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公开(公告)号：US20140319656A1
公开(公告)日：2014-10-30
申请号：US14262529
申请日：2014-04-25
Applicant: Skorpios Technologies, Inc.
Inventor： Elton Marchena , John Y. Spann , Timothy Creazzo , Stephen B. Krasulick , Amit Mizrahi
IPC: H01L23/00
CPC classification number: H01L24/83 , G02B6/423 , G02B6/4238 , H01L23/13 , H01L24/29 , H01L24/32 , H01L2224/29036 , H01L2224/29109 , H01L2224/8114 , H01L2224/8314 , H01L2224/83193 , H01L2224/83345 , H01L2924/12042 , H01L2924/01046 , H01L2924/00
Abstract: A method of fabricating a composite semiconductor structure is provided. Pedestals are formed in a recess of a first substrate. A second substrate is then placed within the recess in contact with the pedestals. The pedestals have a predetermined height so that a device layer within the second substrate aligns with a waveguide of the first substrate, where the waveguide extends from an inner wall of the recess.
Abstract translation: 提供一种制造复合半导体结构的方法。 基座形成在第一基板的凹部中。 然后将第二基板放置在与基座接触的凹部内。 基座具有预定的高度，使得第二基板内的装置层与第一基板的波导对准，其中波导从凹部的内壁延伸。
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82.发明公开公开(公告)号：US20240275123A1
公开(公告)日：2024-08-15
申请号：US18405337
申请日：2024-01-05
Applicant: Skorpios Technologies, Inc.
Inventor： Murtaza Askari , Stephen B. Krasulick , Majid Sodagar , John Zyskind
CPC classification number: H01S5/022 , G02B6/13 , H01S5/0202 , H01S5/028
Abstract: A semiconductor laser device is provided. The semiconductor laser device includes: a substrate having a first facet; a guiding layer having a second facet through which an output light is configured to be emitted; a bottom dielectric layer between the substrate and the guiding layer, and a top dielectric layer on the guiding layer. The second facet is at an angle relative to the first facet.
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公开(公告)号：US11624872B2
公开(公告)日：2023-04-11
申请号：US17539474
申请日：2021-12-01
Applicant: Skorpios Technologies, Inc.
Inventor： Paveen Apiratikul , Damien Lambert
Abstract: An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.
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公开(公告)号：US11409039B2
公开(公告)日：2022-08-09
申请号：US16985860
申请日：2020-08-05
Applicant: Skorpios Technologies, Inc.
Inventor： Guoliang Li , Damien Lambert , Nikhil Kumar
Abstract: A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder and a ridge. In some embodiments, the ridge of the waveguide mode expander has a plurality of stages, the plurality of stages having different widths at a given cross section.
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公开(公告)号：US20220171125A1
公开(公告)日：2022-06-02
申请号：US17520467
申请日：2021-11-05
Applicant: Skorpios Technologies, Inc.
Inventor： Stephen B. Krasulick , John Dallesasse , Amit Mizrahi , Timothy Creazzo , Elton Marchena , John Y. Spann
IPC: G02B6/12 , H01S5/02326
Abstract: A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening, such that the active region of the chip is aligned with the device layer of the platform.
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Patent Agency Ranking
公开(公告)号：US11217963B1
公开(公告)日：2022-01-04
申请号：US16698853
申请日：2019-11-27
Applicant: Skorpios Technologies, Inc.
Inventor： Murtaza Askari , Stephen B. Krasulick
Abstract: A photonic die includes an optical component that can emit output light. The optical component includes a substrate having a length and width that are substantially greater than a thickness thereof, the thickness defining a vertical direction. The optical component includes a vertical edge, and a reflective or antireflective coating on the vertical edge, wherein the reflective or antireflective coating includes a silicon-based material.
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公开(公告)号：US20210405294A1
公开(公告)日：2021-12-30
申请号：US17314991
申请日：2021-05-07
Applicant: Skorpios Technologies, Inc.
Inventor： Majid Sodagar , Wenyi Wang , Changyi Li , Guoliang Li , Murtaza Askari , Yi Wang , John Dallesasse , Stephen B. Krasulick
Abstract: A polarization-independent, optical circulator is formed in silicon photonics. The polarization-independent, optical circulator uses an optical splitter having two couplers and two waveguides joining the two couplers. One of the two waveguides is thinner than the other to create a large effective index difference between TE and TM modes transmitted through the one waveguide. Polarization rotators, including reciprocal and/or non-reciprocal rotators, are further used to create the optical circulator.
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公开(公告)号：US11194092B2
公开(公告)日：2021-12-07
申请号：US16690483
申请日：2019-11-21
Applicant: Skorpios Technologies, Inc.
Inventor： Paveen Apiratikul , Damien Lambert
Abstract: An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.
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公开(公告)号：US11002907B2
公开(公告)日：2021-05-11
申请号：US16245615
申请日：2019-01-11
Applicant: Skorpios Technologies, Inc.
Inventor： Damien Lambert
IPC: G02B6/12 , H01S5/02326 , G02B6/122 , G02B6/136 , H01S5/02 , H01S5/026 , H01S5/028 , H01S5/22 , H01S5/30 , H01S5/343 , H01S5/40 , H04B10/50 , H04J14/02
Abstract: A photonic device includes a semiconductor wafer having a waveguide formed therein. An end of the waveguide includes a step. The photonic device further includes a semiconductor chip bonded to the semiconductor wafer and having an active region, and a waveguide coupler disposed in a gap between a sidewall of the semiconductor chip and the end of the waveguide. The waveguide coupler includes an optical bridge that has a first end and a second end opposing the first end. The first end of the optical bridge is interfaced with a facet of the active region of the semiconductor chip. The second end of the optical bridge is interfaced with the end of waveguide, and has a portion thereof disposed over the step at the end of the waveguide.
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公开(公告)号：US20200301069A1
公开(公告)日：2020-09-24
申请号：US16690523
申请日：2019-11-21
Applicant: Skorpios Technologies, Inc.
Inventor： Guoliang Li , Stephen B. Krasulick , Samir Desai
IPC: G02B6/12 , H01S5/022 , G02B6/122 , G02B6/136 , H01S5/02 , H01S5/028 , H01S5/22 , H01S5/343 , H01S5/40 , H01S5/30 , H04B10/50 , H04J14/02
Abstract: A 400 Gb/s transmitter is integrated on a silicon substrate. The transmitter uses four gain chips, sixteen lasers, four modulators to modulate the sixteen lasers at 25 Gb/s, and four multiplexers to produce four optical outputs. Each optical output can transmit at 100 Gb/s to produce a 400 Gb/s transmitter. Other variations are also described.
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