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公开(公告)号：JP2010199576A
公开(公告)日：2010-09-09
申请号：JP2010027166
申请日：2010-02-10
Inventor： NOIRAY JEROME , GRANNEMAN ERNST H A
IPC: H01L21/316 , H01L29/78
CPC classification number: C23C8/04 , C23C8/10 , H01L21/02238 , H01L21/02249 , H01L21/28247 , H01L21/3144 , H01L21/31662
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method that prevents oxidation of an exposed metal-containing material of an integrated circuit when a part of silicon is selectively oxidized. SOLUTION: The silicon and metal-containing material are exposed portions of a partially-fabricated integrated circuit and may form part of, e.g., a transistor. The silicon and metal-containing material are oxidized in an atmosphere containing an oxidant and a reducing agent. In some embodiments, the reducing agent is present at a concentration of about 10 vol% or less. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：提供当硅的一部分被选择性氧化时防止集成电路的暴露的含金属材料的氧化的制造方法。 解决方案：含硅和金属的材料是部分制造的集成电路的暴露部分，并且可以形成例如晶体管的一部分。 硅和含金属的材料在含有氧化剂和还原剂的气氛中被氧化。 在一些实施方案中，还原剂以约10vol％或更低的浓度存在。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP4452028B2
公开(公告)日：2010-04-21
申请号：JP2003071685
申请日：2003-03-17
Inventor： ロベルト ランドスメール ティモシー , ゲラルダス マリア オースターラケン テオドルス , タルホースト ハーバート , ヒューセン フランク
IPC: F27D3/12 , H01L21/22 , H01L21/00 , H01L21/683
CPC classification number: H01L21/67103
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83.发明专利Semiconductor processing apparatus having improved thermal characteristic and method of providing the processing apparatus 审中-公开具有改进的热特性的半导体处理装置和提供加工装置的方法
公开(公告)号：JP2009302547A
公开(公告)日：2009-12-24
申请号：JP2009158225
申请日：2009-06-12
Inventor： DE RIDDER CHRISTIANUS GERARDUS
IPC: H01L21/02 , C23C16/44 , H01L21/205 , H01L21/22 , H01L21/31
CPC classification number: C09D5/004 , C09D1/00 , H01L21/67109
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor processing apparatus having an improved thermal characteristic, and a method of providing the processing apparatus.
SOLUTION: The semiconductor processing apparatus includes a process chamber containing a heated gaseous atmosphere. The apparatus includes many mechanical components, at least one of which is at least partially coated with heating/reflecting amorphous SiO
2 particles. The method of processing constituent elements of the semiconductor processing apparatus includes steps of: at least partially coating the surface of the constituent element with the amorphous SiO
2 particles; and sealing the coated surface of the constituent element.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 要解决的问题：提供具有改进的热特性的半导体处理装置以及提供处理装置的方法。 解决方案：半导体处理设备包括含有加热的气体气氛的处理室。 该装置包括许多机械部件，其中至少一个至少部分地被加热/反射非晶硅SiO 2颗粒部分地涂覆。 处理半导体处理装置的组成元件的方法包括以下步骤：至少部分地用无定形SiO 2 / SiO 2颗粒涂覆构成元件的表面; 并密封构成元件的涂覆表面。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP4333900B2
公开(公告)日：2009-09-16
申请号：JP2002547231
申请日：2001-11-26
Inventor： ユーハ フーヤネン , イボ ラアイマケルス
IPC: G01R33/09 , H01L43/12 , C23C16/40 , G11B5/39 , H01F10/16 , H01F10/32 , H01F41/22 , H01F41/30 , H01F41/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L29/82 , H01L43/08
CPC classification number: H01F10/3231 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F41/22 , H01F41/307 , H01L43/12
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公开(公告)号：JP4251814B2
公开(公告)日：2009-04-08
申请号：JP2002070772
申请日：2002-03-14
Inventor： コルネリス ヨンケルス，オットー
IPC: H01L21/67 , G01N7/02 , H01L21/00 , H01L21/205
CPC classification number: H01L21/67253 , G01N7/02
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Patent Agency Ranking86.发明专利
公开(公告)号：JP2009071303A
公开(公告)日：2009-04-02
申请号：JP2008223284
申请日：2008-09-01
Inventor： KUZNETSOV VLADIMIR
IPC: H01L21/205 , C23C16/452 , C23C16/453 , C23C16/455
