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    Imprint lithography
    71.
    发明专利
    Imprint lithography 有权
    IMPRINT LITHOGRAPHY

    公开(公告)号：JP2014103421A

    公开(公告)日：2014-06-05

    申请号：JP2014041529

    申请日：2014-03-04

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： SIMON KLAUS

    IPC: H01L21/027

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    Abstract: PROBLEM TO BE SOLVED: To provide a lithography capable of a high resolution imprint.SOLUTION: An imprint method is disclosed. In one example, separated first and second target regions made of an imprintable medium on a substrate are brought into contact with first and second templates, respectively, to form first and second imprints on the imprintable medium, and then the first and second templates are removed from the imprinted medium.

    Abstract translation: 要解决的问题：提供能够进行高分辨率印记的光刻。解决方案：公开了一种压印方法。 在一个示例中，分离的由可压印介质构成的分离的第一和第二目标区域分别与第一和第二模板接触，以在可压印介质上形成第一和第二印记，然后移除第一和第二模板 从印记媒体。

    Process variation detecting methods, angularly resolved scatterometers, lithographic systems, and lithographic cells
    73.
    发明专利
    Process variation detecting methods, angularly resolved scatterometers, lithographic systems, and lithographic cells 有权
    过程变异检测方法，角度分辨率计算器，光刻系统和光刻电池

    公开(公告)号：JP2014030048A

    公开(公告)日：2014-02-13

    申请号：JP2013207180

    申请日：2013-10-02

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： HUGO CRAMER ,  ARIE DEN BOEF ,  MEGENS HENRICUS ,  HENDRIK SMILDE ,  ANDRIANUS SCHELLEKENS ,  MICHAEL KUBIS

    IPC: H01L21/027

    CPC classification number: G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

    Abstract: PROBLEM TO BE SOLVED: To provide methods of detecting micro-loading and process effects on metrology targets.SOLUTION: A structure has at least one feature which has an asymmetry in a printed profile which varies as a function of the focus of a lithographic apparatus on a substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensity of the measured first and second portions of the spectra is measured and used to measure the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate.

    Abstract translation: 要解决的问题：提供检测计量目标的微载荷和过程效应的方法。解决方案：结构具有至少一个特征，其在印刷轮廓中具有不对称性，其随着光刻设备的焦点而变化 底物。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像。 第一图像使用非零阶衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 测量所测量的第一和第二部分光谱强度的比率并用于测量周期性结构轮廓的不对称性和/或提供焦点在基底上的指示。

    Imprint lithography apparatus and method
    75.
    发明专利
    Imprint lithography apparatus and method 有权
    IMPRINT LITHOGRAPHY APPARATUS和方法

    公开(公告)号：JP2014013915A

    公开(公告)日：2014-01-23

    申请号：JP2013169108

    申请日：2013-08-16

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： KRUIJT-STEGEMAN YVONNE WENDELA ,  JEUNINK ANDRE BERNARDUS ,  JOHANNES PETRUS MARTINUS BERNARDUS

    IPC: H01L21/027 ,  B29C59/02

    CPC classification number: G03F7/0002 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70716 ,  G03F7/70725 ,  G03F7/70766 ,  G03F7/70783

    Abstract: PROBLEM TO BE SOLVED: To prevent misalignment from residual strain in a substrate in a lithography apparatus.SOLUTION: An imprint lithography apparatus and manufacturing method can lead to mechanical stress being formed in a substrate to which an imprint pattern is being applied. This may cause strain within the substrate leading to misalignment of a subsequent pattern with an earlier pattern in a part of the substrate, which is strained. An apparatus and method is disclosed which allows stress relaxation in the substrate prior to further patterning in order to reduce, minimize or prevent such misalignment from residual strain. This is achieved by locally unclamping a portion of substrate (including arbitrarily the entire substrate) from a corresponding portion of a substrate holder so that mechanical stress leading to local strain may relax prior to further patterning. In order to overcome residual frictional force between the substrate and the substrate holder, the substrate and the substrate holder may be physically separated prior to further patterning.

