公开(公告)号：DE1208819B

公开(公告)日：1966-01-13

申请号：DEJ0021977

申请日：1962-06-22

Applicant: IBM

Inventor： MARINACE JOHN C ,  RUTZ RICHARD F

IPC: H01L21/00 ,  H01L21/24 ,  H01L29/00 ,  H01L29/167 ,  H01L29/36 ,  H01L29/88

Abstract: 980,338. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. May 30, 1962 [June 23, 1961], No. 20755/62. Heading H1K. A semi-conductor tunnelling device comprises a PN junction wherein the doping level of one of the conductivity type determining impurities is very heavily degenerate, and wherein the doping level of the other conductivity type determining impurity is greater than degeneracy. As shown, Fig. 4, the Fermi level lies well within the valence band of the very heavily doped P-type material, the very heavy doping of which also makes the upper edge of this band diffuse. The usual turn-over portion A of the characteristic, Fig. 1, occurs when the applied voltage is such that the Fermi level coincides with the upper edge of the valence band, and if this edge is diffuse then the turnover is not sharp and has a plateau A-B giving a substantially constant current over a range of applied voltage. In the embodiments described the doping of the P-material is about 100 times that which would normally produce degeneracy and the doping of the n-material is about 5 times that which would produce dedegeneracy. In one embodiment a bulk region of germanium doped with 2-8 x 10 20 atoms of gallium/c.c., has alloyed thereto a tin dot doped with arsenic, the latter diffusing into the bulk germanium to produce doping to the extent of 2-3 x 10 19 atoms of arsenic/c.c. and a barrier layer of less than 150 Š width. In another embodiment a germanium body doped with 2-3 x 10 19 atoms of arsenic/c.c. has an aluminium or aluminium-boron dot alloyed thereto to produce doping of 2-8 x 10 20 atoms of aluminium/c.c.

公开(公告)号：CA596807A

公开(公告)日：1960-04-26

申请号：CA596807D

Applicant: IBM

Inventor： RUTZ RICHARD F