-
公开(公告)号：KR100999739B1
公开(公告)日：2010-12-08
申请号：KR1020080030966
申请日：2008-04-02
Applicant: 엘지이노텍 주식회사
Inventor： 문용태
CPC classification number: H01L33/38 , H01L33/02 , H01L33/14 , H01L33/22 , H01L33/382 , H01L33/40 , H01L33/42
Abstract: 실시 예에 따른 발광소자는, 제1 캐리어 주입층과, 제1 캐리어 주입층 위에 형성된 발광층과, 발광층 위에 형성된 보호층과, 보호층 위에 형성된 금속나노층과, 금속나노층 위에 형성된 제2 캐리어 주입층을 포함한다.
Abstract translation: 根据实施例的发光器件包括：第一载流子注入层，形成在第一载流子注入层上的发光层，形成在发光层上的保护层，形成在保护层上的金属纳米层， 的层。
-
公开(公告)号：KR100992743B1
公开(公告)日：2010-11-05
申请号：KR1020080134515
申请日：2008-12-26
Applicant: 엘지이노텍 주식회사
Inventor： 문용태
CPC classification number: H01L33/08 , H01L33/0095 , H01L33/22
Abstract: 실시예는 발광소자 및 그 제조방법에 관한 것이다.
실시예에 따른 발광소자는 제1 도전형 반도체층; 상기 제1 도전형 반도체층 일부에 형성된 희토류원소 주입층; 상기 제1 도전형 반도체층 상에 활성층; 상기 활성층 상에 제2 도전형 반도체층; 및 상기 제2 도전형 반도체층 상에 제2 기판;을 포함한다.
발광소자, 활성층, 발광효율Abstract translation: 实施例涉及发光器件及其制造方法。
-
公开(公告)号：KR1020090003384A
公开(公告)日：2009-01-12
申请号：KR1020070055360
申请日：2007-06-07
Applicant: 엘지전자 주식회사 , 엘지이노텍 주식회사
Inventor： 문용태
Abstract: The iii-nitride semiconductor light-emitting device is provided to reduce the compressive stress of the light-emitting layer and to improve the internal quantum efficiency of the emitting device. The iii-nitride semiconductor light-emitting device is comprised of the light-emitting layer(30) of the quantum well structure(20) and the electron hole implant layer(40), the N-type electron injection layer(10). The quantum well structure is made of The first quantum barrier layers(21), stress compliant layer(22), second quantum barrier layers(23), quantum-well layer(24) and the first quantum barrier layers. The stress releasing layer has the face direction lattice constant value between the quantum-well layer and the first quantum barrier layers.
Abstract translation: 提供了三价氮化物半导体发光器件以减小发光层的压缩应力并提高发光器件的内部量子效率。 该氮化硅半导体发光元件由量子阱结构（20）的发光层（30）和电子空穴注入层（40），N型电子注入层（10）构成。 量子阱结构由第一量子势垒层（21），应力柔性层（22），第二量子势垒层（23），量子阱层（24）和第一量子势垒层构成。 应力释放层在量子阱层和第一量子势垒层之间具有面向晶格常数值。
-
公开(公告)号：KR1020080040359A
公开(公告)日：2008-05-08
申请号：KR1020060108217
申请日：2006-11-03
Applicant: 엘지전자 주식회사 , 엘지이노텍 주식회사
Inventor： 문용태
IPC: H01L33/02
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/32
Abstract: A light emitting device having vertical topology and a method of making the same are provided to improve performance thereof by supplying the uniform amount of current in a current supply process. A light emitting device includes a first conductive type semiconductor layer(30), a light emitting layer(20) positioned on the first conductive type semiconductor, and a second conductive type semiconductor layer(10) positioned on the light emitting layer. The second conductive type semiconductor layer includes an etch barrier(40). A light extraction structure(50) is formed on the etch barrier. The light extraction structure is a pattern which is formed on the second conductive type semiconductor layer positioned on the etch barrier. The etch barrier is an AlxInyGa1-x-yN(0
Abstract translation: 提供具有垂直拓扑的发光器件及其制造方法，以通过在电流供给过程中提供均匀量的电流来提高其性能。 发光器件包括第一导电类型半导体层（30），位于第一导电类型半导体上的发光层（20）和位于发光层上的第二导电类型半导体层（10）。 第二导电型半导体层包括蚀刻阻挡层（40）。 在蚀刻阻挡层上形成光提取结构（50）。 光提取结构是形成在位于蚀刻屏障上的第二导电类型半导体层上的图案。 蚀刻势垒是Al x In y Ga 1-x-y N（0 <=（x，y）<= 1）层。
-
公开(公告)号：KR1020070109618A
公开(公告)日：2007-11-15
申请号：KR1020060042861
申请日：2006-05-12
Applicant: 엘지전자 주식회사 , 엘지이노텍 주식회사
Inventor： 문용태
Abstract: A vertical type LED and a method for making the same are provided to improve the performance of an optical device and a photoelectric device by using a conductive layer with high conductivity. A first conductive layer(200) is positioned on an upper surface of a first electrode. An active layer(300) is positioned on an upper surface of the first conductive layer. A second conductive semiconductor layer(400) is positioned on an upper surface of the active layer. The second conductive layer includes at least one semiconductor layer and at least one conductive semiconductor layer(230). A second electrode is positioned on an upper surface of the second conductive layer. The semiconductor layer and the conductive semiconductor layer are stacked alternately on at least a part of the second conductive layer.
Abstract translation: 提供了一种垂直型LED及其制造方法，以通过使用具有高导电性的导电层来提高光学器件和光电器件的性能。 第一导电层（200）位于第一电极的上表面上。 活性层（300）位于第一导电层的上表面上。 第二导电半导体层（400）位于有源层的上表面上。 第二导电层包括至少一个半导体层和至少一个导电半导体层（230）。 第二电极位于第二导电层的上表面上。 半导体层和导电半导体层交替堆叠在第二导电层的至少一部分上。
-
Patent Agency Ranking
公开(公告)号：KR102249630B1
公开(公告)日：2021-05-10
申请号：KR1020140104274
申请日：2014-08-12
Applicant: 엘지이노텍 주식회사
Abstract: 실시예는발광소자, 발광소자의제조방법, 발광소자패키지및 조명시스템에관한것이다. 실시예에따른발광소자는기판; 상기기판상면에배치되는제1 질화물반도체층; 상기기판상에배치되는비정질층; 상기제1 질화물반도체층상에제1 도전형반도체층; 상기제1 도전형반도체층상에활성층; 및상기활성층상에제2 도전형반도체층;을포함할수 있다.
-
-
-
-
公开(公告)号：KR101854851B1
公开(公告)日：2018-06-14
申请号：KR1020110085987
申请日：2011-08-26
Applicant: 엘지이노텍 주식회사
CPC classification number: H01L33/06 , H01L33/0079 , H01L33/22 , H01L33/32
Abstract: 실시예는양자장벽및 양자우물을포함하는활성층; 상기활성층의일측에배치되는제1 도전형반도체층; 및상기활성층의다른일측에배치되는제2 도전형반도체층을포함하고, 상기제1 도전형반도체층또는상기제2 반도체층은베리어층을포함하고, 상기베리어층은복수의장벽층들및 상기장벽층들사이에배치되는기저층을포함하고, 상기장벽층들의에너지밴드갭이증가하는제1 구간및 상기장벽층들의에너지밴드갭이감소하는제2 구간을포함하는발광소자를제공한다.
-
-
-
-
-
-
-
-
-
Search Results
135
records
(took 0.027 seconds)
