公开(公告)号：WO2014036083A1

公开(公告)日：2014-03-06

申请号：PCT/US2013/056986

申请日：2013-08-28

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： SHUR, Michael ,  SHATALOV, Maxim, S. ,  BETTLES, Timothy, J. ,  BILENKO, Yuri ,  SMETONA, Saulius ,  DOBRINSKY, Alexander ,  GASKA, Remigijus

IPC: A23L3/28

CPC classification number: A23L3/28 ,  A23L3/003 ,  A23L3/3409 ,  A61L2/10 ,  A61L2/24

Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a sterilization operating configuration and a preservation operating configuration.

Abstract translation: 紫外线辐射指向一个区域内。 紫外线辐射源的目标波长范围和/或目标强度范围可以对应于包括灭菌操作配置和保存操作配置在内的多个可选操作配置中的至少一个。

公开(公告)号：WO2014011964A1

公开(公告)日：2014-01-16

申请号：PCT/US2013/050215

申请日：2013-07-12

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： LUNEV, Alexander ,  SHATALOV, Maxim, S. ,  DOBRINSKY, Alexander ,  SHUR, Michael ,  GASKA, Remigijus

IPC: H01L33/38 ,  H01L33/36 ,  H01L27/14

CPC classification number: H01L33/387 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01S5/32

Abstract: A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.

Abstract translation: 提供了与发光结构中的半导体层的接触。 触点可以包括由金属形成并由一组空隙分开的多个接触区域。 接触区域可以通过基于触点的半导体接触结构的属性集合和触点的特征接触长度尺度选择的特征距离彼此分离。 空隙可以被配置成增加接触的整体反射率或透明度。

公开(公告)号：WO2013158645A1

公开(公告)日：2013-10-24

申请号：PCT/US2013/036784

申请日：2013-04-16

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： SUN, Wenhong ,  DOBRINSKY, Alexander ,  SHATALOV, Maxim, S. ,  YANG, Jinwei ,  SHUR, Michael ,  GASKA, Remigijus

IPC: H01L33/04 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L21/02389 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/04

Abstract: A light emitting heterostructure including one or more fine structure regions is provided. The light emitting heterostructure can include a plurality of barriers alternating with a plurality of quantum wells. One or more of the barriers and/or quantum wells includes a fine structure region. The fine structure region includes a plurality of subscale features arranged in at least one of: a growth or a lateral direction.

Abstract translation: 提供了包括一个或多个精细结构区域的发光异质结构。 发光异质结构可以包括与多个量子阱交替的多个势垒。 一个或多个障碍物和/或量子阱包括精细结构区域。 精细结构区域包括以增长或横向方向中的至少一个布置的多个子量表特征。

公开(公告)号：WO2013126828A1

公开(公告)日：2013-08-29

申请号：PCT/US2013/027496

申请日：2013-02-22

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： GASKA, Remigijus ,  SHUR, Michael ,  YANG, Jinwei ,  DOBRINSKY, Alexander ,  SHATALOV, Maxim, S.

IPC: H01L33/36

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/401 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/737 ,  H01L29/778 ,  H01L29/7786 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01L33/405 ,  H01L2933/0016

Abstract: A solution for forming an ohmic contact to a semiconductor layer is provided. A masking material is applied to a set of contact regions on the surface of the semiconductor layer. Subsequently, one or more layers of a device heterostructure are formed on the non-masked region(s) of the semiconductor layer. The ohmic contact can be formed after the one or more layers of the device heterostructure are formed. The ohmic contact formation can be performed at a processing temperature lower than a temperature range within which a quality of a material forming any semiconductor layer in the device heterostructure is damaged.