CPC classification number: C30B23/005 , C23C16/045 , C23C16/4404 , C23C16/45565 , C30B35/002 , H01L21/67103 , H01L21/67109 , Y10T29/41
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor processing components having apertures with deposited coatings, and to provide a method for forming the same. SOLUTION: Holes 210 in semiconductor processing reactor components 200 are sized to facilitate deposition of protective coatings, such chemical vapor deposition at atmospheric pressure. In some embodiments, the holes 210 each have a flow constriction 212 that narrows the holes 210 in one part and that also divides the holes into one or more other parts. In some embodiments, the aspect ratios of the one or more other parts are about 15:1 or less, or about 7:1 or less, and have a cylindrical or conical cross-sectional shape. The holes 210 are coated with a protective coating, such as a silicon carbide coating, by chemical vapor deposition, including chemical vapor deposition at atmospheric pressure. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题：提供具有沉积涂层的孔的半导体加工部件，并提供其形成方法。 解决方案：半导体处理反应器部件200中的孔210的尺寸设计成便于在大气压下沉积保护涂层，这种化学气相沉积。 在一些实施例中，孔210各自具有流动收缩部212，其缩小了一部分中的孔210，并且还将孔分成一个或多个其它部分。 在一些实施方案中，一个或多个其它部分的纵横比为约15:1或更小，或约7:1或更小，并且具有圆柱形或圆锥形横截面形状。 孔210通过化学气相沉积（包括大气压下的化学气相沉积）涂覆保护涂层，例如碳化硅涂层。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP2009004786A
公开(公告)日：2009-01-08
申请号：JP2008162014
申请日：2008-06-20
Inventor： HENDRIKS MENSO , KNAPP MARTIN DR , HAUKKA SUVI P
IPC: H01L21/316 , C23C16/44 , H01L21/318
CPC classification number: C23C16/308 , C23C16/18 , C23C16/30 , C23C16/34 , C23C16/401 , C23C16/405 , C23C16/45523
Abstract: PROBLEM TO BE SOLVED: To provide a method in which advantages of an ALD mode and a CVD mode are combined with each other.
SOLUTION: Atomic layer deposition (ALD) is used to deposit one layer and pulsed chemical vapor deposition (CVD) is used to deposit another layer. During the ALD part, sequential and alternating pulses of reactants are flowed. During the pulsed CVD part, two CVD reactants are flowed, with at least a first of the CVD reactants flowed in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. In the present invention, e.g., nanolaminate films can be formed. Preferably, high quality layers are formed by flowing the second CVD reactant into a reaction chamber for a longer total duration than the first CVD reactant. In some embodiments, the pulses of the third reactant at separated by a duration at least about 1.75 times the length of the pulse. Preferably, less than about 8 monolayers of material are deposited per pulse of the first CVD reactant.
COPYRIGHT: (C)2009,JPO&INPITAbstract translation: 要解决的问题：提供一种将ALD模式和CVD模式的优点彼此组合的方法。
解决方案：使用原子层沉积（ALD）沉积一层，并使用脉冲化学气相沉积（CVD）沉积另一层。 在ALD部分期间，反应物的顺序和交替脉冲流动。 在脉冲CVD部分期间，流过两个CVD反应物，其中至少第一个CVD反应物以脉冲流动，这些脉冲至少部分地与第二个CVD反应物的流动重叠。 在本发明中，例如可以形成Nanolaminate膜。 优选地，通过使第二CVD反应物流入反应室中比第一CVD反应物更长的总持续时间形成高质量的层。 在一些实施方案中，第三反应物的脉冲以脉冲长度的至少约1.75倍的持续时间隔开。 优选地，每个脉冲的第一CVD反应物沉积少于约8个单层的材料。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP4099664B2
公开(公告)日：2008-06-11
申请号：JP2003275882
申请日：2003-07-17
Inventor： ゲラルドス マリア オーステルラケン テオドルス
IPC: H01L21/22 , H01L21/683 , C30B25/12 , C30B31/14 , H01L21/00 , H01L21/205 , H01L21/324 , H01L21/673
CPC classification number: H01L21/67309 , C30B25/12 , C30B31/14 , H01L21/67109 , H01L21/67346
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公开(公告)号：JP2007142415A
公开(公告)日：2007-06-07
申请号：JP2006308013
申请日：2006-11-14
Inventor： RAHTU ANTTI H
IPC: H01L21/316 , C23C16/40 , H01L21/312
CPC classification number: C23C16/405 , C23C16/45534 , H01L21/28194 , H01L21/3141 , H01L21/31645
Abstract: PROBLEM TO BE SOLVED: To prevent the bonding of a gas-phase reactant having unsaturated coordination to the other same molecule or sticking the gas-phase reactant to a reactor wall.
