公开(公告)号：EP1858086A1

公开(公告)日：2007-11-21

申请号：EP06715473.2

申请日：2006-03-09

Applicant: Asahi Kasei EMD Corporation

Inventor： CAMARGO, Edson, Gomes ,  NAGASE, Kazuhiro ,  KURIHARA, Masaaki ,  KANAYAMA, Yuichi

IPC: H01L31/02 ,  H01L31/12 ,  H01L33/00 ,  H01S5/022

CPC classification number: H01L31/0203 ,  H01L24/97 ,  H01L25/167 ,  H01L27/14618 ,  H01L33/44 ,  H01L33/486 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2924/18165 ,  H01L2924/3025 ,  H01S5/02248 ,  H01S5/02296 ,  H01S5/0683 ,  Y10T29/49002 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: The present invention provides an optical device that is miniature, is highly sensitive and has a simplified package, and a manufacturing method thereof with high production efficiency and high reliability. The present invention is an optical device comprising: a photoelectric conversion element (50) having at least one photoelectric conversion portion (1) which is formed on a substrate (10); a sealing material (14); and a connection terminal (3). The optical device comprises an optical window which is an interface between the photoelectric conversion element (50) and an outside of the optical device; and an aperture (6) formed in the sealing material 14, and whose bottom face is the optical window. An entire face of the optical window is exposed to the outside. An optical adjustment element (13) may be formed on the interface. In this case, the interface between the optical adjustment element (13) and the outside is the optical window.

Abstract translation: 本发明提供了一种微型的，高度灵敏的并且具有简化的封装的光学器件及其制造方法，其生产效率高，可靠性高。 本发明是一种光学装置，包括：光电转换元件（50），其具有至少一个形成在基板（10）上的光电转换部分（1）; 密封材料（14）; 和连接端子（3）。 光学装置包括光学窗口，该光学窗口是光电转换元件（50）与光学器件外部之间的界面; 以及形成在密封材料14中并且其底面是光学窗口的孔（6）。 光学窗口的整个面都暴露在外面。 光学调节元件（13）可以形成在界面上。 在这种情况下，光学调节元件（13）与外部之间的界面是光学窗口。

公开(公告)号：EP1855118A1

公开(公告)日：2007-11-14

申请号：EP06714390.9

申请日：2006-02-23

Applicant: Asahi Kasei EMD Corporation

Inventor： SHIBAHARA, Koji ,  MATSUMOTO, Osamu

IPC: G01R15/20

CPC classification number: G01R15/202

Abstract: The present invention provides a current measuring apparatus having an improved structure to inhibit the possible adverse effect of a current in a different phase and the possible generation of an induced electromotive force caused by a measurement target current, enabling the measurement target current to be accurately detected even with the small size of the apparatus. The current measuring apparatus includes a printed circuit board 1 having Hall elements 2a, 2b and a signal processing integrated circuit 3 mounted thereon, the Hall elements 2a, 2b sensing a magnetic field generated by a current flowing through a current measurement target bus bar 4a, the signal processing integrated circuit 3 processing sensing outputs from the Hall elements 2a, 2b to calculate a value for the current flowing through the bus bar 4a. Magnetic sensing surfaces of the Hall elements 2a, 2b are arranged substantially perpendicularly to the direction of the magnetic field generated by the current flowing through the bus bar 4a. Further, the printed circuit board 1 is fixed to the bus bar 4a so that a circuit board surface of the printed circuit board 1 having a wire electrically connecting the Hall elements 2a, 2b to the signal processing integrated circuit 3 is positioned substantially parallel to the direction of the magnetic field.

Abstract translation: 本发明提供一种电流测量装置，其具有改进的结构，以抑制电流在不同相中的可能的不利影响以及可能产生由测量目标电流引起的感应电动势，从而能够精确地检测测量目标电流 即使使用小尺寸的装置。 电流测量装置包括具有霍尔元件2a，2b和安装在其上的信号处理集成电路3的印刷电路板1，霍尔元件2a，2b感测由流过电流测量目标汇流条4a的电流产生的磁场， 信号处理集成电路3处理来自霍尔元件2a，2b的感测输出，以计算流过母线4a的电流的值。 霍尔元件2a，2b的磁感应表面基本上垂直于由流过母线4a的电流产生的磁场的方向。 此外，印刷电路板1固定到汇流条4a，使得具有将霍尔元件2a，2b电连接到信号处理集成电路3的导线的印刷电路板1的电路板表面基本上平行于 磁场方向。

