公开(公告)号：WO2010144848A2

公开(公告)日：2010-12-16

申请号：PCT/US2010038383

申请日：2010-06-11

Applicant: QUALCOMM INC ,  GU SHIQUN ,  CHANDRASEKARAN ARVIND ,  RAY URMI ,  LI YIMING

Inventor： GU SHIQUN ,  CHANDRASEKARAN ARVIND ,  RAY URMI ,  LI YIMING

IPC: H01L23/00

CPC classification number: H01L25/0657 ,  H01L21/76898 ,  H01L23/562 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/0401

Abstract: A semiconductor component (such as a semiconductor wafer or semiconductor die) includes a substrate having a front side and a back side. The semiconductor die/wafer also includes a stress balance layer on the back side of the substrate. An active layer deposited on the front side of the substrate creates an unbalanced stress in the semiconductor wafer/die. The stress balance layer balances stress in the semiconductor wafer/die. The stress in the stress balance layer approximately equals the stress in the active layer. Balancing stress in the semiconductor component prevents warpage of the semiconductor wafer/die.

Abstract translation: 半导体元件（例如半导体晶片或半导体晶片）包括具有正面和背面的基板。 半导体管芯/晶片还包括在衬底的背面上的应力平衡层。 沉积在基板的正面上的有源层在半导体晶片/管芯中产生不平衡的应力。 应力平衡层平衡半导体晶片/模具中的应力。 应力平衡层中的应力大致等于有源层中的应力。 在半导体部件中平衡应力可以防止半导体晶片/裸片翘曲。

公开(公告)号：WO2010062946A2

公开(公告)日：2010-06-03

申请号：PCT/US2009065898

申请日：2009-11-25

Applicant: QUALCOMM INC ,  CHANDRASEKARAN ARVIND ,  KASKOUN KENNETH ,  GU SHIQUN

Inventor： CHANDRASEKARAN ARVIND ,  KASKOUN KENNETH ,  GU SHIQUN

IPC: H04W72/12

CPC classification number: H01Q1/2283 ,  G06K19/07775 ,  G06K19/07779 ,  H01L23/481 ,  H01L23/585 ,  H01L23/645 ,  H01L23/66 ,  H01L25/0657 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/19015 ,  H01Q7/00 ,  Y10T29/49016 ,  H01L2924/00

Abstract: An antenna structure is integrated in a semiconductor chip. The antenna structure is formed by at least one of: a) one or more through-silicon vias (TSVs), and b) one or more crack stop structures. In certain embodiments, the antenna structure includes an antenna element formed by the TSVs. The antenna structure may further include a directional element formed by the crack stop structure. In certain other embodiments, the antenna structure includes an antenna element formed by the crack stop structure, and the antenna structure may further include a directional element formed by the TSVs.

Abstract translation: 天线结构集成在半导体芯片中。 天线结构由以下至少一种形成：a）一个或多个穿硅通孔（TSV），以及b）一个或多个裂纹停止结构。 在某些实施例中，天线结构包括由TSV形成的天线元件。 天线结构还可以包括由裂纹停止结构形成的方向元件。 在某些其他实施例中，天线结构包括由裂缝停止结构形成的天线元件，并且天线结构还可以包括由TSV形成的定向元件。

公开(公告)号：WO2010011448A3

公开(公告)日：2010-04-01

申请号：PCT/US2009047668

申请日：2009-06-17

Applicant: QUALCOMM INC ,  LI XIA ,  ZHAO WEI ,  CAO YU ,  GU SHIQUN ,  KANG SEUNG H ,  NOWAK MATTHEW

Inventor： LI XIA ,  ZHAO WEI ,  CAO YU ,  GU SHIQUN ,  KANG SEUNG H ,  NOWAK MATTHEW

IPC: G06F17/50

CPC classification number: G06F17/5036

Abstract: A computer program product estimates performance of an interconnect structure of a semiconductor integrated circuit (IC). The program product includes code executing on a computer to calculate at least one electrical characteristic of the interconnect structure based on input data accounting for multiple layers of the interconnect structure. The electrical characteristics can be capacitance, resistance, and/or inductance. The capacitance may be based upon multiple components, including a fringe capacitance component, a terminal capacitance component, and a coupling capacitance component.

Abstract translation: 计算机程序产品估计半导体集成电路（IC）的互连结构的性能。 该程序产品包括在计算机上执行的代码，用于基于考虑互连结构的多个层的输入数据来计算互连结构的至少一个电特性。 电特性可以是电容，电阻和/或电感。 电容可以基于多个部件，包括边缘电容部件，端子电容部件和耦合电容部件。