,9 biphenyl fluorene unit wherein the 9-phenyl rings are independently and optionally substituted and the fluorene unit is optionally fused.
Abstract:
This invention relates to pixel driver circuits for active matrix optoelectronic devices, in particular OLED (organic light emitting diodes) displays.We describe an active matrix optoelectronic device having a plurality of active matrix pixels each said pixel including a pixel circuit comprising a thin film transistor (TFT) for driving the pixel and a pixel capacitor for storing a pixel value, whereinsaid TFT comprises a TFT with a floating gate.
Abstract:
A method of fabricating an opto-electrical device, the method comprising the steps: depositing, on a substrate comprising a first electrode for injecting charge carriers of a first polarity, a composition comprising a conductive or semi-conductive organic material, a solvent, and a first additive; and, depositing a second electrode for injecting charge carriers of a second polarity opposite to the first polarity, wherein the first additive is a basic additive.
Abstract:
An optoelectronic display comprising a plurality of pixels, each pixel comprising a plurality of sub-pixels, wherein the optoelectronic display comprises a colour-forming layer which is patterned providing a plurality of discrete colour-forming regions in a two-dimensional array, and wherein an addressing array is provided for addressing the discrete colour-forming regions, at least some of the discrete colour-forming regions having portions which are separately addressable by the addressing array, each portion defining a sub-pixel of the optoelectronic display.
Abstract:
Image Processing Systems This invention generally relates to image processing systems. More particularly it relates to systems and methods for displaying images using mult i-line addressing (MLA) or total matrix addressing (TMA) techniques, and to techniques for post- processing of data for display generated by these techniques. Embodiments of the invention are particularly useful for driving OLED (organic light emitting diode) displays. We describe a method of driving an electroluminescent display to display an image using a plurality of temporal sub-frames, data for a said sub-frame comprising a first set of drive values (R;C) and second set of drive values (C;R) for driving respective first and second axes of said display, a said sub-frame having an associated sub-frame display time. The method comprises: determining a said sub-frame display time for a displayed sub-frame responsive to one or more of said drive values for the sub-frame; and driving said display to display said temporal sub-frames for respective said sub- frame display times.
Abstract:
This invention relates to structures and fabrication methods for organic electronic devices, in particular organic light emitting diodes (OLEDs). A organic electronic device structure (500), the structure comprising: a substrate (506); a base layer (508) supported by said substrate (506) and defining the base of a well (502) for solvent- based deposition of organic electronic material (510, 512); one or more spacer layers (514) formed over said base layer (508); a bank layer (504) formed over said spacer layer (514) to define a side of said well (502); and wherein an edge of said well (502) adjacent said base layer (508) is undercut to define a shelf (516) over said base layer (508), said shelf (516) defining a recess to receive said organic electronic material (510).
Abstract:
The present invention relates to organic electro-luminescent devices, in particular to methods of increasing device lifetime in organic-electro luminescent devices. We will describe an organic electroluminescent device comprising a substrate, a first electrode layer overlying said substrate, an electroluminescent layer overlying said first electrode layer, a second electrode layer overlying said electroluminescent layer, and an encapsulating layer joined to the substrate to cover the organic electroluminescent layer, wherein said electroluminescent layer is surrounded by a ring of getter material that is disposed in a retaining means provided on or in said substrate and/or said encapsulating layer
Abstract:
An organic light emissive device comprising: a cathode; a transparent anode (22), and an organic light emissive region (23) which comprises subpixels of red, green and blue light emitting materials and is positioned between the cathode (24, 28) and the anode so that the cathode injects electrons into each subpixel, wherein the cathode comprises a reflective silver layer (28) and a transparent barium layer, in which the barium layer (24) is positioned between the silver layer and the organic light emissive region.