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    Pattern inspection system
    61.
    发明授权
    Pattern inspection system 失效
    图案检查系统

    公开(公告)号：US4547895A

    公开(公告)日：1985-10-15

    申请号：US428605

    申请日：1982-09-30

    Applicant: Kikuo Mita ,  Masayuki Oyama ,  Takashi Yoshida ,  Masato Nakashima ,  Katsumi Fujihara ,  Tadao Nakakuki

    Inventor： Kikuo Mita ,  Masayuki Oyama ,  Takashi Yoshida ,  Masato Nakashima ,  Katsumi Fujihara ,  Tadao Nakakuki

    IPC: G01B11/02 ,  G06K9/54 ,  G06T7/60 ,  G06K9/00

    CPC classification number: G01B11/024 ,  G06K9/54 ,  G06T7/60

    Abstract: A pattern inspection system for inspecting a pattern formed on a base, such as a photomask, by means of laser beam scanning which includes a device for detecting the body and edges of the pattern, a memory device having a plurality of memory units for separately storing the detected body and plurality of edges of the pattern, a device for measuring the width of the body of the pattern between two parallel edges of the pattern, a device for detecting and correcting missing pattern edges, a device for inverting the pattern, a device for reducing the pattern, and a device for eliminating pinholes and stains within the pattern.

    Abstract translation: 一种图案检查系统，用于通过激光束扫描检查形成在诸如光掩模的基座上的图案的图案检查系统，其包括用于检测图案的主体和边缘的装置;存储装置，具有多个存储单元，用于分开存储 图案的检测体和多个边缘，用于测量图案的两个平行边缘之间的图案的主体的宽度的装置，用于检测和校正缺失图案边缘的装置，用于反转图案的装置，装置 用于减少图案，以及用于消除图案内的针孔和污渍的装置。

    Cephalosporin compounds
    62.
    发明授权
    Cephalosporin compounds 失效
    头孢菌素化合物

    公开(公告)号：US4393058A

    公开(公告)日：1983-07-12

    申请号：US188417

    申请日：1980-09-18

    Applicant: Osamu Makabe ,  Yasushi Murai ,  Tuneo Okonogi ,  Masahiro Onodera ,  Yoshiyuki Koyama ,  Takashi Yoshida

    Inventor： Osamu Makabe ,  Yasushi Murai ,  Tuneo Okonogi ,  Masahiro Onodera ,  Yoshiyuki Koyama ,  Takashi Yoshida

    IPC: A61K31/545 ,  A61K31/546 ,  A61P31/04 ,  C07C45/71 ,  C07D213/80 ,  C07D213/82 ,  C07D213/85 ,  C07D501/36

    CPC classification number: C07D213/80 ,  C07C45/71 ,  C07D213/82 ,  C07D213/85

    Abstract: Cephalosporin compounds, intermediate compounds therefor, and processes for preparation thereof are described; the compounds have the formula (I) ##STR1## wherein R.sub.1 and R.sub.2 can each represent hydrogen, a hydroxyl group, a lower alkoxy group, or a substituted or unsubstituted phenylalkoxy group; R.sub.3 represents hydrogen or a lower alkyl group; R.sub.4 represents hydrogen or a hydroxyl group; and R.sub.5 represents ##STR2## wherein R.sub.6 is hydrogen, a lower alkyl group, an aminoalkyl group, an aminoaralkyl group, a --(CH.sub.2).sub.n --SO.sub.3 Na group, or a --(CH.sub.2).sub.n --COR.sub.9 group [wherein R.sub.9 is a hydroxyl group, an OM group (wherein M is an alkali metal), an alkoxy group, or an ##STR3## group, (wherein R.sub.10 and R.sub.11, which may be the same or different, can represent hydrogen or an alkyl group), and n is 0 or an integer of from 1 to 4]; R.sub.7 is hydrogen, a lower alkyl group, an amino group, or a substituted or unsubstituted aryl group; and R.sub.8 represents hydrogen or a lower alkyl group; or, a pharmaceutically acceptable salt thereof.

    Abstract translation: 描述头孢菌素化合物，其中间体化合物及其制备方法; 化合物具有式（I）其中R 1和R 2各自表示氢，羟基，低级烷氧基或取代或未取代的苯基烷氧基; R3表示氢或低级烷基; R4代表氢或羟基; 其中R6为氢，低级烷基，氨基烷基，氨基烷基， - （CH2）n-SO3Na基或 - （CH2）n-COR9基[ 其中R 9为羟基，OM基（其中M为碱金属），烷氧基或基团（其中R10和R11可以相同或不同，表示氢或烷基 组），n为0或1〜4的整数]。 R7是氢，低级烷基，氨基或取代或未取代的芳基; R8代表氢或低级烷基; 或其药学上可接受的盐。

    Pattern inspection system
    63.
    发明授权
    Pattern inspection system 失效
    图案检查系统

    公开(公告)号：US4392120A

    公开(公告)日：1983-07-05

    申请号：US197345

    申请日：1980-06-23

    Applicant: Kikuo Mita ,  Masayuki Oyama ,  Takashi Yoshida ,  Masato Nakashima ,  Katsumi Fujihara ,  Tadao Nakakuki

