公开(公告)号：EP2291708A4

公开(公告)日：2013-05-01

申请号：EP09753386

申请日：2009-05-29

Applicant: OPALUX INC

Inventor： ARSENAULT ANDRE ,  OZIN GEOFFREY ALAN ,  PUZZO DANIEL PATRICK

IPC: G02F1/19 ,  G01R19/145 ,  G09F13/00 ,  G09G3/20 ,  H01L33/00 ,  H01L33/46 ,  H01S5/125 ,  H01S5/187

CPC classification number: G02F1/03 ,  B82Y20/00 ,  G02F1/009 ,  G02F1/0128 ,  G02F1/0147 ,  G02F1/15 ,  G02F1/21 ,  G02F2001/151 ,  G02F2001/1515 ,  G02F2201/346 ,  G02F2202/32 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01S3/08059 ,  Y10S977/773 ,  H01L2924/00

Abstract: A tunable photonic crystal device comprising: alternating layers of a first material and a second material, the alternating layers comprising a responsive material, the responsive material being responsive to an external stimulus, the alternating layers having a periodic difference in refractive indices giving rise to a first reflected wavelength; wherein, in response to the external stimulus, a change in the responsive material results in a reflected wavelength of the device shifting from the first reflected wavelength to a second reflected wavelength.

公开(公告)号：EP1722265A4

公开(公告)日：2008-07-02

申请号：EP05719194

申请日：2005-02-16

Applicant: FURUKAWA ELECTRIC CO LTD ,  BABA TOSHIHIKO

Inventor： KISE TOMOFUMI ,  KIMOTO TATSUYA ,  YOKOUCHI NORIYUKI ,  BABA TOSHIHIKO

IPC: G02F1/025 ,  G02B6/12 ,  G02B6/122 ,  G02F1/017 ,  H01S5/026 ,  H01S5/10 ,  H01S5/12 ,  H01S5/183 ,  H01S5/20

CPC classification number: B82Y20/00 ,  G02B6/1225 ,  G02F1/01708 ,  G02F1/025 ,  G02F2201/346 ,  G02F2202/32 ,  G02F2203/055 ,  H01S5/0265 ,  H01S5/105 ,  H01S5/12 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/18369 ,  H01S5/2027

Abstract: Disclosed is a photonic crystal semiconductor device which enables to easily form various optical devices having a photonic crystal structure by using a semiconductor and a semiconductor manufacturing process. Also disclosed is a method for manufacturing such a photonic crystal semiconductor device. The photonic crystal semiconductor device has a photonic crystal structure wherein a lower DBR layer (1), a core layer (2), an upper DBR layer (3) and a dielectric multilayer film (6) composed of multiple dielectric layers are sequentially formed on an n-InP substrate (11) in this order. A plurality of vacancies (9) are formed in the core layer (2) and the upper DBR layer (3) in the film thickness direction, and a line defect portion (10) is in the region between the vacancies (9) where no vacancy (9) is present. The line defect portion (10) functions as an optical waveguide.

公开(公告)号：EP0844511B2

公开(公告)日：2006-12-20

申请号：EP98102389.8

申请日：1993-10-07

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Mizuuchi, Kiminori ,  Yamamoto, Kazuhisa

IPC: G02F1/35 ,  G02F1/37

CPC classification number: G02F1/3558 ,  G02F1/03 ,  G02F1/3775 ,  G02F2001/3546 ,  G02F2001/3548 ,  G02F2201/346 ,  G02F2202/20 ,  Y10T29/49016

Abstract: An optical wavelength converting device is provided with a LiTaO3 substrate, a plurality of inverted-polarization layers periodically arranged in an upper surface of the LiTaO3 substrate, and an optical waveguide crossing the inverted-polarization layers. The upper surface of the LiTaO3 substrate is directed toward a -X-crystal axis direction. The inverted-polarization layers are formed by exchanging Ta ions of the LiTaO3 substrate for H ions, and an extending direction of each inverted-polarization layer is inclined at an angle of theta degrees (6 ions of the LiTaO3 substrate and the inverted-polarization layers for H ions to set a refractive index of the optical waveguide higher than that of the LiTaO3 substrate. The optical waveguide extends in a +Y-crystal axis direction. Fundamental waves polarized in a transverse electric mode induce electric field directed in +/-Y-crystal axis directions and are converted into second harmonic waves in the optical waveguide.

