公开(公告)号：EP2554019B1

公开(公告)日：2017-06-21

申请号：EP11720049.3

申请日：2011-03-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WIRTH, Ralph ,  VARGA, Horst

IPC: H05B33/08 ,  H05B37/02

CPC classification number: H05B37/02 ,  H05B33/0872

公开(公告)号：EP2269221B1

公开(公告)日：2017-03-08

申请号：EP09724749.8

申请日：2009-01-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WIRTH, Ralph ,  BUTENDEICH, Rainer

IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/0304

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14694 ,  H01L31/02162 ,  H01L31/03046

公开(公告)号：EP1334524B1

公开(公告)日：2014-10-01

申请号：EP01996891.6

申请日：2001-11-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WIRTH, Ralph

IPC: H01L33/20 ,  H01L33/38

CPC classification number: H01L33/20 ,  H01L33/14 ,  H01L33/32

公开(公告)号：EP2606515A1

公开(公告)日：2013-06-26

申请号：EP11748330.5

申请日：2011-08-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WIRTH, Ralph

IPC: H01L33/56 ,  H01L33/44 ,  H01L25/075

Abstract: In at least one embodiment of the optoelectronic semiconductor component (1), the latter comprises an optoelectonic semiconductor chip (2). The semiconductor component (1) furthermore comprises at least one scattering body (34) comprising a radiation-transmissive matrix material (3) and scattering particles (4) composed of a particle material embedded therein. The scattering body (34) is disposed downstream of the semiconductor chip (2). In the event of a temperature change, a difference in refractive index between the matrix material (3) and the particle material changes. At a temperature of 300 K, the difference in refractive index between the matrix material (3) and the particle material is at most 0.15.

公开(公告)号：EP2269221A1

公开(公告)日：2011-01-05

申请号：EP09724749.8

申请日：2009-01-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WIRTH, Ralph ,  BUTENDEICH, Rainer

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14694 ,  H01L31/02162 ,  H01L31/03046

Abstract: The invention specifies an optoelectronic radiation detector (100) having a plurality of detector elements (1, 2, 3) for generating signals, wherein the detector elements each have a spectral sensitivity distribution, a detector element (1) has a basic detector element, the spectral sensitivity distribution of the basic detector element (1) has a lower limiting wavelength, another detector element (2, 3) has a filter layer structure (13) with at least one filter layer (14, 15), the sensitivity distribution of the other detector element (2, 3) has a maximum at a maximum wavelength, and wherein the filter layer structure is designed in such a manner that the filter layer structure absorbs radiation at wavelengths which are shorter than the maximum wavelength and longer than the lower limiting wavelength.

公开(公告)号：EP2232593A2

公开(公告)日：2010-09-29

申请号：EP08863055.3

申请日：2008-12-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WIRTH, Ralph ,  MUSCHAWECK, Julius

IPC: H01L33/00

CPC classification number: H01L33/58 ,  G02B27/28 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

Abstract: The invention relates to a semiconductor component emitting polarized radiation with a first polarization direction. The semiconductor component comprises a chip housing, a semiconductor chip and a chip-remote polarization filter.

公开(公告)号：EP2218115A1

公开(公告)日：2010-08-18

申请号：EP08855324.3

申请日：2008-11-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WIRTH, Ralph

IPC: H01L33/00

CPC classification number: H01L33/58 ,  H01L33/44

Abstract: The present invention relates to an illumination device comprising a chip housing (2) having at least one depression (5) limited by a reflective inner surface (4). The illumination device further comprises at least one radiation-emitting semiconductor chip (3) having a chip surface (9) disposed in the depression and an angle filter element (6) integrated into the chip housing at a distance from the chip and disposed downstream of the semiconductor chip in a preferred direction (v), wherein the reflective inner surface is at least ten times as large as the chip surface.

公开(公告)号：EP1929551A2

公开(公告)日：2008-06-11

申请号：EP06818008.2

申请日：2006-09-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： PLÖSSL, Andreas ,  WIRTH, Ralph

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/10 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to an optoelectronic semiconductor chip which emits electromagnetic radiation from its front side (7), comprising: a semiconductor layered construction (1) with an active region (4) suited for generating electromagnetic radiation, and; a separately made TCO supporting substrate (10), which is placed on the semiconductor layered construction, has a material from the group of transparent conducting oxides (TCO) and which mechanically supports the semiconductor layered construction (1).

公开(公告)号：EP1771890A2

公开(公告)日：2007-04-11

申请号：EP05760046.2

申请日：2005-06-15

Applicant: Osram Opto Semiconductors GmbH

Inventor： PIETZONKA, Ines ,  SCHMID, Wolfgang ,  WIRTH, Ralph

IPC: H01L33/00

CPC classification number: H01L33/105 ,  H01L33/465

Abstract: The invention relates to a luminescent diode (1) comprising an active area (7) which emits electromagnetic radiation in the direction of the main radiation (15). The active area (7) in the direction of the main radiation (15) is arranged downstream from a reflection-reducing layer sequence (16). Said reflection-reducing layer sequence contains a DBR mirror which is formed from at least one pair of layers (11, 12), a reflection coating (9) which is arranged downstream from the DBR-mirror (13) in the direction of the main radiation (15) and an intermediate layer (14) which is arranged between the DBR-mirror (13) and the reflection coating (9).

公开(公告)号：EP1658643A1

公开(公告)日：2006-05-24

申请号：EP04762553.8

申请日：2004-07-30

Applicant: Osram Opto Semiconductors GmbH

Inventor： STEIN, Wilhelm ,  WINDISCH, Reiner ,  WIRTH, Ralph ,  PIETZONKA, Ines

IPC: H01L33/00

CPC classification number: H01L33/40 ,  H01L33/02

Abstract: The invention relates to a radiation emitting semi-conductor element with a semi-conductor body, comprising a first main surface (5), a second main surface (9) and a semi-conductor layer sequence (4) with an active zone (7) generating electromagnetic radiation. The semi-conductor layer sequence (4) is arranged between the first and the second main surface (5,9), a first current expansion layer (3) is arranged on the first main surface (5) and is joined in an electrically conducting manner to the semi-conductor layer sequence (4) and a second current expansion layer (10) is arranged on the second main surface (9) and is joined in an electrically conducting manner to the semi-conductor layer sequence (4).