公开(公告)号：US07723248B2

公开(公告)日：2010-05-25

申请号：US10595577

申请日：2004-10-22

Applicant: Tomoyuki Ueno ,  Masashi Yoshimura

Inventor： Tomoyuki Ueno ,  Masashi Yoshimura

IPC: C04B35/52 ,  C04B35/00

CPC classification number: C04B35/645 ,  B82Y30/00 ,  C04B35/117 ,  C04B35/185 ,  C04B35/443 ,  C04B35/486 ,  C04B35/488 ,  C04B35/52 ,  C04B35/522 ,  C04B35/524 ,  C04B35/528 ,  C04B35/565 ,  C04B35/575 ,  C04B35/581 ,  C04B35/584 ,  C04B35/593 ,  C04B35/597 ,  C04B35/6261 ,  C04B35/6303 ,  C04B35/80 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3246 ,  C04B2235/3256 ,  C04B2235/3463 ,  C04B2235/3826 ,  C04B2235/3839 ,  C04B2235/3843 ,  C04B2235/3847 ,  C04B2235/3856 ,  C04B2235/3865 ,  C04B2235/3869 ,  C04B2235/3873 ,  C04B2235/3886 ,  C04B2235/404 ,  C04B2235/422 ,  C04B2235/424 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/5248 ,  C04B2235/5288 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/767 ,  C04B2235/77 ,  C04B2235/781 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/963

Abstract: Highly wear-resistant, low-friction ceramic composites suited for machining-tool, sliding-component, and mold-die materials are made available. The ceramic composites characterized are constituted from a phase having carbon of 3 μm or less, preferably 30 nm or less, average crystal-grain size as the principal component, and a ceramic phase (with the proviso that carbon is excluded). The ceramic phase is at least one selected from the group made up of nitrides, carbides, oxides, composite nitrides, composite carbides, composite oxides, carbonitrides, oxynitrides, oxycarbonitrides, and oxycarbides of Al, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ceramic composites are produced by sintering the source-material powders at a sintering temperature of 800 to 1500° C. and a sintering pressure of 200 MPa or greater.

Abstract translation: 提供了适用于加工工具，滑动部件和模具模具材料的高度耐磨，低摩擦的陶瓷复合材料。 表征的陶瓷复合体由碳为3μm以下，优选为30nm以下，平均结晶粒径为主要成分的相和陶瓷相（条件是不排除碳）构成。 陶瓷相是选自由氮化物，碳化物，氧化物，复合氮化物，复合碳化物，复合氧化物，碳氮化物，氮氧化物，碳氮氧化物和Al，Si，Ti，Zr，Hf，V， Nb，Ta，Cr，Mo和W.通过在800〜1500℃的烧结温度和200MPa以上的烧结压力下烧结源材料粉末来制造陶瓷复合体。

公开(公告)号：US20100025869A1

公开(公告)日：2010-02-04

申请号：US12519312

申请日：2007-09-14

Applicant: Mitsunobu Suzuishi ,  Akihiro Saito ,  Hiroaki Usami ,  Hiroyuki Hirama ,  Ichiro Iibuchi ,  Toshiharu Igarashi ,  Masashi Yoshimura

Inventor： Mitsunobu Suzuishi ,  Akihiro Saito ,  Hiroaki Usami ,  Hiroyuki Hirama ,  Ichiro Iibuchi ,  Toshiharu Igarashi ,  Masashi Yoshimura

IPC: B29D11/00 ,  B29C45/72 ,  B29C45/03

CPC classification number: B29C45/0025 ,  B29C45/2669 ,  B29C45/42 ,  B29C2045/0086 ,  B29K2083/00 ,  B29K2101/10 ,  B29L2011/0016

Abstract: There is provided a method of manufacturing a molded article formed with a thermosetting resin and an injection molding apparatus so that occurrence of blurs and containing of bubbles at the time of molding can be prevented. Provided is a method of manufacturing a molded article formed with a thermosetting resin by using a mold including: a cavity for molding a product part; a gate which commutes with the cavity to guide a liquid thermosetting resin into the cavity, thereby forming a gate part; a runner which commutes with the gate part to guide the liquid resin into the gate part, thereby forming a runner part; and an overflow catcher which commutes with the cavity to receive the liquid resin overflown from the cavity, thereby forming an overflow part, wherein the method includes: an injecting process of injecting the liquid resin from the runner through the gate to the cavity, until the overflow catcher is filled from the cavity; a hardening process of heating the liquid resin in the mold, thereby hardening the liquid resin; a demolding process of demolding a resin molded article having the runner part, the gate part, the product part, and the overflow part from the mold; and a cutting process of detaching the gate part and the overflow part from the product part of the demolded resin molded article.