    Inventor： Kikuo Mita ,  Masayuki Oyama ,  Takashi Yoshida ,  Masato Nakashima ,  Katsumi Fujihara ,  Tadao Nakakuki

    IPC: G01B11/02 ,  G06K9/54 ,  G06T7/60 ,  G06K9/00

    CPC classification number: G06T7/60 ,  G01B11/024 ,  G06K9/54 ,  G06T2207/30108

    Abstract: A pattern inspection system, for inspecting a pattern formed on a base, such as a photo-mask, by means of laser beam scanning, which includes a device for detecting the body and edges of the pattern a memory device having a plurality of memory units for separately storing the detected body and plurality of edges of the pattern, a device for measuring the width of the body of the pattern between two parallel edges of the pattern, a device for detecting and correcting missing pattern edges, a device for inverting the pattern, a device for reducing the pattern and a device for eliminating pinholes and stains within a pattern.

    Abstract translation: PCT No.PCT / JP79 / 00271 Sec。 371日期1980年6月30日第 102（e）1980年6月23日PCT提交1979年10月25日PCT公布。 公开号WO80 / 01002 日期：1980年5月15日。一种图案检查系统，用于通过激光束扫描来检查形成在基底上的图案（例如光掩膜），其包括用于检测图案的主体和边缘的装置，存储装置 具有用于分别存储检测到的主体和图案的多个边缘的多个存储单元，用于测量图案的两个平行边缘之间的图案的主体的宽度的装置，用于检测和校正缺失图案边缘的装置， 用于反转图案的装置，用于减小图案的装置和用于消除图案内的针孔和污渍的装置。

    Static induction transistor
    65.
    发明授权
    Static induction transistor 失效
    静电感应晶体管

    公开(公告)号：US4326209A

    公开(公告)日：1982-04-20

    申请号：US86670

    申请日：1979-10-19

    Applicant: Jun-ichi Nishizawa ,  Takashi Yoshida

    Inventor： Jun-ichi Nishizawa ,  Takashi Yoshida

    IPC: H01L29/772 ,  H01L29/80

    CPC classification number: H01L29/7722

    Abstract: A static induction transistor of the type wherein carriers are injected from a source to a drain across a potential barrier induced in a current channel and wherein the height of the potential barrier can be varied in response to a gate bias voltage applied to a gate and to a drain bias voltage applied to the drain to thereby control the magnitude of a drain current of the transistor. The product of the channel resistance R.sub.c and the true transconductance G.sub.m of the transistor is maintained less than one and the product of the true transconductance and the series resistance R.sub.s of the transistor is maintained greater than or equal to one in the low drain current region in the operative state of the transistor. The series resistance R.sub.s is the sum of a resistance of the source, a resistance from the source to the current channel, and the channel resistance from the entrance of the current channel to the position of maximum value (extrema point) of the potential barrier in the current channel. This static induction transistor has the advantage that the current-voltage characteristic curve is nearly linear over a very wide range of drain current including the low drain current region. In an upside-down structure, the above-mentioned conditions can be easily attained by selecting respective impurity concentrations and thicknesses of a substrate and an epitaxial layer grown thereon.

    Abstract translation: 一种静电感应晶体管，其中载流子从源极流到跨越在电流通道中感应的势垒的漏极，并且其中势垒的高度可以响应于施加到栅极的栅极偏置电压而变化，并且 施加到漏极的漏极偏置电压，从而控制晶体管的漏极电流的大小。 晶体管的沟道电阻Rc和真正跨导Gm的乘积保持小于1，并且晶体管的真正跨导和串联电阻Rs的乘积在低漏极电流区域中保持为大于或等于1的乘积 晶体管的工作状态。 串联电阻Rs是源极的电阻，源极到电流通道的电阻以及从当前通道的入口到位势的最大值（极值点）位置的通道电阻之和 当前渠道。 该静态感应晶体管的优点是电流 - 电压特性曲线在包括低漏极电流区域的非常宽的漏极电流范围内几乎是线性的。 在上下颠倒的结构中，通过选择基板和其上生长的外延层的各自的杂质浓度和厚度，可以容易地获得上述条件。

    Static induction transistor
    66.
    发明授权
    Static induction transistor 失效
    静电感应晶体管

    公开(公告)号：US4199771A

    公开(公告)日：1980-04-22

    申请号：US893537

    申请日：1978-04-04

    Applicant: Jun-Ichi Nishizawa ,  Takashi Yoshida

    Inventor： Jun-Ichi Nishizawa ,  Takashi Yoshida

    IPC: H01L29/80 ,  H01L21/331 ,  H01L29/73 ,  H01L29/772 ,  H01L29/74

    CPC classification number: H01L29/7722

    Abstract: In a static induction transistor of the type wherein carriers are injected from a source region to a drain region across a potential barrier induced in a current channel, and wherein the height of the potential barrier can be varied in response to a gate bias voltage applied to a gate to thereby control the magnitude of a drain current of the transistor. The product of the channel resistance R.sub.c and the true transconductance (G.sub.m) of the transistor is maintained less than one and the product of the true transconductance and the series resistance R.sub.s of the transistor is maintained greater than or equal to one in the main operative state of the transistor. The series resistance R.sub.s is the sum of a resistance of the source, a resistance from the source to the current channel, and the channel resistance from the entrance of the current channel to the position of maximum value (extrema point) of the potential barrier in the current channel. This static induction transistor has the advantage that the current-voltage characteristic curve is nearly linear over a very wide range of drain current including the low drain current region.

