Abstract:
PROBLEM TO BE SOLVED: To provide a converter system in which control of a fault current occurring in the case of a partial fault can be improved.SOLUTION: A converter system 1 includes a phase voltage source 2, n partial converter systems 3.1, ..., and 3.n, wherein n is 1 or larger and, when n is equal to 1, the partial converter system 3.1 is connected to the phase voltage source 2 at a connection point A and, when n is larger than 1, a plurality of partial converter systems 3.1, ..., and 3.n are connected to the phase voltage source 2 at the connection point A. Furthermore, a power switch 4 is connected in series between the phase voltage source 2 and the connection point A. An interruption element 5 is connected in series among the phase voltage source 2, the power switch 4, and the connection point A to rapidly switch off the fault current which flows in the partial converter systems 3.1, ..., and 3.n.
Abstract:
PROBLEM TO BE SOLVED: To provide a control method for multilevel converter capable of reducing many voltages and currents sensed.SOLUTION: A converter 1 comprises an active stage 2 for converting the AC input voltage uat the AC input into an intermediate DC voltage U, a DC/DC converter 3 for converting the intermediate DC voltage Uinto the output DC voltage Uat the DC output, and having resonance transformers 32, 33 formed of a resonance circuit 32 and a transformer 33, and a control unit 5 configured to operate the active stage 2 based only on the output DC voltage Uof the DC/DC converter 3, the input voltage uand the input current of the converter 1, and to operate the DC/DC converter 3 in the open loop mode.
Abstract translation:要解决的问题:提供一种能够减少感测到的许多电压和电流的多电平转换器的控制方法。 解决方案:A转换器1包括用于将AC输入端的 SB>中的AC输入电压u Z SB>,用于将中间直流电压U Z SB>转换成输出DC电压U 的DC / DC转换器3, SB>,并且具有由谐振电路32和变压器33构成的谐振变压器32,33,以及控制单元5,其被配置为仅基于输出DC电压U 输出 SB>, SB>中的输入电压u 和转换器1的输入电流,并操作DC / DC转换器 3在开环模式。 版权所有(C)2013,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a power semiconductor unit, a power semiconductor module, and a module assembly which have long-life electrical and thermal connection between the power semiconductor device and a base plate.SOLUTION: A power semiconductor unit has: a metal attachment base 6; a base plate 2 having a molybdenum layer 4; and a power semiconductor device 3 electrically and thermally coupled to the upper surface side of the base plate. The metal attachment base of the base plate is disposed between the power semiconductor device and the molybdenum layer, and the molybdenum layer prevents a high resistance intermetallic phase from being formed between itself and the semiconductor device.
Abstract:
PROBLEM TO BE SOLVED: To enable improved contact between a base plate and a heat sink and provide enhanced durability.SOLUTION: This invention relates to a base plate 34, particularly to the base plate 34 for a power module. The base plate 34 includes a base material 38 formed by a metal, particularly aluminum, and at least two reinforcement materials 42 are provided in the base material 38 so as to be located next to each other at the base plate 34. Further, the reinforcement materials 42 are separated from each other at the base plate 34.
Abstract:
PROBLEM TO BE SOLVED: To provide a winding type transformer core in which a bonding process is simplified during manufacture, and cutting amount and grinding amount for manufacturing an E plate are reduced.SOLUTION: In a winding type transformer core, a plurality of thin band-like amorphous iron sheets stacked coaxially around at least one central axis are provided, and a lower yoke portion, an upper yoke portion, and at least two leg portions are provided, to provide a module type plate-like support structure. The support structure is bonded perpendicularly to the central axis, on the side of both surfaces of the lower yoke portion as well as on the side of both surfaces of the leg portions, with adjoining iron sheets bonded together by their outside edges. The module type plate-like support structure includes at least two plate-like modules, on each surface side of the core portion which belongs to. They include at least one core loop made from magnetic material, connected each other by first or second plug-in type connection.
Abstract:
PROBLEM TO BE SOLVED: To provide a high voltage switch having a long service life, with high operation reliability in spite of requiring little operating energy.SOLUTION: In this gas-insulation high voltage switch, an arc contact 31, which is one of the two arc contacts 21, 31, is displaceably supported against the action of a spring 33 to which tension is imparted previously. When a contact arrangement is closed, the free ends of the two arc contacts 21, 31 are supported on each other, and when the contact arrangement is opened, the two arc contacts are separated. In this process an arc zone L accommodating a compressed arc gas is generated, and when a short circuit current is blocked, a piston/cylinder system 60 connected to the arc zone L produces power to suppress a repulsive force of the spring 33 to which tension is imparted previously, with the use of pressure of an arc gas compressed in the arc zone L, in order to prevent the arc contact 21 from returning against the action of the spring 33 to which tension is imparted previously.
Abstract:
PROBLEM TO BE SOLVED: To provide a power diode improving a blocking capacity and a method for producing such a device. SOLUTION: The power diode 1 includes a second conductive type second layer 10 arranged in a central region 22 and a third conductive layer 16 arranged on the second layer 10 on the first main-side 8 of a first conductive type first layer 2. The power diode 1 further has a fourth conductive layer 14 arranged on the first layer 2 on the second main-side 12 on the reverse side. The power diode 1 further includes a junction termination region 24 surrounding the periphery of the second layer 10 by a second conductive type self-contained sub-region 26. The power diode 1 further has a second conductive type self-contained spacer sub-region 36 and a life control region 34 between the second layer 10 and the junction termination region 24. A fault reducing a carrier life is limited in the central region 22 while such a fault is not implanted into the junction termination region 24. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a structure and a method of manufacturing a fast recovery diode. SOLUTION: A fast recovery diode 1 is provided with a first conduction-type base layer 2 having a cathode side 23 and an anode side 24 opposite to the cathode 23. A second conduction-type anode buffer layer 41 having a first depth and a first maximum doping concentration is arranged at the anode side 24. Further, a second conduction-type anode contact layer 42 having a second depth deeper than the first depth and a second maximum doping concentration higher than the first maximum doping concentration is arranged at the anode side 24. At a breakdown voltage, a space charge area of an anode junction is placed at a third depth between the first and the second depths. Between the second and the third depths lies a defective layer 43 disposed with a defective peak. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To enable to increase switching speed and/or reduce energy of required driving operation. SOLUTION: A circuit breaker comprises a puffer volume 9 and at least one filling valve 16 structured to allow a flow of gas into the puffer volume 9 upon expansion of the same. A closing member 18 is biased in a direction against the flow of gas emitting from the puffer volume 9 such that the filling valve 16 remains open while the pressure accumulated within the puffer volume 9 remains below a given threshold. This allows to keep the pressure in the puffer volume 9 low under low current switching conditions, thereby decreasing the tendency for supersonic flow in the insulating nozzle. COPYRIGHT: (C)2008,JPO&INPIT