公开(公告)号：WO03023834A2

公开(公告)日：2003-03-20

申请号：PCT/GB0203464

申请日：2002-07-30

Applicant: UNIV GLASGOW ,  INTENSE PHOTONICS LTD ,  MARSH JOHN HAIG ,  HAMILTON CRAIG JAMES ,  KOWALSKI OLEK PETER ,  MCDOUGALL STEWART DUNCAN ,  LIU XUE FENG ,  QIU BOCANG

Inventor： MARSH JOHN HAIG ,  HAMILTON CRAIG JAMES ,  KOWALSKI OLEK PETER ,  MCDOUGALL STEWART DUNCAN ,  LIU XUE FENG ,  QIU BOCANG

IPC: H01S5/323 ,  H01L21/18 ,  H01L25/00 ,  H01L31/18 ,  H01L33/06 ,  H01S5/34

CPC classification number: B82Y20/00 ,  H01L21/182 ,  H01S5/3413

Abstract: There is disclosed an improved method of manufacturing an optical device using an impurity induced Quantum Well Intermixing (QWI) process. Reported QWI methods, and particularly Impurity Free Vacancy Diffusion (IFVD) methods, suffer from a number of disadvantages, eg the temperature at which Gallium Arsenide (GaAs) out-diffuses from the semiconductor material to the Silica (SiO>2

Abstract translation: 公开了使用杂质诱导量子阱混合（QWI）工艺制造光学器件的改进方法。 报告的QWI方法，特别是无杂质空闲扩散（IFVD）方法存在许多缺点，例如砷化镓（GaAs）从半导体材料扩散到二氧化硅（SiO 2）膜的温度。 因此，本发明提供一种制造光学装置的方法，包括至少一个量子阱（QW）的装置主体部分（5a），所述装置主体部分（5a）包括以下步骤：引起 与所述至少一个量子阱（QW）（10a）混合的杂质材料，其中所述杂质材料至少包括铜（Cu）。

公开(公告)号：WO0147951A3

公开(公告)日：2002-04-25

申请号：PCT/CA0001581

申请日：2000-12-22

Applicant: STEWART DUNCAN JOHN ,  AN GO GEN INC

Inventor： STEWART DUNCAN JOHN

IPC: A61K38/00 ,  C07K14/515 ,  C07K14/52 ,  C12N5/10 ,  C12N15/12 ,  C12N15/62

CPC classification number: C07K14/515 ,  A61K38/00 ,  C07K14/52

Abstract: Angiopoietin analogs capable of binding to and activating TIE2 receptors by dimerization thereof, the angiopoietin analogs being proteinaceous molecules having at least 2 angiopoietin-like TIE2 binding domains.

公开(公告)号：WO2010085227A1

公开(公告)日：2010-07-29

申请号：PCT/US2009/000518

申请日：2009-01-26

Applicant: HEWLETT-PACKARD COMPANY, L.P. ,  WILLIAMS, R., Stanley ,  YANG, Jianhua ,  STEWART, Duncan

Inventor： WILLIAMS, R., Stanley ,  YANG, Jianhua ,  STEWART, Duncan

IPC: H01L29/40 ,  H01L29/41 ,  H03K19/173 ,  H03K19/177

CPC classification number: G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/51 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/72 ,  G11C2213/73 ,  G11C2213/74 ,  H01L27/2463 ,  H01L29/8615 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/148

Abstract: Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.

