公开(公告)号：JP2008227546A

公开(公告)日：2008-09-25

申请号：JP2008161116

申请日：2008-06-20

Applicant: Sony Corp ,  Sumitomo Electric Ind Ltd ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： YANASHIMA KATSUNORI ,  KOBAYASHI TOSHIMASA ,  NAKAJIMA HIROSHI ,  MOTOKI KENSAKU

IPC: H01S5/343 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44

Abstract: PROBLEM TO BE SOLVED: To provide a fabricating method of a semiconductor element in which the semiconductor element having good characteristics, high reliability and long lifetime, is easily fabricated. SOLUTION: Seeds including an amorphous layer, etc. are regularly formed on a base substrate, a nitride based III-V compound semiconductor is grown with an inclined face composed of a facet face, dislocations are propagated by the growth with the inclined face composed of the facet face retained, the dislocations are accumulated to the seed region, the substrate is removed, and a surface of the semiconductor is planarized. Accordingly, a plurality of second regions each having an average dislocation density higher than that of a first region are regularly arranged in the first region of single-crystal to fabricate a nitride based III-V compound semiconductor substrate composed of single-crystal in which C-axis is reversed in the second region about the first region. The second region is, at least, partially removed from the major substrate by etching, or the surface of the second region is covered with a coat layer like an insulation film, etc., and thereafter a nitride based III-V compound semiconductor layer for element-formation is grown. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决的问题：为了提供容易制造半导体元件的制造方法，其中具有良好特性，高可靠性和长寿命的半导体元件。 解决方案：包括非晶层等的种子在基底基板上规则地形成，氮化物基III-V族化合物半导体由具有由小面组成的倾斜面生长，位错通过倾斜的生长而传播 由保留的面面构成的面，将位错累积到种子区域，去除衬底，并且使半导体的表面平坦化。 因此，具有平均位错密度高于第一区域的多个第二区域规则地布置在单晶的第一区域中，以制造由单晶构成的基于氮化物的III-V族化合物半导体衬底，其中C 在第二个地区，第一个地区的相反。 第二区域通过蚀刻至少部分地从主衬底上去除，或者第二区域的表面被诸如绝缘膜等的涂层覆盖，然后用氮化物基III-V化合物半导体层 元素形成生长。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007116097A

公开(公告)日：2007-05-10

申请号：JP2006215342

申请日：2006-08-08

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OMAE AKIRA ,  SHIOMI HARUNORI ,  KAZETAGAWA MUNEYUKI ,  AMI TAKAAKI ,  MIYAJIMA TAKAO ,  HIRAMATSU YUJI ,  HATADA IZUHO ,  OKANO NOBUKATA ,  TOMITANI SHIGETAKA ,  YANASHIMA KATSUNORI ,  HINO TOMOKIMI ,  NARUI HIRONOBU

IPC: H01L33/08 ,  C30B29/38 ,  H01L21/205 ,  H01L33/16 ,  H01L33/32

CPC classification number: H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting diode which emits light efficiently and which can be manufactured at low costs by a single epitaxial growth, and to provide a manufacturing method of the same. SOLUTION: A substrate 11 having a plurality of protrusions 12 is formed on one main surface of the substrate 11 such as a sapphire substrate wherein the protrusion 12 is made of a material different in type from that of the substrate, an SiO 2 film e.g., and a first nitride-based group III-V compound semiconductor layer 15 is grown on each recess 13 between the protrusions 12 until making a triangle in section wherein a bottom surface of the recess becomes a base of the triangle. Thereafter, a second nitride-based group III-V compound semiconductor layer 15 is laterally grown on the substrate from the first nitride-based group III-V compound semiconductor layer 15. The protrusions 12 are triangular or trapezoidal e.g. in section. On the second nitride-based group III-V compound semiconductor layer 15, a third nitride-based group III-V compound semiconductor layer 15 including an active layer and a nitride-based group III-V compound semiconductor layer 15 are formed. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种有效发光并且可以通过单次外延生长以低成本制造的发光二极管，并提供其制造方法。 解决方案：具有多个突起12的基板11形成在诸如蓝宝石基板的基板11的一个主表面上，其中突起12由与基板不同的材料制成， SB> 2 膜，并且在突起12之间的每个凹部13上生长第一氮化物基III-V族化合物半导体层15，直到形成三角形，其中凹部的底表面成为基底 的三角形。 此后，第二氮化物基III-V族化合物半导体层15从第一氮化物基III-V族化合物半导体层15横向生长在衬底上。突起12是三角形或梯形的。 在部分。 在第二氮化物基III-V族化合物半导体层15上，形成包括有源层和氮化物基III-V族化合物半导体层15的第三氮化物基III-V族化合物半导体层15。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007081115A

