公开(公告)号：US20180174838A1

公开(公告)日：2018-06-21

申请号：US15833685

申请日：2017-12-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Hiraku ISHIKAWA ,  Yoshimasa WATANABE ,  Syuhei YONEZAWA

IPC: H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  C23C16/511 ,  C23C16/38 ,  C23C16/46 ,  C23C16/44

CPC classification number: H01L21/0332 ,  C23C16/38 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/511 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32449 ,  H01J2237/182 ,  H01J2237/3321 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/11551 ,  H01L27/11578

Abstract: There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

公开(公告)号：US09991097B2

公开(公告)日：2018-06-05

申请号：US15793856

申请日：2017-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomohito Komatsu ,  Shigenori Ozaki ,  Yutaka Fujino ,  Jun Nakagomi

IPC: H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/3244

Abstract: A plasma processing apparatus includes a chamber; a mounting table configured to mount thereon a target object in the chamber; a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber; a first gas introduction unit configured to introduce a first gas into the chamber from the ceiling wall; and a second gas introduction unit configured to introduce a second gas into the chamber from a predetermined height position between the ceiling wall and the mounting table. The second gas introduction unit has a plurality of nozzles extending from the ceiling wall toward the mounting table and arranged on a same circumference at a regular interval. Each of the nozzles discharges the second gas toward a nozzle adjacent thereto.

公开(公告)号：US09633821B2

公开(公告)日：2017-04-25

申请号：US15051816

申请日：2016-02-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi Kaneko ,  Toshihiko Iwao ,  Satoru Kawakami

IPC: H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32311 ,  H01J37/244 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32238 ,  H01J37/32266 ,  H01J37/32935 ,  H01J37/3299

Abstract: Disclosed is a microwave plasma processing apparatus including: a processing container configured to define a processing space; a microwave generator configured to generate microwaves; a distributor configured to distribute the microwaves to a plurality of waveguides; an antenna installed in the processing container and to radiate the microwaves distributed to the plurality of waveguides to the processing space; a monitor unit configured to monitor a voltage of each of the plurality of waveguides; a storage unit configured to store a difference between a monitor value of the voltage monitored by the monitor unit and a predetermined reference value of the voltage and a control value of a distribution ratio of the distributor corresponding to the difference; and a control unit configured to acquire the control value of the distribution ratio of the distributor from the storage unit and to control the distribution ratio of the distributor.

公开(公告)号：US09564296B2

公开(公告)日：2017-02-07

申请号：US15063849

申请日：2016-03-08

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Soonam Park ,  Dmitry Lubomirsky ,  Hideo Sugai

IPC: H01J7/24 ,  H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32229 ,  H01J7/24 ,  H01J19/80 ,  H01J37/244 ,  H01J37/32201 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32935 ,  H01J37/3299 ,  H05B41/16

Abstract: A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.

Abstract translation: 系统提供径向波导中微波的后匹配控制。 该系统包括径向波导和提供具有共同频率的第一和第二微波信号的信号发生器。 信号发生器响应于校正信号来调节第一和第二信号之间的相位偏移。 该系统还包括第一和第二电子设备组，每个电子组件放大第一和第二微波信号中相应的一个。 该系统将放大的第一和第二微波信号传输到径向波导中，并将放大的微波信号的阻抗与由波导呈现的阻抗相匹配。 该系统还包括设置在波导内的至少两个监控天线。 信号控制器从监控天线接收模拟信号，至少基于模拟信号确定数字校正信号，并将校正信号发送到信号发生器。

公开(公告)号：US20160307765A1

公开(公告)日：2016-10-20

申请号：US15196284

申请日：2016-06-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ze Shen ,  Tetsuo Ono ,  Hisao Yasunami

IPC: H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J37/32201 ,  H01L21/02532

Abstract: A dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film is provided. The laminated film can include Si layers and SiGe layers alternately and repeatedly laminated. Each of the SiGe layers can be plasma-etched with plasma generated by a pulse-modulated radio frequency power using NF3 gas.

Abstract translation: 提供了一种用于相对于层叠膜中的每个Si层选择性地各Siige层蚀刻每个SiGe层的干蚀刻方法。 层叠膜可以交替地层叠Si层和SiGe层。 可以使用NF 3气体通过脉冲调制射频功率产生的等离子体等离子体蚀刻每个SiGe层。

公开(公告)号：US09299537B2

公开(公告)日：2016-03-29

申请号：US14221132

申请日：2014-03-20

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Soonam Park ,  Dmitry Lubomirsky ,  Hideo Sugai

IPC: H01J7/24 ,  H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32229 ,  H01J7/24 ,  H01J19/80 ,  H01J37/244 ,  H01J37/32201 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32935 ,  H01J37/3299 ,  H05B41/16

Abstract: A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.

