公开(公告)号：JP2006278999A

公开(公告)日：2006-10-12

申请号：JP2005100248

申请日：2005-03-30

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： KURACHI SHUNSUKE ,  KOMATANI TSUTOMU

IPC: H01L21/205 ,  C30B29/38 ,  H01L21/02 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01S5/183 ,  H01S5/343

CPC classification number: H01L21/3185 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02664 ,  H01L21/3143 ,  H01L21/31604 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/7787 ,  H01L2924/0002 ,  H01S5/0201 ,  H01S5/0207 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/34333 ,  H01S2301/173 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor substrate in which occurrence of warp and crack can be suppressed effectively and stripping of each surface of a semiconductor layer can be prevented, and to provide a substrate for growing semiconductor crystal, a semiconductor device, an optical semiconductor device, and their manufacturing processes.
SOLUTION: The semiconductor substrate (100) comprises a semiconductor crystal layer (2) grown on one surface of a substrate (1), and a stress relax layer (3) formed on the other surface and the side face of the substrate (1) and imparting a stress to the substrate (1) in the same direction as that of a stress being imparted to the substrate (1) by the semiconductor crystal layer (2). Since the stress being imparted to the substrate (1) by the semiconductor crystal layer (2) is offset, occurrence of warp and crack in the semiconductor substrate (100) is suppressed.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供可以有效地抑制发生翘曲和裂纹的半导体衬底，并且可以防止半导体层的每个表面的剥离，并且提供用于生长半导体晶体的衬底，半导体器件 ，光学半导体器件及其制造工艺。 解决方案：半导体衬底（100）包括在衬底（1）的一个表面上生长的半导体晶体层（2）和形成在衬底的另一个表面上的应力弛豫层（3） （1）并且通过半导体晶体层（2）以与施加到基板（1）的应力相同的方向向基板（1）施加应力。 由于通过半导体晶体层（2）赋予衬底（1）的应力偏移，所以抑制了半导体衬底（100）中的翘曲和裂纹的发生。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006278813A

公开(公告)日：2006-10-12

申请号：JP2005096903

申请日：2005-03-30

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： MATSUDA HAJIME

IPC: H01L27/095 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812

CPC classification number: H01L27/088 ,  H01L29/7785 ,  H01L29/7787 ,  H03K17/693

Abstract: PROBLEM TO BE SOLVED: To provide a switching circuit which is superior in higher harmonic characteristics and insertion loss, a semiconductor device and to provide its manufacturing method. SOLUTION: This switching circuit is provided with a first FET (81) connected to either an input terminal (70) or an output terminal (72), whose conduction/non-conduction is controlled by a gate electrode connected to a control terminal (74), and second FETs (82, 83, 84) connected between either the input terminal (70) or the output terminal (72) and a first FET (81), whose conduction/non-conduction is controlled by the gate electrode connected to the control terminal (74). The gate reverse breakdown voltage of the first FET is set so as to be larger than that of the second FET, or the off-capacity of the first FET is set so as to be smaller than that of the second FET. A semiconductor device and its manufacturing method are provided as well. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在高次谐波特性和插入损耗方面优异的开关电路，提供其半导体器件并提供其制造方法。 解决方案：该开关电路设置有连接到输入端子（70）或输出端子（72）的第一FET（81），其导通/不导通由连接到控制器的栅电极控制 端子（74）和连接在输入端子（70）或输出端子（72）之间的第二FET（82,83,84）和第一FET（81），其导通/非导通由栅极 连接到控制端子（74）的电极。 第一FET的栅极反向击穿电压被设定为大于第二FET的栅极反向击穿电压，或将第一FET的截止电容设定为小于第二FET的截止电容。 还提供半导体器件及其制造方法。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006242997A

公开(公告)日：2006-09-14

申请号：JP2005054438

申请日：2005-02-28

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： ITO MAKOTO ,  SAWADA SOSAKU