公开(公告)号：EP1669799A1

公开(公告)日：2006-06-14

申请号：EP03748655.2

申请日：2003-10-01

Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA

Inventor： KOYATA, Y., Mitsubishi Denki Kabushiki Kaisha ,  HIRANO, Y., Mitsubishi Denki Kabushiki Kaisha ,  IMAKI, Masao, Mitsubishi Denki Kabushiki Kaisha ,  TERAMOTO, K., Mitsubishi Denki Kabushiki Kaisha ,  SHIBUE, S., Mitsubishi Denki Kabushiki Kaisha

IPC: G02F1/37

CPC classification number: H01S5/026 ,  G02F1/3775 ,  G02F2201/34 ,  G02F2201/346 ,  H01S3/08045 ,  H01S3/0815 ,  H01S3/082 ,  H01S3/109 ,  H01S5/065 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/125 ,  H01S5/14 ,  H01S5/141 ,  H01S5/20 ,  H01S5/2036

Abstract: A wavelength converting laser device having a Watt-level power output and high efficiency is obtained.
It has a laser diode including an optical resonator having a pair of facing reflectors including a reflecting surface having a shape reducing loss in optical resonator with regard to a specific horizontal transverse mode of a laser as compared to the loss in optical resonator for other horizontal transverse modes; and a wavelength converter for converting the laser into a harmonic.

Abstract translation: 获得具有瓦特功率输出和高效率的波长转换激光器件。 它具有激光二极管，该激光二极管包括具有一对面对反射器的光学谐振器，相对于其它水平横向光学谐振器的损耗，相对于激光器的特定水平横向模式，光学谐振器具有减小损耗的形状的反射表面 模式; 以及用于将激光转换成谐波的波长转换器。

公开(公告)号：EP1654791A2

公开(公告)日：2006-05-10

申请号：EP04786115.8

申请日：2004-07-26

Applicant: University of Connecticut ,  Opel, Inc.

Inventor： TAYLOR, Geoff, W. ,  DUNCAN, Scott

IPC: H01S5/00

CPC classification number: H01S5/423 ,  B82Y20/00 ,  G02F1/01716 ,  G02F2201/346 ,  H01L27/15 ,  H01S5/06203 ,  H01S5/18313 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/3086 ,  H01S5/4087

Abstract: An optoelectronic integrated circuit comprises a substrate, a multilayer structure formed on the substrate, and an array of thyristor devices and corresponding resonant cavities formed in the multilayer structure. The resonant cavities, which are adapted to process different wavelengths of light, are formed by selectively removing portions of said multilayer structure to provide said resonant cavities with different vertical dimensions that correspond to the different wavelengths. Preferably, that portion of the multilayer structure that is selectively removed to provide the multiple wavelengths includes a periodic substructure formed by repeating pairs of an undoped spacer layer and an undoped etch stop layer. The multilayer structure may be formed from group III-V materials. In this case, the undoped spacer layer and undoped etch stop layer of the periodic substructure preferably comprises undoped GaAs and undoped AlAs, respectively. The undoped AlAs functions as an etch stop during etching by a chlorine-based gas mixture that includes fluorine. The array of multi-wavelength thyristor devices may be used to realize devices that provide a variety of optoelectronic functions, such as an array of thyristor-based lasers that emit light at different wavelengths and/or an array of thyristor-based detectors that detect light at different wavelengths (e.g., for wavelength-division-multiplexing applications).

Abstract translation: 光电集成电路包括基板，形成在基板上的多层结构，以及形成在多层结构中的可控硅器件阵列和相应的谐振腔。 适于处理不同波长的光的谐振腔通过选择性地去除所述多层结构的部分以提供对应于不同波长的不同垂直尺寸的所述谐振腔来形成。 优选地，被选择性地去除以提供多个波长的多层结构的该部分包括通过重复未掺杂间隔层和未掺杂的蚀刻停止层的成对形成的周期性子结构。 多层结构可以由III-V族材料形成。 在这种情况下，周期性亚结构的未掺杂的间隔层和未掺杂的蚀刻停止层优选分别包括未掺杂的GaAs和未掺杂的AlAs。 未掺杂的AlAs在通过包含氟的氯基气体混合物蚀刻期间用作蚀刻停止。 多波长晶闸管器件的阵列可以用于实现提供各种光电子功能的器件，例如发射不同波长的光的晶闸管基激光器阵列和/或检测光的基于晶闸管的检测器的阵列 在不同的波长（例如，用于波分复用应用）。

公开(公告)号：EP1315024A1

公开(公告)日：2003-05-28

申请号：EP01440380.2

申请日：2001-11-12

Applicant: ALCATEL

Inventor： Pfeiffer, Thomas, Dr.