公开(公告)号：EP0872909B1

公开(公告)日：2006-07-12

申请号：EP96901111.3

申请日：1996-01-25

Applicant: Asahi Kasei EMD Corporation

Inventor： YAMASHITA, Masaya

IPC: H01M2/34 ,  H01M10/04 ,  H01M10/40 ,  H01M10/42

CPC classification number: H01M6/103 ,  H01M2/14 ,  H01M2/34 ,  H01M4/661 ,  H01M4/669 ,  H01M4/75 ,  H01M4/78 ,  H01M6/10 ,  H01M6/16 ,  H01M6/42 ,  H01M10/0431 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/4235 ,  H01M2200/00 ,  H01M2200/10

Abstract: A nonaqueous battery which comprises unit battery layers in a battery jar, each unit battery layer composed of a positive electrode plate having a positive electrode active material only on one side of a collector foil, a negative electrode plate having a negative electrode active material only on one side of a collector foil and a separator, and in which a surface of the positive electrode plate having thereon the positive electrode active material and a surface of the negative electrode plate having thereon the negative electrode active material face each other through the separator, and a surface of the positive electrode plate not having thereon the positive electrode active material and a surface of the negative electrode plate not having thereon the negative electrode active material face each other through an insulating film. According to the invention, safety of the battery is ensured since rapid temperature rise is suppressed inside even in the event of abnormal heating from outside, crushing of the battery in a direction of lamination, or short circuit between the positive electrode active material and the negative electrode due to nailing and the like.

公开(公告)号：EP1643212A1

公开(公告)日：2006-04-05

申请号：EP04746793.1

申请日：2004-07-01

Applicant: Asahi Kasei EMD Corporation

Inventor： KITAMURA, Toru; ,  SATO, Masanobu ,  YAMASHITA, Masaya ,  MIKOSHIBA, Norihiko

IPC: G01C17/28 ,  G01C21/08

CPC classification number: G01C17/28 ,  G01C17/38

Abstract: There are provided an azimuth measurement device and its method for realizing an update of an offset calculated from the data acquired by azimuth measurement. A geomagnetism output measured by a 3-axis magnetic sensor (10) is amplified by an amplification section (13) and input to an A/D conversion section (14). A chopper section (11) is arranged for switching the terminals for driving an X-axis magnetic sensor (2), a Y-axis magnetic sensor (3), and a Z-axis magnetic sensor (4) and applies drive voltage output from a drive power source section (12) to the X-axis magnetic sensor (2), the Y-axis magnetic sensor (3), and the Z-axis magnetic sensor (4). The output amplified value amplified by the amplification section (13) is converted from an analog signal to a digital signal by the A/D conversion section (14) and then is input to a sensitivity/offset correction calculation section (16). Output data from this sensitivity/offset correction calculation section (16) is input to an azimuth calculation section (20) and the corresponding azimuth information is output. A reliability information calculation section (19) outputs reliability information.

Abstract translation: 提供了一种方位测量装置及其方法，用于实现从由方位测量获得的数据计算的偏移的更新。 由3轴磁传感器（10）测量的地磁输出由放大部（13）放大并输入到A / D转换部（14）。 切断部（11），用于切换用于驱动X轴磁传感器（2），Y轴磁传感器（3）和Z轴磁传感器（4）的端子，并施加驱动电压 X轴磁传感器（2），Y轴磁传感器（3）和Z轴磁传感器（4）的驱动电源部分（12）。 由放大部分（13）放大的输出放大值由A / D转换部分（14）从模拟信号转换成数字信号，然后被输入到灵敏度/偏移校正计算部分（16）。 将来自该灵敏度/偏移校正计算部（16）的输出数据输入到方位计算部（20），输出对应的方位信息。 可靠性信息计算部（19）输出可靠性信息。

公开(公告)号：EP1443332A1

公开(公告)日：2004-08-04

申请号：EP02775480.3

申请日：2002-11-01

Applicant: Asahi Kasei EMD Corporation ,  SENTRON AG

Inventor： SHIBAHARA, Koji ,  YAMAGATA, Yo ,  POPOVIC, Radivoje ,  RACZ, Robert

IPC: G01R15/20

CPC classification number: G01R15/202 ,  G01R15/20 ,  G01R15/207

Abstract: A low-cost current sensor suitable for mass production and a manufacturing method thereof are provided. The current sensor is small with high sensitivity and can be packaged in a standard assembly line which is normally used when an integrated circuit is manufactured. Further, it is possible to obtain a sufficient shielding effect against a disturbance flux without degrading the detecting sensitivity of a flux. A first magnetic material 50 is bonded to the lower part of a current conductor 22C. The first magnetic material 50 has the function of converging and amplifying a flux 3 generated by thecurrent to be measured. A second magnetic material 51 is bonded above a magnetic sensor chip 20. The second magnetic material 51 has a shielding function against a disturbance flux entering from the outside.