IPC: G02B6/42 ,  G02B6/32 ,  G02B7/02 ,  H01L31/0232

CPC classification number: G02B6/4227 ,  G02B6/4204

Abstract: PROBLEM TO BE SOLVED: To provide an optical device which has wide design degree of freedom and is readily assembled and to provide a manufacturing method therefor.
SOLUTION: The optical device is provided with a first optical component (10) having an end face (25) which is inclined with respect to the surface perpendicular to an optical axis, a second optical component (14) which is to be optically coupled to the first optical component and a lens (12) which is arranged between the first and the second optical components and is positioned so that a locus (17) of the focus of the first optical component is formed within an effective area (15) of the second optical component surface when the first and the second optical components are relatively rotated.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种具有宽的设计自由度并容易组装的光学装置，并提供其制造方法。 解决方案：光学装置设置有第一光学部件（10），其具有相对于垂直于光轴的表面倾斜的端面（25），第二光学部件（14）将成为 光耦合到第一光学部件和布置在第一和第二光学部件之间并且被定位成使得第一光学部件的焦点的轨迹（17）形成在有效区域（15）内的透镜（12） ）当所述第一和第二光学部件相对旋转时，所述第二光学部件表面。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006216791A

公开(公告)日：2006-08-17

申请号：JP2005028202

申请日：2005-02-03

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： LE TAILLANDIER DE GABORY EMMAN ,  AZUMA TOSHIO ,  YAMAUCHI YASUYUKI ,  TANAKA HIROKAZU ,  WATANABE JUNJI

IPC: H01S3/137

CPC classification number: H01S5/141 ,  H01S3/08031 ,  H01S3/1062 ,  H01S5/0612 ,  H01S5/0617 ,  H01S5/0683 ,  H01S5/0687

Abstract: PROBLEM TO BE SOLVED: To provide a laser device, a control device thereof, a control method thereof, control data thereof, a laser control method, and a wavelength switching method, capable of varying the optical intensity of a desired wavelength light, while efficiently outputting a desired wavelength.
SOLUTION: A laser device 100 is provided with a resonator (10), comprising an optical amplifier (11), a wavelength selecting means (14) with which the transmission wavelength range can be varied, and a mirror (15); and a control means (50) for controlling the wavelength selecting means (14), so that the transmitting wavelength range of the wavelength selecting means (14) varies in the desired range. The control means (50) controls the wavelength selecting means (14) so that the optical intensity of a desired oscillation wavelength become a desired value, while a resonator (10) outputs the desired oscillation wavelength, after controlling a wavelength selecting means (14) so that a resonator (10) outputs the desired oscillation wavelength.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：提供能够改变所需波长光的光强度的激光装置，其控制装置，其控制方法，其控制数据，激光控制方法和波长切换方法 同时有效地输出期望的波长。 解决方案：激光装置100设置有谐振器（10），包括光放大器（11），可以改变透射波长范围的波长选择装置（14）和反射镜（15）; 以及用于控制波长选择装置（14）的控制装置（50），使得波长选择装置（14）的发射波长范围在期望的范围内变化。 控制装置（50）控制波长选择装置（14），使得期望的振荡波长的光强度成为期望值，而在控制波长选择装置（14）之后，谐振器（10）输出期望的振荡波长， 使得谐振器（10）输出期望的振荡波长。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006173386A

公开(公告)日：2006-06-29

申请号：JP2004364555

申请日：2004-12-16

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： NISHI SHINKO

IPC: H01L33/32 ,  H01L33/40 ,  H01L33/56

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device wherein no ohmic contact takes place, and to provide its manufacturing method. SOLUTION: An Al-containing ohmic electrode 2, a barrier metallic layer 5 made of TiWN, and an Au wire electrode 7 are sequentially formed on one side of a GaN group semiconductor layer 1. Since the barrier metal layer 5 made of the TiWN is formed between the Al-containing ohmic electrode 2 and the Au wire electrode 7, the reaction can be prevented between the Al in the Al-containing ohmic electrode 2 and the Au in the Au wire electrode 7. Thus, the deterioration can be prevented in the characteristic of the semiconductor device 100. Moreover, since the TiWN is excellent in the barrier performance even at a high temperature region, the reaction can be prevented between the Al in the Al-containing ohmic electrode 2 and the Au in the Au wire electrode 7 even when a high temperature anneal processing is applied to the semiconductor device 100. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种不发生欧姆接触的半导体器件，并提供其制造方法。 解决方案：在GaN族半导体层1的一侧依次形成含有Al的欧姆电极2，由TiWN制成的阻挡金属层5和Au线电极7.由于阻挡金属层5由 在含Al欧姆电极2和Au线电极7之间形成TiWN，可以防止含Al欧姆电极2中的Al与Au线电极7中的Au之间的反应。因此，劣化可以 此外，由于TiWN即使在高温区域也具有优异的阻挡性能，因此可以防止含Al欧姆电极2中的Al与Au含量高的Au中的反应 Au线电极7，即使对半导体器件100进行高温退火处理也是如此。（C）2006年，JPO＆NCIPI

