公开(公告)号：EP2380190A2

公开(公告)日：2011-10-26

申请号：EP10700719.7

申请日：2010-01-20

Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

Inventor： BAGDAHN, Jörg ,  BOHNE, Alexander ,  SCHÖNFELDER, Stephan ,  FISCHER, Carola

IPC: H01L21/302

CPC classification number: H01L21/302 ,  H01L21/0201 ,  H01L21/324 ,  H01L31/18

Abstract: The present invention relates to a method of enhancing the strength of a semiconductor wafer or semiconductor chip, the semiconductor wafers being sliced from an ingot or cut from a foil and preprocessed in one or several preprocessing steps prior to further processing steps for generating semiconductor elements. In the proposed method at least one annealing step is performed in addition to the one or several preprocessing steps and processing steps. With the proposed method the fracture strength of semiconductor wafers can be significantly enhanced thus allowing the use of semiconductor wafers with a higher degree of damages and increasing the yield of the whole wafer processing.

公开(公告)号：EP0525455B1

公开(公告)日：1998-09-30

申请号：EP92111576.2

申请日：1992-07-08

Applicant: SHIN-ETSU HANDOTAI COMPANY LIMITED

Inventor： Netsu, Shigeyoshi ,  Tomizawa, Shinichi

IPC: H01L21/322 ,  H01L21/304

CPC classification number: H01L21/0201 ,  H01L21/02016 ,  H01L21/3221

公开(公告)号：EP2928700B1

公开(公告)日：2018-09-12

申请号：EP13860728.8

申请日：2013-12-06

Applicant: AIXTRON SE

Inventor： WILLNER, Bruce, Ira

IPC: B44C3/08 ,  B28B19/00

CPC classification number: B32B37/24 ,  B32B38/08 ,  B32B38/10 ,  B32B2037/243 ,  B32B2037/246 ,  C01B32/184 ,  C01B32/194 ,  H01L21/0201 ,  H01L21/67092 ,  H01L21/67132

Abstract: A method is disclosed which includes: forming at least one layer of material on at least part of a surface of a first substrate, wherein a first surface of the at least one layer of material is in contact with the first substrate thereby defining an interface; attaching a second substrate to a second surface of the at least one layer of material; forming bubbles at the interface; and applying mechanical force; whereby the second substrate and the at least one layer of material are jointly separated from the first substrate. Related arrangements are also described.

公开(公告)号：EP2928700A4

公开(公告)日：2016-06-22

申请号：EP13860728

申请日：2013-12-06

Applicant: GRAPHENE FRONTIERS LLC

Inventor： WILLNER BRUCE IRA

IPC: B44C3/08 ,  B28B19/00

CPC classification number: B32B37/24 ,  B32B38/08 ,  B32B38/10 ,  B32B2037/243 ,  B32B2037/246 ,  C01B32/184 ,  C01B32/194 ,  H01L21/0201 ,  H01L21/67092 ,  H01L21/67132

公开(公告)号：EP2826065A1

公开(公告)日：2015-01-21

申请号：EP13729416.1

申请日：2013-03-09

Applicant: Süss Microtec Lithography GmbH

Inventor： GEORGE, Gregory ,  LUTTER, Stefan

IPC: H01L21/683 ,  H01L21/67

CPC classification number: B32B37/0046 ,  B32B37/1284 ,  B32B37/18 ,  B32B2307/202 ,  B32B2457/14 ,  H01L21/0201 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10T156/17

Abstract: A method for temporary bonding first and second wafers includes, applying a first adhesive layer upon a first surface of a first wafer and then curing the first adhesive layer. Next, applying a second adhesive layer upon a first surface of a second wafer. Next, inserting the first wafer into a bonder module and holding the first wafer by an upper chuck assembly so that its first surface with the cured first adhesive layer faces down. Next, inserting the second wafer into the bonder module and placing the second wafer upon a lower chuck assembly so that the second adhesive layer faces up and is opposite to the first adhesive layer. Next, moving the lower chuck assembly upwards and bringing the second adhesive layer in contact with the cured first adhesive layer, and then curing the second adhesive layer.

