公开(公告)号：JP2007300133A

公开(公告)日：2007-11-15

申请号：JP2007175528

申请日：2007-07-03

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： O KO ,  YONEDA MASAHIRO

IPC: H01L31/107

CPC classification number: H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49111 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light receiving device for suppressing leak currents even when it is mounted on a module.
SOLUTION: A PIN type photo-diode 10 is provided with: a semiconductor substrate 31; first conductive type first semiconductor layers 34 and 35 formed on the semiconductor substrate 31; a light absorbing layer 36 formed on the first semiconductor layer for generating a carrier according to incident rays of light; second conductive type second semiconductor layers 37, 38, 39 and 40 formed on the light absorbing layer 36; a first electrode part 41 for applying a first potential to the first semiconductor layer; a second electrode part 42 for applying a second potential to the second semiconductor layer; and at least one second conductive type third semiconductor layer 33 interposed between the first main surface of the substrate and the first semiconductor layer.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种半导体光接收装置，用于即使将其安装在模块上也可以抑制泄漏电流。 PIN型光电二极管10设置有：半导体衬底31; 形成在半导体基板31上的第一导电型第一半导体层34和35; 形成在第一半导体层上的光吸收层36，用于根据入射的光线产生载体; 形成在光吸收层36上的第二导电类型的第二半导体层37,38,39和40; 用于向第一半导体层施加第一电位的第一电极部分41; 用于向第二半导体层施加第二电位的第二电极部分42; 以及介于基板的第一主表面和第一半导体层之间的至少一个第二导电类型的第三半导体层33。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007295531A

公开(公告)日：2007-11-08

申请号：JP2007044467

申请日：2007-02-23

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： HARA HIROSHI

IPC: H03G3/30 ,  H03F1/30 ,  H03F3/08

CPC classification number: H03G3/3084

Abstract: PROBLEM TO BE SOLVED: To provide an electronic circuit which can prevent an output of an amplifier from being inadequately reflected to the control of gain of the amplifier.
SOLUTION: An electronic circuit includes an input terminal Tin, a transimpedance amplifier 10 connected to the input terminal Tin and including an amplifier 11 and a feedback resistor R3, a time constant circuit 32 smoothing an output of the transimpedance amplifier 10, a gain control circuit 40 arranged between the input terminal Tin and ground potential and controlling a current Id flowing between the input terminal Tin and the ground potential on the basis of the output from the time constant circuit 32, and a safeguard circuit 50 controlling the gain control circuit 40 and blocking the current Id flowing between the input terminal Tin and the ground potential when a signal inputted to the input terminal Tin is stopped.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种电子电路，其可以防止放大器的输出反映不足以控制放大器的增益。 电子电路包括：输入端子Tin，连接到输入端子Tin的跨阻放大器10，包括放大器11和反馈电阻器R3，时间常数电路32平滑跨阻放大器10的输出; 增益控制电路40，其布置在输入端子Tin和接地电位之间，并且基于来自时间常数电路32的输出来控制在输入端子Tin和接地电位之间流动的电流Id;以及保护电路50，其控制增益控制 并且当输入到输入端子Tin的信号停止时，阻断在输入端子Tin与接地电位之间流动的电流Id。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007273644A

公开(公告)日：2007-10-18

申请号：JP2006096075

申请日：2006-03-30

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： ISHIKAWA TSUTOMU

IPC: H01S5/026 ,  H01S5/187

CPC classification number: H01S5/0612 ,  H01S5/02453 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S2301/173

Abstract: PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of efficiently heating an optical waveguide using heat generated in a heater, and to provide a laser chip and a laser module.
SOLUTION: The optical semiconductor device (100) includes a semiconductor substrate (101), an optical semiconductor region (102) provided on the semiconductor substrate and having a width smaller than the width of the semiconductor substrate, and a heater (103) provided on the optical semiconductor region. The optical semiconductor region includes a clad region (104), an optical waveguide layer (105) provided in the clad region and having a refractive index larger than the refractive index of the clad region, and a low thermal conductivity layer (106) provided between the optical waveguide layer and the semiconductor substrate and having a thermal conductivity smaller than the thermal conductivity of the clad layer.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决的问题：提供能够使用在加热器中产生的热量有效地加热光波导的光半导体装置，并提供激光芯片和激光模块。 解决方案：光半导体器件（100）包括半导体衬底（101），设置在半导体衬底上并且具有小于半导体衬底的宽度的宽度的光学半导体区域（102）和加热器（103 ）设置在光学半导体区域上。 所述光学半导体区域包括包层区（104），设置在所述包层区中并具有大于所述包层区的折射率的折射率的光波导层（105）和设置在所述包层区之间的低导热层（106） 所述光波导层和所述半导体基板的热导率小于所述包覆层的导热率。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007250799A