Abstract translation: 提供一种制造由热固性树脂和注射成型设备形成的模制品的方法，从而可以防止在模制时出现模糊和含有气泡。 提供一种通过使用模具制造由热固性树脂形成的模制品的方法，所述模具包括：用于模制产品部件的空腔; 与空腔通过的门，用于将液体热固性树脂引导到空腔中，由此形成栅极部分; 与浇口部分通过以将液体树脂引导到浇口部分中的流道，从而形成流道部分; 以及溢流捕获器，其与腔体通过以接收从腔体溢出的液体树脂，从而形成溢流部分，其中所述方法包括：将来自流道的液体树脂通过浇口喷射到空腔的注入过程，直到 溢流捕获器从腔体填充; 加热模具中的液态树脂的硬化过程，从而硬化液态树脂; 从模具脱模具有流道部，浇口部，产品部和溢流部的树脂成型体的脱模工序; 以及从脱模树脂模制品的产品部分分离浇口部分和溢流部分的切割过程。

公开(公告)号：US20070101931A1

公开(公告)日：2007-05-10

申请号：US11590930

申请日：2006-11-01

Applicant: Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

Inventor： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B25/00 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406

Abstract: The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.

Abstract translation: 本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。 待生长半导体晶体的基板的至少一部分由助熔剂材料形成。 半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。 或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。 助熔剂材料由硅形成。 或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

公开(公告)号：US20060169197A1

公开(公告)日：2006-08-03

申请号：US10549494

申请日：2004-03-15

Applicant: Takatamo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Hidekazu Umeda

Inventor： Takatamo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Hidekazu Umeda

IPC: H01L21/322

CPC classification number: C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

Abstract: A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and feeding nitrogen-containing gas into the reaction vessel and thereby allowing the Group III element and nitrogen to react with each other in the flux to grow Group-III-element nitride single crystals, wherein the single crystals are grown, with the flux being stirred by rocking the reaction vessel, for instance.

Abstract translation: 提供了一种制备方法，其中可以以高产率生产具有较低位错密度和均匀厚度并且是透明，高质量，大体积晶体的III族元素氮化物单晶。 制备III族元素的氮化物单晶的方法包括：加热含有选自碱金属和碱土金属中的至少一种金属元素的反应容器和选自碱金属和碱土金属的至少一种III族元素 由镓（Ga），铝（Al）和铟（In）组成，以制备金属元素的焊剂; 并将含氮气体进料到反应容器中，从而允许III族元素和氮气在助熔剂中彼此反应，生长组分III族元素氮化物单晶，其中单晶生长，助熔剂被搅拌 通过摇动反应容器。

公开(公告)号：US07029528B2

公开(公告)日：2006-04-18

申请号：US10469987

申请日：2002-03-15

Applicant: Hideomi Koinuma ,  Yuji Matsumoto ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

Inventor： Hideomi Koinuma ,  Yuji Matsumoto ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC: C30B29/22

CPC classification number: G02F1/37 ,  C30B29/22 ,  C30B33/10 ,  G02F1/3551 ,  G02F2001/3509

Abstract: There are provided a method of superflattening an oxide crystal that is soluble neither with acid nor with alkaline, a method of making a ReCa4O(BO3)3 family oxide single crystal thin film using the superflattening method, a ReCa4O(BO3)3 family oxide single crystal thin film having a SHG property, a superflattening method for light incident/emitting surfaces, and a defect assessing method for oxide crystals. The surface of an oxide crystal that is soluble neither with acid nor with alkaline is reduced with a reducing agent, the reduced oxide crystal surface is dissolved with an aqueous solution of acid or alkaline, the surface dissolved oxide crystal is heat-treated in the atmosphere, whereby the surface of an oxide crystal that is soluble neither with acid nor with alkaline is superflattened to an atomic level. According to this method, a chemically stable oxide which because of its complexity in both composition and structure is soluble neither with acid nor with alkaline and is insoluble even with a fluoric acid is allowed by reduction to be converted into a simpler oxide conventionally soluble with hydrochloric, nitric or sulfuric acid; hence a surface of its crystal is rendered capable of dissolving. Then, heat-treating the dissolved surface in the atmosphere at a suitable temperature for a suitable time period allows surface atoms to be rearranged and the surface to be superflattened to an atomic level. The present invention is applicable to the technical fields that require ultraviolet laser light, especially as core technologies of optical devices applied to optical information processing, optical communication or the like.

