SEMICONDUCTOR PACKAGE WITH BLAST SHIELDING

    公开(公告)号:US20220208699A1

    公开(公告)日:2022-06-30

    申请号:US17138903

    申请日:2020-12-31

    Inventor: Enis Tuncer

    Abstract: A semiconductor package includes a metallic pad and leads, a semiconductor die including a semiconductor substrate attached to the metallic pad, and a conductor including a sacrificial fuse element above the semiconductor substrate, the sacrificial fuse element being electrically coupled between one of the leads and at least one terminal of the semiconductor die, a shock-absorbing material over a profile of the sacrificial fuse element, and mold compound covering the semiconductor die, the conductor, and the shock-absorbing material, and partially covering the metallic pad and leads, with the metallic pad and the leads exposed on an outer surface of the semiconductor package. Either a glass transition temperature of the shock-absorbing material or a melting point of the shock-absorbing material is lower than a melting point of the conductor.

    OPTICAL SENSOR PACKAGE WITH OPTICALLY TRANSPARENT MOLD COMPOUND

    公开(公告)号:US20220140154A1

    公开(公告)日:2022-05-05

    申请号:US17088963

    申请日:2020-11-04

    Inventor: Enis Tuncer

    Abstract: An optical sensor package includes an IC die including a light sensor element, an output node, and bond pads including a bond pad coupled to the output node. A leadframe includes a plurality of leads or lead terminals, wherein at least some of the plurality of leads or lead terminals are coupled to the bond pads including to the bond pad coupled to the output node. A mold compound provides encapsulation for the optical sensor package including for the light sensor element. The mold compound includes a polymer-base material having filler particles including at least one of infrared or terahertz transparent particle composition provided in a sufficient concentration so that the mold compound is optically transparent for providing an optical transparency of at least 50% for a minimum mold thickness of 500 μm in a portion of at least one of an infrared frequency range and a terahertz frequency range.

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