公开(公告)号：JP2005249892A

公开(公告)日：2005-09-15

申请号：JP2004056870

申请日：2004-03-01

Applicant: Eudyna Devices Inc ,  Fujitsu Ltd ,  ユーディナデバイス株式会社 ,  富士通株式会社

Inventor： SASAKI KAZUYA ,  HINO MASATO ,  SUZUKI SHINYA ,  MIYOSHI MAKOTO

IPC: G02B6/36 ,  G02B6/42 ,  H01R13/66 ,  H05K5/03

CPC classification number: G02B6/4292 ,  G02B6/4246 ,  H01R13/665 ,  H01R2201/04

Abstract: PROBLEM TO BE SOLVED: To perform engagement/disengagement between a data link module resulting from modularizing a communication device or the like and a cage to/from which the data link module is inserted/removed, simultaneously with insertion/removal of the data link module.
SOLUTION: When a handle (3) is raised (shown in B) in such a state that a data link module (1) is inserted to a cage (4) with a lock pin (122) locked by fitting to a lock hole (43) in an insertion state (shown in A), a T-shaped tongue piece (22) is pushed down by cam operation of a plate cam (31), and an I-shaped tongue piece (42) is pushed down in accordance with this push-down, and thus the lock hole (43) is disengaged from the lock pin (122) so that the data link module is removed (shown in C).
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：在将通信装置等模块化所产生的数据链路模块与数据链接模块插入/移出的笼之间进行接合/脱离，同时插入/移除数据链接模块 数据链接模块 解决方案：当手柄（3）升起（如图B所示），在数据链接模块（1）插入到保持架（4）的状态下，锁定销（122）通过安装在锁定销 锁定孔（43）处于插入状态（如图A所示），T形舌片（22）通过板形凸轮（31）的凸轮操作被向下推动，并且推动I形舌片（42） 并且因此锁定孔43与锁定销（122）分离，从而移除数据链接模块（如C所示）。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005117433A

公开(公告)日：2005-04-28

申请号：JP2003350151

申请日：2003-10-08

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： HAMADA TOMOKO ,  NAKANO HIROSHI

IPC: H01P1/203 ,  H01P1/205

CPC classification number: H01P1/20381

Abstract: PROBLEM TO BE SOLVED: To provide a filter having a simple constitution and a high degree of freedom of design. SOLUTION: The filter comprises first and second line patterns (11, 12) each having a total length substantially equal to 1/2 the wavelength of a pass-band frequency and a resonator (13) located between the first and second line patterns to couple with them so as to function as an open stab which makes connection points between input/output terminals (15, 16) and the first and second line patterns like short-circuited as seen from both ends (14) of the first and the second line patterns. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有简单结构和高设计自由度的过滤器。 解决方案：滤波器包括第一和第二线路图案（11,12），每个线路图案的总长度基本上等于通带频率的波长的1/2，以及位于第一和第二线路之间的谐振器（13） 模式以与它们耦合以便起到使得输入/输出端子（15,16）之间的连接点与从第一和第二端部（14）看到的短路的第一和第二线路图形之间的连接点的作用， 第二行模式。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005070460A

公开(公告)日：2005-03-17

申请号：JP2003300489

申请日：2003-08-25

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： OTAKE FUMIO

IPC: G02B6/12 ,  G02F1/017 ,  G02F1/035 ,  G02F1/225

CPC classification number: G02F1/2255 ,  G02F1/2257 ,  G02F2201/122 ,  G02F2201/127

