Abstract:
PURPOSE:To make it possible to connect a semiconductor device, having a narrow electrode interval, to an outer circuit by a method wherein two or more surfaces of a semiconductor device electrode, a circuit substrate electrode and conductive particles are covered by a ferromagnetic material, and one or more of the semiconductor electrodes and the circuit substrate electrodes are magnetized and connected. CONSTITUTION:A silicon oxide film is formed on an N-type silicon substrate 1, an Al alloy 2 which is isolated at the prescribed angle and interval, the electrode of a semiconductor device on which an Ni-P layer 4 and a Co-P layer 5, having the prescribed coercive force and residual magnetic flux density, are selectively formed by a electroless plating method, and a circuit substrate, on which layers 5 are selectively formed at the prescribed interval on an insulated substrate 7 wired by copper 6, are magnetized using a magnetic field and also using an ultraviolet-ray hardening adhesive agent 9 on which conductive grains 8, whereon a Co-P layer is formed on resin grains, are dispersed. Through the above-mentioned procedures, the semiconductor device can be electrically mounted at a narrow electrode interval, and the semiconductor device and the circuit substrate can be connected even when they are a little deviated.
Abstract:
PURPOSE:To obtain stable floating of a magnetic head and to increase the magnetic recording capacity even when the space between the magnetic head and the magnetic recording medium is decreased, by interposing a nonmagnetic electroless plating layer between a nonmagnetic substrate and a ferromagnetic layer. CONSTITUTION:A ferromagnetic layer 4 having parallel or perpendicular orientation is formed on the mirror-finished surface of the nonmagnetic substrate 1, 2, with the nonmagnetic electroless plating layer 3 interposed between the nonmagnetic substrate 1, 2 and the ferromagnetic layer 4. It is preferable that the mirror-finished nonmagnetic substrate 1, 2 consists of aluminum treated with Ni-P plating, glass or a sintered body. Therefore, an uneven surface can be formed without using a mechanical method, and friction between the head and the magnetic recording medium can be reduced. Thereby, the obtd. medium gives stable floating of a magnetic head even with low floating amount, and has high recording density.
Abstract:
PURPOSE:To stabilize a plating deposition rate and to allow the stable control of magnetic film thicknesses even if many magnetic media are produced over a long period of time by incorporating a carbonate into an electroless plating liquid for forming the magnetic films of the magnetic medium to be used for a magnetic disk device. CONSTITUTION:The electroless plating liquid contg. the carbonate is used in the formation of the magnetic films of the magnetic media to be used for the magnetic disk device. This magnetic plating liquid is formed by using a cobalt salt and nickel salt for the magnetic metallic material, hypophosphite for the reducing agent and tartrate and malate for the complexing agent. Further, boric acid and carbonate are used as a pH buffer soln. The carbonate is formed by adding a prescribed amt. of sodium carbonate or potassium carbonate into the plating liquid and acts to buffer pH as well as to improve the plating rate. As a result, the plating deposition rate is stabilized and the control of the magnetic film thicknesses is possible even if the many magnetic media are produced over a long period of time.
Abstract:
PURPOSE:To prevent the decrease of bonding strength by forming a diffusion preventing metal film in the state where the active surface of a semiconductor integrated circuit is covered with resin, in an outer terminal where diffusion preventing metal capable of selective plating, and metal capable of metal bonding are laminated in order on wiring metal, formed on a semiconductor substrate or an insulative substrate. CONSTITUTION:A silicon substrate 1 having a P-N junction wherein the formation of a bonding pad is finished, photosensitive resin used in the cource of forming the pad is left, and a region except the pad is covered with an insulating film is etched by using sodium hydroxide. After that, said substrate is dipped in treating containing palladium chloride, and a palladium layer 4 is subjected to substitution plating on an aluminum layer 2. A nickel-phosphorus layer 5 is plated by electroless plating bath, and a gold layer 6 is plated by using electroless gold plating liquid. Then the photosensitive resin is exfoliated by using solvent. Thereby selective plating on a bonding pad is enabled, and the decrease of bonding strength can be prevented.