Abstract translation: 提供了用于形成与半导体层的欧姆接触的解决方案。 掩模材料被施加到半导体层表面上的一组接触区域。 随后，在半导体层的非掩蔽区域上形成一层或多层器件异质结构。 欧姆接触可以在形成器件异质结构的一个或多个层之后形成。 欧姆接触形成可以在低于在器件异质结构中形成任何半导体层的材料的质量被损坏的温度范围的处理温度下进行。

公开(公告)号：WO2013028831A1

公开(公告)日：2013-02-28

申请号：PCT/US2012/052006

申请日：2012-08-23

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  SHATALOV, Maxim, S. ,  SHUR, Michael ,  BILENKO, Yuri ,  GASKA, Ignas ,  DOBRINSKY, Alexander ,  GASKA, Remigijus ,  BETTLES, Timothy, James

Inventor： SHATALOV, Maxim, S. ,  SHUR, Michael ,  BILENKO, Yuri ,  GASKA, Ignas ,  DOBRINSKY, Alexander ,  GASKA, Remigijus ,  BETTLES, Timothy, James

IPC: C02F1/32 ,  C02F7/00 ,  B01F3/04

CPC classification number: C02F1/325 ,  C02F1/001 ,  C02F2201/009 ,  C02F2201/3222 ,  C02F2201/3228 ,  Y02A20/212

Abstract: A solution for treating a fluid, such as water, is provided. The solution first removes a set of target contaminants that may be present in the fluid using a filtering solution. The filtered fluid enters a disinfection chamber where it is irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. An ultraviolet radiation source and/or the disinfection chamber can include one or more attributes configured to provide more efficient irradiation and/or higher disinfection rates.

Abstract translation: 提供了一种用于处理诸如水的流体的溶液。 该溶液首先使用过滤溶液去除可能存在于流体中的一组目标污染物。 过滤的流体进入消毒室，在那里用紫外线辐射照射，以损害可能存在于流体中的微生物。 紫外线辐射源和/或消毒室可以包括被配置为提供更有效的照射和/或更高的消毒率的一个或多个属性。

公开(公告)号：WO2012174367A3

公开(公告)日：2013-02-21

申请号：PCT/US2012042646

申请日：2012-06-15

Applicant: SENSOR ELECTRONIC TECHNOLOGY INC ,  SHATALOV MAXIM S ,  DOBRINSKY ALEXANDER ,  SHUR MICHAEL ,  GASKA REMIGIJUS

Inventor： SHATALOV MAXIM S ,  DOBRINSKY ALEXANDER ,  SHUR MICHAEL ,  GASKA REMIGIJUS

IPC: H01L33/20 ,  H01L33/22

CPC classification number: H01L33/20 ,  B82Y20/00 ,  H01L33/22 ,  H01L2933/0083 ,  H01L2933/0091 ,  H01S5/0224 ,  H01S5/34333

Abstract: An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.

Abstract translation: 提供了包括用于改善通过界面的辐射传播的粗糙度分量的界面。 该界面包括第一层的第一成型表面，其包括一组大的粗糙度部件，其提供具有第一特征标尺的第一成型表面的第一变型和第二层的第二成型表面，该第二成型表面包括一组小的粗糙度部件， 具有第二特征标尺的第二成型表面的第二变化。 第一特征刻度大约比第二特征刻度大一个数量级。 表面可以使用接合材料结合在一起，并且填料也可以存在于界面中。

公开(公告)号：WO2012112630A1

公开(公告)日：2012-08-23

申请号：PCT/US2012/025146

申请日：2012-02-15

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  SIMIN, Grigory ,  SHUR, Michael ,  GASKA, Remigijus

Inventor： SIMIN, Grigory ,  SHUR, Michael ,  GASKA, Remigijus

IPC: H01L29/772 ,  H01L21/335

CPC classification number: H01L29/7786 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/405

Abstract: A semiconductor device including a low conducting field-controlling element is provided. The device can include a semiconductor including an active region, and a set of contacts to the active region. The field-controlling element can be coupled to one or more of the contacts in the set of contacts. The field-controlling element can be formed of a low conducting layer having a sheet resistance between approximately 10 3 Ohms per square and approximately 10 7 Ohms per square. During direct current and/or low frequency operation, the field-controlling element can behave similar to a metal electrode. However, during high frequency operation, the field-controlling element can behave similar to an insulator.