Abstract translation: 提供适用于批量生产的低成本电流传感器及其制造方法。 电流传感器体积小，灵敏度高，可以封装在制造集成电路时通常使用的标准装配线上。 此外，可以在不降低磁通的检测灵敏度的情况下获得对干扰通量的足够的屏蔽效果。 第一磁性材料50结合到电流导体22C的下部。 第一磁性材料50具有会聚和放大由待测电流产生的通量3的功能。 第二磁性材料51结合在磁性传感器芯片20上方。第二磁性材料51具有防止从外部进入的干扰磁通的屏蔽功能。

公开(公告)号：EP3032588A1

公开(公告)日：2016-06-15

申请号：EP16152713.0

申请日：2008-12-19

Applicant: Asahi Kasei EMD Corporation

Inventor： Koricic, Marko ,  Suligoj, Tomislav ,  Mochizuki, Hidenori ,  Morita, Soichi

IPC: H01L29/735 ,  H01L21/331 ,  H01L21/8249 ,  H01L21/8222 ,  H01L21/8248 ,  H01L27/06 ,  H01L29/08 ,  H01L21/225 ,  H01L29/10 ,  H01L21/265

CPC classification number: H01L27/0623 ,  H01L21/2257 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/8249 ,  H01L29/0808 ,  H01L29/1008 ,  H01L29/1045 ,  H01L29/6625 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/735

Abstract: A configuration of a lateral transistor suited for the hybrid-integration (BiCMOS) of a high-performance lateral transistor (HCBT) and a CMOS transistor, and a method for manufacturing the lateral transistor are provided. A semiconductor device includes a HCBT 100 and a CMOS transistor 200 hybrid-integrated therein. The HCBT 100 has an open region 21 opened by etching a device isolating oxide film 6 surrounding an n-hill layer 11, an emitter electrode 31A and a collector electrode 31B each of which is formed in the open region 21 and is composed of a polysilicon film having such a thickness as to expose the n-hill layer 11 exposed by etching the device isolating oxide film, and an ultrathin oxide film 24 covering at least a part of the n-hill layer 11. The ultrathin oxide film 24 functions as a protective film for protecting the n-hill layer 11 from being etched when the polysilicon film is etched to form the emitter 20 electrode 31A and the collector electrode 31B.

Abstract translation: 提供了适用于高性能横向晶体管（HCBT）和CMOS晶体管的混合集成（BiCMOS）的横向晶体管的结构以及制造横向晶体管的方法。 半导体器件包括混合集成在其中的HCBT 100和CMOS晶体管200。 HCBT 100具有通过蚀刻围绕n-hill层11的器件隔离氧化膜6，发射电极31A和集电极31B而开放的开放区域21，每个形成在开放区域21中并且由多晶硅 具有通过蚀刻器件隔离氧化膜而暴露的n-hill层11的厚度的膜和覆盖n-hill层11的至少一部分的超薄氧化膜24.超薄氧化物膜24用作 当蚀刻多晶硅膜以形成发射极20电极31A和集电极31B时，用于保护n-hill层11的保护膜不被蚀刻。

公开(公告)号：EP3029716A1

公开(公告)日：2016-06-08

申请号：EP15196973.0

申请日：2008-09-12

Applicant: Asahi Kasei EMD Corporation

Inventor： Shibata, Yoshihiko ,  Miyahara, Masatoshi ,  Ikeda, Takashi ,  Kunimi, Yoshihisa

IPC: H01L21/02 ,  H01L21/203 ,  H01L21/205 ,  H01L29/26 ,  H01L43/06 ,  H01L29/267 ,  C30B25/18 ,  C30B29/40

CPC classification number: H01L29/267 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/02546 ,  H01L21/02658 ,  H01L43/065

Abstract: The present invention relates to a compound semiconductor substrate having a reduced dislocation (defect) density at an interface between a Si substrate and a compound semiconductor layer, and a method for producing the compound semiconductor substrate. Contaminants, such as organic matter and metal, on a surface of a Si substrate were removed by subjecting the Si substrate sequentially to organic washing, acid washing and alkaline washing, whereby a flat oxide film (not shown) was formed (S31). The oxide film on the surface was removed by using an aqueous hydrogen fluoride solution having a concentration of 1.0% by weight, whereby hydrogen termination treatment was performed (S32). The Si substrate immediately after being subjected to the hydrogen termination treatment was placed in a vacuum apparatus, and then the temperature of the Si substrate was raised in a vacuum apparatus (S33). If the substrate temperature is raised without any operation, the termination hydrogen is released. Before the hydrogen was released, pre-irradiation with As was performed (S34). Thus, an interface between the Si substrate and the compound semiconductor layer was prepared. Several minutes later, irradiation with Ga and As was performed (S35). Thereby, the compound semiconductor was formed (S36).

