Abstract:
A contact lithography apparatus 100, 220, system 200 and method 300 use a deformation 320 to facilitate pattern transfer 300. The apparatus 100, 220, system 200 and method 300 include a spacer 120, 226 that provides a spaced apart parallel and proximal orientation 310 of lithographic elements, such as a mask 110, 228a, 222 and a substrate 130, 228b, 224, when in mutual contact with the spacer 120, 226. One or more of the mask 110, 228a, 222, the substrate 130, 228b, 224 and the spacer 120, 226 is deformable, such that deformation 320 thereof facilitates the pattern transfer 300.
Abstract:
A pattern tool (200 or 200a) and/or substrate (300 or 300a) including one or more strain control regions (208 or 308) to prevent deformation-related misalignment.
Abstract:
Various embodiments of the present invention are directed to demultiplexers that include tunneling resistor nanowire junctions, and to nanowire addressing methods for reliably addressing nanowire signal lines in nanoscale and mixed-scale demultiplexers. In one embodimentof the present invention, an encoder-demulriplexer comprises a number of input signal lines and an encoder (1304) that generates an n-bit-constant-weight-code code-word internal address (1320, 1506, 1704) for each different input address (1318, 1702) received on the input signal lines. The encoder-demultiplexer also includes n microscale signal lines (1306-1311) on which an n-bit-constant-weight-code code word internal address is out put by the encoder and a number of encoder-demultiplexer-addressed nanowire signal lines interconnected with then microscale signal lines (1306-1311) via tunneling resistor junctions, the encoder-demultiplexer-addressed nanowire signal lines each associated with an n-bit-constant-weight-code code-word internal adress (1320, 1506, 1704).
Abstract:
A quantum well intermixing (QWI) technique for modifying an energy bandgap during the formation of optical semiconductor devices enables spatial control of the QWI process so as to achieve differing bandgap shifts across a wafer, device or substrate surface. The method includes: forming a substrate comprising one or more core layers defining at least one quantum well; depositing a succession of intermixing barrier layers over the quantum well, each successive intermixing barrier layer being formed of a semiconductor material and having a different etch characteristic than an immediately preceding barrier layer; etching away different numbers of the successive barrier layers in different regions of the substrate so as to provide different total thicknesses of barrier layer in different regions of the substrate; and applying an intermixing agent to the surface of the substrate such that the degree of intermixing in the quantum well region varies as a function of the total thickness of barrier layer, thereby forming different bandgaps in the quantum well in each of the respective regions.
Abstract:
A quantum well intermixing (QWI) technique for modifying an energy bandgap during the formation of optical semiconductor devices enables spatial control of the QWI process so as to achieve differing bandgap shifts across a wafer, device or substrate surface. The method includes: patterning the surface of a semiconductor substrate with QW1-initiating material in first regions of the surface; conducting a first thermal processing cycle on the substrate to generate a first bandgap shift in the first regions; patterning the surface of the substrate with QWI-initiating material in second regions of the surface, distinct from said first regions; and conducting a second thermal processing cycle on the substrate to generate a second bandgap shift in the second regions, and to generate a cumulative bandgap shift in the first regions, the cumulative bandgap shift being the cumulative result of said first and second thermal processing cycles. Further steps can produce additional cumulative bandgap shifts.
Abstract:
Cell therapy comprises encapsulating a cell with an integrin or other cell interaction factor, for administration to a mammal. The cells may express a therapeutic transgene or the cells may be regenerative.
Abstract:
Early onset of pulmonary disorders such as pulmonary hypertension are treated or prevented by administration of an apoptosis inhibitor or a survival factor. Early onset of such disorders may be diagnosed by assessing apoptosis in lung tissue.
Abstract:
An apparatus is disclosed for dismantling a pallet comprising an elongated handle having a free end and an attachment end, wherein the attachment end is coupled with a crossbar having a horizontal axis extending perpendicular to the plane of the handle. The apparatus also has one or a plurality of blades extending rigidly forward in adjustable communication with the crossbar via a notched aperture in each blade for receiving the crossbar, wherein each blade further comprises a lower curved portion, and an upper portion for engaging a board of a pallet, at least one wheel rotatably coupled with said lower curved portion, and means for clamping the blades to the crossbar.
Abstract:
An imaging device comprising a linear array of laser diodes that are adapted to provide an optical output comprising a plurality of spaced-apart optical beams. Focusing optics are configured to form a plurality of image points from said spaced-apart optical beams, the image points being spaced apart along a first axis. The image points have a non-uniform spacing along the first axis. By scanning the linear array along a photosensitive plate, and timing the firing of lasers accordingly, every pixel point on the photosensitive plate can be imaged by one of the image points from the laser array. Non-uniform spacing of the image points can provide advantages in heat dissipation from the laser elements, and reduction of some printing artifacts on the photosensitive plate.
Abstract:
An improved integrated optical device (5a-5g) is disclosed containing first and second devices (10a-10g; 15a, 15e), optically coupled to each other and formed in first and second different material systems. One of the first or second devices (10a-10g, 15a, 15e) has a Quantum Well Intermixed (QWI) region (20a, 20g) at or adjacent a coupling region between the first and second devices (10a-10g; 15a, 15e). The first material system may be a III-V semiconductor based on Gallium Arsenide (GaAs) or Indium Phosphide (InP), while the second material may be Silica (SiO2), Silicon (Si), Lithium Niobate (LiNbO3), a polymer, or glass.