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    Modular semiconductor processing system
    71.
    发明专利
    Modular semiconductor processing system 有权
    模块化半导体处理系统

    公开(公告)号：JP2013077819A

    公开(公告)日：2013-04-25

    申请号：JP2012208203

    申请日：2012-09-21

    Applicant: Asm Internatl Nv ,  エーエスエム インターナショナル エヌ. ヴェー.ASM International N.V.

    Inventor： THEODORUS G M OOSTERLAKEN

    IPC: H01L21/677 ,  B65G49/07 ,  H01L21/205

    CPC classification number: H01L21/67184 ,  H01L21/67161

    Abstract: PROBLEM TO BE SOLVED: To provide a modular semiconductor substrate processing system (1), including a plurality of independently operable substrate processing units (100).SOLUTION: Each unit (100) comprises: a reactor module (104); and a substrate transfer module (102). Within the system (1), the substrate transfer modules (102) of the different units (100) are serially interconnected such that substrates (116) may be exchanged between them. Exchange of the substrates (116) between neighboring processing units (100) is facilitated by a shared substrate hand-off station (130) that is associated with each pair of neighboring processing units. The actual transfer of the substrates is performed by a substrate handling robot (122), which may preferably be of the SCARA-type.

    Abstract translation: 解决的问题：提供一种包括多个可独立操作的基板处理单元（100）的模块化半导体基板处理系统（1）。 解决方案：每个单元（100）包括：反应器模块（104）; 和衬底转移模块（102）。 在系统（1）内，不同单元（100）的衬底传送模块（102）被串联连接，使得衬底（116）可在它们之间交换。 通过与每对相邻处理单元相关联的共享基板切换站（130）来促进相邻处理单元（100）之间的基板（116）的交换。 基板处理机器人（122）可以进行基板的实际传送，该机器人可优选为SCARA型。 版权所有（C）2013，JPO＆INPIT

    Wafer processing apparatus with heating type rotating substrate support
    73.
    发明专利
    Wafer processing apparatus with heating type rotating substrate support 有权
    带加热类型旋转基板支撑的加热加工设备

    公开(公告)号：JP2013021336A

    公开(公告)日：2013-01-31

    申请号：JP2012168882

    申请日：2012-07-12

    Applicant: Asm Internatl Nv ,  エーエスエム インターナショナル エヌ. ヴェー.ASM International N.V.

    Inventor： DE RIDDELL CHRIS H M ,  KLAUS P BOONSTRA ,  THEODORUS G M OOSTERLAKEN ,  LEEUWENHORST BARRENT J T

    IPC: H01L21/683 ,  H01L21/31

    CPC classification number: H01L21/67109 ,  F27B17/0025

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor substrate processing apparatus (1) comprising a substrate support assembly (30).SOLUTION: The substrate support assembly (30) comprises a substrate support (32) defining an outer support surface (34) for supporting a substrate or substrate carrier (24) thereon, and a heater (50) including a heat dissipating portion (54) that is disposed within the substrate support (32) and that extends underneath and substantially parallel to the support surface (34). The substrate support (32) is rotatably mounted around a rotation axis (L) that extends through the support surface (34), such that the support surface (34) is rotatable relative to the heat dissipating portion (54) of the heater (50).

    Abstract translation: 解决的问题：提供一种包括基板支撑组件（30）的半导体基板处理装置（1）。 解决方案：衬底支撑组件（30）包括限定用于在其上支撑衬底或衬底载体（24）的外部支撑表面（34）的衬底支撑件（32），以及包括散热部分 （54），其设置在所述衬底支撑件（32）内并且在所述衬底支撑件（32）的下方并且基本平行于所述支撑表面（34）延伸。 基板支撑件（32）围绕延伸穿过支撑表面（34）的旋转轴线（L）可旋转地安装，使得支撑表面（34）可相对于加热器（50）的散热部分（54）旋转 ）。 版权所有（C）2013，JPO＆INPIT

    Thermal processing furnace and liner for the same
    75.
    发明专利
    Thermal processing furnace and liner for the same 审中-公开
    热处理炉和内衬

    公开(公告)号：JP2012156510A

    公开(公告)日：2012-08-16

    申请号：JP2012023474

    申请日：2012-01-20

    Applicant: Asm Internatl Nv ,  エーエスエム インターナショナル エヌ. ヴェー.ASM International N.V.

    Inventor： JDIRA LUCIAN C ,  ADJEROUD NOUREDDINE

    IPC: H01L21/31 ,  H01L21/22

    Abstract: PROBLEM TO BE SOLVED: To provide a thermal processing furnace that overcomes or mitigates a problem of backflow of material deposited near the downstream end of a gas exhaust path, and also provide a liner that may be installed in a conventional thermal processing furnace (possibly as a replacement for the originally installed liner) so as to overcome or mitigate the problem of backflow.SOLUTION: A thermal processing furnace comprises: a generally bell jar-shaped outer reaction tube having a central axis; and an open-ended inner reaction tube for accommodating a wafer boat holding a plurality of substrates. The inner reaction tube is substantially coaxially disposed within the outer reaction tube, thereby defining a gas passage between an outer wall of the inner reaction tube and an inner wall of the outer reaction tube. At least one of the outer wall of the inner reaction tube and the inner wall of the outer reaction tube is provided with a flow deflector that protrudes radially from the respective wall into the gas passage.