SOLUTION: The present invention provides a method adapted to improve the deposition of a film on a substrate in a reaction chamber through a gas-phase deposition process (two or more reactants are supplied to the reaction chamber), wherein the method includes supplying a volatile neutral coordinating ligand to the reaction chamber (wherein the ligand can coordinate with at least one selected from (i) one of the reactants and (ii) a reaction by-product formed in the chamber during the film deposition process).
COPYRIGHT: (C)2007,JPO&INPITAbstract translation: 要解决的问题：为了防止具有不饱和配位的气相反应物与另一相同分子的结合或将气相反应物粘附到反应器壁上。 解决方案：本发明提供了一种适于通过气相沉积方法（两种或更多种反应物被供应到反应室）来改善膜在反应室中的基板上的沉积的方法，其中该方法包括 向反应室供应挥发性中性配位配体（其中配体可与至少一种选自（i）反应物之一和（ii）在膜沉积过程中在室中形成的副产物配位）。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2005203743A
公开(公告)日：2005-07-28
申请号：JP2004330576
申请日：2004-11-15
Inventor： KESTEREN TOM A V , ZINGER JAN
IPC: H01L21/324 , F27B5/14 , F27B17/00 , F27D5/00 , F27D19/00 , F27D21/00 , H01L21/00 , H01L21/26 , H01L21/677
CPC classification number: H01L21/67109 , F27B17/0025 , F27D19/00 , F27D21/0014 , G05D23/1931 , H01L21/67784
Abstract: PROBLEM TO BE SOLVED: To provide a heat treatment apparatus which can control not only the temperature of a furnace body and the temperatures of a heating zone but also the thermal recovery rate of the furnace body after a substrate is placed in the vicinity of the furnace body. SOLUTION: Heat treatment is performed while making a substrate float between two heated surfaces of a reactor by flowing gas. The two heated surfaces have multiple heating zones, respectively. The heating rate of each heating zone is independently controlled by two nested control loops in a cascade temperature control configuration, permitting compensation for differences in the heating rates of the heating zones, thus allowing a uniform temperature or a predetermined temperature gradient to be established across all the heating zones. The intensity of transitional heating is recalculated after the introduction of each substrate by using the heating behavior of the previous transitional heating as an input in order to more accurately heat the heating zones to a desired temperature. As the intensity of transitional heating can be changed from one substrate to the other, the throughput of the heat treatment apparatus can also be changed. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种热处理装置，其不仅可以控制炉体的温度和加热区的温度，还可以控制在将基板放置在附近之后的炉体的热回收率 的炉体。 解决方案：通过流动气体使衬底浮在反应器的两个加热表面之间进行热处理。 两个加热表面分别具有多个加热区。 每个加热区的加热速率由级联温度控制结构中的两个嵌套控制回路独立控制，允许对加热区的加热速率的差异进行补偿，从而允许在所有加热区中建立均匀的温度或预定的温度梯度 加热区。 通过使用先前的过渡加热的加热行为作为输入，在引入每个基板之后重新计算过渡加热的强度，以便更准确地将加热区加热到期望的温度。 随着过渡加热的强度可以从一个基底改变到另一个基底，热处理装置的生产量也可以改变。 版权所有（C）2005，JPO＆NCIPI
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