Abstract:
PROBLEM TO BE SOLVED: To provide a pattern forming method capable of simultaneously satisfying high sensitivity, high resolution (such as high resolution power), and high line width roughness (LWR) performance at an extremely high level, an electron beam sensitive or extreme ultraviolet ray sensitive resin composition and a resist film, and to provide a method for manufacturing an electronic device and an electronic device using the same.SOLUTION: A pattern forming method includes; (1) forming a film using an electron beam sensitive or extreme ultraviolet ray sensitive resin composition; (2) exposing the film with an electron beam or an extreme ultraviolet ray; and (3) developing the exposed film using a developer including an organic solvent. The electron beam sensitive or extreme ultraviolet ray sensitive resin composition includes: (A) a resin having a repeating unit (R) having a structural moiety decomposed by irradiation with an electron beam or an extreme ultraviolet ray to generate an acid; and (B) a solvent.
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray sensitive or radiation sensitive resin composition capable of suppressing occurrence of pattern collapse and improving line edge roughness, and to provide an actinic ray sensitive or radiation sensitive film and pattern forming method using the same.SOLUTION: An actinic ray sensitive or radiation sensitive resin composition includes: (A) a resin comprising a repeating unit represented by the following general formula (1) and a repeating unit that is decomposed by action of an acid to generate an alkali-soluble group; and (B) a compound generating an acid by irradiation with an actinic ray or radiation. In the general formula (1), L represents a divalent linking group. Rrepresents a hydrogen atom or an alkyl group, and Z represents a cyclic acid anhydride structure.
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition capable of reducing generation of scum and giving a pattern excellent in in-plane uniformity of line width (CDU (critical dimension uniformity)), and to provide a resist film and a pattern forming method using the composition.SOLUTION: There is provided an actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin that has a repeating unit represented by general formula (1) and exhibits increase in solubility with an alkali developing solution by an action of an acid; (B) an onium salt compound that has a nitrogen atom in a cationic moiety and is decomposed by irradiation with actinic rays or radiation to generate an acid; and (D) a solvent. A resist film and a pattern forming method using the above composition are also provided.
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition having an excellent in resolution such as a critical dimension with no bridge defects, LWR and DOF, and having favorable sensitivity and PED stability; and to provide a resist film using the composition, and a pattern forming method.SOLUTION: Provided are an actinic ray-sensitive or radiation-sensitive resin composition containing a repeating unit of a structure represented by the following general formula (EI), a resist film using the composition, and a pattern forming method. Each of R, R, and Rindependently represents an alkyl group or a cycloalkyl group. The Rand Rmay be bonded to form a ring. Each of Rand Rindependently represents a hydrogen atom, an alkyl group or a cycloalkyl group. Each of Rand Rindependently represents a hydrogen atom or a univalent organic group. Brepresents a single bond or a bivalent linking group. The R, R, R, R, and Bmay be bonded respectively to form a ring. (*) represents a bonding hand of a main chain or a side chain bond of the resin (A).
Abstract:
PROBLEM TO BE SOLVED: To provide a pattern formation method which is excellent in sensitivity, capability of reducing development defects, and pattern shape in negative pattern formation with a developer containing an organic solvent, and to provide a chemical amplification type resist composition and resist film.SOLUTION: A pattern formation method includes the steps of: (i) forming a film from a chemical amplification type resist composition which contains (A) a resin of which solubility in developer containing an organic solvent reduces due to increased polarity by an action of acid, (B) a compound which generates an acid upon exposure to actinic rays or radiation, and (C) a tertiary alcohol; (ii) exposing the film; and (iii) developing with the developer containing an organic solvent.
Abstract:
PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a pattern having a small number of development defects, and to provide a resist composition.SOLUTION: The pattern forming method includes (A) forming a film using the resist composition, (B) exposing the film, and (C) developing the exposed film using developing solution containing an organic solvent. The resist composition contains resin containing a repeating unit having a group that is decomposed by action of acid to generate an alcoholic hydroxy group, and a solvent containing at least one of the following component (S1) and component (S2). The component (S1) is propylene glycol monochrome alkyl ether carboxylate. The component (S2) is at least one selected from a group including propylene glycol monochrome alkyl ether, lactate, acetic acid ester, alkoxy propionic acid ester, chain ketone, cyclic ketone, lactone, and alkylene carbonate.
