SPUTTERING DEVICE
    72.
    发明公开
    SPUTTERING DEVICE 审中-公开

    公开(公告)号:EP4333564A1

    公开(公告)日:2024-03-06

    申请号:EP22795770.1

    申请日:2022-04-26

    Abstract: A sputtering apparatus (10) includes: a first target holder (111) and a second target holder (112) holding a first target (T1) and a second target (T2) respectively such that their surfaces face each other; a substrate holder (16) provided on a side of a plasma generation region (R) which is a region between the first target (T1) and the second target (T2) respectively held by the first target holder (111) and the second target holder (112); a first main magnetic field generation unit (121) and a second main magnetic field generation unit (122) respectively provided on the back surface sides of the first target holder (111) and the second target holder (112), and configured to generate a first main magnetic field and a second main magnetic field respectively on surfaces of the first target (T1) and the second target (T2) held, in which magnets are disposed such that opposite poles face each other; a power supply configured to generate an electric field in a plasma generation region (R) by applying predetermined potentials to the first target holder (111) and the second target holder (112); a radio-frequency electromagnetic field generation unit (17) configured to generate a radio-frequency electromagnetic field in the plasma generation region (R), which is provided on a side of the plasma generation region (R) facing the substrate holder (16) with the plasma generation region (R) between them; and a plasma source gas introduction unit (15) configured to introduce a plasma source gas into the plasma generation region (R), wherein means for generating a magnetic field does not exist at the ends of the first target holder (111) and the second target holder (112) on a side of radio-frequency electromagnetic field generation unit (17).

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