公开(公告)日：2007-03-29

申请号：JP2005266867

申请日：2005-09-14

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KURAMOCHI NAOYOSHI ,  HITSUDA YUKIHISA ,  WATABE YOSHIAKI ,  YANASHIMA KATSUNORI

IPC: H01L21/3065 ,  H01L33/32 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light emitting element which can obtain a good and stable ohmic characteristic and contact resistance, and can prevent oxidation of an electrode upon removal of a resist mask. SOLUTION: The method for manufacturing a semiconductor light emitting element comprises the steps of dry etching a group III-V nitride-based semiconductor layer 10 of a laminated structure of an n type semiconductor layer 3, a luminous layer 4, and a p type semiconductor layer 5 at a relatively low first rate, and thereafter etching the group III-V nitride-based semiconductor layer 10 at a final rate faster than the first rate. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够获得良好且稳定的欧姆特性和接触电阻的半导体发光元件的制造方法，并且可以防止在去除抗蚀剂掩模时电极的氧化。 解决方案：用于制造半导体发光元件的方法包括以下步骤：将n型半导体层3，发光层4和ap的层叠结构的III-V族氮化物基半导体层10进行干蚀刻 型半导体层5，然后以比第一速率更快的最终速率蚀刻III-V族氮化物基半导体层10。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006229241A

公开(公告)日：2006-08-31

申请号：JP2006063811

申请日：2006-03-09

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KAWAI HIROHARU ,  IKEDA MASAO ,  NAKAMURA FUMIHIKO ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI

IPC: H01L33/32 ,  C23C16/34 ,  H01L21/205 ,  H01L33/00 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To prevent deterioration of a nitride-based group III-V compound semiconductor layer, containing In and to improve the quality of the nitride-based group III-V compound semiconductor layer that does not contain In, when the nitride-based group III-V compound semiconductor layer that does not contain In is grown on the nitride-based group III-V compound semiconductor layer containing In, such as GaInN layer at a higher growth temperature than that of the latter layer. SOLUTION: A protective film composed of AlGaN is grown on the nitride-based group III-V compound semiconductor layer, containing In at a growth temperature almost equal to or lower than that of the semiconductor layer thereof, and the nitride-based III-V compound semiconductor layer that does not contain In is grown thereon. Here, N 2 is used as the carrier gas, when the nitride-based group III-V compound semiconductor layer containing In and the protecting film are grown, and a mixed gas of H 2 and N 2 is used for the carrier gas, when the nitride-based group III-V compound semiconductor layer that does not contain In is grown. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题为了防止含有In的氮化物基III-V族化合物半导体层的劣化，并且为了提高不含In的氮化物系III-V族化合物半导体层的质量，当 不含In的基于氮化物的III-V族化合物半导体层生长在含In的氮化物基III-V族化合物半导体层上，例如GaInN层，其生长温度高于后一层。 解决方案：在氮化物基III-V族化合物半导体层上生长由AlGaN组成的保护膜，其中In生长温度几乎等于或低于其半导体层的生长温度，并且氮化物基 在其上生长不含In的III-V族化合物半导体层。 这里，使用N 2 作为载气，当含有In和保护膜的氮化物基III-V族化合物半导体层生长时，H 2 < 当不含有In的氮化物基III-V族化合物半导体层生长时，使用SB / N和SBB和N 作为载气。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005029885A

公开(公告)日：2005-02-03

申请号：JP2003364084

申请日：2003-10-24

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MEMESAWA SATOHIKO ,  OMAE AKIRA ,  TOJO TAKESHI ,  YANASHIMA KATSUNORI