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic-ray- or radiation-sensitive resin composition excellent in etching resistivity and the stability during a post-exposure delay (PED) period, and to provide a method of forming a pattern using the same.SOLUTION: The actinic-ray- or radiation-sensitive resin composition contains: a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group; and a compound that generates an acid of pKa≥-1.5 when exposed to actinic rays or radiation.
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray- or radiation-sensitive resin composition capable of pattern formation that is improved in the pattern collapse, line edge roughness and scum occurrence, being free from any profile deterioration, and that exhibits appropriate following properties for the liquid for liquid immersion at the stage of liquid immersion exposure, while improving performance of reducing bubble defects, and to provide a method of forming a pattern with the use of the composition. SOLUTION: The actinic ray- or radiation-sensitive resin composition includes a resin (A) which has at least two polar conversion groups, includes a repeating unit (a) having at least either a fluorine atom or a silicon atom, and exhibits increased solubility in an alkali developer by the action of an acid. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray- or radiation-sensitive resin composition having good conformability to a liquid for liquid immersion during liquid immersion exposure and having good coverage dependence, from which a pattern reduced in the occurrence of watermark defects, bubble defects and development scum defects can be formed, and to provide a method for forming a pattern using the composition. SOLUTION: The actinic ray- or radiation-sensitive resin composition comprises a hydrophobic resin (HR) containing a fluorine atom, wherein the hydrophobic resin (HR) has any of repeating units (a) of formula (I) or (II). In the formulae, each of R 1 , R 2 , R 3 and R 4 independently represents a hydrogen atom, fluorine atom, chlorine atom, carboxyl, alkyl, cycloalkyl, alkyloxy, alkylcarbonyl, arylcarbonyl, alkylcarbonyloxy, arylcarbonyloxy, alkyloxycarbonyl, aryloxycarbonyl, alkylether, arylether, hydroxyl, alkylamide, arylamide, aryl, cyano, acid-decomposable group or alkali-decomposable group. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an active ray-sensitive or radiation-sensitive resin composition, with which a pattern having good corner proximity and fewer developing defects can be formed, and which causes little elution of an acid into an immersion liquid and shows proper properties to the immersion liquid, and to provide a method for forming a pattern by using the composition. SOLUTION: The composition includes (A) a resin whose solubility with an alkali developing solution is increased by the action of an acid; (B) a compound generating an acid by irradiation with active rays or radiation; and (C) a resin containing a repeating unit having a polarity conversion group that is decomposed by the action of an alkali developing solution, to increase the solubility with the alkali developing solution, and containing at least either a fluorine atom or a silicon atom, and (D) a nitrogen-containing organic compound, having a nitrogen-containing hetero ring expressed by formula (1). In the formula, R 1 represents a 2-20C straight-chain, branched or cyclic divalent substituent forming, together with nitrogen atoms bonded to both ends, a nitrogen-containing hetero aliphatic ring or a nitrogen-containing hetero aromatic ring, which may include an oxygen atom, nitrogen atom, sulfur atom or halogen atom; R 2 represents a 2-10C straight-chain or branched alkylene group which may include a carbonyl group; and R 3 represents a saturated or unsaturated hydrocarbon group or acyl group which may include a hydroxyl group, carbonyl group, ester group, ether group, cyano group or steroid skeleton or a combination of two or more of them. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation:要解决的问题:提供一种主动射线敏感或辐射敏感性树脂组合物,可以形成具有良好角接近性和较少显影缺陷的图案,并且几乎不会使酸洗到浸液中 并且对浸渍液体显示适当的性质,并提供通过使用该组合物形成图案的方法。 解决方案:组合物包括(A)其与碱性显影液的溶解度通过酸的作用而增加的树脂; (B)通过用活性射线或辐射照射产生酸的化合物; 和(C)含有具有通过碱性显影液的作用分解的极性转换基的重复单元的树脂,以增加与碱性显影液的溶解性,并且至少含有氟原子或硅原子, 和(D)含有式(1)表示的含氮杂环的含氮有机化合物。 在该式中,R 1 SP>表示2-20C直链,支链或环状二价取代基,与二价键合的氮原子一起形成含氮杂脂族环或含氮杂环 杂芳环,其可以包括氧原子,氮原子,硫原子或卤素原子; R 2表示可包括羰基的2-10C直链或支链亚烷基; R 3表示可以包括羟基,羰基,酯基,醚基,氰基或类固醇骨架的饱和或不饱和烃基或酰基,或者它们中的两个或多个的组合 。 版权所有(C)2011,JPO&INPIT