Nitride semiconductor device and method of manufacturing the same
    73.
    发明专利
    Nitride semiconductor device and method of manufacturing the same 有权
    氮化物半导体器件及其制造方法

    公开(公告)号:JP2005129905A

    公开(公告)日:2005-05-19

    申请号:JP2004264839

    申请日:2004-09-13

    Abstract: PROBLEM TO BE SOLVED: To emit light in a plurality of colors having different light emission wavelengths from the same active layer in a nitride semiconductor light-emitting device that comprises gallium nitride semiconductor layers formed on a heterogeneous substrate. SOLUTION: A plurality of recesses 106 are formed by etch process on a first electrically conductive type (n-type) semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. In this example, the plane orientation of A plane is exposed. An active layer is grown in connection with the plane of this plane orientation, bottom of the recess, and C-plane of the upper surface of a non-recess portion. A second electrically conductive type (p-type) semiconductor layer is formed on the inner surface of the recess. With the active layer formed contiguously to the semiconductor layer in two or more plane orientations, a difference in growth rate causes a difference in thickness across the quantum well (active layer), thereby providing light emission of a plurality of colors having different light emission wavelength peaks. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题:在包含形成在异质衬底上的氮化镓半导体层的氮化物半导体发光器件中,从相同的有源层发射具有不同发光波长的多种颜色的光。 解决方案:通过蚀刻工艺在形成在衬底上的第一导电类型(n型)半导体层102上形成多个凹槽106,其间插入有缓冲层。 每个凹槽以与主C平面不同的平面取向曝光。 在该示例中,A平面的平面取向被暴露。 活性层与该平面取向的平面,凹部的底部和非凹部的上表面的C平面相连。 在凹部的内表面上形成第二导电型(p型)半导体层。 随着在两个或多个平面取向上与半导体层连续形成的有源层,生长速率的差异导致量子阱(有源层)之间的厚度差异,从而提供具有不同发光波长的多种颜色的发光 峰。 版权所有(C)2005,JPO&NCIPI

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