公开(公告)日：2007-09-27

申请号：JP2006071737

申请日：2006-03-15

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： KAJIYAMA SATOSHI ,  SUMITOMO HIROYUKI

IPC: H01S5/00

CPC classification number: H01L22/20 ,  H01L22/14 ,  H01S5/0014 ,  H01S5/0021 ,  H01S5/0201 ,  H01S5/22

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor laser of which a semiconductor laser that degrades due to energization of element current is decreased to decrease a manufacturing cost.
SOLUTION: The manufacturing method of a semiconductor laser which is formed from a compound semiconductor layer in which a ridge contains Ga, includes a process (step 12) wherein the semiconductor laser is energized with element current until the characteristics of the semiconductor laser is restored after it is degraded by energization of the element current.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种半导体激光器的制造方法，其中由于元件电流的通电而劣化的半导体激光器降低，从而降低制造成本。 解决方案：由其中脊包含Ga的化合物半导体层形成的半导体激光器的制造方法包括其中半导体激光器被元件电流激励的工艺（步骤12），直到半导体激光器的特性 在通过元件电流通电而退化后恢复。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007180425A

公开(公告)日：2007-07-12

申请号：JP2005379661

申请日：2005-12-28

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： YAMABI RYUJI ,  YANO HIROSHI

IPC: H01L21/822 ,  H01L27/04 ,  H01L27/146 ,  H01L31/107

CPC classification number: H01L27/0605 ,  H01L31/105 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device where a capacity of a capacitor is increased without enlargement. SOLUTION: The semiconductor device is provided with electrode pads 51 to 54, a capacitor 60, and a substrate 10 where the electrode pads 51 to 54 and the capacitor 60 are arranged in a predetermined region. The capacitor 60 and the electrode pads 51 to 54 have an arrangement relation on a plane where two or more sides of each of the capacitor 60 and the electrode pads 51 to 54 are adjacent to each other at predetermined intervals. The capacitor 60 is further provided with a connection side opposing the electrode pads 51 to 54 by connecting the two sides of the capacitor 60. The angle of the outside of the capacitor formed by the connection side, and each of the two sides is larger than 90°. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种电容器的容量增大而不扩大的半导体器件。 解决方案：半导体器件设置有电极焊盘51至54，电容器60和衬底10，其中电极焊盘51至54和电容器60布置在预定区域中。 电容器60和电极焊盘51〜54在电容器60和电极焊盘51〜54的两侧或两侧的多个侧面以规定的间隔彼此相邻的平面上具有排列关系。 电容器60还通过连接电容器60的两侧而设置有与电极焊盘51至54相对的连接侧。由连接侧形成的电容器的外部角度以及两侧中的每一侧的角度大于 90°。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007165739A

公开(公告)日：2007-06-28

申请号：JP2005362649

申请日：2005-12-16

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： NUNOKAWA MITSUJI

IPC: H01L23/12 ,  H01L23/02

CPC classification number: H01L23/552 ,  H01L23/04 ,  H01L23/10 ,  H01L23/20 ,  H01L23/66 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/1146 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/94 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1423 ,  H01L2924/16152 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/11 ,  H01L2224/03

Abstract: PROBLEM TO BE SOLVED: To suppress high frequency waves generated from a circuit from being reflected on the back surface of a substrate, in a high frequency semiconductor device and an electronic device mounted face down. SOLUTION: The semiconductor device comprises a substrate (10) provided with the circuit (14), a conductive film (12) provided on a surface opposite to the surface provided with the circuit (14) of the substrate (10) and a face down mounting part (16) provided on the surface provided with the circuit (14) of the substrate (10), and the film thickness of the conductive film (12) is such that the sheet resistance of the conductive film (12) becomes 1/4 to 4 times of the resistance components of the impedance of the substrate (10). Also, the semiconductor device is mounted on a substrate loading part (20) for the electronic device. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了抑制从电路产生的高频波在基板的背面反射，在高频半导体器件和面向下安装的电子器件中。 解决方案：半导体器件包括设置有电路（14）的衬底（10），设置在与设置有衬底（10）的电路（14）的表面相对的表面上的导电膜（12），以及 设置在设置有基板（10）的电路（14）的表面上的面朝下安装部（16），并且导电膜（12）的膜厚度使得导电膜（12）的薄层电阻 成为基板（10）的阻抗的电阻分量的1/4至4倍。 此外，半导体器件安装在用于电子器件的衬底装载部分（20）上。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007165430A