Abstract translation: 本发明的各种实施例涉及将可重构二极管整流状态与非易失性忆阻转换组合的电子器件。 一方面，电子设备（210,230,240）包括夹在第一电极（104）和第二电极（106）之间的有源区（212）。 有源区域包括两个或更多个半导体层和至少一个能够选择性地定位在有源区域内以控制电荷载流子通过该器件的流动的掺杂剂。

公开(公告)号：WO2010082928A1

公开(公告)日：2010-07-22

申请号：PCT/US2009/031140

申请日：2009-01-15

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  PICKETT, Matthew D. ,  STEWART, Duncan

Inventor： PICKETT, Matthew D. ,  STEWART, Duncan

IPC: H01L27/115 ,  H01L21/8247 ,  H01L21/265

CPC classification number: H01L27/101 ,  G11C13/00 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/33 ,  G11C2213/77 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/148

Abstract: A memristive device (100) includes a first and a second electrode (110, 115); a silicon memristive matrix (105) interposed between the first electrode (110) and the second electrode (115); and a mobile dopant species (210, 215) within the silicon memristive matrix (105) which moves in response to a programming electrical field and remains substantially in place after the removal of the programming electrical field. A method for using a crossbar architecture (610) containing a silicon memristive matrix (105) includes: applying a programming electrical field by applying a voltage bias across a first conductor (602) and a second conductor (604); a silicon memristive matrix (105, 606) containing mobile dopants (210, 215) being interposed between the first conductor (602) and the second conductor (604), the programming voltage repositioning the mobile dopants (210, 215) within the silicon memristive matrix (105, 606); and reading a state of the silicon memristive matrix (105, 606) by applying a reading energy across the silicon memristive matrix (105, 606), the reading energy producing a measurable indication of the state of the silicon memristive matrix (105, 606).

Abstract translation: 忆阻器（100）包括第一和第二电极（110,115）; 插入在所述第一电极（110）和所述第二电极（115）之间的硅忆阻矩阵（105）; 以及在所述硅忆阻矩阵（105）内的移动掺杂剂物质（210,215），其响应于编程电场而移动并且在去除所述编程电场之后保持基本上就位。 一种使用包含硅忆阻矩阵（105）的交叉结构（610）的方法包括：通过跨第一导体（602）和第二导体（604）施加电压偏置来施加编程电场; 包含位于第一导体（602）和第二导体（604）之间的移动掺杂剂（210,215）的硅忆阻矩阵（105,606），所述编程电压重新定位硅忆阻器内的移动掺杂剂（210,215） 矩阵（105,606）; 以及通过在所述硅忆阻矩阵（105,606）上施加读取能量来读取所述硅忆阻矩阵（105,606）的状态，所述读取能量产生所述硅忆阻矩阵（105,606）的状态的可测量指示， 。

公开(公告)号：WO2010050937A1

公开(公告)日：2010-05-06

申请号：PCT/US2008/081567

申请日：2008-10-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  YANG, Jianhua ,  STEWART, Duncan ,  KUEKES, Philip, J. ,  TONG, William, M.

Inventor： YANG, Jianhua ,  STEWART, Duncan ,  KUEKES, Philip, J. ,  TONG, William, M.

IPC: H01L21/265 ,  H01L21/8247

CPC classification number: H01L27/10 ,  H01L21/2254 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1658 ,  H01L45/1675

Abstract: An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of dopant initiators or dopants localized at an interface between i) the first electrode and the active region, or ii) the second electrode and the active region, or iii) the active region and each of the first and second electrodes.

Abstract translation: 电驱动装置包括第一电极，第二电极和设置在第一和第二电极之间的有源区。 该器件还包括位于i）第一电极和有源区之间的界面处的掺杂剂引发剂或掺杂剂中的至少一种，或ii）第二电极和有源区，或iii）活性区和第一和 第二电极。

公开(公告)号：WO2009017770A3

公开(公告)日：2009-04-02

申请号：PCT/US2008009225

申请日：2008-07-30

Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  TAN MICHAEL ,  WANG SHIH-YUAN ,  STEWART DUNCAN ,  FATTAL DAVID

Inventor： TAN MICHAEL ,  WANG SHIH-YUAN ,  STEWART DUNCAN ,  FATTAL DAVID

IPC: H01S3/08 ,  H01S3/109

CPC classification number: H01S5/1075 ,  B82Y20/00 ,  G02B6/12007 ,  H01S5/026 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/34306

