Abstract:
The invention relates to an optoelectronic component comprising a carrier body (3) having a connection area (5). A semiconductor chip (7) is disposed on the carrier body (3). A contact area (10) is applied to the surface (8) of the semiconductor chip (7) facing away from the carrier body (3). The connection area (5) is electrically conductively connected to the contact region (10) by means of a self-supporting conductor structure (13). The invention relates to a method for producing an optoelectronic component.
Abstract:
The invention relates to an optoelectronic device for emitting mixed light comprising light in a first and a second wavelength range. Said device comprises in particular a first semiconductor light source (1) with a first light-emitting diode (11), which during operation emits light in the first wavelength range with a first intensity, a second semiconductor light source (2) with a second light-emitting diode (21), which during operation emits light in the second wavelength range with a second intensity, the first and the second wavelength ranges being different from one another, and a resistance element (3) comprising a temperature-dependent electric resistor. The first wavelength range and/or the first intensity of the light emitted by the first semiconductor light source (1) has or have a first temperature dependence and the second wavelength range and/or the second intensity of the light emitted by the second semiconductor light source (2) has or have a second temperature dependence that differs from the first temperature dependence, the resistance element (3) and the first semiconductor light source (1) form a series circuit (4) and the series circuit (4) and the second semiconductor light source (2) form a parallel circuit (5).
Abstract:
A semiconductor chip is specified, comprising an active layer (2) provided for emitting an electromagnetic radiation, and a two-dimensional arrangement of structure units (5), which is disposed downstream of the active layer in a main emission direction (6) of the semiconductor chip. The structure units (5) are arranged in an arbitrary statistical distribution. A semiconductor chip having a directional emission characteristic can be realized by means of such an arrangement of structure units.
Abstract:
The invention relates to an LED semiconductor body (1) comprising at least one first radiation-generating active layer (31), at least one second radiation-generating active layer (32), and a photonic crystal (6). The invention also relates to the use of such an LED semiconductor body (1).