Abstract:
PURPOSE:To uniformize the lamination height of solder and prevent imperfect bonding by laminating gold and metal whose melting point is 350 deg.C or less on an outer terminal formed by selectively laminating palladium and nickel based alloy in order on wiring metal. CONSTITUTION:A semiconductor substrate 1 wherein a bonding pad has been formed is dipped in processing liquid whose main component is palladium chloride, and a palladium layer 4 is formed on an aluminum layer 2 being a bonding pad. By electroless plating bath using nickel sulfate and hypophosphite, a nickel phosphor layer 5 of 2mum in thickness is plated; by using electroless gold plating liquid, metal 6 of 0.1mum in thickness is plated. Lastly dipping is performed in the order of solder bath heated at 320 deg.C, solder bath heated at 290 deg.C, and solder bath heated at 220 deg.C, thereby laminating a solder layer 7 and forming a bump. Hence the lamination height of solder and the like can be uniformized, and the bonding quality is improved.
Abstract:
PURPOSE:To improve the reproduced output of the medium by providing a ferromagnetic material film on a substrate on which ruggedness is formed. CONSTITUTION:The ruggedness having 100-1,000Angstrom center line height (Ra) is formed on the disk-shaped nonmagnetic substrate and the ferromagnetic material film (A) is formed thereon. The above-mentioned ruggedness is preferably formed in the circumferential direction of the substrate. The film A is formed by using an electroless plating liquid contg. at least Co and P. The liquid contg. tartaric acid as a complexing agent and having 7.5-9.0pH is preferably used for the plating liquid.
Abstract:
PURPOSE:To enable the defectless electroless plating on an insulator by adding a surfactant to a sensitization treating liquid or activation treating liquid and pretreating the insulator with this liquid. CONSTITUTION:The insulator is pretreated with the sensitization treating liquid and the activation treating liquid at the time of subjecting the surface of the insulator to electroless plating. The surfactant is added to at least either of the sensitization treating liquid and the activation treating liquid. For example, polyethylene glycol, sodium lauryl sulfate, tetramethyl ammonium chloride, etc., are used for the surfactant. The defect diameter after the electroless plating is thereby diminished to about
Abstract:
PURPOSE:To improve an SN ratio and to increase a medium margin by incorporating 0.5-15wt% Mn into a Co-Ni-P alloy film constituting a magnetic recording medium. CONSTITUTION:A nonmagnetic substrate is immersed in an electroless magnetic plating bath consisting of a cobalt sulfate, nickel sulfate, sodium hypophosphite, sodium tartrate, sodium malate, ammonium sulfate, etc., and the Co-Ni-P alloy film is deposited to about 1,000Angstrom thickness on the substrate while the pH and temp. are maintained at prescribed values to provide a magnetic layer. Manganese sulfate is incorporated at 0.5-1.5wt% into the plating bath in this stage to obviate an increase of the max. value of coercive force until the film thickness attains 1,000Angstrom . The magnetic layer which has the large SN ratio and obviates the fluctuation of the coercive force is thus obtd. even if the plating bath is continuously used.
Abstract:
PROBLEM TO BE SOLVED: To provide an illumination apparatus which prevents unevenness of light emitted to a viewer side, and suppresses degradation of luminance. SOLUTION: The illumination apparatus 10 includes an organic layer 2b formed on a surface of a glass substrate 1a, and a reflection layer 9 arranged so as to be superimposed on the organic layer 2b on the surface of the glass substrate 1a in plan view, and reflecting light emitted from the organic layer 2b. The reflection layer 9 is formed in a convex shape protruding to the organic layer 2b. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an illumination device capable of suppressing that electrical resistance of an electrode becomes large. SOLUTION: This display device 100 is equipped with a substrate 12, an anode 15 composed of a single membrane formed to cover nearly the whole face of a display region 12a of the substrate 12, a cathode 18 which is superposed on the anode 15 in a plan view and composed of the single membrane formed so as to cover nearly the whole face of the display region 12a, and a plurality of insular light-emitting elements 17 which are arranged between the anode 15 and the cathode 18, and electrically connected to the anode 15 and the cathode 18. COPYRIGHT: (C)2010,JPO&INPIT