公开(公告)号：US11670540B2

公开(公告)日：2023-06-06

申请号：US17190004

申请日：2021-03-02

Applicant: Soitec ,  COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

Inventor： Didier Landru ,  Nadia Ben Mohamed ,  Oleg Kononchuk ,  Frédéric Mazen ,  Damien Massy ,  Shay Reboh ,  François Rieutord

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/263

CPC classification number: H01L21/76254 ,  H01L21/263 ,  H01L21/324 ,  H01L21/76251

Abstract: Substrates may include a useful layer affixed to a support substrate. A surface of the useful layer located on a side of the useful layer opposite the support substrate may include a first region and a second region. The first region may have a first surface roughness, may be located proximate to a geometric center of the surface, and may occupy a majority of an area of the surface. The second region may have a second, higher surface roughness, may be located proximate to a periphery of the surface, and may occupy a minority of the area of the surface.

公开(公告)号：US20220319910A1

公开(公告)日：2022-10-06

申请号：US17597583

申请日：2020-07-13

Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES ,  Soitec

Inventor： Vincent Larrey ,  François Rieutord ,  Jean-Michel Hartmann ,  Frank Fournel ,  Didier Landru ,  Oleg Kononchuk ,  Ludovic Ecarnot

IPC: H01L21/762 ,  H01L21/02

Abstract: A process for hydrophilic bonding first and second substrates, comprising: —bringing the first and second substrates into contact to form a bonding interface between main surfaces of the first and second substrates, and —applying a heat treatment to close the bonding interface. The process further comprises, before the step of bringing into contact, depositing, on the main surface of the first and/or second substrate, a bonding layer comprising a non-metallic material that is permeable to dihydrogen and that has, at the temperature of the heat treatment, a yield strength lower than that of at least one of the materials of the first substrate and of the second substrate located at the bonding interface. The layer has a thickness between 1 and 6 nm, and the heat treatment is carried out at a temperature lower than or equal to 900° C., and preferably lower than or equal to 600° C.

公开(公告)号：US20220181173A1

公开(公告)日：2022-06-09

申请号：US17435899

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/67 ,  H01L21/762

Abstract: A system for fracturing a plurality of wafer assemblies, one of the wafers of each assembly comprising a plane of weakness and each assembly comprising a peripheral lateral groove comprises: a cradle for keeping the assemblies of the plurality of assemblies spaced apart and parallel to one another, along a storage axis; a separation device for applying separating forces in the peripheral groove of an assembly arranged in a fracture zone of the separating device, the separating force aiming to separate the wafers of the assembly from one another so as to initiate its fracture at the plane of weakness; and a drive device configured to move along the storage axis of the cradle opposite the separating device so as to successively place an assembly of the cradle in the fracture zone of the separation device.

公开(公告)号：US11349065B2

公开(公告)日：2022-05-31

申请号：US15769690

申请日：2016-10-17

Applicant: Soitec

Inventor： Didier Landru

IPC: H01L41/313 ,  H03H9/02 ,  H01L41/083 ,  H01L41/053 ,  H01L41/08

Abstract: A method for manufacturing a hybrid structure comprising an effective layer of piezoelectric material having an effective thickness and disposed on a supporting substrate having a substrate thickness and a thermal expansion coefficient lower than that of the effective layer includes: a) a step of providing a bonded structure comprising a piezoelectric material donor substrate and the supporting substrate, b) a first step of thinning the donor substrate to form a thinned layer having an intermediate thickness and disposed on the supporting substrate, the assembly forming a thinned structure; c) a step of heat treating the thinned structure at an annealing temperature; and d) a second step, after step c), of thinning the thinned layer to form the effective layer. The method also comprises, prior to step b), a step a′) of determining a range of intermediate thicknesses that prevent the thinned structure from being damaged during step c).

公开(公告)号：US20220157651A1

公开(公告)日：2022-05-19

申请号：US17439300

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762 ,  H01L21/265 ,  H01L21/78

Abstract: A method for transferring a useful layer to a carrier substrate, includes the following steps: a) providing a donor substrate including a buried weakened plane; b) providing a carrier substrate; c) joining the donor substrate, by its front face, to the carrier substrate along a bonding interface so as to form a bonded structure; d) annealing the bonded structure in order to apply a weakening thermal budget thereto and to bring the buried weakened plane to a defined level of weakening; and e) initiating a splitting wave in the weakened plane by applying a stress to the bonded structure, the splitting wave self-propagating along the weakened plane to result in the useful layer being transferred to the carrier substrate. The splitting wave is initiated when the bonded structure is subjected to a temperature between 150° C. and 250° C.