Abstract translation: 提供了包括低导电场控制元件的半导体器件。 该器件可以包括半导体，其包括有源区，以及一组与有源区的接触。 场控制元件可以耦合到该组触点中的一个或多个触点。 场控元件可由低导电层形成，薄层电阻约为每平方103欧姆/平方欧姆/平方欧。 在直流和/或低频操作期间，场控元件可以类似于金属电极。 然而，在高频操作期间，场控元件可以表现得类似于绝缘体。

公开(公告)号：WO2012068066A3

公开(公告)日：2012-07-12

申请号：PCT/US2011060729

申请日：2011-11-15

Applicant: SENSOR ELECTRONIC TECHNOLOGY INC ,  GASKA REMIGIJUS ,  SHUR MICHAEL

Inventor： GASKA REMIGIJUS ,  SHUR MICHAEL

IPC: H01L21/28 ,  H01L21/328 ,  H01L29/86 ,  H01L33/00

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/417 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40

Abstract: An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.

Abstract translation: 提供与包括异质结构势垒层和与异质结构势垒层相邻的金属层的半导体层的欧姆接触。 异质结构势垒层可以在异质结构势垒层和半导体层的异质界面处形成用于接触的二维自由载气。 金属层被配置成与二维自由载气形成接触。

公开(公告)号：WO2011159993A3

公开(公告)日：2012-03-29

申请号：PCT/US2011040850

申请日：2011-06-17

Applicant: SENSOR ELECTRONIC TECHNOLOGY INC ,  GASKA REMIGIJUS ,  SHATALOV MAXIM S ,  SHUR MICHAEL

Inventor： GASKA REMIGIJUS ,  SHATALOV MAXIM S ,  SHUR MICHAEL

IPC: H01L33/04

CPC classification number: H01L33/04 ,  H01L33/06 ,  H01L33/10 ,  H01L33/22 ,  H01L33/385 ,  H01L33/405

Abstract: A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. The diode can include a blocking layer, which is configured so that a difference between an energy of the blocking layer and the electron ground state energy of a quantum well is greater than the energy of the polar optical phonon in the material of the light generating structure. The diode can include a composite contact, including an adhesion layer, which is at least partially transparent to light generated by the light generating structure and a reflecting metal layer configured to reflect at least a portion of the light generated by the light generating structure.

Abstract translation: 提供一种发光二极管，其包括n型接触层和与n型接触层相邻的发光结构。 光产生结构包括一组量子阱。 接触层和发光结构可以被配置成使得n型接触层的能量与量子阱的电子基态能量之间的差大于光的材料中的极性光学声子的能量 生成结构。 另外，发光结构可以被配置为使得其宽度与用于通过注入到光产生结构中的电子发射极性光学声子的平均自由程相当。 二极管可以包括阻挡层，其被配置为使得阻挡层的能量与量子阱的电子基态能量之间的差异大于光生成结构的材料中的极化光学声子的能量 。 二极管可以包括复合触点，其包括对由光产生结构产生的光至少部分透明的粘附层和被配置为反射由光产生结构产生的光的至少一部分的反射金属层。

公开(公告)号：WO2011069140A2

公开(公告)日：2011-06-09

申请号：PCT/US2010/059003

申请日：2010-12-04

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  SHATALOV, Maxim, S. ,  GASKA, Remigijus ,  YANG, Jinwei ,  SHUR, Michael

Inventor： SHATALOV, Maxim, S. ,  GASKA, Remigijus ,  YANG, Jinwei ,  SHUR, Michael

IPC: H01L21/265 ,  H01L29/778 ,  H01L33/00

CPC classification number: H01L29/122 ,  B82Y10/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/06 ,  H01L33/32

Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity corresponds to the target band discontinuity.

Abstract translation: 提供了用于设计和/或制造包括量子阱和相邻阻挡层的结构的解决方案。 量子阱和相邻势垒之间的目标能带不连续性被选择为与量子阱和/或势垒的掺杂剂的激活能量一致。 例如，可以选择目标价带不连续性，使得相邻阻挡层中掺杂剂的掺杂剂能级与量子阱的价能带边缘和/或价带能级中的自由载流子的基态能量一致 为量子阱。 可以形成量子阱和相邻势垒，使得实际能带不连续性对应于目标能带不连续性。