    Abstract translation: 要解决的问题：提供一种热处理炉，其克服或减轻了沉积在气体排出路径的下游端附近的材料回流的问题，并且还提供可以安装在常规热处理炉中的衬套 （可能作为原来安装的内衬的替代品），以克服或减轻回流问题。 解决方案：热处理炉包括：具有中心轴线的一般钟形瓶外反应管; 以及用于容纳保持多个基板的晶片舟的开放式内部反应管。 内反应管基本上同轴地设置在外反应管内，从而在内反应管的外壁和外反应管的内壁之间限定气体通道。 内反应管的外壁和外反应管的内壁中的至少一个设置有从各壁径向突出到气体通道中的导流板。 版权所有（C）2012，JPO＆INPIT

    Method of processing solar cell
    77.
    发明专利
    Method of processing solar cell 审中-公开
    加工太阳能电池的方法

    公开(公告)号：JP2012009870A

    公开(公告)日：2012-01-12

    申请号：JP2011143508

    申请日：2011-06-13

    Applicant: Asm Internatl Nv ,  エーエスエム インターナショナル エヌ. ヴェー.ASM International N.V.

    Inventor： DE RIDDER CHRIS HE HEM ,  CLAES P BORNSTRA ,  HULTHEN ADRIAN ,  HOOSEN FRANK

    IPC: H01L21/205 ,  C23C16/458 ,  H01L31/04

    CPC classification number: H01L21/67303 ,  C23C16/45546 ,  C23C16/4587 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/67109 ,  H01L21/67313 ,  H01L21/67757 ,  H01L31/1864 ,  H01L31/1876 ,  Y02E10/547 ,  Y02P70/521

    Abstract: PROBLEM TO BE SOLVED: To provide an improved method of processing a thin flat plate type semiconductor substrate of a solar cell in a known furnace.SOLUTION: The method of processing the solar cell includes the steps of: preparing a vertical furnace 1 so as to receive an array mutually separated circular semiconductor wafers 6 for integrated circuit processing; forming process chamber loading constitution 14 for the solar cell substrates 6, with the size of the solar cell substrates 6 which are present successively along a first surface of an object to be processed being smaller than a corresponding size of the circular semiconductor wafers, so that an array 16 comprising the plurality of solar cell substrates 6 isolated from each other can be housed in a process chamber 10; loading the solar cell substrates 6 in the process chamber 10; and processing the solar cell substrates 6 in the process chamber 10.

    Abstract translation: 要解决的问题：提供一种在已知炉中加工太阳能电池的薄平板型半导体衬底的改进方法。 解决方案：处理太阳能电池的方法包括以下步骤：制备垂直炉1，以便接收用于集成电路处理的阵列相互分离的圆形半导体晶片6; 对于太阳能电池基板6的成形处理室装载构造14，其中沿着待处理物体的第一表面连续存在的太阳能电池基板6的尺寸小于圆形半导体晶片的相应尺寸，使得 包括彼此隔离的多个太阳能电池基板6的阵列16可以容纳在处理室10中; 将太阳能电池基板6装载在处理室10中; 并处理处理室10中的太阳能电池基板6。版权所有（C）2012，JPO＆INPIT

    Solar cell and method for manufacturing the same
    78.
    发明专利
    Solar cell and method for manufacturing the same 有权
    太阳能电池及其制造方法

    公开(公告)号：JP2011249813A

    公开(公告)日：2011-12-08

    申请号：JP2011126706

    申请日：2011-05-20

    Applicant: Asm Internatl Nv ,  エーエスエム インターナショナル エヌ. ヴェー.ASM International N.V.

    Inventor： PELAKES DEITEL

    IPC: H01L31/04

    CPC classification number: H01L31/068 ,  H01L21/02178 ,  H01L21/0228 ,  H01L31/02167 ,  H01L31/1868 ,  H01L31/1876 ,  Y02E10/547 ,  Y02P70/521

    Abstract: PROBLEM TO BE SOLVED: To efficiently manufacture a solar cell having a long, effective minority charge carrier lifetime (i.e. τ≥500 μs).SOLUTION: A method of manufacturing a solar cell having an effective minority charge carrier lifetime (τ) of at least 500 μs comprises: providing a semiconductor wafer; and passivating a surface of the wafer by ALD-depositing a metal oxide layer on the surface. The ALD depositing is performed by sequentially and alternately performing steps: (i) exposing the surface to a first precursor, resulting in a coverage of the surface with the first precursor, and (ii) exposing the surface to a second precursor, resulting in a coverage of the surface with the second precursor. At least one of the steps (i) and (ii) is stopped before the coverage of the surface reaches a saturation level.

    Abstract translation: 要解决的问题：为了有效地制造具有长的有效的少数电荷载流子寿命（即τ eff ≤500μs）的太阳能电池。 解决方案：制造具有至少500μs的有效少数电荷载流子寿命（τ eff ）的太阳能电池的方法包括：提供半导体晶片; 并通过在表面上沉积金属氧化物层来钝化晶片的表面。 ALD沉积通过依次和交替地执行步骤来执行：（i）将表面暴露于第一前体，导致表面与第一前体的覆盖，和（ii）将表面暴露于第二前体，导致 用第二个前体覆盖表面。 步骤（i）和（ii）中的至少一个在表面的覆盖达到饱和水平之前停止。 版权所有（C）2012，JPO＆INPIT

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