    Abstract translation: 要解决的问题：为了防止光刻设备中的基板中的残余应变的不对准。解决方案：压印光刻设备和制造方法可以导致在施加印记图案的基板中形成机械应力。 这可能导致衬底内的应变导致随后的图案与基片的一部分中的较早的图案的未对准，其被应变。 公开了一种在进一步构图之前允许衬底中的应力松弛的装置和方法，以便减少，最小化或防止这种从残余应变的偏移。 这是通过从衬底保持器的相应部分局部松开衬底的一部分（包括任意整个衬底）来实现的，使得导致局部应变的机械应力在进一步图案化之前可能松弛。 为了克服衬底和衬底保持器之间的残余摩擦力，衬底和衬底保持器可以在进一步构图之前物理分离。

    Lithographic apparatus and device manufacturing method
    76.
    发明专利
    Lithographic apparatus and device manufacturing method 有权
    LITHOGRAPHIC装置和装置制造方法

    公开(公告)号：JP2013251580A

    公开(公告)日：2013-12-12

    申请号：JP2013187139

    申请日：2013-09-10

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： ROPS CORNELIUS MARIA ,  KEMPER NICOLAAS R ,  RIEPEN MICHEL

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70341

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus capable of at least reducing possibility of mixing of bubbles.SOLUTION: An immersion lithographic apparatus is disclosed. The immersion lithographic apparatus comprises: a fluid handling system for confining immersion liquid to be within a local space between a final element of a projection system and a substrate and/or a table; and a gas supply device for supplying gas whose solubility in the immersion liquid is higher than 5×10mol/kg, at a total pressure of 1 atm and 20°C into a region that adjoins the space.

    Abstract translation: 要解决的问题：提供能够至少降低气泡混合可能性的光刻设备。解决方案：公开了一种浸没式光刻设备。 浸没式光刻设备包括：用于将浸没液体限制在投影系统的最终元件与基板和/或台之间的局部空间内的流体处理系统; 以及用于将在浸液中的溶解度高于5×10mol / kg的气体的气体供给装置，在1atm和20℃的总压力下进入与该空间相邻的区域。

    Lithography device and method of compensating for intrinsic mode coupling
    77.
    发明专利
    Lithography device and method of compensating for intrinsic mode coupling 有权
    LITHOGRAPHY设备和内部模式耦合补偿方法

    公开(公告)号：JP2013222962A

    公开(公告)日：2013-10-28

    申请号：JP2013058790

    申请日：2013-03-21

    Applicant: Asml Holding Nv ,  エーエスエムエル ホールディング エヌ.ブイ. ,  Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： CHRISTOPHER CHARLES WARD ,  WILHELMUS VAN GERVEN MARK HENRICUS ,  THEODOR VAN GOCH BRAM PAUL

    IPC: H01L21/027 ,  H01L21/68

    CPC classification number: G03F7/709 ,  F16F15/002 ,  G03F7/70525 ,  G03F7/70725 ,  G03F7/70758 ,  G03F7/70775

    Abstract: PROBLEM TO BE SOLVED: To provide a lithography device capable of compensating for intrinsic mode coupling along another axial direction incurred by inputting a force or a position along one axial direction, a control method, and a multi-degree-of-freedom control system.SOLUTION: A lithography device includes a component and a positioning system which is coupled to the component in an operable manner and moves the component along a first axis. The positioning system measures a position of the component along a second axis or a third axis. The positioning system controls movement of the component to compensate for influences of intrinsic mode coupling between the movement of the component along the first axis and the measured position of the component along the second axis or the third axis. In some embodiments, the component is a reticle stage or a wafer stage.

    Abstract translation: 要解决的问题：提供一种光刻装置，其能够沿着沿一个轴向方向输入力或位置而引起的另一个轴向方向的固有模式耦合，控制方法和多自由度控制系统进行补偿。 解决方案：光刻设备包括部件和定位系统，其以可操作的方式联接到部件上并沿着第一轴线移动部件。 定位系统测量部件沿着第二轴或第三轴的位置。 所述定位系统控制所述部件的运动以补偿所述部件沿着所述第一轴线的运动与所述部件沿着所述第二轴线或所述第三轴线的测量位置之间的固有模式耦合的影响。 在一些实施例中，组件是掩模版阶段或晶片台。