Abstract: PROBLEM TO BE SOLVED: To provide an optical semiconductor device with which highly precise optical modulation is efficiently carried out, an optical phase control device, an optical intensity control device, and a method for manufacturing the optical semiconductor device. SOLUTION: An optical modulator 1A has isolation electrodes 2a, 2b and 2c, isolation electrodes 3a, 3b and 3c and conductive region 8 to form a modulation region on optical waveguides 5a and 5b on a substrate 1. The isolation electrodes 2a, 2b and 2c are mounted on a signal line 2 on the side opposite to a ground line 3 with the optical waveguides 5a and 5b interposed in between, and further, the signal line 2 is extended to the side of the ground line 3 on the substrate 1. As a result, a region (an overlap region 9) where the signal line 2 and the optical waveguides 5a and 5b overlap with one another is present. Consequently a conductive region 8 is formed on a region other than a region corresponding to the overlap region 9, that is, a region on the substrate 1 opposite to the signal line with the optical waveguides 5a and 5b interposed in between. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种光学半导体装置，其具有高精度的光调制被有效地实现，光学相位控制装置，光强度控制装置和用于制造光学半导体装置的方法。 解决方案：光调制器1A具有隔离电极2a，2b和2c，隔离电极3a，3b和3c以及导电区8，以在衬底1上的光波导5a和5b上形成调制区。隔离电极2a， 2b和2c安装在与接地线3相对的一侧上的信号线2上，光波导5a和5b插在其间，并且信号线2延伸到衬底上的接地线3侧 结果，存在信号线2和光波导5a和5b彼此重叠的区域（重叠区域9）。 因此，导电区域8形成在与重叠区域9相对应的区域以外的区域上，即，与介于其间的光波导5a和5b与信号线相对的基板1上的区域。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005061843A

公开(公告)日：2005-03-10

申请号：JP2003207222

申请日：2003-08-11

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： ONO HARUYOSHI

IPC: G01J1/02 ,  G01J3/02 ,  G01J3/36 ,  G01J9/00 ,  H01J40/14 ,  H01L31/10 ,  H01S3/093

CPC classification number: G01J3/02 ,  G01J3/0256 ,  G01J3/0286 ,  G01J3/0291 ,  G01J9/00

Abstract: PROBLEM TO BE SOLVED: To provide a wavelength measuring instrument, a light-receiving unit and a wavelength measuring method for capable of easily realizing high precision wavelength characteristics, in a desired wavelength range. SOLUTION: A temperature control means, including a Peltier element 20, controls the peak wavelength of the sensitivity curve in a photoreception chip 10 on the light receiving unit 1a side to the side of wavelength shorter than the desired wavelength region, and controls a peak wavelength of a sensitivity curve in the light receiving chip 10 in a light receiving unit 1b side to the side of wavelength longer than the desired wavelength range, by respectively temperature-controlling the light receiving unit 1a and the light receiving unit 1b independently. A wavelength specifying range is set thereby, to include the desired wavelength range, and the wavelength of measured light 3 is specified accurately in the wavelength range. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供能够容易地实现所需波长范围内的高精度波长特性的波长测量仪器，光接收单元和波长测量方法。 解决方案：包括珀耳帖元件20的温度控制装置将光接收单元1a侧的光接收芯片10中的灵敏度曲线的峰值波长控制在比期望波长区域短的波长侧，并且控制 通过分别温度控制光接收单元1a和光接收单元1b，光接收单元1b中的光接收芯片10中的光接收芯片10的侧面的波长比想要的波长范围长的峰值波长。 由此设定波长指定范围，以包括期望的波长范围，并且在波长范围内精确地指定测量光3的波长。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2009238778A

公开(公告)日：2009-10-15

申请号：JP2008079037

申请日：2008-03-25

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： SOEJIMA REIKO ,  YUI KEIICHI ,  HORINO KAZUHIKO

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/42

Abstract: PROBLEM TO BE SOLVED: To improve ESD (Electro Static Discharge) breakdown voltage in a method of manufacturing a light emitting element. SOLUTION: A method of manufacturing a light emitting element includes a step of forming an MQW (Multi Quantum Well) active layer 24 that includes: the steps of forming a well layer 21 made of a nitride semiconductor; and forming a barrier layer 23 made of a nitride semiconductor on the well layer 21 at a growth temperature which is 130 to 150°C higher than the growth temperature of the well layer 21. The ESD breakdown voltage is improved by setting the difference in growth temperature between the barrier layer 23 and well layer 21 to not less than 130°C. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 解决的问题：在制造发光元件的方法中改进ESD（静电放电）击穿电压。 解决方案：制造发光元件的方法包括形成MQW（多量子阱）有源层24的步骤，其包括：形成由氮化物半导体制成的阱层21的步骤; 在阱层21上形成由氮化物半导体构成的阻挡层23，其生长温度比阱层21的生长温度高130〜150℃。通过设定生长差异来提高ESD击穿电压 阻挡层23和阱层21之间的温度为130℃以上。 版权所有（C）2010，JPO＆INPIT