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    Semiconductor component emitting and/or receiving electromagnetic radiation, and housing base for the component
    71.
    发明专利
    Semiconductor component emitting and/or receiving electromagnetic radiation, and housing base for the component 审中-公开
    半导体元件发射和/或接收电磁辐射，以及组件的外壳

    公开(公告)号：JP2011054986A

    公开(公告)日：2011-03-17

    申请号：JP2010247343

    申请日：2010-11-04

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： ARNDT KARLHEINZ ,  BOGNER GEORG ,  BRAUNE BERT ,  WAITL GUENTER

    IPC: H01L33/48 ,  H01L33/52 ,  H01L33/54

    CPC classification number: H01L33/486 ,  H01L33/52 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor component in which joining between a used encapsulant and a housing base has poor resistance to mechanical stress and a still risk of a layer separation of an encapsulant from the housing base is reduced. SOLUTION: A semiconductor component includes at least one semiconductor chip 1 that emits and/or receives radiation, the semiconductor chip 1 disposed in a recess 2 of a housing base 3. The recess 2 has: a chip well 21 in which the semiconductor chip 1 is fixed; and a trench 22 which runs at least partway around the chip well 21 inside the recess 2. The housing base 3 has a wall 23 between the chip well 21 and the trench 22. An apex of the wall, when viewed from a bottom face of the chip well, lies below a level of a surface of a housing body 3 from which the recess 2 leads into the housing body 3, and an encapsulant 4 extends outward from the chip well 21 over the wall into the trench 22. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供一种半导体部件，其中使用的密封剂和壳体基座之间的接合具有差的抗机械应力，并且减小了密封剂与壳体基底的层分离的风险。 解决方案：半导体部件包括发射和/或接收辐射的至少一个半导体芯片1，半导体芯片1设置在壳体基座3的凹部2中。凹部2具有：芯片阱21，其中 半导体芯片1固定; 以及沟槽22，其至少部分地围绕凹槽2内的芯片井21延伸。壳体基座3在芯片井21和沟槽22之间具有壁23。当从底部的底面观察时，壁的顶点 芯片阱位于壳体3的表面的水平面以下，凹部2从该主体3的表面引导到壳体3中，并且密封剂4从芯片井21向外延伸到壁上进入沟槽22中。 版权所有（C）2011，JPO＆INPIT

    Surface-mountable optoelectronic element
    73.
    发明专利
    Surface-mountable optoelectronic element 有权
    表面安装光电元件

    公开(公告)号：JP2011023770A

    公开(公告)日：2011-02-03

    申请号：JP2010248992

    申请日：2010-11-05

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： WAITL GUENTER ,  LUTZ ROBERT ,  BRUNNER HERBERT

    IPC: H01L33/48 ,  H01L31/02 ,  H01L33/58

    CPC classification number: H01L33/486 ,  H01L31/0203 ,  H01L31/02325 ,  H01L33/58 ,  H01L2224/48247 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: PROBLEM TO BE SOLVED: To improve the radiation characteristics of an optoelectronic SMT element including a base, an optoelectronic transmitter or receiver in a notch of the base, an inclined inner wall surface of the notch, a pouring substance in the notch, and an optical device for closing the notch; to provide effectively regulatable radiation characteristics and to reduce the costs of the element. SOLUTION: The optical device 16 has a base surface 17 in a center range, the base surface is continued to a ring-shaped supporting surface 19 retreated from the base surface and located on the outside of the base surface in a radius direction through a transition slope 18, the base surface is located in the notch based on the transition slope, and when the optical device is mounted on an uncured pouring substance 14, the base surface is brought into contact with the pouring substance on the whole surface, and the pouring substance is arranged between the inclined inner wall surface forming a reflector and the transition slope. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：为了提高包括基座的缺口中的基座，光电发射器或接收器的光电SMT元件的辐射特性，凹口的倾斜内壁表面，凹口中的倾倒物质， 以及用于封闭所述凹口的光学装置; 以提供有效的可调节辐射特性并降低元件的成本。 解决方案：光学装置16具有中心范围的基底表面17，基底表面延续到从基部表面退回的环形支撑表面19，并且位于基底表面的外侧，半径方向 通过过渡斜面18，基础面基于过渡坡度位于凹口中，当光学装置安装在未固化的倾倒物质14上时，基面与整个表面上的倾倒物质接触， 并且倾倒物质布置在形成反射器的倾斜内壁表面和过渡斜坡之间。 版权所有（C）2011，JPO＆INPIT