IPC: G02F1/21 ,  G02F1/1333 ,  G02B6/34

CPC classification number: G02F1/13473 ,  G02B2006/12107 ,  G02F1/1326 ,  G02F1/216 ,  G02F2201/346

Abstract: According to the present invention the tunable optical device comprises a first optical wave guide and a second optical wave guide defining a space between the two wave guides with space comprises the first cell with liquid crystal material and a second cell with liquid crystal material spaced by a third wave guide and the first and the second cell for liquid crystal material having orientation of the liquid crystal material perpendicular to each other.

Abstract translation: 。根据本发明的可调谐光学装置包括第一光波导和第二光波导限定在两个波导与空间之间的空间包括用液晶材料和液晶材料通过间隔开的第二小区中的第一小区 第三波导和所述第一和用于具有液晶材料的取向的液晶材料垂直于海誓山盟第二小区。

公开(公告)号：EP1251647A1

公开(公告)日：2002-10-23

申请号：EP02251730.4

申请日：2002-03-12

Applicant: Nortel Networks Limited

Inventor： Fells, Julian ,  Watley, Daniel ,  Baker, Vernon

IPC: H04B10/18 ,  G02B6/34

CPC classification number: G02B6/29394 ,  G02B6/2932 ,  G02B6/29322 ,  G02B6/29395 ,  G02B6/29398 ,  G02B6/4215 ,  G02F1/0134 ,  G02F2201/346 ,  H04B10/25133 ,  H04B2210/256

Abstract: The present specification describes strain applicators, incorporating two actuators having different actuation characteristics acting in cooperation, and their use in adjustable optical filters and adjustable dispersion devices (such as compensators) to controllably strain fibre Bragg gratings to alter their reflectance characteristics. Preferred examples of the strain applicators are hybrids of a fast response actuator with a slower device, and provide a wide overall range of adjustment with fast response tuning within that range.
The strain applicators are used to provide dither, in particular to provide both in-phase and anti-phase dither of the strains applied to FBGs in a twin-grating compensator. The in-phase dithering enables centering on an incoming signal to be performed and the out of phase dithering dithers the dispersion, enabling the compensator to track changes in dispersion rapidly, using an appropriately arranged control loop.
An improved method of extracting a dispersion error signal from optical signals is also described, based on a simplified spectral analysis of data carried by the signals.

Abstract translation: 本说明书描述了应变施加器，其结合了具有协同作用的不同致动特性的两个致动器，以及它们在可调节光学滤波器和可调散射装置（例如补偿器）中的应用，以可控制地应变光纤布拉格光栅以改变其反射特性。 应变施加器的优选示例是具有较慢装置的快速响应致动器的混合，并且在该范围内通过快速响应调谐提供宽的整体范围的调整。 应变施加器用于提供抖动，特别是在双光栅补偿器中提供施加到FBG的应变的同相和反相抖动。 同相抖动使得能够基于要执行的输入信号进行定心，并且异相抖动使色散抖动，使得补偿器能够使用适当布置的控制回路快速跟踪色散变化。 还基于信号承载的数据的简化频谱分析，描述了从光信号中提取色散误差信号的改进方法。

公开(公告)号：EP1055959A2

公开(公告)日：2000-11-29

申请号：EP00110715.0

申请日：2000-05-19

Applicant: NEC CORPORATION

Inventor： Iwano, Tadayuki

IPC: G02F1/09

CPC classification number: G02F1/01 ,  G02F1/0147 ,  G02F1/21 ,  G02F2201/346 ,  G02F2203/48

Abstract: A variable optical attenuator and an optical power level adjusting method used this variable optical attenuator, which has high reliability and a wide dynamic range, are provided. The variable optical attenuator consists of an optical filter and a temperature control circuit. And the optical filter provides a dielectric multi-layer film and an optical isolator. The dielectric multi-layer film changes its transmitting characteristic of light by the change of temperature. The optical isolator absorbs or removes returned light reflected from the dielectric multi-layer film. The temperature control circuit controls the temperature of the dielectric multi-layer film. The variable optical attenuator controls the transmitting characteristic of light of the dielectric multi-layer film by using the temperature control circuit. And the variable optical attenuator adjusts the power level of the optical signal of each wavelength transmitting between the WDM communication systems to a desiring level at the attenuating region in which the transmitting amount of the dielectric multi-layer film becomes small gradually.