Abstract translation: 提供了一种对既不具有酸也不与碱性溶解的氧化物晶体进行超平坦化的方法，制备ReCa 4 O（BO 3 3）3的方法 使用超平坦化方法的ReCa 4 O 3（3-3）3族氧化物单晶薄膜 具有SHG特性的膜，用于光入射/发射表面的超平面方法，以及氧化物晶体的缺陷评估方法。 用还原剂还原不溶于酸和碱的氧化物晶体的表面，还原的氧化物晶体表面用酸或碱的水溶液溶解，表面溶解的氧化物晶体在大气中进行热处理 由此，不仅酸和碱也不溶解的氧化物晶体的表面被超级原子化。 根据该方法，化学稳定的氧化物由于其组成和结构的复杂性既不溶于酸也不溶于碱，并且即使用氟酸也不溶于还原，可以转化为常规可溶于盐酸的简单氧化物 ，硝酸或硫酸; 因此其晶体的表面能够溶解。 然后，在合适的温度下对溶解在大气中的表面进行适当的时间周期处理，使得表面原子被重新排列并将表面超平坦化到原子水平。 本发明适用于需要紫外线激光的技术领域，特别是作为光学信息处理，光通信等的光学装置的核心技术。

公开(公告)号：US20060051942A1

公开(公告)日：2006-03-09

申请号：US10522488

申请日：2003-06-30

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Kunimichi Omae ,  Tomoya Iwahashi ,  Masanori Morishita

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Kunimichi Omae ,  Tomoya Iwahashi ,  Masanori Morishita

IPC: H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC classification number: C30B19/02 ,  C30B9/10 ,  C30B9/12 ,  C30B29/403

Abstract: A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.

公开(公告)号：US20050254118A1

公开(公告)日：2005-11-17

申请号：US11169668

申请日：2005-06-30

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Zhang-Gui Hu

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Zhang-Gui Hu

IPC: G02F1/355 ,  G02F1/35 ,  H01S3/10

CPC classification number: G02F1/3551

Abstract: There is provided a nonlinear optical crystal which is presented by the formula: K2Al2B2O7. This nonlinear optical crystal is a vacuum ultraviolet light generating nonlinear optical crystal which is easy to grow and of high practical use. There are also provided a wavelength conversion method using this crystal, and an element and a wavelength conversion apparatus for use in the method.

Abstract translation: 提供了一种非线性光学晶体，其由下列公式表示：K 2 2 Al 2 B 2 N 2 O 7 。 这种非线性光学晶体是一种容易生长和高实用性的真空紫外线发生非线性光学晶体。 还提供了使用该晶体的波长转换方法以及用于该方法的元件和波长转换装置。

公开(公告)号：US20050241568A1

公开(公告)日：2005-11-03

申请号：US10525809

申请日：2003-08-25

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Hiroaki Adachi ,  Hiroshi Masuhara ,  Youichiroh Hosokawa ,  Kazufumi Takano

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Hiroaki Adachi ,  Hiroshi Masuhara ,  Youichiroh Hosokawa ,  Kazufumi Takano

IPC: C30B7/00 ,  C30B9/00

CPC classification number: C30B7/00 ,  C30B29/58 ,  Y10S117/904

Abstract: The present invention relates to a process for producing high-quality crystals of protein or organic substances easily and efficiently. A solution of protein or an organic substance is prepared and then is cooled slowly to be supersaturated to a low degree. This supersaturated solution is irradiated with a femtosecond laser 10. A local explosion phenomenon occurs at the focal point of the laser and thereby a crystalline nucleus is generated. A high-quality crystal is obtained when a crystal is grown on the crystalline nucleus over a long period of time. The femtosecond laser to be used herein can be a titanium:sapphire laser having a wavelength of 800 nm, a duration of 120 fs, a frequency of 1 kHz, and an output of 400 mW.

Abstract translation: 本发明涉及容易高效地生产蛋白质或有机物质的优质晶体的方法。 制备蛋白质或有机物质的溶液，然后缓慢冷却至低饱和度。 用飞秒激光10照射该过饱和溶液。 在激光的焦点发生局部爆炸现象，从而产生晶核。 当晶体长时间在晶核上生长时，获得高质量的晶体。 本文使用的飞秒激光可以是波长为800nm，持续时间为120fs，频率为1kHz，输出为400mW的钛：蓝宝石激光。

