Abstract:
A non-volatile memory device, a data read method thereof and a recording medium are provided. The method includes receiving a data read command for a first word line in a memory cell array, reading data from a second word line adjacent to the first word line, and reading data from the first word line using a different voltage according to a state of the data read from the second word line. The number of read voltages used to distinguish an erased state and a first programmed state is greater than the number of read voltages used to distinguish a second programmed state and a third programmed state.
Abstract:
A water pump for a vehicle, may include a first shaft fixed to a pulley to be rotated thereby, a second shaft fixed to an impeller for pumping, and clutch that is disposed between the first shaft and the second shaft to selectively connect the first and second shafts to transfer a rotation torque of the first shaft to the second shaft.
Abstract:
The manufacturing method for high-purity Zirconium is characterized by self-propagating high temperature synthesis (SHS) of a raw material having zirconium raw ore containing ZrO2, ZrSiO4, KZr2(PO4)3, or a mixture thereof and a reducing agent that is metal powder, to prepare zirconium intermetallic compound or zirconium nitride, followed by the recovery of high-purity Zr by electrolytic refining the reaction product of the SHS.
Abstract:
A mobile system may comprise a three-dimensional (3D) image sensor on a first surface of the mobile system configured to perform a first sensing to detect proximity of a subject and a second sensing to recognize a gesture of the subject by acquiring distance information for the subject; and/or a display device on the first surface of the mobile system to display results of the first sensing and the second sensing. A mobile system may comprise a light source unit; a plurality of depth pixels; and/or a plurality of color pixels. The light source unit, the plurality of depth pixels, or the plurality of color pixels may be activated based on an operation mode of the mobile system.
Abstract:
A nonvolatile memory device performs a program operation using an incremental pulse programming (ISPP) scheme in which a plurality of program loops alternate between a coarse-fine verify operation, and a fine verify operation according to a value of a program loop counter.
Abstract:
A semiconductor memory device includes a memory cell array, a mode register set and a test circuit. The memory cell array includes a plurality of wordlines, a plurality of bitlines, and a plurality of spin-transfer torque magneto-resistive random access memory (STT-MRAM) cells, and each STT-MRAM cell disposed in a cross area of each wordline and bitline, and the STT-MRAM cell includes a magnetic tunnel junction (MTJ) element and a cell transistor. The MTJ element includes a free layer, a barrier layer and a pinned layer. A gate of the cell transistor is coupled to a wordline, a first electrode of the cell transistor is coupled to a bitline via the MTJ element, and a second electrode of the cell transistor is coupled to a source line. The mode register set is configured to set a test mode, and the test circuit is configured to perform a test operation by using the mode register set.
Abstract:
A method and apparatus for processing a timestamp using signature information on a physical layer is provided. The timestamp processing terminal uses a pseudo-random binary sequence to assign signature information to a message which is to be sent to another terminal, and verifies the signature information on a physical layer. The signature information is used to identify the message as a sync message. Accordingly, it is possible to precisely process the timestamp.
Abstract:
Methods of operating nonvolatile memory devices may include identifying one or more multi-bit nonvolatile memory cells in a nonvolatile memory device that have undergone unintentional programming from an erased state to an at least partially programmed state. Errors generated during an operation to program a first plurality of multi-bit nonvolatile memory cells may be detected by performing a plurality of reading operations to generate error detection data and then decoding the error detection data to identify specific cells having errors. A programmed first plurality of multi-bit nonvolatile memory cells and a force-bit data vector, which was modified during the program operation, may be read to support error detection. This data, along with data read from a page buffer associated with the first plurality of multi-bit nonvolatile memory cells, may then be decoded to identify which of the first plurality of multi-bit nonvolatile memory cells are unintentionally programmed cells.
Abstract:
A pulsed magnet includes a cylindrical coil part having a hollow opening, and amorphous metal modules disposed along an outer circumference of the coil part and extending in a normal direction, which results in facilitation of cooling and minimization of generation of an eddy current.
Abstract:
A high flow polyvinyl halide compound is disclosed. The compound employs conventional ingredients plus a combination of phosphite stabilizer and hydrotalcite stabilizer which improve the melt flow index of the compound by at least 20%, as compared with a compound without the two types of stabilizers. The dramatically improved melt flow allows a molding cycle time reduction by as much as 22% because of a five-fold reduction in the fill step.