Abstract: Various embodiments of the present invention are related to microresonator systems and to methods of fabricating the microresonator systems. In one embodiment, a microresonator system (200) comprises a substrate (206) having a top surface layer (204) and at least one waveguide (214,216) embedded in the substrate and positioned adjacent to the top surface layer of the substrate. The microresonator system also includes a microresonator (202,402) having a top layer (218), an intermediate layer (222), a bottom layer (220), a peripheral region, and a peripheral coating (224). The bottom layer (220) of the microresonator is attached to and in electrical communication with the top surface layer (204) of the substrate. The microresonator is positioned so that at least a portion of the peripheral region is located above the at least one waveguide (214, 216). The peripheral coating (224) covers at least a portion of the peripheral surface and has a relatively lower index of refraction than the top, intermediate, and bottom layers of the microresonator.

Abstract translation: 本发明的各种实施例涉及微谐振器系统和制造微谐振器系统的方法。 在一个实施例中，微谐振器系统（200）包括具有顶表面层（204）和至少一个波导（214,216）的衬底（206），所述波导嵌入衬底中并且与衬底的顶表面层相邻定位。 微谐振器系统还包括具有顶层（218），中间层（222），底层（220），周边区域和周边涂层（224）的微谐振器（202,402）。 微谐振器的底层（220）附着于基底的顶表面层（204）并与之电连通。 微谐振器被定位成使得外围区域的至少一部分位于至少一个波导（214,216）的上方。 外围涂层（224）覆盖周边表面的至少一部分并且具有比微谐振器的顶层，中间层和底层低的折射率。

公开(公告)号：WO2009002524A2

公开(公告)日：2008-12-31

申请号：PCT/US2008007934

申请日：2008-06-25

Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  FATTAL DAVID ,  LI ZHIYONG ,  TONG WILLIAM ,  STEWART DUNCAN ,  BLACXSTOCK JASON

Inventor： FATTAL DAVID ,  LI ZHIYONG ,  TONG WILLIAM ,  STEWART DUNCAN ,  BLACXSTOCK JASON

IPC: G01J3/44

CPC classification number: G02B6/1226 ,  B82Y15/00 ,  B82Y20/00 ,  G01N21/35 ,  G01N21/554 ,  G01N21/658 ,  G02B5/008

Abstract: Various aspects of the prsent invention are directed to electric-field-enhancement structures (100) and detection apparatuses (600, 700, 800) that employ such electric-field-enhancement structures. In one aspect of the present invention, an electric-field-enhancement structure (100) includes a substrate (102) having a surface (104). The substrate (102) is capable of supporting a planar mode (114) having a planar-mode frequency. A plurality of nanofeatures (106) is associated with the surface (104), and each of nanofeatures (106) exhibits a localized-surface-plasmon mode (116) having a localized-surface-plasmon frequency approximately equal to the planar-mode frequency.

Abstract translation: 本发明的各个方面涉及采用这种电场增强结构的电场增强结构（100）和检测装置（600,700,800）。 在本发明的一个方面，电场增强结构（100）包括具有表面（104）的基底（102）。 基板（102）能够支撑具有平面模式频率的平面模式（114）。 多个纳米尺度（106）与表面（104）相关联，并且纳米尺度（106）中的每一个表现出具有近似等于平面模式频率的局部表面等离子体激元频率的局部表面等离子体模式（116） 。

公开(公告)号：WO2008156743A1

公开(公告)日：2008-12-24

申请号：PCT/US2008/007513

申请日：2008-06-16

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. ,  SANTORI, Charles ,  FATTAL, David ,  WU, Wei ,  BICKNELL, Robert ,  WANG, Shih-Yuan ,  WILLIAMS, R. Stanly ,  STEWART, Duncan ,  QUITORIANO, Nathaniel