公开(公告)号：US20050164865A1

公开(公告)日：2005-07-28

申请号：US11031994

申请日：2005-01-11

Applicant: Masashi Yoshimura

Inventor： Masashi Yoshimura

IPC: C04B35/583 ,  C04B35/584 ,  C04B35/591 ,  C04B35/593 ,  C04B35/594 ,  C04B35/596

CPC classification number: C04B35/58071 ,  B82Y30/00 ,  C04B35/58014 ,  C04B35/58064 ,  C04B35/583 ,  C04B35/584 ,  C04B35/587 ,  C04B35/591 ,  C04B35/593 ,  C04B35/62615 ,  C04B35/62842 ,  C04B35/6303 ,  C04B35/64 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3804 ,  C04B2235/3813 ,  C04B2235/3826 ,  C04B2235/3843 ,  C04B2235/3856 ,  C04B2235/386 ,  C04B2235/3873 ,  C04B2235/3886 ,  C04B2235/404 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/46 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/549 ,  C04B2235/666 ,  C04B2235/781 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/96

Abstract: The present invention provides a silicon nitride-based sintered body having excellent mechanical properties from room temperature to a medium-low temperature range, a low friction coefficient and excellent wear resistance; a raw material powder for the sintered body; a method of producing the raw material powder; and a method of producing the sintered body. The sintered body of the present invention comprises silicon nitride, titanium compounds and boron nitride, or else silicon nitride, a titanium-based nitride and/or carbide, silicon carbide and graphite and/or carbon; and it has a mean particle diameter of 100 nm or less, and a friction coefficient under lubricant-free conditions of 0.3 or less, or else 0.2 or less. The silicon nitride-based composite powder, which is the raw material of the sintered body comprises primary particles of each of silicon nitride and titanium compounds, containing boron or carbon, each having a mean particle diameter of 20 nm or less, or 30 nm or less, and a phase containing an amorphous phase that surrounds the surfaces of the primary particles. Moreover, the method of producing the sintered body comprises pulverizing and mixing a silicon nitride powder, a sintering aid powder, a metallic titanium powder and a boron nitride powder, or else a silicon nitride powder, a sintering aid powder, a metallic titanium powder and a graphite and/or carbon powder, until the mean particle diameters become 20 nm or less, or else 30 nm or less, thus forming secondary

Abstract translation: 本发明提供一种氮化硅类烧结体，其具有从室温至中低温范围的优异的机械性能，低摩擦系数和优异的耐磨性; 用于烧结体的原料粉末; 一种生产原料粉末的方法; 和烧结体的制造方法。 本发明的烧结体包括氮化硅，钛化合物和氮化硼，或氮化硅，钛基氮化物和/或碳化物，碳化硅和石墨和/或碳; 平均粒径为100nm以下，无润滑条件下的摩擦系数为0.3以下，或0.2以下。 作为烧结体的原料的氮化硅系复合粉末包含平均粒径为20nm以下或30nm以下的硼或碳的氮化硅和钛化合物的一次粒子， 以及包含包围一次颗粒表面的非晶相的相。 此外，制造烧结体的方法包括将氮化硅粉末，烧结助剂粉末，金属钛粉末和氮化硼粉末，或氮化硅粉末，烧结助剂粉末，金属钛粉末和 石墨和/或碳粉末，直到平均粒径变为20nm以下，或者30nm以下，从而形成二次

公开(公告)号：US06911162B2

公开(公告)日：2005-06-28

申请号：US10172013

申请日：2002-06-17

Applicant: Masashi Yoshimura

Inventor： Masashi Yoshimura

IPC: C04B35/58 ,  C04B35/584 ,  C04B35/591 ,  C04B35/626 ,  B29C67/00 ,  H05B6/00

CPC classification number: C04B35/591

Abstract: A conductive silicon nitride composite sintered body having an average grain size of 200 nm or less and whose relative roughness (Ra) after electric discharge machining is 0.6 μm or less can be obtained by grinding/mixing a silicon nitride powder and a metal powder together until the average particle size of the silicon nitride powder becomes 30 to 60 nm, and subsequently by molding and sintering. With the contexture that is characteristic of the present invention, it is possible to obtain a conductive silicon nitride composite sintered body having electric conductive particles of 5 to 60 volume percent that is capable of electric discharge machining.

Abstract translation: 通过将氮化硅粉末和金属粉末一起研磨/混合，可以获得平均粒径为200nm以下，并且其放电加工后的相对粗糙度（Ra）为0.6μm以下的导电性氮化硅复合烧结体，直到 氮化硅粉末的平均粒径为30〜60nm，随后通过模压和烧结。 通过本发明的特征，可以获得具有能够进行放电加工的5〜60体积％的导电性粒子的导电性氮化硅复合烧结体。