SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MAKING SAME
    74.
    发明公开
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MAKING SAME 审中-公开
    半导体照明系统及其制造方法

    公开(公告)号:EP2232590A2

    公开(公告)日:2010-09-29

    申请号:EP08858438.8

    申请日:2008-11-07

    CPC classification number: H01L33/08 H01L33/0079 H01L33/32 H01L33/34

    Abstract: Light emitting devices and methods of fabricating the same are disclosed. The light emitting device includes a light emitting diode (LED) that emits blue or UV light and is attached to a semiconductor construction. The semiconductor construction includes a re-emitting semiconductor construction that includes at least one layer of a II-VI compound and converts at least a portion of the emitted blue or UV light to longer wavelength light. The semiconductor construction further includes an etch-stop construction that includes an AlInAs or a GaInAs compound. The etch-stop is capable of withstanding an etchant that is capable of etching InP.

    BOOSTER FILMS FOR SOLAR PHOTOVOLTAIC SYSTEMS
    79.
    发明公开
    BOOSTER FILMS FOR SOLAR PHOTOVOLTAIC SYSTEMS 审中-公开
    VERSTÄRKERFILMEFÜRPHOTOVOLTAIKSYSTEME

    公开(公告)号:EP2721644A2

    公开(公告)日:2014-04-23

    申请号:EP12726309.3

    申请日:2012-05-31

    Abstract: We describe stacked photovoltaic modules, and components thereof, in which at least one booster cell is combined with at least one primary cell in a stacked configuration. The booster cell may be in the form of a polycrystalline film disposed on a transparent substrate, such as a glass substrate, and the film may be patterned to form multiple booster cells. The booster cell includes an n-type layer and a p-type layer; the n-type layer may include polycrystalline zinc sulfide (ZnS), and the p-type layer may include polycrystalline zinc telluride (ZnTe). The n-type layer may have a band gap energy of at least 3.5 eV, and the p-type layer may have a band gap energy of at least 2 or at least 2.2 eV, or in a range from 2.2 to 2.3 eV. An intrinsic layer, also comprising polycrystalline ZnTe, may reside between the n-type and p-type layers.

    Abstract translation: 我们描述堆叠的光伏模块及其组件,其中至少一个升压电池与堆叠配置中的至少一个主电池组合。 升压电池可以是设置在诸如玻璃基板的透明基板上的多晶膜的形式,并且该膜可以被图案化以形成多个增压电池。 升压电池包括n型层和p型层; n型层可以包括多晶硫化锌(ZnS),p型层可以包括多晶碲化锌(ZnTe)。 n型层可以具有至少3.5eV的带隙能量,并且p型层可以具有至少2或至少2.2eV的带隙能量,或者在2.2至2.3eV的范围内。 也包含多晶ZnTe的本征层可位于n型层和p型层之间。

    WHITE LIGHT ELECTROLUMINESCENT DEVICES WITH ADJUSTABLE COLOR TEMPERATURE
    80.
    发明公开
    WHITE LIGHT ELECTROLUMINESCENT DEVICES WITH ADJUSTABLE COLOR TEMPERATURE 审中-公开
    ELEKTROLUMINESZENTE WEISSLICHTELEMENTE MIT EINSTELLBARER FARBTEMPERATUR

    公开(公告)号:EP2449856A1

    公开(公告)日:2012-05-09

    申请号:EP10730307.5

    申请日:2010-06-25

    Abstract: Solid state lighting devices include a first luminescent element (612) emitting light having a first spectrum, and a second luminescent element (614) emitting light having a second spectrum. The first luminescent element includes a first electroluminescent element (612a) that emits a first pump light, and a first light converting element (612b) that converts at least some of the first pump light to a first re-emitted light component. The second luminescent element includes a second electroluminescent element (614a) that emits a second pump light, and a second light converting element (614b) that converts at least some second pump light to a second re-emitted light component. The first and/or second light converting element includes a potential well. Light emitted by the first and second luminescent elements combine to provide a device output, which can approximate a Planckian locus over a range of color temperatures and exhibit a color rendering index of at least 60, 70, or 80.

    Abstract translation: 固体照明装置包括发射具有第一光谱的光的第一发光元件(612)和发射具有第二光谱的光的第二发光元件(614)。 第一发光元件包括发射第一泵浦光的第一电致发光元件(612a)和将第一泵浦光中的至少一些转换成第一再发射光分量的第一光转换元件(612b)。 第二发光元件包括发射第二泵浦光的第二电致发光元件(614a)和将至少一些第二泵浦光转换成第二再发射光分量的第二光转换元件(614b)。 第一和/或第二光转换元件包括势阱。 由第一和第二发光元件发射的光组合在一起提供一个装置输出,其可以在一个颜色温度范围内逼近普朗克斯轨迹,并显示至少60,70或80的显色指数。

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