Inventor： SANTORI, Charles ,  FATTAL, David ,  WU, Wei ,  BICKNELL, Robert ,  WANG, Shih-Yuan ,  WILLIAMS, R. Stanly ,  STEWART, Duncan ,  QUITORIANO, Nathaniel

IPC: G02B6/32

CPC classification number: H04B10/803 ,  G02B6/4206 ,  G02B6/43

Abstract: An optical interconnect (100, 200, 300, 400, 500, 645) has a plurality of optical sources (110, 360, 460, 560), a first lens (115, 225, 325, 425, 525, 625) configured to collimate optical beams (320, 350) from the plurality of optical sources (110, 360, 460. 560), a second lens (120, 230, 335, 435, 535, 640) configured to refocus the optical beams (320, 350), and a plurality of optical receivers (125, 365, 465, 565) configued to receive the refocused optical beams (320, 350) from the second lens (120, 230, 335, 435, 535, 640).

Abstract translation: 光互连（100,200,300,400,500,655）具有多个光源（110,360,460,560），第一透镜（115,225,325,425,525,625）被配置为 从多个光源（110,360,460,560）中校准光束（320,350）;被配置为重新聚焦光束（320,350）的第二透镜（120,230,335,435,535,640） ）和多个光接收器（125,365,465,565）被配置为从第二透镜（120,230,335,435,535,640）接收重新聚焦的光束（320,350）。

公开(公告)号：WO2008094642A1

公开(公告)日：2008-08-07

申请号：PCT/US2008/001279

申请日：2008-01-31

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. ,  HARTWELL, Peter ,  BEAUSOLEIL, Raymond ,  WILLIAMS, R., Stanley ,  STEWART, Duncan

Inventor： HARTWELL, Peter ,  BEAUSOLEIL, Raymond ,  WILLIAMS, R., Stanley ,  STEWART, Duncan

IPC: H01L27/15 ,  H01L21/02

CPC classification number: G02B6/4201 ,  G02B6/43 ,  H01S5/02

Abstract: One embodiment in accordance with the invention is an apparatus (100) that can include an optical circuit wafer (102) and an integrated circuit wafer (104). The optical circuit wafer and the integrated circuit wafer are bonded together by a wafer bonding process.

Abstract translation: 根据本发明的一个实施例是可以包括光电晶片（102）和集成电路晶片（104）的装置（100）。 光电晶片和集成电路晶片通过晶片接合工艺结合在一起。

公开(公告)号：WO2008054400A2

公开(公告)日：2008-05-08

申请号：PCT/US2006/043687

申请日：2006-11-08

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. ,  STEWART, Duncan ,  OHLBERG, Douglas, A. ,  WILLIAMS, Stanley, R. ,  KUEKES, Philip, J.

Inventor： STEWART, Duncan ,  OHLBERG, Douglas, A. ,  WILLIAMS, Stanley, R. ,  KUEKES, Philip, J.

IPC: G11C13/02 ,  H01L21/768 ,  H01L51/00

CPC classification number: G11C13/0009 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/77 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/142 ,  H01L45/143 ,  H01L45/146 ,  H01L51/0591

Abstract: A control layer (26, 26', 28, 28', 28") for use in a junction of a nanoscale electronic switching device (10) is disclosed. The control layer (26, 26', 28, 28', 28") includes a material that is chemically compatible with a connecting layer (16) and at least one electrode (12, 14) in the nanoscale switching device (10). The control layer (26, 26', 28, 28', 28") is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device (10).

Abstract translation: 公开了一种用于纳米级电子开关装置（10）的接合处的控制层（26,26'，28,28'，28“），控制层（26,26'，28,28'，28” ）包括与纳米级切换装置（10）中的连接层（16）和至少一个电极（12,14）化学相容的材料。 控制层（26,26'，28,28'，28“）适于在装置（10）的操作期间控制电化学反应路径，电物理反应路径及其组合中的至少一个。