公开(公告)号：US11276605B2

公开(公告)日：2022-03-15

申请号：US16473475

申请日：2018-01-10

Applicant: Soitec

Inventor： Oleg Kononchuk ,  Didier Landru ,  Nadia Ben Mohamed

IPC: H01L21/762 ,  H01L21/324

Abstract: A method of fabricating a semiconductor substrate includes the following activities: a) providing a donor substrate with a weakened zone inside the donor substrate, the weakened zone forming a border between a layer to be transferred and the rest of the donor substrate, b) attaching the donor substrate to a receiver substrate, the layer to be transferred being located at the interface between the donor substrate and the receiver substrate; c) detaching the receiver substrate along with the transferred layer from the rest of the donor substrate, at the weakened zone; and d) at least one step of smoothing the surface of the transferred layer, wherein the semiconductor substrate obtained from step c) is kept, at least from the moment of detachment until the end of the smoothing step, in a non-oxidizing inert atmosphere or in a mixture of non-oxidizing inert gases. Semiconductor substrates are fabricated using such a method.

公开(公告)号：US10910250B2

公开(公告)日：2021-02-02

申请号：US15170532

申请日：2016-06-01

Applicant: Soitec

Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

IPC: H01L21/683 ,  H01L21/48 ,  H01L21/762

Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

公开(公告)号：US20170331501A1

公开(公告)日：2017-11-16

申请号：US15531976

申请日：2015-09-17

Applicant: Soitec

Inventor： Oleg Kononchuk ,  Didier Landru ,  Christophe Figuet

IPC: H04B1/03 ,  H01M4/66 ,  H01L21/02 ,  H01L21/762 ,  H01L41/047 ,  H01L21/28

CPC classification number: H04B1/03 ,  H01L21/02167 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28282 ,  H01L21/76254 ,  H01L21/76297 ,  H01L41/0477 ,  H01M4/663

Abstract: A structure for radiofrequency applications includes: a semiconducting supporting substrate, and a trapping layer arranged on the supporting substrate. The trapping layer includes a higher defect density than a predetermined defect density. The predetermined defect density is the defect density beyond which the electric resistivity of the trapping layer is no lower 10,000 ohm·cm over a temperature range extending from −20° C. to 120° C.

公开(公告)号：US20170062236A1

公开(公告)日：2017-03-02

申请号：US15350290

申请日：2016-11-14

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk

IPC: H01L21/322 ,  H01L21/762

CPC classification number: H01L21/3225 ,  H01L21/3226 ,  H01L21/324 ,  H01L21/7624

Abstract: This disclosure relates to a method for dissolving a silicon dioxide layer in a structure, including, from the back surface thereof to the front surface thereof, a supporting substrate, the silicon dioxide layer and a semiconductor layer, the dissolution method being implemented in a furnace in which structures are supported on a support, the dissolution method resulting in the diffusion of oxygen atoms included in the silicon dioxide layer through the semiconductor layer and generating volatile products, and the furnace including traps suitable for reacting with the volatile products, so as to reduce the concentration gradient of the volatile products parallel to the front surface of at least one structure.

Abstract translation: 本公开涉及一种将二氧化硅层溶解在结构中的方法，包括从其后表面到其前表面的支撑衬底，二氧化硅层和半导体层，该溶解方法在炉中实施 其中结构支撑在载体上，溶解方法导致二氧化硅层中包含的氧原子扩散通过半导体层并产生挥发性产物，并且该炉包括适于与挥发性产物反应的阱，以便 降低与至少一个结构的前表面平行的挥发性产物的浓度梯度。

公开(公告)号：US20160368259A1

公开(公告)日：2016-12-22

申请号：US15256265

申请日：2016-09-02

Applicant: Soitec

Inventor： Didier Landru ,  Christophe Figuet

IPC: B32B43/00 ,  H01L21/683 ,  H01L21/762

CPC classification number: B32B43/006 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/76251 ,  H01L2221/6834 ,  H01L2221/68381

Abstract: A process for separating at least two substrates comprising at least two separation interfaces along one of the interfaces includes, before inserting a blade between the substrate, damaging at least one portion of a peripheral region of a chosen one of the interfaces, then inserting the blade and partially parting the substrates, and applying a fluid in a space between the parted substrates while the blade remains inserted therebetween, and decreasing a rupture energy of the chosen interface by stress corrosion involving breaking of siloxane bonds present at the interface.