公开(公告)号：EP2312618A3

公开(公告)日：2014-03-12

申请号：EP10187469.1

申请日：2010-10-13

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Barr, Robert K ,  Chan, Raymond

IPC: H01L21/306 ,  H01L31/0236

CPC classification number: H01L21/30604 ,  H01L21/0201 ,  H01L21/02052 ,  H01L31/18

Abstract: A method of simultaneously cleaning inorganic and organic contaminants from semiconductor wafers and micro-etching the semiconductor wafers. After the semiconductor wafers are cut or sliced from ingots, they are contaminated with cutting fluid as well as metal and metal oxides from the saws used in the cutting process. Aqueous alkaline cleaning and micro-etching solutions containing alkaline compounds and mid-range alkoxylates are used to simultaneously clean and micro-etch the semiconductor wafers.

公开(公告)号：EP2312618B1

公开(公告)日：2016-02-10

申请号：EP10187469.1

申请日：2010-10-13

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Barr, Robert K ,  Chan, Raymond

IPC: H01L21/306 ,  H01L31/0236 ,  H01L31/18

CPC classification number: H01L21/30604 ,  H01L21/0201 ,  H01L21/02052 ,  H01L31/18

公开(公告)号：EP2928700A1

公开(公告)日：2015-10-14

申请号：EP13860728.8

申请日：2013-12-06

Applicant: Graphene Frontiers, LLC

Inventor： WILLNER, Bruce, Ira

IPC: B44C3/08 ,  B28B19/00

CPC classification number: B32B37/24 ,  B32B38/08 ,  B32B38/10 ,  B32B2037/243 ,  B32B2037/246 ,  C01B32/184 ,  C01B32/194 ,  H01L21/0201 ,  H01L21/67092 ,  H01L21/67132

Abstract: A method is disclosed which includes: forming at least one layer of material on at least part of a surface of a first substrate, wherein a first surface of the at least one layer of material is in contact with the first substrate thereby defining an interface; attaching a second substrate to a second surface of the at least one layer of material; forming bubbles at the interface; and applying mechanical force; whereby the second substrate and the at least one layer of material are jointly separated from the first substrate. Related arrangements are also described.

公开(公告)号：EP2545582A4

公开(公告)日：2014-07-09

申请号：EP11754183

申请日：2011-03-11

Applicant: SINMAT INC ,  UNIV FLORIDA

Inventor： SINGH RAJIV K ,  ARJUNAN ARUL CHAKKARAVARTHI ,  SINGH DEEPIKA

IPC: H01L21/20 ,  C30B25/18 ,  C30B29/36 ,  H01L21/02

CPC classification number: H01L21/0201 ,  C30B25/186 ,  C30B29/36 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/30608 ,  H01L21/30617 ,  H01L21/30625 ,  H01L29/1608 ,  H01L29/2003

公开(公告)号：EP1053831A4

公开(公告)日：2002-01-23

申请号：EP99970350

申请日：1999-10-12

Applicant: SHINETSU HANDOTAI KK

Inventor： OTAKA TOSHIAKI ,  FUKAMI TERUAKI

IPC: B24C11/00 ,  H01L21/304

CPC classification number: H01L21/0201 ,  B24C11/00 ,  B24C11/005

Abstract: A sandblasting agent which can prevent fouling by metal ions; and a method of sandblasting a silicon wafer with the agent. The method comprises using a sandblasting agent containing a chelating agent. The chelating agent is selected, for example, among the following (1) to (4) and salts of these. (1) Nitrilotriacetic acid (NTA); (2) Ethylenediaminetetraacetic acid (EDTA); (3) Diethylenediamine-N,N,N'',N''-pentaacetic acid (DTPA); (4) Cyclohexanediaminetetraacetic acid (CyDTA).