Abstract translation: 提供了具有高可靠性和宽动态范围的可变光衰减器和光功率电平调节方法。 可变光衰减器由光滤波器和温度控制电路组成。 并且滤光器提供介电多层膜和光隔离器。 电介质多层膜通过温度的变化改变其透光特性。 光隔离器吸收或去除从电介质多层膜反射的返回光。 温度控制电路控制电介质多层膜的温度。 可变光衰减器通过使用温度控制电路来控制电介质多层膜的光的传输特性。 并且可变光衰减器将在WDM通信系统之间传输的每个波长的光信号的功率电平调节到电介质多层膜的透射量逐渐变小的衰减区域的期望电平。

公开(公告)号：EP0844511B1

公开(公告)日：1999-12-15

申请号：EP98102389.8

申请日：1993-10-07

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Mizuuchi, Kiminori ,  Yamamoto, Kazuhisa

IPC: G02F1/35 ,  G02F1/37

CPC classification number: G02F1/3558 ,  G02F1/03 ,  G02F1/3775 ,  G02F2001/3546 ,  G02F2001/3548 ,  G02F2201/346 ,  G02F2202/20 ,  Y10T29/49016

Abstract: An optical wavelength converting device is provided with a LiTaO3 substrate, a plurality of inverted-polarization layers periodically arranged in an upper surface of the LiTaO3 substrate, and an optical waveguide crossing the inverted-polarization layers. The upper surface of the LiTaO3 substrate is directed toward a -X-crystal axis direction. The inverted-polarization layers are formed by exchanging Ta ions of the LiTaO3 substrate for H ions, and an extending direction of each inverted-polarization layer is inclined at an angle of theta degrees (6 ions of the LiTaO3 substrate and the inverted-polarization layers for H ions to set a refractive index of the optical waveguide higher than that of the LiTaO3 substrate. The optical waveguide extends in a +Y-crystal axis direction. Fundamental waves polarized in a transverse electric mode induce electric field directed in +/-Y-crystal axis directions and are converted into second harmonic waves in the optical waveguide.

公开(公告)号：EP0592226A1

公开(公告)日：1994-04-13

申请号：EP93307997.2

申请日：1993-10-07

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Mizuuchi, Kiminori ,  Yamamoto, Kazuhisa

IPC: G02F1/37 ,  G02B6/12

CPC classification number: G02F1/3558 ,  G02F1/03 ,  G02F1/3775 ,  G02F2001/3546 ,  G02F2001/3548 ,  G02F2201/346 ,  G02F2202/20 ,  Y10T29/49016

Abstract: An optical wavelength converting device is provided with a LiTaO₃ substrate, a plurality of inverted-polarization layers periodically arranged in an upper surface of the LiTaO₃ substrate, and an optical waveguide crossing the inverted-polarization layers. The upper surface of the LiTaO₃ substrate is directed toward a -X-crystal axis direction. The inverted-polarization layers are formed by exchanging Ta⁺ ions of the LiTaO₃ substrate for H⁺ ions, and an extending direction of each inverted-polarization layer is inclined at an angle of ϑ degrees (6 ≦ ϑ ≦174) to the +C-crystal axis direction toward a -Y-crystal axis direction. The optical waveguide is formed by exchanging Ta⁺ ions of the LiTaO₃ substrate and the inverted-polarization layers for H⁺ ions to set a refractive index of the optical waveguide higher than that of the LiTaO₃ substrate. The optical waveguide extends in a +Y-crystal axis direction. Fundamental waves polarized in a transverse electric mode induce electric field directed in ±Y-crystal axis directions and are converted into second harmonic waves in the optical waveguide.

Abstract translation: 光波长转换装置设置有LiTaO 3衬底，周期性地布置在LiTaO 3衬底的上表面中的多个倒置极化层和与反极化层交叉的光波导。 LiTaO3基板的上表面朝向-X晶轴方向。 反相极化层通过将LiTaO 3衬底的Ta +离子交换为H +离子形成，并且每个反向偏振层的延伸方向以θ度的角度倾斜（6 < / = 174）朝向-Y晶轴方向的+ C晶轴方向。 通过交换LiTaO3衬底的Ta +和H +离子的反向偏振层来形成光波导，以使光波导的折射率高于LiTaO 3衬底的折射率。 光波导沿+ Y晶轴方向延伸。 在横向电模式中极化的基波感应在+/- Y晶轴方向上引导的电场，并在光波导中转换成二次谐波。