IPC: H05B33/10 ,  C23C14/24 ,  H01L51/50 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To deposit a film having excellent film deposition controllability and high packing density. SOLUTION: In a reactor 10 where a first organic precursory material 4 as a host material is film-deposited, a vacuum deposition method is applied. A second organic precursory material 6 as a guest material is vaporized by a vaporizer 80 and is mixed with an inert carrier gas 7 fed from a gas refiner 94, and the mixed vapor 8 is introduced into the reactor 10 through piping 87. A mass flow controller 90 is fitted onto the path of the piping 89. The amount of the second organic precursory material 6 to be introduced into the reactor 10 is controlled by the mass flow controller 90, so that the concentration control in doping is performed. The host material is deposited to a substrate W by a vacuum deposition method capable of performing high speed-high precision film deposition, and the guest material is deposited to the substrate W by an OVPD (Organic Vapor Phase Deposition) method which exhibits excellent concentration controllability. As for the host material, the advantages of the vacuum deposition method can be fully utilized, and, as for the guest material, the advantages of the OVPD method can be fully utilized. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：沉积具有优异的成膜控制性和高堆积密度的膜。 解决方案：在作为主体材料的第一有机前体材料4被膜沉积的反应器10中，应用真空沉积方法。 作为客体材料的第二有机前体材料6通过蒸发器80蒸发并与从气体精炼器94供给的惰性载气7混合，并且混合蒸汽8通过管道87引入反应器10中。质量流 控制器90安装在管道89的路径上。被引入反应器10的第二有机前体材料6的量由质量流量控制器90控制，从而进行掺杂浓度控制。 通过能够进行高速高精度的膜沉积的真空沉积法将主体材料沉积到基板W，并且通过表现出优异的浓度可控性的OVPD（有机气相沉积）方法将客体材料沉积到基板W 。 对于主体材料，可以充分利用真空沉积方法的优点，并且对于客体材料，可以充分利用OVPD方法的优点。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004262757A

公开(公告)日：2004-09-24

申请号：JP2004141170

申请日：2004-05-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  YANASHIMA KATSUNORI ,  IKEDA MASAAKI ,  SHIBUYA KATSUYOSHI ,  SUZUKI YASUHIKO

IPC: C30B29/40 ,  C30B25/04 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element having a wide low-defect region on the surface and to provide a method for producing a semiconductor element which can easily reduce surface defects in a layer formation step using a lateral growth technique. SOLUTION: A seed crystal layer 201 is grown on a substrate 100, and a growth inhibition layer 216 is formed on the layer 201. That part of the layer 201 which is exposed through the opening of the layer 201 serves as a seed crystal part 215. GaN:Si is grown on the part 215 as a base to form the second seed crystal part 217a. The growth temperature is 1,000°C at the highest. A high-temperature growth part 217b is grown on the part 217a as a base. The growth temperature is 1,050°C at the lowest. The crystal growth proceeds chiefly in the lateral direction to form a continuous unitary layer. Almost no dislocation or crystal defect exists just above the part 217a, and therefore a wide low-defect region is formed on the surface of a nitride semiconductor layer 217. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004091913A

公开(公告)日：2004-03-25

申请号：JP2002298427

申请日：2002-10-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TANAKA SADAO ,  NARUI HIRONOBU ,  YANASHIMA KATSUNORI ,  MEMESAWA SATOHIKO ,  SASAKI KOJI

IPC: H05B33/10 ,  C23C14/04 ,  C23C14/12 ,  H01L51/50 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To provide a film deposition system and a film deposition method by which a shadow effect in film deposition using a mask is prevented, and thin film deposition having a uniform film thickness can be performed in a substrate face. SOLUTION: The film deposition system 1 for depositing a film pattern on a film deposition face Wa in a substrate W is provided with a substrate holding means 13, a mask holding means holding a mask member M to a state of being confronted with the film deposition face Wa in the substrate W held thereby, and a gas feeding means 20 ejecting a film deposition gas G from the side of the mask member M held thereby onto the film deposition face Wa in the substrate W. The substrate holding means 13 holds the substrate W so that the film deposition face Wa in the substrate W is almost vertically held, and is provided with driving means relatively moving the substrate W and the mask member M to the film deposition gas G ejected from the gas feeding means 20, and a temperature control means. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004076150A