    Optoelectronic device and manufacturing method of optoelectronic device
    77.
    发明专利
    Optoelectronic device and manufacturing method of optoelectronic device 审中-公开
    光电器件的制造方法和光电器件的制造方法

    公开(公告)号：JP2009076911A

    公开(公告)日：2009-04-09

    申请号：JP2008239744

    申请日：2008-09-18

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： HEUSER KARSTEN ,  MALM NORWIN V

    IPC: H01L33/00

    CPC classification number: H01L33/52 ,  H01L33/50 ,  H01L51/5036 ,  H01L51/5256 ,  H01L51/5268 ,  H01L51/5275 ,  H01L2251/5315 ,  H01L2933/0041

    Abstract: PROBLEM TO BE SOLVED: To provide an optoelectronic device which includes a wavelength conversion layer, and a tier of layers of an emission discharge type. SOLUTION: The optoelectronic device includes a substrate, a first electrode arranged on the substrate, the tier of the layers of the emission discharge type which discharges electromagnetic primary emission when driving, and has an active region, a second electrode which is arranged on the tier of the layers of the emission discharge type, and is transmissive to the primary emission, and encapsulation equipment which is deposited on the second electrode. The encapsulation equipment includes a laminated body having at least one first barrier layer, and at least one first wavelength conversion layer which converts at least partially the primary emission to electromagnetic secondary emission. The encapsulation equipment is penetrable at least partially to the primary emission and/or the secondary emission. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种包括波长转换层和发射放电型层的光电器件。 光电子器件包括衬底，布置在衬底上的第一电极，在驱动时放电电磁一次发射的发射放电类型的层，并具有有源区，布置在第二电极 在发射放电类型的层上，并且对初级发射是透射的，以及沉积在第二电极上的封装设备。 封装设备包括具有至少一个第一阻挡层的层压体和至少部分地将初级发射转换成电磁二次发射的至少一个第一波长转换层。 封装设备至少部分地可渗透到初级发射和/或二次发射。 版权所有（C）2009，JPO＆INPIT

    Method for manufacturing light emitting diode light source with luminescence conversion layer
    79.
    发明专利
    Method for manufacturing light emitting diode light source with luminescence conversion layer 审中-公开
    用光致变色层制造发光二极管光源的方法

    公开(公告)号：JP2008219057A

    公开(公告)日：2008-09-18

    申请号：JP2008158177

    申请日：2008-06-17

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： BRAUNE BERT ,  BRUNNER HERBERT

    IPC: H01L33/38 ,  H01L33/50

    CPC classification number: H01L33/505 ,  H01L33/38 ,  H01L2224/11 ,  H01L2933/0016 ,  H01L2933/0041

    Abstract: PROBLEM TO BE SOLVED: To provide a method to achieve simple and inexpensive coating for a light emitting diode chip having front side electrical contact. SOLUTION: Before the chip is coated with luminescence conversion material, the entire wafer composite is fixedly mounted with its underside on a carrier, and the chip is singulated from the wafer composite in such a way that they continue to be held together on the carrier. A side edge of the singulated chip is partly at least coated with the luminescence conversion material at the time of coating the chip, and subsequently the chip is singulated as a light emitting diode light source from the composite of the substrate and the luminescence conversion material. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于实现具有前侧电接触的发光二极管芯片的简单且便宜的涂层的方法。 解决方案：在芯片涂有发光转换材料之前，整个晶片复合材料固定地安装在载体的下侧，并且芯片从晶片复合材料中分离，使得它们继续保持在一起 承运人 在涂覆芯片时，单片化芯片的侧边缘部分至少涂覆有发光转换材料，随后将芯片从基板和发光转换材料的复合材料中分离成发光二极管光源。 版权所有（C）2008，JPO＆INPIT

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