    Abstract translation: 在这种类型的静态感应晶体管中，其中载流子从源区域注入跨越在电流通道中感应的势垒的漏极区，并且其中势垒的高度可以响应于施加到 栅极，从而控制晶体管的漏极电流的大小。 晶体管的沟道电阻Rc和真正跨导（Gm）的乘积保持小于1，并且晶体管的真正跨导和串联电阻Rs的乘积在主要工作状态下保持为大于或等于1 的晶体管。 串联电阻Rs是源极的电阻，源极到电流通道的电阻以及从当前通道的入口到位势的最大值（极值点）位置的通道电阻之和 当前渠道。 该静态感应晶体管的优点是电流 - 电压特性曲线在包括低漏极电流区域的非常宽的漏极电流范围内几乎是线性的。

    Method and apparatus for automatic weld line tracing
    67.
    发明授权
    Method and apparatus for automatic weld line tracing 失效
    自动焊线跟踪的方法和装置

    公开(公告)号：US4192986A

    公开(公告)日：1980-03-11

    申请号：US823196

    申请日：1977-08-09

    Applicant: Tsugio Udagawa ,  Takeshi Araya ,  Takashi Yoshida

    Inventor： Tsugio Udagawa ,  Takeshi Araya ,  Takashi Yoshida

    IPC: B23Q35/04 ,  B23K9/127 ,  B23Q35/127 ,  G05B13/00 ,  G05B13/02 ,  B23K9/12

    CPC classification number: B23Q35/127 ,  B23K9/1276

    Abstract: A method and apparatus for automatic weld line tracing using a non-contact sensor for detection of a weld line, which sensor is continuously reciprocated across the groove. Signals produced from the sensor during the reciprocation are compared at the ends of the groove, and the lower voltage value of the two signals is determined. A value lower than the lower voltage of the two signals by .delta. is predetermined and the position associated with the value is detected by a displacement-measuring instrument, the output of which is utilized for control of the positions of a welding torch.

    Abstract translation: 一种用于使用非接触式传感器自动焊接线追踪的方法和装置，用于检测焊接线，该传感器跨越凹槽连续往复运动。 在往复运动期间由传感器产生的信号在槽的端部进行比较，并且确定两个信号的较低电压值。 预定值低于两个信号的较低电压值，并且通过位移测量仪器检测与该值相关联的位置，该位移测量仪器的输出用于控制焊枪的位置。

    Color diffusion transfer photographic materials with vinyl copolymer neutralization rate controlling layer
    68.
    发明授权
    Color diffusion transfer photographic materials with vinyl copolymer neutralization rate controlling layer 失效
    彩色扩散转印照相材料与乙烯基共聚物中和率控制层

    公开(公告)号：US4123275A

    公开(公告)日：1978-10-31

    申请号：US708973

    申请日：1976-07-26

    Applicant: Yukio Karino ,  Shinji Sakaguchi ,  Takashi Yoshida

    Inventor： Yukio Karino ,  Shinji Sakaguchi ,  Takashi Yoshida

    IPC: G03C8/54 ,  G03C7/00 ,  G03C1/40 ,  G03C5/54

    CPC classification number: G03C8/54

    Abstract: In a color diffusion transfer photographic material comprising a photosensitive element including at least one light-sensitive silver halide emulsion layer having a dye image providing material associated therewith, an image receiving element for fixing the diffusible dye formed from said dye image providing material to form a dye image, an alkaline processing composition capable of developing the exposed photosensitive element, and, if necessary, a hydrophilic colloid layer, the photographic material further having neutralizing means for reducing the pH of the alkaline processing composition. The stability of the transferred dye image formed in the image receiving element is improved by incorporating in the neutralization rate controlling layer of the neutralizing means a copolymer of a vinyl compound and an unsaturated monomer, said copolymer having the recurring structural unit represented by the general formula: ##STR1## wherein R represents a hydrogen atom, an aliphatic group having 1 to 10 carbon atoms, or an aryl group.

    Abstract translation: 在包含感光元件的彩色扩散转印照相材料中，所述感光元件包括至少一个具有与其相关的染料图像的感光卤化银乳剂层，用于固定由所述染料图像提供材料形成的可扩散染料的图像接收元件，以形成 染料图像，能够显影曝光的感光元件的碱性处理组合物，以及必要时的亲水胶体层，所述照相材料还具有用于降低碱性处理组合物的pH的中和装置。 通过在中和装置的中和速率控制层中加入乙烯基化合物和不饱和单体的共聚物，可以改善在图像接收元件中形成的转印染料图像的稳定性，所述共聚物具有由通式表示的重复结构单元 ：其中R表示氢原子，碳原子数1〜10的脂肪族基或芳基。

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