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    ANORDNUNG MIT EINEM HALBLEITERCHIP UND EINER LICHTLEITERSCHICHT
    71.
    发明公开
    ANORDNUNG MIT EINEM HALBLEITERCHIP UND EINER LICHTLEITERSCHICHT 审中-公开
    与半导体芯片和光纤层排列

    公开(公告)号：EP2130072A2

    公开(公告)日：2009-12-09

    申请号：EP08706792.2

    申请日：2008-01-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： HERRMANN, Siegfried ,  HAHN, Berthold ,  SORG, Joerg ,  GRUBER, Stefan

    IPC: G02B6/00 ,  F21V8/00

    CPC classification number: G02B6/0055 ,  G02B6/0018 ,  G02B6/0051 ,  G02B6/0073 ,  G02B6/0076

    Abstract: The invention relates to an arrangement comprising a semiconductor chip (1) which is designed to emit light during operation as well as a cover layer (2) that lies across from a light-emitting surface of the semiconductor chip (1) such that light emitted by the semiconductor chip (1) penetrates into the cover layer (2). According to the invention, said arrangement is characterized in that a light-deflecting structure is provided in an area of the cover layer (2) that overlaps the chip (1). Said light-deflecting structure deflects the light that penetrates into the cover layer (2) in the direction of the longitudinal extension of the cover layer (2). Furthermore, the coating (2) acts as an optical waveguide and is designed to emit the light in a distributed manner across the top surface of the cover layer (2).

    BELEUCHTUNGSMODUL UND VERFAHREN ZU DESSEN HERSTELLUNG
    73.
    发明公开
    BELEUCHTUNGSMODUL UND VERFAHREN ZU DESSEN HERSTELLUNG 有权
    发光器相关半导体部件

    公开(公告)号：EP1597776A2

    公开(公告)日：2005-11-23

    申请号：EP04702280.1

    申请日：2004-01-15

    Applicant: Osram Opto Semiconductors GmbH

    Inventor： HÄRLE, Volker ,  HAHN, Berthold ,  LUGAUER, Hans-Jürgen

    IPC: H01L33/00

    CPC classification number: H01L33/486 ,  H01L25/0753 ,  H01L33/22 ,  H01L33/507 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/16195 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: The invention relates to a lighting module comprising at least one thin-film light-emitting diode chip, which is placed on a chip support provided with electrical supply conductors and which has a first and a second electrical connection side and as well as an epitaxially produced semiconductor layered construction. The semiconductor layered construction has an n-conducting semiconductor layer, a p-conducting semiconductor layer, and a region, which is situated between these two semiconductor layers, produces electromagnetic radiation, and which is placed on a support. In addition, the lighting module comprises a reflective layer. This reflective layer is located on a main surface facing the support and reflects at least a portion of the electromagnetic radiation, which is produced in the semiconductor layered construction, back into said the semiconductor layered construction. The semiconductor layered construction comprises at least one semiconductor layer having at least one microstructured rough surface. The decoupling surface of the thin-film light-emitting diode is defined, in essence, by a main surface facing away from the reflective layer and does not contain housing material such as potting material or encapsulating material.

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