    Substrate-topography-aware lithography modeling
    78.
    发明专利
    Substrate-topography-aware lithography modeling 有权
    基础 - 地形刻蚀建模

    公开(公告)号：JP2013162126A

    公开(公告)日：2013-08-19

    申请号：JP2013009062

    申请日：2013-01-22

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： RAN SONG

    IPC: H01L21/027

    CPC classification number: G03F7/705 ,  G03F7/70625 ,  G03F7/70666 ,  G06F17/5009

    Abstract: PROBLEM TO BE SOLVED: To provide a method for simulating an image formed within a resist layer on a substrate resulting from an incident radiation.SOLUTION: Described herein is a method for simulating an image formed within a resist layer on a substrate resulting from an incident radiation, the substrate having a first feature and a second feature which underlie the resist layer, the method comprising: simulating a first partial image using interaction between the incident radiation and the first feature without using interaction between the incident radiation and the second feature; simulating a second partial image using the interaction between the incident radiation and of the second feature without using the interaction between the incident radiation and the first feature; and computing the image formed within the resist layer from the first partial image and the second partial image; where the interaction between the incident radiation and the first feature is different from the interaction between the incident radiation and the second feature.

    Abstract translation: 要解决的问题：提供一种用于模拟由入射辐射产生的基板上的抗蚀剂层中形成的图像的方法。解决方案：本文描述了一种用于模拟在事件所产生的基板上的抗蚀剂层内形成的图像的方法 所述衬底具有第一特征和位于所述抗蚀剂层下面的第二特征，所述方法包括：使用所述入射辐射与所述第一特征之间的相互作用来模拟所述第一部分图像，而不使用所述入射辐射与所述第二特征之间的相互作用; 使用入射辐射和第二特征之间的相互作用来模拟第二部分图像，而不使用入射辐射和第一特征之间的相互作用; 以及从所述第一部分图像和所述第二部分图像计算形成在所述抗蚀剂层内的图像; 其中入射辐射与第一特征之间的相互作用不同于入射辐射与第二特征之间的相互作用。

    Lithographic apparatus with deformation sensor
    80.
    发明专利
    Lithographic apparatus with deformation sensor 有权
    具有变形传感器的平面设备

    公开(公告)号：JP2013131745A

    公开(公告)日：2013-07-04

    申请号：JP2012257929

    申请日：2012-11-26

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： JOHANNES HENDRIKUS MARIA SPRUIT ,  CATHARINA MARIA BEERENS RUUD ANTONIUS ,  RICHARD HENRICUS ADRIANUS VAN LIESHOUT ,  CRISTIAN DAN

    IPC: H01L21/027 ,  G01B11/16

    CPC classification number: G03F7/70783 ,  G03B27/522 ,  G03F7/7085

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus with an improved deformation sensor that allows measurement of a deformation of a part of the lithographic apparatus with sufficient accuracy.SOLUTION: There is disclosed a lithographic apparatus comprising a member susceptible to deformation and a deformation sensor for measuring a deformation of said member. The deformation sensor comprises: a first birefringence sensing element arranged to be subjected to stress dependent on the deformation of said member; a light system configured to transmit polarized light through the first birefringence sensing element, where said polarized light has a first polarization state prior to being transmitted through the first birefringence sensing element; a detector for detecting a second polarization state of the polarized light after being transmitted through the first birefringence sensing element; and a calculation unit to determine the deformation of said member on the basis of the first and second polarization states.

    Abstract translation: 要解决的问题：为光刻设备提供改进的变形传感器，其允许以足够的精度测量光刻设备的一部分的变形。解决方案：公开了一种光刻设备，其包括易于变形的部件和变形传感器 用于测量所述构件的变形。 变形传感器包括：第一双折射感测元件，被布置成受到取决于所述构件的变形的应力; 光系统，被配置为透射通过所述第一双折射感测元件的偏振光，其中所述偏振光在透射通过所述第一双折射感测元件之前具有第一偏振态; 检测器，用于在透射通过第一双折射检测元件之后检测偏振光的第二偏振状态; 以及计算单元，用于基于第一和第二极化状态来确定所述构件的变形。

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