Non-volatile multi-level memory device and data read method
    61.
    发明授权
    Non-volatile multi-level memory device and data read method 有权
    非易失性多级存储器件和数据读取方式

    公开(公告)号:US08811094B2

    公开(公告)日:2014-08-19

    申请号:US13528886

    申请日:2012-06-21

    Abstract: A non-volatile memory device, a data read method thereof and a recording medium are provided. The method includes receiving a data read command for a first word line in a memory cell array, reading data from a second word line adjacent to the first word line, and reading data from the first word line using a different voltage according to a state of the data read from the second word line. The number of read voltages used to distinguish an erased state and a first programmed state is greater than the number of read voltages used to distinguish a second programmed state and a third programmed state.

    Abstract translation: 提供非易失性存储器件,其数据读取方法和记录介质。 该方法包括接收存储单元阵列中的第一字线的数据读取命令,从与第一字线相邻的第二字线读取数据,以及根据第一字线的状态从第一字线读取数据,使用不同的电压 从第二个字线读取数据。 用于区分擦除状态和第一编程状态的读取电压的数量大于用于区分第二编程状态和第三编程状态的读取电压的数量。

    Water pump for vehicle
    62.
    发明授权
    Water pump for vehicle 有权
    车用水泵

    公开(公告)号:US08794909B2

    公开(公告)日:2014-08-05

    申请号:US12917256

    申请日:2010-11-01

    Applicant: Bong Sang Lee

    Inventor: Bong Sang Lee

    CPC classification number: F04D29/049 F04D13/027

    Abstract: A water pump for a vehicle, may include a first shaft fixed to a pulley to be rotated thereby, a second shaft fixed to an impeller for pumping, and clutch that is disposed between the first shaft and the second shaft to selectively connect the first and second shafts to transfer a rotation torque of the first shaft to the second shaft.

    Abstract translation: 一种用于车辆的水泵可以包括固定到要旋转的滑轮的第一轴,固定到用于泵送的叶轮的第二轴以及设置在第一轴和第二轴之间的离合器,以选择性地连接第一和第二轴 第二轴将第一轴的旋转扭矩传递到第二轴。

    Flash memory device and related program verification method
    65.
    发明授权
    Flash memory device and related program verification method 有权
    闪存设备及相关程序验证方法

    公开(公告)号:US08675416B2

    公开(公告)日:2014-03-18

    申请号:US13235533

    申请日:2011-09-19

    Applicant: Ji-Sang Lee

    Inventor: Ji-Sang Lee

    CPC classification number: G11C16/3459

    Abstract: A nonvolatile memory device performs a program operation using an incremental pulse programming (ISPP) scheme in which a plurality of program loops alternate between a coarse-fine verify operation, and a fine verify operation according to a value of a program loop counter.

    Abstract translation: 非易失性存储器件使用增量脉冲编程(ISPP)方案来执行编程操作,其中多个程序循环根据程序循环计数器的值在粗细验证操作和精细校验操作之间交替。

    SEMICONDUCTOR MEMORY DEVICE HAVING RESISTIVE MEMORY CELLS AND METHOD OF TESTING THE SAME
    66.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE HAVING RESISTIVE MEMORY CELLS AND METHOD OF TESTING THE SAME 有权
    具有电阻记忆体的半导体存储器件及其测试方法

    公开(公告)号:US20140022836A1

    公开(公告)日:2014-01-23

    申请号:US13945007

    申请日:2013-07-18

    Abstract: A semiconductor memory device includes a memory cell array, a mode register set and a test circuit. The memory cell array includes a plurality of wordlines, a plurality of bitlines, and a plurality of spin-transfer torque magneto-resistive random access memory (STT-MRAM) cells, and each STT-MRAM cell disposed in a cross area of each wordline and bitline, and the STT-MRAM cell includes a magnetic tunnel junction (MTJ) element and a cell transistor. The MTJ element includes a free layer, a barrier layer and a pinned layer. A gate of the cell transistor is coupled to a wordline, a first electrode of the cell transistor is coupled to a bitline via the MTJ element, and a second electrode of the cell transistor is coupled to a source line. The mode register set is configured to set a test mode, and the test circuit is configured to perform a test operation by using the mode register set.

    Abstract translation: 半导体存储器件包括存储单元阵列,模式寄存器组和测试电路。 存储单元阵列包括多个字线,多个位线和多个自旋转移转矩磁阻随机存取存储器(STT-MRAM)单元,每个STT-MRAM单元设置在每个字线的交叉区域 和位线,并且STT-MRAM单元包括磁隧道结(MTJ)元件和单元晶体管。 MTJ元件包括自由层,阻挡层和钉扎层。 单元晶体管的栅极耦合到字线,单元晶体管的第一电极通过MTJ元件耦合到位线,并且单元晶体管的第二电极耦合到源极线。 模式寄存器组被配置为设置测试模式,并且测试电路被配置为通过使用模式寄存器集执行测试操作。

    High flow polyvinyl halide compound and methods of making and using same
    70.
    发明授权
    High flow polyvinyl halide compound and methods of making and using same 有权
    高流动聚卤乙烯化合物及其制备和使用方法

    公开(公告)号:US08575247B2

    公开(公告)日:2013-11-05

    申请号:US13056654

    申请日:2009-08-04

    CPC classification number: C08K5/51 B29C45/0001 C08K5/57 C08L91/06 C08L27/06

    Abstract: A high flow polyvinyl halide compound is disclosed. The compound employs conventional ingredients plus a combination of phosphite stabilizer and hydrotalcite stabilizer which improve the melt flow index of the compound by at least 20%, as compared with a compound without the two types of stabilizers. The dramatically improved melt flow allows a molding cycle time reduction by as much as 22% because of a five-fold reduction in the fill step.

    Abstract translation: 公开了高流动聚卤乙烯化合物。 与没有两种类型的稳定剂的化合物相比,该化合物使用常规成分加上亚磷酸酯稳定剂和水滑石稳定剂的组合,其将化合物的熔体流动指数提高至少20%。 由于填充步骤减少了5倍,因此显着改善的熔体流动允许模制循环时间减少多达22%。

Patent Agency Ranking