公开(公告)日：2007-06-28

申请号：JP2005357228

申请日：2005-12-12

Applicant: Eudyna Devices Inc ,  Fujitsu Ltd ,  ユーディナデバイス株式会社 ,  富士通株式会社

Inventor： SHIMURA TOSHIHIRO ,  OHASHI YOJI ,  NUNOKAWA MITSUJI

IPC: H01L23/00

CPC classification number: H01L23/66 ,  H01L23/055 ,  H01L23/06 ,  H01L23/552 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73253 ,  H01L2924/16152 ,  H01L2924/1616 ,  H01L2924/1617 ,  H01L2924/3011

Abstract: PROBLEM TO BE SOLVED: To provide a circuit module for high frequency in which isolation is enhanced for extraneous emission waves leaked from a semiconductor circuit chip. SOLUTION: A resistor film 7 is formed on the side opposite to a dielectric substrate 1 of a semiconductor circuit chip 6 mounted on the dielectric substrate 1 through ground metal layers 2 and 4. Distance from the ground metal layer to the resistor film is equal to a quarter of wavelength at a predetermined frequency, and the resistor film 7 has a sheet resistance equal to the characteristic impedance of air. A separate dielectric substrate on which a metal layer is formed may be mounted on the side opposite to the resistor film 7. When the resistor film 7 is bonded to the separate dielectric substrate, it has a sheet resistance equal to a characteristic impedance dependent on the permeability of material of the semiconductor circuit chip. When the resistor film 7 is formed while spaced apart from the semiconductor circuit chip, it has a sheet resistance equal to the characteristic impedance of air and the thickness of the separate dielectric substrate is equal to a quarter of wavelength at a predetermined frequency. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于高频的电路模块，其中从半导体电路芯片泄漏的外部发射波增强了隔离。 解决方案：通过接地金属层2和4，在安装在电介质基板1上的半导体电路芯片6的电介质基板1的相反侧形成电阻膜7.距离接地金属层到电阻膜 等于预定频率的四分之一波长，并且电阻膜7具有等于空气的特性阻抗的薄层电阻。 其上形成有金属层的单独的电介质基板可以安装在与电阻膜7相对的一侧上。当电阻膜7接合到单独的电介质基板时，其具有等于取决于电阻膜7的特性阻抗的薄层电阻 半导体电路芯片材料的导磁率。 当电阻膜7形成为与半导体电路芯片间隔开时，其具有等于空气的特性阻抗的薄层电阻，并且分离的电介质基板的厚度等于预定频率的波长的四分之一。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007048988A

公开(公告)日：2007-02-22

申请号：JP2005232697

申请日：2005-08-11

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： FUJII TAKUYA

IPC: H01S5/14 ,  H01S5/12

CPC classification number: H01S5/12 ,  H01S5/0265 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/1057 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/1209 ,  H01S5/1212 ,  H01S5/1221 ,  H01S5/1231 ,  H01S5/124 ,  H01S5/1246 ,  H01S5/125

Abstract: PROBLEM TO BE SOLVED: To provide a tunable semiconductor laser capable of stabilizing a mode of a laser oscillation with a newly structured SG-DR waveguide.
SOLUTION: The semiconductor laser (200) comprises a first region having a diffraction grating (2), and a first diffraction grating region (3) having a plurality of segments having a second region connected to the first region and becoming a space part. At least two optical lengths out of the plurality of second regions are different each other and refraction factors of each segment are respectively variable. The difference of at least two optical lengths out of the plurality of second regions makes a peak reflection intensity of a longitudinal mode in the first diffraction grating region have a wavelength dependence. This can provide a stable laser oscillation in the wavelength range with the peak reflection insensity of the longitudinal mode in the first diffraction grating region relatively large.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够利用新结构化的SG-DR波导来稳定激光振荡模式的可调谐半导体激光器。 解决方案：半导体激光器（200）包括具有衍射光栅（2）的第一区域和具有多个段的第一衍射光栅区域（3），第二区域具有连接到第一区域的第二区域并变成空间 部分。 多个第二区域中的至少两个光学长度彼此不同，并且每个段的折射系数分别是可变的。 多个第二区域中的至少两个光学长度的差异使得第一衍射光栅区域中的纵向模式的峰值反射强度具有波长依赖性。 这可以在波长范围内提供稳定的激光振荡，其中第一衍射光栅区域中的纵向模式的峰值反射密度相对较大。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007019561A