Abstract translation: 本发明涉及在Si衬底和化合物半导体层之间的界面处具有减少的位错（缺陷）密度的化合物半导体衬底及其制造方法。 通过使Si衬底依次进行有机洗涤，酸洗和碱洗，除去形成平坦氧化物膜（未图示）的Si衬底表面上的有机物和金属等污染物（S31）。 使用浓度为1.0重量％的氟化氢水溶液除去表面的氧化膜，由此进行氢终止处理（S32）。 将刚刚进行氢终止处理后的Si衬底置于真空装置中，然后在真空装置中升温Si衬底的温度（S33）。 如果衬底温度升高而没有任何操作，则释放终止氢。 在释放氢之前，进行As的预照射（S34）。 因此，制备了Si衬底和化合物半导体层之间的界面。 几分钟后，进行Ga和As的照射（S35）。 由此形成化合物半导体（S36）。

公开(公告)号：EP1962062B1

公开(公告)日：2016-03-09

申请号：EP06834680.8

申请日：2006-12-14

Applicant: Asahi Kasei EMD Corporation

Inventor： NISHIDA, Sosuke ,  TAKATSUKA, Toshinori

IPC: G01D5/14

CPC classification number: G01D5/145

公开(公告)号：EP2960667A1

公开(公告)日：2015-12-30

申请号：EP15177698.6

申请日：2007-03-28

Applicant: Asahi Kasei EMD Corporation

Inventor： KATAOKA, Makoto ,  KAKUTA, Katsumi ,  YAMAGATA, Yo ,  KANAYAMA, Yuichi

IPC: G01R33/07 ,  H01L43/06

CPC classification number: G01R33/07 ,  G01R33/0011 ,  H01L27/22 ,  H01L43/06

Abstract: The present invention relates to a magnetic sensor with which magnetic characteristics are made extremely stable by consideration of an area of contact of a base layer of a magnetic substance and a semiconductor substrate. On a semiconductor substrate (111) a plurality of Hall elements (112a, 112b) are embedded so as to be coplanar to a top surface of the semiconductor substrate while being mutually spaced apart by a predetermined distance, and above the Hall elements and the semiconductor substrate, a base layer (114), having coefficient of thermal expansion differing from that of the Hall elements and partially covers a region of each Hall elements, is formed via a protective layer (113), and a magnetic flux concentrator (115), having an area larger than the base layer and with magnetic amplification, is formed on the base layer. An area of contact of the base layer of the magnetic substance and the semiconductor substrate is made small to lessen the generation of an offset voltage.

Abstract translation: 磁传感器技术领域本发明涉及考虑到磁性物质的基底层与半导体基板的接触面积而使磁特性非常稳定的磁传感器。 在半导体衬底（111）上嵌入多个霍尔元件（112a，112b），以便与半导体衬底的顶表面共面一个预定距离相互间隔开，并且在霍尔元件和半导体 通过保护层（113）和磁通集中器（115）形成具有与霍尔元件的热膨胀系数不同的部分的基底层（114），并部分地覆盖每个霍尔元件的区域， 在基底层上形成具有大于基底层并且具有磁放大的面积的区域。 使磁性物质的基底层与半导体基板的接触面积小，以减少偏移电压的产生。

公开(公告)号：EP2023398B9

公开(公告)日：2015-02-18

申请号：EP08019935.9

申请日：2004-09-09

Applicant: Asahi Kasei EMD Corporation

Inventor： Ueno, Koichiro ,  Kuze, Naohiro ,  Moriyasu, Yoshitaka ,  Nagase, Kazuhiro

IPC: H01L31/0304 ,  H01L31/0203 ,  H01L27/144

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  G01J1/02 ,  G01J1/0204 ,  G01J5/02 ,  G01J5/0215 ,  G01J5/04 ,  G01J5/045 ,  G01J5/20 ,  G01J2001/0276 ,  H01L31/1035 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.