Abstract:
PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a pattern having a small number of development defects, and to provide a resist composition.SOLUTION: The pattern forming method includes (A) forming a film using the resist composition, (B) exposing the film, and (C) developing the exposed film using developing solution containing an organic solvent. The resist composition contains resin containing a repeating unit having a group that is decomposed by action of acid to generate an alcoholic hydroxy group, and a solvent containing at least one of the following component (S1) and component (S2). The component (S1) is propylene glycol monochrome alkyl ether carboxylate. The component (S2) is at least one selected from a group including propylene glycol monochrome alkyl ether, lactate, acetic acid ester, alkoxy propionic acid ester, chain ketone, cyclic ketone, lactone, and alkylene carbonate.
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic-ray- or radiation-sensitive resin composition excellent in etching resistivity and the stability during a post-exposure delay (PED) period, and to provide a method of forming a pattern using the same.SOLUTION: The actinic-ray- or radiation-sensitive resin composition contains: a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group; and a compound that generates an acid of pKa≥-1.5 when exposed to actinic rays or radiation.
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition that has improved performance of Line Width Roughness and Depth of Focus and also adapted to a liquid immersion process with a line width of ≤45 nm, and to provide a pattern forming method employing the same. SOLUTION: An actinic ray-sensitive or radiation-sensitive resin composition includes: (PA) a compound having a proton acceptor functional group and undergoing decomposition upon irradiation with an actinic ray or radiation to generate a compound reduced in or deprived of proton acceptor property or changed to be acidic from being proton acceptor-functioning, wherein a molar extinction coefficient ε of the compound (PA) at a wavelength of 193 nm as measured in acetonitrile solvent is 55,000 or less. The pattern forming method uses the composition. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray- or radiation-sensitive resin composition which ensures high resolution, high sensitivity and good line edge roughness, and a pattern forming method using the same. SOLUTION: A resin (P) in the actinic ray- or radiation-sensitive resin composition comprises a repeating unit (A) which generates an acid in a side chain upon irradiation with actinic rays or radiation and a repeating unit (C) having an alkali-soluble group. The resin (P) has a plurality of aromatic ring structures which may contain a heteroatom and has a structural moiety (X) in which the plurality of aromatic ring structures are condensed or coupled together by a single bond. The pattern forming method using the composition is also provided. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an active light sensitive or radiation sensitive resin composition which has high resolution, high sensitivity, and good line edge roughness and is hardly affected by variations of an exposure, and a pattern forming method using the same. SOLUTION: The active light sensitive or radiation sensitive resin composition includes a resin (P) containing a recurring unit (a) having such a structure as to generate an acid anion in a side chain of the resin by irradiation of active light or radiation, a recurring unit (b) having a protected phenolic hydroxyl, and a recurring unit (x) having a group which is decomposed by action of an alkali developer to increase the dissolution rate in the alkali developer. The pattern forming method uses this resin composition. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a composite material which enables mixing even when a broad range of matrix materials is used and excels in transparency and low thermal expansibility. SOLUTION: A composition comprises an organic crystal having a minor axis length of 3-100 nm and a major axis length of 10-2,000 nm and a matrix material, and the organic crystal may contain a surface active agent adsorbed, or an inorganic element such as silicon, titanium, aluminum, phosphorus, zirconium, and barium, or an organic group represented by the formula: -(L 1 ) n -R 1 (wherein L 1 is -O-, -CO-, -COO- or the like; n is 0-4; and R 1 is an organic group). COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an active ray-sensitive or radiation-sensitive resin composition capable of inhibiting pattern collapses within an ultrafine region (e.g., region of line width=50 nm or less) and of improving the margin of focus (DOF: Depth of Focus); a resist film using the composition; a pattern formation method; a method for manufacturing an electronic device; and an electronic device.SOLUTION: The provided active ray-sensitive or radiation-sensitive resin composition includes: (A) a resin possessing repeating units including groups generating polar groups as a result of the decomposition thereof based on the function of an acid; (B) a compound generating an acid as a result of the irradiation thereof with active rays or radiations; and (F) a compound expressed by the following general formula (1): in the general formula (1), X expresses: an organic group including at least one type selected from the group consisting of amino groups, nitrogen-containing heterocyclic groups, epoxy groups, methacryloyl groups, vinyl groups, and mercapto groups; alkyl group; cycloalkyl group; aryl group; or alkoxy group; n is an integer of 0 to 3).
Abstract:
PROBLEM TO BE SOLVED: To provide a pattern forming method and a resist composition from which a pattern having fewer development defects can be formed.SOLUTION: The resist composition is used for a specified pattern forming method and comprises the following resin, a hydrophobic resin having a fluorine atom or a silicon atom, and a solvent comprising a specified component. The resin contains a repeating unit (P) having a group that is decomposed by an action of an acid to generate an alcoholic hydroxyl group, contains neither a fluorine atom nor a silicon atom, and shows decrease in the solubility with a developing solution containing an organic solvent by an action of an acid; and in the resin, the repeating unit (P) contains no lactone structure, and the group that is decomposed by an action of an acid to generate an alcoholic hydroxyl group is a group expressed by at least one of specified general formulae. The compounding rate of the resin showing decrease in the solubility with a developing solution containing an organic solvent by an action of an acid is 60 to 95 mass% in the total solid content.
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition satisfying all demands for reducing pattern collapse, improving exposure latitude and pattern roughness characteristics such as LWR (line width roughness), and achieving excellent stability with time, and to provide a resist film and a pattern forming method using the composition, and a method for manufacturing an electronic device and an electronic device.SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition includes a compound expressed by general formula (1). In the formula, Rrepresents a polycyclic aromatic group or a polycyclic heterocyclic aromatic group; Q represents a connecting group including a heteroatom; n and m each independently represent an integer of 0 to 12, and when n is 2 or more, Rmay be the same or different from each other or a plurality of Rmay be connected to each other to form a non-aromatic ring together with R, and when m is 2 or more, Rmay be the same or different from each other or the plurality of Rmay be connected to each other to form a non-aromatic ring together with R; and Xrepresents a non-nucleophilic anion.