公开(公告)日：2007-01-25

申请号：JP2006291848

申请日：2006-10-26

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： SUZUKI SHINYA ,  KAWAMURA HIROMITSU

IPC: H01S5/026

Abstract: PROBLEM TO BE SOLVED: To drive a optical semiconductor device having a photo semiconductor element into which a semiconductor laser diode and an optical modulator are integrated by a single power supply. SOLUTION: The optical semiconductor device has the optical semiconductor element into which the semiconductor laser diode (LD) and the light modulator (MOD) are integrated so that a pn junction points in the same direction. The common terminal of the semiconductor laser diode and the light modulator is set to a reference potential (Vcm) different from a grounded potential, a first potential which is the same polarity as the reference potential is applied to other terminal of the semiconductor laser diode, a circuit for applying a second potential which is the same polarity as the grounded potential or the reference potential and becomes a standard basis of a modulation signal is provided to the other terminal of the light modulator, and the semiconductor laser diode and the light modulator are driven in the reverse direction using the reference potential as a standard basis. Then, the reference potential is provided to be adjustable. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：通过单个电源驱动具有半导体激光二极管和光调制器的光半导体元件的光半导体器件。 解决方案：光半导体器件具有半导体激光二极管（LD）和光调制器（MOD）被集成到其中的光半导体元件，使得pn结指向相同的方向。 将半导体激光二极管和光调制器的公共端子设置为与接地电位不同的参考电位（Vcm），将与参考电位相同极性的第一电位施加到半导体激光二极管的另一端， 提供与光接收电位或参考电位相同极性并成为调制信号的标准基准的第二电位的电路，并且半导体激光二极管和光调制器是 使用参考电位作为标准依据在相反方向上驱动。 然后，提供参考电位是可调节的。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006286910A

公开(公告)日：2006-10-19

申请号：JP2005104512

申请日：2005-03-31

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： KAWASAKI TAKESHI ,  NAKADA TAKESHI ,  YAEGASHI SEIJI

IPC: H01L29/80 ,  H01L29/12 ,  H01L29/739 ,  H01L29/78

CPC classification number: H01L29/267 ,  H01L29/0646 ,  H01L29/1029 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7397 ,  H01L29/7783 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/802

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device having a high breakdown voltage and low on-resistance, and a manufacturing method thereof. SOLUTION: The semiconductor device and the manufacturing method thereof which is provided with a substrate (10), a SiC drift layer (14) formed on the substrate, a GaN system semiconductor layer (18), a source electrode (60) or an emitter electrode/gate electrode (62) formed on the GaN system semiconductor layer, a drain electrode (64) or collector electrode connected to a surface opposing the GaN system semiconductor layer of the SiC drift layer. Having the SiC drift layer enable to increase in film thickness of the drift layer, the drain breakdown voltage can be increased. Further, the use of the GaN system semiconductor layer having high channel mobility as a channel layer can provide the semiconductor layer having low on-resistance and a manufacturing method thereof. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供具有高击穿电压和低导通电阻的半导体器件及其制造方法。 解决方案：设置有形成在基板上的基板（10），SiC漂移层（14）的半导体器件及其制造方法，GaN系半导体层（18），源电极（60） 或形成在GaN系半导体层上的发射电极/栅电极（62），连接到与SiC漂移层的GaN系半导体层相对的表面的漏电极（64）或集电极。 使SiC漂移层能够增加漂移层的膜厚度，可以提高漏极击穿电压。 此外，使用具有高沟道迁移率的GaN系半导体层作为沟道层可以提供具有低导通电阻的半导体层及其制造方法。 版权所有（C）2007，JPO＆INPIT