公开(公告)日：2004-03-11

申请号：JP2002293280

申请日：2002-10-07

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SASAKI KOJI ,  NARUI HIRONOBU ,  YANASHIMA KATSUNORI ,  MEMESAWA SATOHIKO

IPC: H05B33/10 ,  C23C14/12 ,  C23C14/24 ,  C23C16/455 ,  H01L51/50 ,  H05B33/14

CPC classification number: C23C14/228 ,  C23C14/12

Abstract: PROBLEM TO BE SOLVED: To provide a thin film forming system capable of supplying gaseous raw materials uniformly onto a substrate surface, thereby uniformizing the thickness of an organic thin film formed on the substrate surface.
SOLUTION: The thin film forming system is provided with a vacuum chamber 11, a substrate holder 12 disposed within the vacuum chamber 11 and a gas supply end 22 for supplying the gas toward a substrate fitting surface 12a of the substrate holder 12. The gas supply end 22 is so formed that the gaseous raw materials are supplied in a longer form to the surface 12a.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004059992A

公开(公告)日：2004-02-26

申请号：JP2002219460

申请日：2002-07-29

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SASAKI KOJI ,  NARUI HIRONOBU ,  YANASHIMA KATSUNORI ,  TANAKA SADAO ,  MEMESAWA SATOHIKO

IPC: H01L51/50 ,  C23C14/12 ,  C23C14/24 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To provide an organic thin film deposition apparatus for efficiently and uniformly controlling the temperature in a raw material vessel with an organic raw material stored therein.
SOLUTION: In this organic thin film deposition apparatus comprising a treatment chamber 11 to perform film deposition on a substrate S, a raw material gas feed pipe 21 to feed organic raw gas to the treatment chamber 11, and a raw material vessel 31 storing the organic raw material to feed the organic raw material gas to the raw material gas feed pipe 21, a plurality of heating coils 32 to heat the raw material vessel 31 by the electromagnetic induction heating are disposed so as to surround the circumference of the raw material vessel 31, and an AC current control means 34 to independently control the temperature via each heating coil 32 is provided.
COPYRIGHT: (C)2004,JPO

Abstract translation: 解决的问题：提供一种有机薄膜沉积装置，用于有效地均匀地控制原料容器中的温度，其中存储有机原料。 解决方案：在该有机薄膜沉积设备中，包括用于在基板S上进行薄膜沉积的处理室11，将有机原料气体送入处理室11的原料气体供给管21和原料容器31 储存有机原料以将有机原料气体供给到原料气体供给管21，通过电磁感应加热来加热原料容器31的多个加热线圈32被设置成围绕原料气体供给管21的周围 材料容器31和通过每个加热线圈32独立地控制温度的AC电流控制装置34。 版权所有（C）2004，JPO

公开(公告)号：JP2004043853A

公开(公告)日：2004-02-12

申请号：JP2002200778

申请日：2002-07-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YANASHIMA KATSUNORI ,  NARUI HIRONOBU ,  MEMESAWA SATOHIKO ,  SASAKI KOJI

IPC: H05B33/10 ,  C23C14/24 ,  H01L51/50 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film forming apparatus for forming an organic thin film with a uniform thickness on the surface of a substrate, and to provide a thin-film forming method. SOLUTION: The thin-film forming apparatus has a treatment chamber 11, a substrate holder 13 installed in the treatment chamber 11, a gas supply means 15 for supplying a gas G to a substrate-mounting surface 13a of the substrate holder 13, and an outlet 31 for exhausting a redundant gas G in the treatment chamber 11, wherein the outlet 31 is installed into plurality, and each outlet 31 is arranged so that the gas G supplied from the gas supply means 15 is introduced to each part of the substrate-mounting surface 13a. The thin-film forming method is characterized by using the apparatus. COPYRIGHT: (C)2004,JPO