Abstract:
Techniques are disclosed for optimization of RF converters. The techniques can be employed, for instance, in RF converters implemented in semiconductor materials (system- on-chip, or chip set) or with discrete components on a printed circuit board, In any such cases, the RF converter system can be configured with one or more actuators to adjust performance, one or more sensor to assess the performance (e.g., linearity of RF converter) and parameters of interest (e.g., ambient temperature, and a control block for controlling the sensors and actuators. The configuration allows the RF converter to autonomously self-optimize for linearity or other parameters of interest such as gain, noise figure, and dynamic range, across a broad range of variables.
Abstract:
In the structure for providing protection for the human body from ballistic projectiles which includes one or more ballistic resistant panels overlying at least a portion of the body, wherein the improvement comprising one or more electronic devices integrated into at least one of the ballistic resistant panels.
Abstract:
A desired signal modulated with H symbols is detected in the presence of a constant modulus (CM) interferes that produces M symbols. Observation samples corresponding to the desired signal and the interferer are obtained from a signal recovery stage, N observation constellations are defined, each having M constellation points corresponding to the symbols produced by the interferer, and the points form a circular perimeter of the constellation with a radius corresponding to the strength of the interferer. The perimeter of each constellation is centered on one of H defined symbol points representing the different possible symbols of the desired signal. Distances between the observation samples anό the circular perimeter of each observation constellation are determined. For each observation sample, the symbol point on which the constellation perimeter closest to the sample is centered, is selected as a symbol of the desired signal.
Abstract:
A system is provided for detecting the passage of vehicles and the classification thereof by weight using geophone outputs and a unique density measurement in which the number of peaks of the geophone signal above a predetermined threshold over a number of time frames indicates the presence of a vehicle, with the number of time frames in which the density exceeds the threshold indicating whether the vehicle is a heavy vehicle such as a tank, or a light vehicle such as a car, with the threshold eliminating both manmade and natural noise, as well as distinguishing seismic vibrations due to personnel and animals. In one embodiment, various thresholds are utilized to detect the onset of vehicle presence and the end of the event.
Abstract:
A method for semiconductor device fabrication includes thinning a region of a semiconductor wafer upon which the device is to be formed, subsequently forming on the thick region one or more photonic and/or partially depleted electronic devices, and forming on the thin region one or more fully depleted electronic devices An isolation area may be formed between the thin region and the thick region.
Abstract:
A dispensing and accountability system for assuring washing of a person's hands includes at least one passive infrared detector adapted to detect the presence of the person having a requirement of washing the hands. Further, the dispensing and accountability system includes a controller operatively coupled to each passive infrared detector of the at least one passive infrared detector. Furthermore, the dispensing and accountability system includes at least one audio signal unit operatively coupled to the controller. The at least one audio signal unit is adapted to generate an audio signal to remind the person Io wash the hands. In addition, the dispensing and accountability system includes at least one dispensing unit operatively coupled to the controller. Further disclosed is a method for assuring washing of the person's hands using the dispensing and accountability system.
Abstract:
A read reference circuit for a sense amplifier within a chalcogenide memory device is disclosed. The read reference circuit provides a reference voltage level to the sense amplifier for distinguishing between a logical "0" state and a logical "1" state within a chalcogenide memory cell. In conjunction with a precharge circuit, the read reference circuit generates a selectable read reference current to the sense amplifier in order to detect the logical state of the chalcogenide memory cell. The precharge circuit precharges the bitlines of the chalcogenide memory cell before the sense amplifier detects the logical state of the chalcogenide memory cell.
Abstract:
A read reference circuit for a sense amplifier within a chalcogenide memory device is disclosed. The read reference circuit provides a reference voltage level to the sense amplifier for distinguishing between a logical "0" state and a logical "1" state within a chalcogenide memory cell. In conjunction with a precharge circuit, the read reference circuit generates a selectable read reference current to the sense amplifier in order to detect the logical state of the chalcogenide memory cell. The precharge circuit precharges the bitlines of the chalcogenide memory cell before the sense amplifier detects the logical state of the chalcogenide memory cell.
Abstract:
A method for fabricating butt-coupled electro-absorptive modulators is disclosed. A butt-coupled electro-absorptive modulator with minimal dislocations in the electro-absorptive material is produced by adding a dielectric spacer for lining the coupling region before epitaxially growing the SiGe or other electro-absorptive material. It has been determined that during the SiGe growth, the current process has exposed single crystal silicon at the bottom of the hole and exposed amorphous silicon on the sides. SiGe growth on the amorphous silicon is expected to have more dislocations than single crystal silicon. There should also be dislocations or fissures where the SiGe growth from the each nucleation source finally join. Thus, a dielectric sidewall can protect an exposed waveguide face from any etching from an aggressive surface preparation prior to epi growth.