Apparatus and method for making free standing diamond
    64.
    发明公开
    Apparatus and method for making free standing diamond 失效
    Vorrichtung und Verfahren zur Herstellung von frei stehenden Diamanten

    公开(公告)号:EP0727507A2

    公开(公告)日:1996-08-21

    申请号:EP96200262.2

    申请日:1996-02-06

    CPC classification number: C23C16/01 C23C16/26 Y10S117/915

    Abstract: A mandrel for use in a diamond deposition process has surfaces with different diamond adhesion properties. According to one embodiment, a mandrel is provided and has first and second surfaces on which a diamond film is deposited, with the second surface forming a perimeter around the first surface. The first surface of the mandrel has a first diamond bonding strength which is less than a second diamond bonding strength of the second surface. In an embodiment for forming a cup-shaped diamond film, the mandrel is a titanium nitride (TiN) coated molybdenum (Mo) substrate having a stepped solid cylindrical shape with a central mesa having a side wall or flank. The side wall is etched near the top surface of the mesa to expose a molybdenum band and to form a second surface which bounds the TiN first surface. When the molybdenum band loses efficiency as a result of diamond particles remaining in the molybdenum band after a diamond deposition procedure, a second strip of the TiN coating adjacent to the first strip may be etched or machined to expose a second band of molybdenum. Other embodiments of the invention include machining the molybdenum band on the mesa top surface, machining a stepped molybdenum band, using a separate and detachable molybdenum foil or wire applied to grooves in the mandrel, and forming radial lines or patches on the surface of the mandrel.

    Abstract translation: 用于金刚石沉积工艺的心轴具有不同金刚石粘合性能的表面。 根据一个实施例,提供了心轴,并且具有沉积金刚石膜的第一和第二表面,其中第二表面围绕第一表面形成周边。 心轴的第一表面具有小于第二表面的第二金刚石结合强度的第一金刚石结合强度。 在用于形成杯状金刚石膜的实施例中,心轴是具有阶梯状实心圆柱形状的氮化钛(TiN)涂覆的钼(Mo)衬底,其中央台面具有侧壁或侧面。 在台面的顶表面附近蚀刻侧壁以暴露钼带并形成界定TiN第一表面的第二表面。 当在金刚石沉积程序之后钼带由于保留在钼带中的金刚石颗粒而导致效率降低时,可以蚀刻或加工与第一条带相邻的TiN涂层的第二条带以露出第二条钼带。 本发明的其它实施例包括在台面顶表面上加工钼带,使用施加到心轴中的凹槽的单独的和可拆卸的钼箔或线来加工阶梯式钼带,以及在心轴表面上形成径向线或贴片 。

    Hipped silicon nitride having a reduced reaction layer
    66.
    发明公开
    Hipped silicon nitride having a reduced reaction layer 失效
    具有减少的反应层的载带氮化硅

    公开(公告)号:EP0721926A2

    公开(公告)日:1996-07-17

    申请号:EP95203673.9

    申请日:1995-12-30

    CPC classification number: C03C3/089 Y10T428/265

    Abstract: A glass embedded, sintered ceramic comprising a total sintering aid concentration of between about 1 and about 5 w/o, said ceramic having a reaction layer of less than about 750 microns, where the reaction layer is defined as the depth at which the sintering aid concentration is 80% of that of the bulk of the ceramic, and the ceramic is selected from the group consisting of silicon nitride, silicon carbide, boron carbide, titanium diboride, and aluminum nitride.

    Abstract translation: 包含约1至约5w / o的总烧结助剂浓度的玻璃嵌入烧结陶瓷,所述陶瓷具有小于约750微米的反应层,其中反应层被定义为烧结助剂 浓度为陶瓷体积的80%,陶瓷选自氮化硅,碳化硅,碳化硼,二硼化钛和氮化铝。

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