Abstract translation: 系统提供径向波导中微波的后匹配控制。 该系统包括径向波导和提供具有共同频率的第一和第二微波信号的信号发生器。 信号发生器响应于校正信号来调节第一和第二信号之间的相位偏移。 该系统还包括第一和第二电子设备组，每个电子组件放大第一和第二微波信号中相应的一个。 该系统将放大的第一和第二微波信号传输到径向波导中，并将放大的微波信号的阻抗与由波导呈现的阻抗相匹配。 该系统还包括设置在波导内的至少两个监控天线。 信号控制器从监控天线接收模拟信号，至少基于模拟信号确定数字校正信号，并将校正信号发送到信号发生器。

公开(公告)号：US09293302B2

公开(公告)日：2016-03-22

申请号：US14180981

申请日：2014-02-14

Applicant: GasPlas AS

Inventor： Philip John Risby ,  Dale Pennington

IPC: H01J25/50 ,  H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32357 ,  H05H1/30 ,  H05H1/34 ,  H05H1/46 ,  H05H2001/3478 ,  H05H2001/4622

Abstract: A method and device for processing a gas by forming microwave plasmas of the gas. The gas that is to be processed is set in a two or three co-axial vortex flow inside the device and exposed to a microwave field to form the plasma in the inner co-axial vortex flow, which subsequently is expelled as a plasma afterglow through an outlet of the device.

Abstract translation: 一种通过形成气体的微波等离子体来处理气体的方法和装置。 要处理的气体被设置在装置内部的两个或三个同轴涡流中并暴露于微波场以在内部同轴涡流中形成等离子体，其随后被排出为等离子体余辉 设备的出口。

公开(公告)号：US20160032450A1

公开(公告)日：2016-02-04

申请号：US14779488

申请日：2014-02-25

Applicant: NEOCOAT SA

Inventor： David Rats ,  Christophe Provent

IPC: C23C16/27 ,  B81C1/00 ,  H01L21/02 ,  H01J37/32 ,  C01B31/06

CPC classification number: C23C16/274 ,  B81C1/00373 ,  C01B32/25 ,  C23C16/045 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32293 ,  H01J37/32403 ,  H01J37/32678 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01L21/02115 ,  H01L21/02274

Abstract: The present invention relates to a method for depositing nanocrystalline diamond using a diamond vapor deposition facility which includes: a vacuum reactor including a reaction chamber connected to a vacuum source; a plurality of plasma sources arranged along a matrix that is at least two-dimensional in the reaction chamber; and a substrate holder arranged in the reactor, said method being characterized in that the deposition is carried out at a temperature of 100 to 500° C.

Abstract translation: 本发明涉及使用金刚石气相沉积设备沉积纳米晶金刚石的方法，该方法包括：真空反应器，包括连接到真空源的反应室; 沿反应室中至少二维的矩阵排列的多个等离子体源; 以及布置在反应器中的衬底保持器，所述方法的特征在于沉积在100-500℃的温度下进行。

公开(公告)号：US20150144265A1

公开(公告)日：2015-05-28

申请号：US14611728

申请日：2015-02-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka Fujino ,  Atsushi Ueda ,  Shigenori Ozaki ,  Junichi Kitagawa

IPC: H01J37/32 ,  C23C16/511

CPC classification number: H01J37/32201 ,  C23C16/511 ,  H01J37/32211 ,  H01J37/32238 ,  H01J37/32431 ,  H05H1/46 ,  H05H2001/463

Abstract: A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.

Abstract translation: 等离子体处理装置包括将微波引入处理室的微波引入装置。 微波引入装置包括多个安装在天花板的多个开口中的微波透射板。 微波传输板布置在平行于安装台的安装表面的一个虚拟平面上，其中微波传输板安装在相应的开口中。 微波透射板包括第一至第三微波透射板。 第一至第三微波透射板以这样的方式布置，使得第一微波透射窗口的中心点与第二微波透射窗口的中心点之间的距离变为等于或近似等于第二微波透射窗口的中心点之间的距离 第一微波发射窗口和第三微波发射窗口的中心点。

公开(公告)号：US08961735B2

公开(公告)日：2015-02-24

申请号：US13425872

申请日：2012-03-21

Applicant: Yutaka Fujino ,  Atsushi Ueda ,  Shigenori Ozaki ,  Junichi Kitagawa

Inventor： Yutaka Fujino ,  Atsushi Ueda ,  Shigenori Ozaki ,  Junichi Kitagawa

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32201 ,  C23C16/511 ,  H01J37/32211 ,  H01J37/32238 ,  H01J37/32431 ,  H05H1/46 ,  H05H2001/463

Abstract: A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.

Abstract translation: 等离子体处理装置包括将微波引入处理室的微波引入装置。 微波引入装置包括多个安装在天花板的多个开口中的微波透射板。 微波传输板布置在平行于安装台的安装表面的一个虚拟平面上，其中微波传输板安装在相应的开口中。 微波透射板包括第一至第三微波透射板。 第一至第三微波透射板以这样的方式布置，使得第一微波透射窗口的中心点与第二微波透射窗口的中心点之间的距离变为等于或近似等于第二微波透射窗口的中心点之间的距离 第一微波发射窗口和第三微波发射窗口的中心点。