Abstract:
A fully reticulated pyroelectric imager is made by affixing a first major surface of a layer of poled pyroelectric material to a substrate and polishing a second major surface of the pyroelectric layer to reduce the layer to a predetermined thickness. An electrically conductive electrode layer is deposited on the second major surface of the pyroelectric layer and portions of the electrode layer are selectively removed to define a two dimensional array of front side electrodes on the pyroelectric layer. Portions of the pyroelectric layer are then selectively removed to define a two dimensional array of pyroelectric detector elements on the substrate, with one of the front side electrodes on the second major surface of each detector element. A polymer layer is deposited over the arrays of front side electrodes and detector elements and a portion of the polymer layer is selectively removing over each front side electrode to create a via to each front side electrode. A two dimensional array of electrically conductive pads is deposited on the polymer layer such that each pad contacts a front side electrode through the corresponding via. The detector element array is mated to a multiplexer chip by connecting each pad on the detector array to circuitry on the multiplexer chip and the substrate is removed. An electrically conductive radiation absorbing layer is then deposited on the first major surface of each pyroelectric detector element.
Abstract:
The invention relates to a method for producing a microsystem (1) having pixels, comprising the following steps: providing a silicon wafer; producing a thermal silicon oxide layer on the surface of the silicon wafer as a base layer (5) having a thickness between 200 nm and 1000 nm by oxidizing the silicon wafer; producing a thin silicon oxide layer directly on the base layer (5) as a substrate layer (6) having a thickness of 100 nm to 700 nm by means of a thermal deposition method; producing a platinum layer directly on the substrate layer (6) by means of a thermal deposition method, which platinum layer has a thickness of 40 nm to 200 nm, whereby an intermediate product comprising the silicon wafer, the base layer (5), the substrate layer (6), and the platinum layer is produced; cooling the intermediate product to room temperature; structuring the platinum layer in a pixel-like manner by removing superfluous areas of the platinum layer, whereby bottom electrodes (8, 12) of the pixels (7, 8) are formed in shape of pixels on the substrate layer (5) by the remaining areas of the platinum layer; removing material on the side of the silicon wafer facing away from the base layer (5), such that a frame (3) remains and a membrane (4) formed by the base layer (5) and the substrate layer (6) is tensioned by the frame (3); finishing the microsystem (1).
Abstract:
Es wird eine pyroelektrische Sensorvorrichtung (100) vorgeschlagen. Die pyroelektrische Sensorvorrichtung (100) weist eine pyroelektrische Erfassungseinrichtung (110) zum Erfassen von Wärmestrahlung auf. Auch weist die pyroelektrische Sensorvorrichtung (100) eine thermoelektrische Temperiereinrichtung (120) auf. Die thermoelektrische Temperiereinrichtung (120) ist thermisch mit der pyroelektrischen Erfassungseinrichtung (110) gekoppelt. Auch ist die thermoelektrische Temperiereinrichtung (120) ansteuerbar, um eine thermische Wechselbeanspruchung der pyroelektrischen Erfassungseinrichtung (110) zu bewirken.
Abstract:
An apparatus for detecting position or temperature distribution of an object has a lens which is rotated around a pyroelectric type infrared sensor to collect incident infrared ray on the sensor while scanning the incident infrared ray in a rotational direction. The optical scanning is operated also in the longitudinal direction by providing with a plurarity of lenses having different view in the longitudinal direction, the lenses being rotated sequentialy around the sensor. Further, detection of temperature of an object is conducted without using optical chopper by alternately observing the object and a standard temperature material which is arranged in a part of view, or by providing a stationary slit unit on a curved surface formed around a center axis which is the same as the rotation axis of the lens and a movable slit unit heaving the same pitch and arranged adjacent to the stationary slit unit and rotating together with the lens to intermitting the incident infrared ray.
Abstract:
A thermal imaging device includes an array of pyroelectric detector elements, 31, 32, 33 supported by an array of pillars 36, the pillars also being effective to enable the passage of electrical signals between the detector elements and an electrical signal processing means 38. Each pillar 36 is separated from a respective detector electrode 33 by an elongate electrically condutive strip 35. The device includes areas of infra-red absorbant material 32a effective to conduct heat from non-electroded parts of the device into adjacent pyroelectric detector elements.
Abstract:
A thermal radiation detection apparatus has an array of pyroelectric detector devices (10) for receiving radiation from a scene whose outputs, e.g. from associated source followers (12) are supplied via a multiplexer (14) in turn to a processing circuit (20) which is responsive to each detector device signal to produce an output which substantially faithfully reproduces the received radiation signal without requiring that a chopper be used. The processing circuit operates with a correction factor to produce an output signal with first and second components proportional respectively to the device signal and its rate of change, the relative proportions of the components being in a ratio according to the device's thermal time constant. Initial device voltage level and the device's electrical time constant effects can be corrected by additional processing in the circuit (20), producing a third component of the output proportional to the integral of the device's output and in a ratio to the first component according to the electrical time constant.
Abstract:
PROBLEM TO BE SOLVED: To provide a sensor capable of improving the sensitivity of an infrared sensor.SOLUTION: The sensor includes: a ferroelectric substance element 10 having a first electrode 11, a second electrode 12 and a ferroelectric film 13 disposed between the first electrode and the second electrode, and composed of a ferroelectric substance; and detection means 20 for reading a charge generated in the ferroelectric substance element. The detection means is configured to apply a first voltage for aligning the polarization directions of the ferroelectric film and a second voltage for inverting the polarization of at least a part of the ferroelectric film whose polarization directions are aligned, and to perform reading.